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1. 发明申请

US20090085182A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090085182A1
公开(公告)日：2009-04-02
申请号：US12219382
申请日：2008-07-21
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
IPC分类号： H01L21/58 , H01L23/12
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
摘要翻译：一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω/ cm2的导电膜。

2. 发明授权

US07932589B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07932589B2
公开(公告)日：2011-04-26
申请号：US12219382
申请日：2008-07-21
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
IPC分类号： H01L23/06
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
摘要翻译：一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

3. 发明授权

US08872331B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08872331B2
公开(公告)日：2014-10-28
申请号：US13084996
申请日：2011-04-12
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
IPC分类号： H01L23/10 , H01L23/31 , H01L23/29
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
摘要翻译：一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

4. 发明授权

US08459561B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08459561B2
公开(公告)日：2013-06-11
申请号：US12204320
申请日：2008-09-04
申请人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Nozomi Horikoshi , Hisashi Ohtani
发明人： Tomoyuki Aoki , Takuya Tsurume , Hiroki Adachi , Nozomi Horikoshi , Hisashi Ohtani
IPC分类号： G06K19/06
CPC分类号： H01L23/29 , G06K19/07749 , H01L21/563 , H01L23/145 , H01L23/295 , H01L23/3121 , H01L23/60 , H01L23/66 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2223/6677 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/19041 , H01L2924/3025 , Y10T428/31522 , H01L2924/00
摘要： A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.
摘要翻译：形成包括薄膜晶体管的分离层和半导体元件层。形成与半导体元件层电连接的导电树脂。包含纤维和有机树脂层的第一密封层形成在半导体元件层和导电树脂上。在第一密封层，半导体元件层和分离层中形成凹槽。将液体滴入槽中以分离分离层和半导体元件层。去除导电树脂上的第一密封层以形成开口。一组第一密封层和半导体元件层被分成芯片。芯片结合到形成在基材上的天线。形成包括纤维和有机树脂层的第二密封层，以覆盖天线和芯片。

5. 发明授权

US07534702B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07534702B2
公开(公告)日：2009-05-19
申请号：US11157166
申请日：2005-06-21
申请人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
发明人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/97 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/00
摘要： An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is scattered in the handling of the integrated circuit since the integrated circuit is extremely thin. According to the present invention, multiple openings reaching a peel layer are provided, a material body having a pattern shape that does not cover regions (the openings and a device portion) is provided, and then, a gas or liquid containing fluorine halide is introduced to partially remove the peel layer.
摘要翻译：通过在大玻璃基板上形成由薄膜制成的集成电路并将集成电路传送到另一个背衬来提供可以接收或传输触摸数据，优选不接触的非常小的器件的有效批量生产方法被分割特别是，由于集成电路非常薄，因为集成电路在集成电路的处理中存在散射的威胁，因此难以使用由薄膜制成的集成电路。根据本发明，提供到达剥离层的多个开口，设置具有不覆盖区域（开口和器件部分）的图案形状的材料体，然后引入含有氟化卤的气体或液体以部分地去除剥离层。

6. 发明申请

US20050285231A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050285231A1
公开(公告)日：2005-12-29
申请号：US11157166
申请日：2005-06-21
申请人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
发明人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
IPC分类号： H01L21/461 , H01L21/68 , H01L21/77 , H01L23/58
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/97 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/00
摘要： An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is flied in all directions as the integrated circuit is extremely thin. According to the present invention, multiple holes or grooves reaching the peel layer are provided, and a material body having a pattern shape that does not cover the holes (or grooves) and the device portion is provided, then, gas or liquid containing fluorine halide is introduced to remove selectively the peel layer.
摘要翻译：通过在大玻璃基板上形成由薄膜制成的集成电路并将集成电路传送到另一个背衬来提供可以接收或传输触摸数据，优选不接触的非常小的器件的有效批量生产方法被分割特别是，由于集成电路非常薄，因此存在集成电路在各个方向上飞行的威胁，因此难以使用由薄膜制成的集成电路。根据本发明，提供到达剥离层的多个孔或槽，并且设置具有不覆盖孔（或沟槽）和器件部分的图案形状的材料体，然后将含有卤化物的气体或液体被引入以选择性地去除剥离层。

7. 发明授权

US08101990B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08101990B2
公开(公告)日：2012-01-24
申请号：US11913578
申请日：2006-05-25
申请人： Takuya Tsurume , Nozomi Horikoshi
发明人： Takuya Tsurume , Nozomi Horikoshi
IPC分类号： H01L29/792
CPC分类号： H01L27/1266 , H01L27/1214 , H01L29/78603 , H01L29/78645
摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.
摘要翻译：提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层，设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

8. 发明申请

US20090090940A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090090940A1
公开(公告)日：2009-04-09
申请号：US11913578
申请日：2006-05-25
申请人： Takuya Tsurume , Nozomi Horikoshi
发明人： Takuya Tsurume , Nozomi Horikoshi
IPC分类号： H01L29/78
CPC分类号： H01L27/1266 , H01L27/1214 , H01L29/78603 , H01L29/78645
摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.
摘要翻译：提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层，设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

9. 发明授权

US07307006B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07307006B2
公开(公告)日：2007-12-11
申请号：US11354824
申请日：2006-02-16
申请人： Susumu Okazaki , Nozomi Horikoshi
发明人： Susumu Okazaki , Nozomi Horikoshi
IPC分类号： H01L21/30
CPC分类号： H01L24/86 , H01L21/6835 , H01L23/49855 , H01L23/5389 , H01L2221/68368 , H01L2224/7965 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19043 , H01L2924/00
摘要： It is an object of the present invention to provide a technology to manufacture a semiconductor sheet or a semiconductor chip with a high yield using a circuit having a thin film transistor. A manufacturing method for a semiconductor device comprises: attaching a flexible base material to an element layer x times (x is an integer number of 4 or more), wherein a thickness of a base material which is attached to the element layer (y+1)th (y is an integer number of 1 or more and less than x) time is the same or smaller than that of a base material which is attached to the element layer y-th (y is an integer number of 1 or more and less than x) time.
摘要翻译：本发明的目的是提供一种使用具有薄膜晶体管的电路制造具有高产率的半导体薄片或半导体芯片的技术。一种半导体器件的制造方法，包括：将柔性基材附着到元件层×倍（x为4以上的整数），其中，附着于元件层（y + 1）的基材的厚度）y（y为1以上且小于x的整数）时间与附着于元件层y（y为1以上的整数的基材）的时间相同或更小，小于x）时间。

10. 发明申请

US20060194371A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060194371A1
公开(公告)日：2006-08-31
申请号：US11354824
申请日：2006-02-16
申请人： Susumu Okazaki , Nozomi Horikoshi
发明人： Susumu Okazaki , Nozomi Horikoshi
IPC分类号： H01L21/50
CPC分类号： H01L24/86 , H01L21/6835 , H01L23/49855 , H01L23/5389 , H01L2221/68368 , H01L2224/7965 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01082 , H01L2924/04941 , H01L2924/04953 , H01L2924/09701 , H01L2924/14 , H01L2924/19043 , H01L2924/00
摘要： It is an object of the present invention to provide a technology to manufacture a semiconductor sheet or a semiconductor chip with a high yield using a circuit having a thin film transistor. A manufacturing method for a semiconductor device comprises: attaching a flexible base material to an element layer x times (x is an integer number of 4 or more), wherein a thickness of a base material which is attached to the element layer (y+1)th (y is an integer number of 1 or more and less than x) time is the same or smaller than that of a base material which is attached to the element layer y-th (y is an integer number of 1 or more and less than x) time.
摘要翻译：本发明的目的是提供一种使用具有薄膜晶体管的电路制造具有高产率的半导体薄片或半导体芯片的技术。一种半导体器件的制造方法，包括：将柔性基材附着到元件层×倍（x为4以上的整数），其中，附着于元件层（y + 1）的基材的厚度）y（y为1以上且小于x的整数）时间与附着于元件层y（y为1以上的整数的基材）的时间相同或更小，小于x）时间。

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