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1. 发明申请

US20070298555A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070298555A1
公开(公告)日：2007-12-27
申请号：US11882907
申请日：2007-08-07
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/78621 , H01L29/78624 , H01L29/78675 , H01L29/78678
摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing an inert gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.
摘要翻译：目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加在制造半导体器件的方法中的吞吐量。利用本发明，在具有晶体结构的第一半导体膜上形成阻挡层，第二半导体膜和含有惰性气体元件的第三半导体膜。进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。

2. 发明授权

US07122450B2 Process for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07122450B2
公开(公告)日：2006-10-17
申请号：US10098153
申请日：2002-03-15
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78675 , H01L29/78678
摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.
摘要翻译：在绝缘表面上形成第一非晶半导体膜。加入促进结晶的催化剂元素。此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。在第一结晶半导体膜上形成阻挡层和第二半导体层。第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20，浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 ^{3 。随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。}

3. 发明授权

US06872638B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06872638B2
公开(公告)日：2005-03-29
申请号：US10078240
申请日：2002-02-20
申请人： Shunpei Yamazaki , Toru Mitsuki , Tamae Takano
发明人： Shunpei Yamazaki , Toru Mitsuki , Tamae Takano
IPC分类号： H01L21/324 , B23K26/073 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , B23K26/0732 , B23K26/0738 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L21/2026
摘要： A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions may develop in the semiconductor film. Thus, the film quality of the crystalline semiconductor film obtained will drop in some cases. With the present invention, distortions of the semiconductor film are reduced by heating the semiconductor film using a heat treatment process after performing crystallization of the semiconductor film using laser light. Compared to the localized heating due to the irradiation of laser light, the heat treatment process is performed over the entire substrate and semiconductor film. Therefore, it is possible to reduce distortions formed in the semiconductor film and to increase the physical properties of the semiconductor film.
摘要翻译：作为使半导体膜结晶化的方法，提供了进行激光照射的方法。然而，如果激光照射到半导体膜上，则半导体膜瞬间熔化并局部膨胀。衬底和半导体膜之间的温度梯度是陡峭的，半导体膜中可能会发生变形。因此，获得的结晶半导体膜的膜质量在某些情况下将下降。通过本发明，通过使用激光进行半导体膜的结晶后，使用热处理工艺来加热半导体膜来减小半导体膜的失真。与通过照射激光的局部加热相比，在整个基板和半导体膜上进行热处理工艺。因此，可以减少形成在半导体膜中的失真并增加半导体膜的物理性能。

4. 发明申请

US20050032336A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050032336A1
公开(公告)日：2005-02-10
申请号：US10940821
申请日：2004-09-15
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/28 , H01L21/322 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/2022 , H01L21/3221 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L29/78678
摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.
摘要翻译：旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108）具有晶体结构。进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107））。之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。

5. 发明授权

US06822262B2 Semiconductor thin film and semiconductor device 失效
标题翻译：半导体薄膜和半导体器件
公开(公告)号：US06822262B2
公开(公告)日：2004-11-23
申请号：US10295882
申请日：2002-11-18
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Akiharu Miyanaga , Yasushi Ogata
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Akiharu Miyanaga , Yasushi Ogata
IPC分类号： H01L2904
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译：在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。得到的晶体半导体薄膜显示{110}取向。由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

6. 发明授权

US06787807B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06787807B2
公开(公告)日：2004-09-07
申请号：US09882265
申请日：2001-06-18
申请人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
发明人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
IPC分类号： H01L2904
CPC分类号： H01L29/78696 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/045 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78624 , H01L29/78675 , H01L29/78684
摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the {101} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the {001} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the {111} lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.
摘要翻译：通过使非晶半导体膜结晶而获得的结晶半导体膜的取向得到改善，并且提供了由该结晶半导体膜形成的TFT。在其TFT由主要含硅的半导体层形成的半导体器件中，半导体层具有沟道形成区和掺杂有一种导电类型的杂质的杂质区。沟道形成区域的20％以上是相对于结晶半导体膜的表面形成等于或小于10度的角度的{101}晶格面，通过电子反向散射衍射图法检测的平面，3％以下的沟道形成区域相对于结晶半导体膜的表面形成等于或小于10度的{001}晶格面，5％以下的沟道形成区域为相对于晶体半导体膜的表面形成等于或小于10度的角度的{111}晶格面。

7. 发明授权

US06326249B1 Semiconductor device and process for producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06326249B1
公开(公告)日：2001-12-04
申请号：US09139662
申请日：1998-08-25
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
IPC分类号： H01L2100
CPC分类号： H01L29/78675 , G02F1/13454 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/78603
摘要： A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influence of the concave part is removed by conducting a flattening treatment and heat treatment of the undercoat film of the semiconductor thin film.
摘要翻译：一种半导体器件，包括具有绝缘表面层的衬底和在其上形成的半导体薄膜的有源层，其中所述衬底和与衬底接触的绝缘表面层各自具有至少一个凹部，并且所述凹部通过对半导体薄膜的底涂层进行扁平化处理和热处理来除去部分。

8. 发明授权

US6107639A Semiconductor device with rod like crystals and a recessed insulation layer 有权
标题翻译：具有棒状晶体和凹陷绝缘层的半导体器件
公开(公告)号：US6107639A
公开(公告)日：2000-08-22
申请号：US139656
申请日：1998-08-25
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
IPC分类号： H01L21/20 , H01L21/00 , H01L21/336 , H01L29/04 , H01L29/40 , H01L29/786
CPC分类号： H01L29/78603 , H01L21/3226 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L21/02532 , H01L21/02672
摘要： An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating film 103 is flattened to form the under insulating layer 104. By this flattening process, the distance L1, L2, . . . , Ln between the recesses 106a, 106b, 106d of the under insulating layer 104 is made 0.3 .mu.m or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating film 104 is made 0.3 nm or less. By this, in the recesses 106a, 106b, 106d, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.
摘要翻译：在石英或半导体基板100上形成用于制造绝缘层104的绝缘膜103.形成在绝缘膜103的表面上的与基板100的凹部101a〜101d对应的凹部105a〜105d。绝缘膜103被平坦化以形成下部绝缘层104.通过该平坦化处理，距离L1，L2，。。在绝缘层104的凹部106a，106b，106d之间的Ln为0.3μm以上，各凹部的深度为10nm以下。下绝缘膜104的表面的均方根表面粗糙度为0.3nm以下。由此，在凹部106a，106b，106d中，可以避免阻止半导体薄膜的晶体生长，并且晶粒边界可以基本消失。

9. 发明授权

US07772592B2 Semiconductor thin film and semiconductor device 有权
公开(公告)号：US07772592B2
公开(公告)日：2010-08-10
申请号：US11984467
申请日：2007-11-19
申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Akiharu Miyanaga , Yasushi Ogata
发明人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Akiharu Miyanaga , Yasushi Ogata
IPC分类号： H01L29/04 , H01L29/76
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

10. 发明授权

US07503975B2 Semiconductor device and fabrication method therefor 有权
公开(公告)号：US07503975B2
公开(公告)日：2009-03-17
申请号：US09892225
申请日：2001-06-25
申请人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
发明人： Shunpei Yamazaki , Toru Mitsuki , Kenji Kasahara , Taketomi Asami , Tamae Takano , Takeshi Shichi , Chiho Kokubo
IPC分类号： C30B1/00
CPC分类号： H01L27/1281 , G02F1/13454 , H01L27/1285 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78684 , Y10S117/904
摘要： In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low. A semiconductor material which contains silicon as its main component and 0.1-10 atomic % of germanium is used as a first layer, and an amorphous silicon film is used as a second layer. Laser light is irradiated to crystallize the amorphous semiconductor films, whereby a good semiconductor film is obtained. In addition, TFTs are fabricated by using such a semiconductor film.

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