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1. 发明授权

US5307309A Memory module having on-chip surge capacitors 失效
标题翻译：具有片上浪涌电容器的内存模块
公开(公告)号：US5307309A
公开(公告)日：1994-04-26
申请号：US34001
申请日：1993-03-19
申请人： Stanley N. Protigal , Web-Foo Chern , Ward D. Parkinson , Leland R. Nevill , Gary M. Johnson , Thomas M. Trent , Kevin G. Duesman
发明人： Stanley N. Protigal , Web-Foo Chern , Ward D. Parkinson , Leland R. Nevill , Gary M. Johnson , Thomas M. Trent , Kevin G. Duesman
IPC分类号： H01L27/02 , H01L27/08 , H05K1/02 , G11C5/06 , G11C5/10 , G11C7/02
CPC分类号： H01L27/0805 , H01L27/0214 , H05K1/0231
摘要： A SIMM (single in-line memory module) board is provided with a plurality of semiconductor memory devices which include, as a part of each memory device, a current spike leveling capacitor. The capacitor is on the die side of circuitry connecting the memory device to the board. By connecting the on-chip capacitors of the memory devices in parallel, sufficient capacitance is provided to stabilize current to all of the memory devices.
摘要翻译： SIMM（单列直插存储器模块）板具有多个半导体存储器件，其包括作为每个存储器件的一部分的电流尖峰稳定电容器。电容器位于将存储器件连接到电路板的电路的管芯侧。通过并联连接存储器件的片上电容器，提供足够的电容以将电流稳定到所有存储器件。

2. 发明授权

US06184568B2 Integrated circuit module having on-chip surge capacitors 失效
标题翻译：具有片上浪涌电容器的集成电路模块
公开(公告)号：US06184568B2
公开(公告)日：2001-02-06
申请号：US08965741
申请日：1997-11-07
申请人： Stanley N. Protigal , Wen-Foo Chern , Ward D. Parkinson , Leland R. Nevill , Gary M. Johnson , Thomas M. Trent , Kevin G. Duesman
发明人： Stanley N. Protigal , Wen-Foo Chern , Ward D. Parkinson , Leland R. Nevill , Gary M. Johnson , Thomas M. Trent , Kevin G. Duesman
IPC分类号： H01L2713
CPC分类号： G06F11/1451 , H01L27/0214 , H01L27/0218 , H01L27/0805 , H05K1/0231
摘要： A SIMM (single in-line memory module) board is provided with a plurality of integrated semiconductor memory or other integrated semiconductor circuit devices which include, as a part of each integrated circuit device, a current spike leveling capacitor. The capacitor is on the die side of circuitry connecting the device to the board. By connecting the on chip capacitors of the integrated circuit devices in parallel, sufficient capacitance is provided to stabilize current to all of the circuit devices.
摘要翻译： SIMM（单列直插式存储器模块）板具有多个集成半导体存储器或其它集成半导体电路器件，其中包括作为每个集成电路器件的一部分的电流尖峰电平电容器。电容器位于将设备连接到电路板的电路的管芯侧。通过并联连接集成电路器件的片上电容器，提供足够的电容以将电流稳定到所有电路器件。

3. 发明授权

US5687109A Integrated circuit module having on-chip surge capacitors 失效
标题翻译：具有片上浪涌电容器的集成电路模块
公开(公告)号：US5687109A
公开(公告)日：1997-11-11
申请号：US671248
申请日：1996-06-27
申请人： Stanley N. Protigal , Wen-Foo Chern , Ward D. Parkinson , Leland R. Nevill , Gary M. Johnson , Thomas M. Trent , Kevin G. Duesman
发明人： Stanley N. Protigal , Wen-Foo Chern , Ward D. Parkinson , Leland R. Nevill , Gary M. Johnson , Thomas M. Trent , Kevin G. Duesman
IPC分类号： G06F11/14 , H01L27/02 , H01L27/08 , H05K1/02 , G11C5/06
CPC分类号： G06F11/1451 , H01L27/0214 , H01L27/0218 , H01L27/0805 , H05K1/0231
摘要： A SIMM (single in-line memory module) board is provided with a plurality of integrated semiconductor memory or other integrated semiconductor circuit devices which include, as a part of each integrated circuit device, a current spike leveling capacitor. The capacitor is on the die side of circuitry connecting the device to the board. By connecting the on-chip capacitors of the integrated circuit devices in parallel, sufficient capacitance is provided to stabilize current to all of the integrated circuit devices.
摘要翻译： SIMM（单列直插式存储器模块）板具有多个集成半导体存储器或其它集成半导体电路器件，其中包括作为每个集成电路器件的一部分的电流尖峰电平电容器。电容器位于将设备连接到电路板的电路的管芯侧。通过并联连接集成电路器件的片上电容器，提供足够的电容以将电流稳定到所有集成电路器件。

4. 发明授权

US5321285A Carrier injection dynamic random access memory having stacked depletion region in Mesa 失效
标题翻译：载体注入动态随机存取存储器在Mesa中具有堆叠的耗尽区域
公开(公告)号：US5321285A
公开(公告)日：1994-06-14
申请号：US925316
申请日：1992-08-10
申请人： Ruojia Lee , Stanley N. Protigal
发明人： Ruojia Lee , Stanley N. Protigal
IPC分类号： G11C11/404 , H01L27/108 , H01L29/68 , G11C11/34
CPC分类号： H01L27/108 , G11C11/404
摘要： A carrier injected dynamic random access memory is defined. A depletion region adjacent to a source/drain region of a transistor is used as a storage cell in a memory array, and logic levels may then be measured by sensing the conductive portion. A low logic level is stored by a reduced formation of the depletion adjacent the conductive portion. These logic levels are sensed and periodically refreshed by conduction through the access device. The logic levels may be read by measuring potential through the access device, or by measuring punch through voltage between the source/drain region and a nearby conductive region. As the level of injected carriers increases, the punch through also increases. A punch through results in a readable increase in current through the access device, thereby providing an indicia of a in logic level.
摘要翻译：定义了载体注入的动态随机存取存储器。将与晶体管的源极/漏极区域相邻的耗尽区域用作存储器阵列中的存储单元，然后可以通过感测导电部分来测量逻辑电平。通过减少邻近导电部分的耗尽的形成来存储低逻辑电平。这些逻辑电平被感测并通过通过接入设备的导通而周期性刷新。逻辑电平可以通过测量通过存取装置的电位，或通过测量源极/漏极区域和附近导电区域之间的穿透电压来读取。随着注射载体的水平增加，冲孔也增加。穿孔导致通过访问设备的电流的可读增加，从而提供逻辑级别的标记。

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