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1. 发明申请

US20100295046A1 SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体薄膜和半导体器件
公开(公告)号：US20100295046A1
公开(公告)日：2010-11-25
申请号：US12849964
申请日：2010-08-04
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Toru MITSUKI , Akiharu MIYANAGA , Yasushi OGATA
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Toru MITSUKI , Akiharu MIYANAGA , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译：在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。得到的晶体半导体薄膜显示{110}取向。由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

2. 发明申请

US20080286950A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080286950A1
公开(公告)日：2008-11-20
申请号：US12175481
申请日：2008-07-18
申请人： Akiharu MIYANAGA , Hisashi OHTANI , Yasuhiko TAKEMURA
发明人： Akiharu MIYANAGA , Hisashi OHTANI , Yasuhiko TAKEMURA
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , A61B18/20 , A61B2018/20359 , B23K26/08 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively.
摘要翻译：制造使用结晶半导体膜的半导体器件。通过向催化剂金属提供非晶硅膜以促进其结晶，然后加热进行热结晶，形成结晶半导体膜，随后将结晶膜进一步暴露于激光以提高结晶度。选择半导体膜中的催化剂金属的浓度和添加有催化剂金属的区域的位置，以便可以获得期望的结晶度和期望的晶体结构，例如垂直晶体生长或横向晶体生长。此外，用于有源矩阵型液晶装置的电路基板的有源元件和驱动元件分别由具有期望的结晶度和晶体结构的这种半导体器件形成。

3. 发明申请

US20090075460A1 PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的工艺
公开(公告)号：US20090075460A1
公开(公告)日：2009-03-19
申请号：US12269294
申请日：2008-11-12
申请人： Hisashi OHTANI , Takeshi FUKUNAGA , Akiharu MIYANAGA
发明人： Hisashi OHTANI , Takeshi FUKUNAGA , Akiharu MIYANAGA
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02675 , H01L21/2026 , H01L29/66757
摘要： A process for fabricating a semiconductor device comprising the steps of introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：向非晶硅膜引入加速非晶硅膜结晶的金属元素; 对非晶硅膜进行热处理以获得结晶硅膜; 向结晶硅膜照射激光束或强光; 并对用激光束或强光照射的结晶硅膜进行热处理。

4. 发明申请

US20120034766A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120034766A1
公开(公告)日：2012-02-09
申请号：US13209861
申请日：2011-08-15
申请人： Hisashi OHTANI , Akiharu MIYANAGA , Takeshi FUKUNAGA , Hongyong ZHANG
发明人： Hisashi OHTANI , Akiharu MIYANAGA , Takeshi FUKUNAGA , Hongyong ZHANG
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L27/1277 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78678 , Y10S148/016
摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
摘要翻译：一种用于制造高度稳定和可靠的半导体的方法，包括：用含有能够加速非晶硅膜结晶的催化剂元素的溶液涂覆非晶硅膜的表面，然后对非晶硅膜进行热处理，使其结晶电影。

5. 发明申请

US20080258147A1 SEMICONDUCTOR DEVICE FORMING METHOD 失效
标题翻译：半导体器件形成方法
公开(公告)号：US20080258147A1
公开(公告)日：2008-10-23
申请号：US12143035
申请日：2008-06-20
申请人： Hongyong ZHANG , Toru TAKAYAMA , Yasuhiko TAKEMURA , Akiharu MIYANAGA , Hisashi OHTANI
发明人： Hongyong ZHANG , Toru TAKAYAMA , Yasuhiko TAKEMURA , Akiharu MIYANAGA , Hisashi OHTANI
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

6. 发明申请

US20090134395A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：主动矩阵液晶显示装置
公开(公告)号：US20090134395A1
公开(公告)日：2009-05-28
申请号：US12358617
申请日：2009-01-23
申请人： Hisashi OHTANI , Yasushi OGATA
发明人： Hisashi OHTANI , Yasushi OGATA
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/78645
摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.
摘要翻译：形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。在第一绝缘膜上形成平坦度高的第二绝缘膜。通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此首先将绝缘膜用作电介质，由此在导电膜和金属布线之间形成像素的辅助电容器。可以通过在辅助电容器形成液晶分子的取向紊乱（即，旋错）的大的选择区域中来增加有效孔径比。

7. 发明申请

US20130001581A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 失效
标题翻译：主动矩阵液晶显示装置
公开(公告)号：US20130001581A1
公开(公告)日：2013-01-03
申请号：US13587109
申请日：2012-08-16
申请人： Hisashi OHTANI , Yasushi OGATA
发明人： Hisashi OHTANI , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/78645
摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with the first insulating film serving as a dielectric.
摘要翻译：形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。在第一绝缘膜上形成平坦度高的第二绝缘膜。通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此在第一绝缘膜用作电介质的状态下，在导电膜和金属布线之间形成像素的辅助电容器。

8. 发明申请

US20110215327A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：主动矩阵液晶显示装置
公开(公告)号：US20110215327A1
公开(公告)日：2011-09-08
申请号：US13111344
申请日：2011-05-19
申请人： Hisashi OHTANI , Yasushi OGATA
发明人： Hisashi OHTANI , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/78645
摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.
摘要翻译：形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。在第一绝缘膜上形成平坦度高的第二绝缘膜。通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此首先将绝缘膜用作电介质，由此在导电膜和金属布线之间形成像素的辅助电容器。可以通过在辅助电容器形成液晶分子的取向紊乱（即，旋错）的大的选择区域中来增加有效孔径比。

9. 发明申请

US20060267018A1 THIN FILM CIRCUIT 失效
标题翻译：薄膜电路
公开(公告)号：US20060267018A1
公开(公告)日：2006-11-30
申请号：US11462886
申请日：2006-08-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Hisashi OHTANI
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Hisashi OHTANI
IPC分类号： H01L29/76
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02672 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A practical operational amplifier circuit is formed using thing film transisters. An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein cumulative distribution of mobilities of the n-channel type thin film transistors becomes 90% or more at 260 cm2/Vs and wherein cumulative distribution of mobilities of the p-channel type thin film transistors becomes 90% or more at 150 cm2/Vs. The thin film transistors have active layers formed using a crystalline silicon film fabricated using a metal element that selected to promote crystallization of silicon. The crystalline silicon film is a collection of a multiplicity of elongate crystal structures extending in a certain direction, and the above-described characteristics can be achieved by matching the extending direction and the moving direction of carriers.
摘要翻译：使用物体转换器形成实际的运算放大器电路。运算放大器电路由形成在石英衬底上的薄膜晶体管形成，其中n沟道型薄膜晶体管的迁移率的累积分布在260cm 2 / Vs处变为90％以上，其中累积 p沟道型薄膜晶体管的迁移率的分布在150cm 2 / Vs下变为90％以上。薄膜晶体管具有使用使用选择促进硅的结晶的金属元素制造的晶体硅膜形成的有源层。结晶硅膜是沿一定方向延伸的多个细长晶体结构的集合，并且可以通过匹配载流子的延伸方向和移动方向来实现上述特性。

10. 发明申请

US20120108049A1 CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
标题翻译：晶体半导体薄膜，其制造方法，半导体器件及其制造方法
公开(公告)号：US20120108049A1
公开(公告)日：2012-05-03
申请号：US13338366
申请日：2011-12-28
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Tamae TAKANO
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Tamae TAKANO
IPC分类号： H01L21/28
CPC分类号： H01L29/04 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757 , H01L29/78675
摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.
摘要翻译：提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

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