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1. 发明申请

US20130037884A1 NONVOLATILE MEMORY AND ELECTRONIC APPARATUS 失效
公开(公告)号：US20130037884A1
公开(公告)日：2013-02-14
申请号：US13549914
申请日：2012-07-16
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Jun KOYAMA , Takeshi FUKUNAGA
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Jun KOYAMA , Takeshi FUKUNAGA
IPC分类号： H01L29/786
CPC分类号： H01L29/66825 , H01L21/28273 , H01L27/115 , H01L27/1203 , H01L29/42324 , H01L29/78609 , H01L29/78675 , H01L29/7881
摘要： An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.

2. 发明申请

US20060145153A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060145153A1
公开(公告)日：2006-07-06
申请号：US11275850
申请日：2006-01-31
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Takeshi FUKUNAGA
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Takeshi FUKUNAGA
IPC分类号： H01L31/0376
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1277 , H01L29/78696
摘要： A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.
摘要翻译：具有CMOS结构的半导体器件，其中在制造CMOS电路时，在形成栅极绝缘膜之前添加赋予P沟道型半导体器件的有源层p型导电性的杂质元素。然后，通过对有源层进行热氧化处理，对杂质元素进行再分配，使有源层主表面的杂质元素的浓度最小化。阈值电压的精确控制由痕量存在的杂质元素使能。

3. 发明申请

US20100134709A1 REFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND DEVICE USING SAME 有权
标题翻译：反射液晶显示面板和使用相同的装置
公开(公告)号：US20100134709A1
公开(公告)日：2010-06-03
申请号：US12683473
申请日：2010-01-07
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Jun KOYAMA , Satoshi TERAMOTO
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Jun KOYAMA , Satoshi TERAMOTO
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02B27/017 , G02B2027/0138 , G02F1/133553 , G02F1/13454 , G02F2203/02 , H01L27/124 , H01L29/41733
摘要： There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.
摘要翻译：公开了一种有源矩阵反射型液晶显示面板，其中有源矩阵电路与外围驱动电路集成。外围驱动电路中的金属线与像素电极同时形成。因此，处理顺序和结构都不复杂。

4. 发明申请

US20060267018A1 THIN FILM CIRCUIT 失效
标题翻译：薄膜电路
公开(公告)号：US20060267018A1
公开(公告)日：2006-11-30
申请号：US11462886
申请日：2006-08-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Hisashi OHTANI
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Hisashi OHTANI
IPC分类号： H01L29/76
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02672 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A practical operational amplifier circuit is formed using thing film transisters. An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein cumulative distribution of mobilities of the n-channel type thin film transistors becomes 90% or more at 260 cm2/Vs and wherein cumulative distribution of mobilities of the p-channel type thin film transistors becomes 90% or more at 150 cm2/Vs. The thin film transistors have active layers formed using a crystalline silicon film fabricated using a metal element that selected to promote crystallization of silicon. The crystalline silicon film is a collection of a multiplicity of elongate crystal structures extending in a certain direction, and the above-described characteristics can be achieved by matching the extending direction and the moving direction of carriers.
摘要翻译：使用物体转换器形成实际的运算放大器电路。运算放大器电路由形成在石英衬底上的薄膜晶体管形成，其中n沟道型薄膜晶体管的迁移率的累积分布在260cm 2 / Vs处变为90％以上，其中累积 p沟道型薄膜晶体管的迁移率的分布在150cm 2 / Vs下变为90％以上。薄膜晶体管具有使用使用选择促进硅的结晶的金属元素制造的晶体硅膜形成的有源层。结晶硅膜是沿一定方向延伸的多个细长晶体结构的集合，并且可以通过匹配载流子的延伸方向和移动方向来实现上述特性。

5. 发明申请

US20120019739A1 REFLECTIVE LIQUID CRYSTAL DISPLAY PANEL AND DEVICE USING SAME 有权
标题翻译：反射液晶显示面板和使用相同的装置
公开(公告)号：US20120019739A1
公开(公告)日：2012-01-26
申请号：US13247342
申请日：2011-09-28
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Jun KOYAMA , Satoshi TERAMOTO
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Jun KOYAMA , Satoshi TERAMOTO
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02B27/017 , G02B2027/0138 , G02F1/133553 , G02F1/13454 , G02F2203/02 , H01L27/124 , H01L29/41733
摘要： There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.
摘要翻译：公开了一种有源矩阵反射型液晶显示面板，其中有源矩阵电路与外围驱动电路集成。外围驱动电路中的金属线与像素电极同时形成。因此，处理顺序和结构都不复杂。

6. 发明申请

US20110186949A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110186949A1
公开(公告)日：2011-08-04
申请号：US13084996
申请日：2011-04-12
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO , Takaaki KOEN , Yuto YAKUBO , Makoto YANAGISAWA , Hisashi OHTANI , Eiji SUGIYAMA , Nozomi HORIKOSHI
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO , Takaaki KOEN , Yuto YAKUBO , Makoto YANAGISAWA , Hisashi OHTANI , Eiji SUGIYAMA , Nozomi HORIKOSHI
IPC分类号： H01L29/66
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
摘要翻译：一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

7. 发明申请

US20120199840A1 SEMICONDUCTOR DEVICE HAVING A PIXEL MATRIX CIRCUIT THAT INCLUDES A PIXEL TFT AND A STORAGE CAPACITOR 有权
标题翻译：具有像素矩阵电路的半导体器件，其包括像素TFT和存储电容器
公开(公告)号：US20120199840A1
公开(公告)日：2012-08-09
申请号：US13443585
申请日：2012-04-10
申请人： Shunpei YAMAZAKI , Yu Yamazaki , Jun Koyama , Takayuki Ikeda , Hiroshi Shibata , Hidehito Kitakado , Takeshi Fukunaga
发明人： Shunpei YAMAZAKI , Yu Yamazaki , Jun Koyama , Takayuki Ikeda , Hiroshi Shibata , Hidehito Kitakado , Takeshi Fukunaga
IPC分类号： H01L29/786 , H01L29/04
CPC分类号： H01L27/124 , G02F1/136213 , H01L27/1255 , H01L29/78645
摘要： In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 113a are provided in an n-channel TFT. The LDD regions 107a and 107b overlap the first wiring line 102a and not overlap the second wiring line 113a. Thus, applying a gate voltage to the first wiring line forms the GOLD structure, while not applying forms the LLD structure. In this way, the GOLD structure and the LLD structure can be used appropriately in accordance with the respective specifications required for the circuits.
摘要翻译：在基板100上形成的CMOS电路中，在n沟道TFT中设置有从属栅极布线（第1布线）102a和主栅极布线（第2布线）113a。 LDD区域107a和107b与第一布线102a重叠，而不与第二布线113a重叠。因此，向第一布线施加栅极电压形成GOLD结构，而不施加形成LLD结构。以这种方式，可以根据电路所需的相应规格适当地使用GOLD结构和LLD结构。

8. 发明申请

US20110263109A1 ELECTROOPTICAL DEVICE 审中-公开
标题翻译：电子设备
公开(公告)号：US20110263109A1
公开(公告)日：2011-10-27
申请号：US13177896
申请日：2011-07-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Yoshiharu HIRAKATA , Takeshi FUKUNAGA
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Yoshiharu HIRAKATA , Takeshi FUKUNAGA
IPC分类号： H01L21/425
CPC分类号： H05B37/00 , G02F1/13452 , G02F1/13454 , G09G3/3648 , G09G3/3688 , G09G2300/0408
摘要： In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other between the first substrate 101 and the second substrate 105. By this, it is possible to make the area of the first substrate 101 minimum.
摘要翻译：在包括第一基板101和第二基板105之间的电光调制层的电光装置中，除了安装有IC芯片110和111的边缘之外，第一基板101和第二基板105的所有边缘107至109被修整在第一基板101和第二基板105之间彼此相对。由此，可以使第一基板101的面积最小化。

9. 发明申请

US20090233390A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090233390A1
公开(公告)日：2009-09-17
申请号：US12408194
申请日：2009-03-20
申请人： Shunpei YAMAZAKI , Takeshi FUKUNAGA , Jun KOYAMA , Kazutaka INUKAI
发明人： Shunpei YAMAZAKI , Takeshi FUKUNAGA , Jun KOYAMA , Kazutaka INUKAI
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/127 , H01L27/3244
摘要： The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided.
摘要翻译：根据本发明的发光器件的特征在于，形成包括多个导电膜的栅电极，并且利用蚀刻中的导电膜的选择性并使用它们来调节有源层中的杂质区域的浓度作为面具。本发明减少了相对于制造用于提高发光装置的产量的TFT并缩短其制造术语的光刻步骤的数量，通过该步骤，廉价地提供了发光装置和电子设备。

10. 发明申请

US20100295046A1 SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体薄膜和半导体器件
公开(公告)号：US20100295046A1
公开(公告)日：2010-11-25
申请号：US12849964
申请日：2010-08-04
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Toru MITSUKI , Akiharu MIYANAGA , Yasushi OGATA
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Toru MITSUKI , Akiharu MIYANAGA , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译：在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。得到的晶体半导体薄膜显示{110}取向。由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

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