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1. 发明授权

US4949004A Gas discharge lamp having temperature controlled, liquid reservoir for liquified portion of gas 失效
标题翻译：具有温度控制的气体放电灯，用于气化液化部分的液体储存器
公开(公告)号：US4949004A
公开(公告)日：1990-08-14
申请号：US307190
申请日：1989-02-08
申请人： Shunpei Yamazaki , Takashi Inujima , Kazuo Urata , Mamoru Tashiro , Yuji Tanamura , Shinji Imato , Kenji Itoh , Seiichi Odaka , Shigenori Hayashi , Naoki Hirose
发明人： Shunpei Yamazaki , Takashi Inujima , Kazuo Urata , Mamoru Tashiro , Yuji Tanamura , Shinji Imato , Kenji Itoh , Seiichi Odaka , Shigenori Hayashi , Naoki Hirose
IPC分类号： H01J61/52
CPC分类号： H01J61/52
摘要： A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.

2. 发明授权

US4910044A Ultraviolet light emitting device and application thereof 失效
标题翻译：紫外发光装置及其应用
公开(公告)号：US4910044A
公开(公告)日：1990-03-20
申请号：US240364
申请日：1988-09-01
申请人： Shunpei Yamazaki , Kazuo Urata , Mamoru Tashiro , Yuji Tanamura , Shinji Imato , Takashi Inujima , Shigenori Hayashi
发明人： Shunpei Yamazaki , Kazuo Urata , Mamoru Tashiro , Yuji Tanamura , Shinji Imato , Takashi Inujima , Shigenori Hayashi
IPC分类号： B01J19/12 , C23C16/48
CPC分类号： B01J19/123 , C23C16/482
摘要： Ultraviolet light is emitted mainly with 185 nm in wave length so that a thick silicon layer is fabricated by decomposition of silane gas at a high deposition speed. As a light source, a bulb is filled with an amount of mercury gas without dosing argon gas which enhances preferentially light with 254 nm in wave length.
摘要翻译：紫外线主要以波长185nm发射，从而通过以高沉积速度分解硅烷气体来制造厚硅层。作为光源，灯泡充满一定数量的汞气体，而不投入氩气，其优先增强波长为254nm的光。

3. 发明授权

US4987008A Thin film formation method 失效
标题翻译：薄膜形成方法
公开(公告)号：US4987008A
公开(公告)日：1991-01-22
申请号：US357644
申请日：1989-05-24
申请人： Shunpei Yamazaki , Kazuo Urata , Mamoru Tashiro , Yuji Tanamura , Shinji Imato
发明人： Shunpei Yamazaki , Kazuo Urata , Mamoru Tashiro , Yuji Tanamura , Shinji Imato
IPC分类号： G03F7/20 , H01L21/306 , H01L21/318
CPC分类号： H01L21/02046 , G03F7/70925 , H01L21/318 , H01L21/3185 , Y10S438/906
摘要： Film formation without damage on the surface of semiconductor can be established by generating active halogen or active hydrogen by a photochemical reaction, cleaning on the surface of the semiconductor by removing oxide formed thereon by means of the active elements, and continuously thereafter fabricating the film by a photochemical reaction in the same device.
摘要翻译： PCT No.PCT / JP86 / 00328 Sec。 371日期1987年3月2日 102（e）1987年3月2日PCT申请1986年6月27日PCT公布。出版物WO87 / 日本1987年1月15日。通过光化学反应生成活性卤素或活性氢可以形成半导体表面没有损伤的薄膜形成，通过用活性元素除去形成在其上的氧化物，在半导体的表面上进行清洗，然后在同一装置中通过光化学反应连续制造膜。

4. 发明授权

US5147822A Plasma processing method for improving a package of a semiconductor device 失效
标题翻译：一种用于改进半导体器件封装的等离子体处理方法
公开(公告)号：US5147822A
公开(公告)日：1992-09-15
申请号：US667231
申请日：1991-02-25
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31 , H01L23/495
CPC分类号： H01L23/49586 , H01L21/56 , H01L23/29 , H01L23/3135 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L24/45 , H01L24/48 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01029 , H01L2924/01079 , H01L2924/14 , H01L2924/181
摘要： An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制品，其中所述有机树脂的表面设置有硬化的耐水或含碳的电影。

5. 发明授权

US06191492B1 Electronic device including a densified region 失效
标题翻译：包括致密区域的电子设备
公开(公告)号：US06191492B1
公开(公告)日：2001-02-20
申请号：US08161859
申请日：1993-12-06
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L2328
CPC分类号： H01L24/48 , H01L23/3135 , H01L23/49586 , H01L24/45 , H01L2224/05624 , H01L2224/29339 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/8592 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01045 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/00014 , H01L2924/05042 , H01L2924/00 , H01L2924/00012
摘要： An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制件，其中所述有机树脂的表面设置有硬化防水或碳质膜或其中有机树脂表面的孔被填充在惰性气体如氩气中，因为用惰性气体等离子体处理树脂表面，从而防止杂质通过孔进入有机树脂。

6. 发明授权

US06756670B1 Electronic device and its manufacturing method 失效
标题翻译：电子器件及其制造方法
公开(公告)号：US06756670B1
公开(公告)日：2004-06-29
申请号：US09698055
申请日：2000-10-30
申请人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
发明人： Shunpei Yamazaki , Mitsunori Tsuchiya , Kazuo Urata , Itaru Koyama , Shinji Imatou , Shigenori Hayashi , Naoki Hirose , Mari Sasaki , Noriya Ishida , Kouhei Wada
IPC分类号： H01L2306
CPC分类号： H01L23/49586 , H01L21/56 , H01L23/29 , H01L23/3135 , H01L24/45 , H01L24/48 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/8592 , H01L2924/01007 , H01L2924/0101 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/181 , H01L2924/00014 , H01L2924/05442 , H01L2924/05042 , H01L2924/00012
摘要： An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
摘要翻译：一种电子设备，包括具有框架，金属引线和接合结构中的电子部件的基板，以及在所述基板上形成的有机树脂的模制件，其中所述有机树脂的表面设置有硬化防水或碳质膜或其中有机树脂表面的孔被填充在惰性气体如氩气中，因为用惰性气体等离子体处理树脂表面，从而防止杂质通过孔进入有机树脂。

7. 发明授权

US4811684A Photo CVD apparatus, with deposition prevention in light source chamber 失效
标题翻译： Photo CVD装置，在光源室内具有防沉积
公开(公告)号：US4811684A
公开(公告)日：1989-03-14
申请号：US92529
申请日：1987-09-03
申请人： Mamoru Tashiro , Kazuo Urata , Shunpei Yamazaki
发明人： Mamoru Tashiro , Kazuo Urata , Shunpei Yamazaki
IPC分类号： C23C16/48 , C23C14/00 , C23C16/00
CPC分类号： C23C16/482 , Y10S156/916
摘要： A photo CVD apparatus for use with a reactive gas is disclosed, which includes a reaction chamber, a second chamber for a light source, separated from the reaction chamber by a transparent window. There is also a conduit connecting these two chambers and a means for preventing deposition by the reactive gas on the light source chamber walls, such as heating, is provided. Examples of this technique's applicabilities are given with such gases as Si.sub.2 H.sub.6 or Al(CH.sub.3).sub.3 and ammonia.
摘要翻译：公开了一种用于反应气体的光CVD装置，其包括反应室，用于光源的第二室，通过透明窗从反应室分离。还有一个连接这两个腔室的管道，并且提供了用于防止反应气体在光源室壁上的沉积的装置，例如加热。这种技术的适用性的实例由诸如Si 2 H 6或Al（CH 3）3和氨的气体给出。

8. 发明授权

US4857139A Method and apparatus for forming a layer 失效
标题翻译：用于形成层的方法和装置
公开(公告)号：US4857139A
公开(公告)日：1989-08-15
申请号：US140903
申请日：1988-01-04
申请人： Mamoru Tashiro , Kazuo Urata , Shunpei Yamazaki
发明人： Mamoru Tashiro , Kazuo Urata , Shunpei Yamazaki
IPC分类号： C23C16/48
CPC分类号： C23C16/482 , Y10S156/916
摘要： A photo CVD apparatus includes a reaction chamber, a vacuum pump, and a light source chamber disposed in the reaction chamber, the light source chamber having a light window. A light source is provided in the light source chamber for irradiating the inside of the reaction chamber through the window. A device inputs reactive gas into the reaction chamber, and an electrode is disposed in the reaction space adjacent to the window and located between the substrate and the window. A method of depositing a layer on a substrate includes the steps of disposing a substrate in a reaction chamber, introducing a reactive gas, and initiating a photo-chemical reaction to deposit the product of the reaction on the substrate by irradiating the reactive gas with light emitted from a light source through a window of a light source chamber in which the light source is disposed. The substrate is then removed from the reaction chamber, and an etchant gas is introduced into the reaction chamber. A voltage is then applied between the substrate holder and an electrode which is located between the window and the substrate holder for carrying out plasma etching of the window.
摘要翻译：光CVD装置包括反应室，真空泵和设置在反应室中的光源室，光源室具有光窗。光源设置在光源室中，用于通过窗口照射反应室的内部。装置将反应性气体输入到反应室中，并且电极设置在与窗口相邻的反应空间中并且位于基板和窗之间。在衬底上沉积层的方法包括以下步骤：在反应室中设置衬底，引入反应气体，并引发光化学反应，以通过用光照射反应气体将反应产物沉积在衬底上从光源通过其中设置有光源的光源室的窗口发射。然后将基底从反应室中取出，并将蚀刻剂气体引入反应室。然后在衬底保持器和位于窗口和衬底保持器之间的电极之间施加电压以进行窗口的等离子体蚀刻。

9. 发明授权

US4887548A Thin film manufacturing system 失效
标题翻译：薄膜制造系统
公开(公告)号：US4887548A
公开(公告)日：1989-12-19
申请号：US193680
申请日：1988-05-13
申请人： Kazuo Urata , Naoki Hirose , Shigenori Hayashi
发明人： Kazuo Urata , Naoki Hirose , Shigenori Hayashi
IPC分类号： H01L21/31 , C23C16/34 , C23C16/48 , H01L21/205
CPC分类号： C23C16/488
摘要： A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.
摘要翻译：薄膜制造系统包括具有对紫外线辐射透明的窗口的反应容器; 将气体从反应容器排出到减压状态的方法，将气体引入反应容器中以形成薄膜，激活气体的紫外线辐射源，以及以预定间隔设置的狭缝的方法对紫外线辐射透明的窗户。

10. 发明授权

US5121187A Electric device having a leadframe covered with an antioxidation film 失效
标题翻译：具有覆盖有抗氧化膜的引线框架的电气装置
公开(公告)号：US5121187A
公开(公告)日：1992-06-09
申请号：US421503
申请日：1989-10-11
申请人： Shunpei Yamazaki , Kazuo Urata , Itaru Koyama
发明人： Shunpei Yamazaki , Kazuo Urata , Itaru Koyama
IPC分类号： H01L23/31 , H01L23/495
CPC分类号： H01L23/3142 , H01L23/49586 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48599 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01014 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/181 , H01L2924/19041
摘要： An improved electric device and a manufacturing method for the same is described. The device is for example an IC chip clothed with molding. The IC chip is mounted on a lead frame by means of an adhesive such as a glass-type silver paste which discharges little amount of gases and the rear surface of the lead frame is covered with an antioxidation film of silicon nitride.
摘要翻译：描述了改进的电气装置及其制造方法。该装置例如是具有成型的IC芯片。 IC芯片通过诸如玻璃型银膏的粘合剂安装在引线框架上，该银膏排出少量气体，并且引线框架的后表面被氮化硅的抗氧化膜覆盖。

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