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1. 发明授权

US06548402B2 Method of depositing a thick titanium nitride film 有权
标题翻译：沉积厚氮化钛膜的方法
公开(公告)号：US06548402B2
公开(公告)日：2003-04-15
申请号：US09330696
申请日：1999-06-11
申请人： Shulin Wang , Ming Xi , Frederick Wu , Ramanujapuram A. Srinivas , Yehuda Demayo , Zvi Lando , Mei Chang , Russell C. Ellwanger
发明人： Shulin Wang , Ming Xi , Frederick Wu , Ramanujapuram A. Srinivas , Yehuda Demayo , Zvi Lando , Mei Chang , Russell C. Ellwanger
IPC分类号： C23C1634
CPC分类号： H01L21/76846 , C23C16/34 , H01L21/28556 , H01L21/76877
摘要： A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.
摘要翻译：使用氨（NH 3）与四氯化钛（TiCl 4）之间的反应形成氮化钛（TiN）层的方法。在一个实施方案中，使用约8.5的NH 3 :TiCl 4比率在约20托的压力下在约500℃的温度下沉积TiN层。在另一个实施例中，通过使用具有不同NH 3 :TiCl 4比率的工艺条件交替沉积不同厚度的TiN层来形成复合TiN层。在一个优选的实施方案中，以大约85的NH 3 :TiCl 4比例形成小于约的TiN层，然后以约8.5的NH 3 :TiCl 4比率沉积较厚的TiN层。通过使用两种不同的工艺条件重复替代膜沉积，形成复合TiN层。与标准TiN工艺相比，该复合TiN层具有改进的整体台阶覆盖和减小的应力，适用于小型几何填塞应用。

2. 发明授权

US06242347B1 Method for cleaning a process chamber 有权
标题翻译：清洁处理室的方法
公开(公告)号：US06242347B1
公开(公告)日：2001-06-05
申请号：US09163711
申请日：1998-09-30
申请人： Anand Vasudev , Toshio Itoh , Ramanujapuram A. Srinivas , Frederick Wu , Li Wu , Brian Boyle , Mei Chang
发明人： Anand Vasudev , Toshio Itoh , Ramanujapuram A. Srinivas , Frederick Wu , Li Wu , Brian Boyle , Mei Chang
IPC分类号： H01L2144
CPC分类号： H01L21/67028 , Y10S438/905 , Y10S438/906
摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.
摘要翻译：一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空在引入下一个晶圆之前。晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。在一个优选实施例中，在利用该腔室以沉积这种材料之前，在室的内表面上沉积薄的钛保护膜。在每次两级清洁之后补充保护层。

3. 发明授权

US06524952B1 Method of forming a titanium silicide layer on a substrate 失效
标题翻译：在基板上形成硅化钛层的方法
公开(公告)号：US06524952B1
公开(公告)日：2003-02-25
申请号：US09597434
申请日：2000-06-20
申请人： Ramanujapuram A. Srinivas , Brian Metzger , Shulin Wang , Frederick C. Wu
发明人： Ramanujapuram A. Srinivas , Brian Metzger , Shulin Wang , Frederick C. Wu
IPC分类号： H01L214763
CPC分类号： H01L21/76831 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L21/76856 , Y10S438/906 , Y10S438/909
摘要： A method of forming a silicide layer in contact with a silicon substrate. The method comprises forming the silicide layer by supplying a silicon-containing source that is different from the silicon substrate, such that the silicon in the silicide layer originates primarily from the silicon-containing source.
摘要翻译：一种形成与硅衬底接触的硅化物层的方法。该方法包括通过提供不同于硅衬底的含硅源形成硅化物层，使得硅化物层中的硅主要来自含硅源。

4. 发明授权

US06432479B1 Method for in-situ, post deposition surface passivation of a chemical vapor deposited film 有权
公开(公告)号：US06432479B1
公开(公告)日：2002-08-13
申请号：US09182955
申请日：1998-10-29
申请人： Mei Chang , Ramanujapuram A. Srinivas , Li Wu
发明人： Mei Chang , Ramanujapuram A. Srinivas , Li Wu
IPC分类号： C23C1634
摘要： Method for passivating a layer of titanium that has been deposited on a substrate in a reaction chamber to coat the titanium thereby reducing the likelihood of contamination by byproducts of the deposition process or ambient oxygen or similar reactants. The method includes adding a flow of hydrogen and a flow of nitrogen to the chamber. The flows of hydrogen and nitrogen are approximately 800 sccm and continue for approximately 10-30 seconds respectively. The method may further comprise the step of forming a nitrogen plasma in the chamber for approximately 10 seconds wherein such case the flows of hydrogen and nitrogen continue for approximately 8 seconds respectively. The plasma is formed by applying RF power to an electrode located within said chamber or by a remote plasma source and channeled to said reactor chamber. Alternately, the passivation layer may be formed just by using a nitrogen plama alone for approximately 10-30 seconds at the same RF power level. The plasma in either case may further comprise hydrogen and argon and the layer of titanium has been deposited by CVD.

5. 发明授权

US06193813B1 Utilization of SiH4 soak and purge in deposition processes 失效
标题翻译：在沉积过程中利用SiH4浸泡和吹扫
公开(公告)号：US06193813B1
公开(公告)日：2001-02-27
申请号：US09162336
申请日：1998-09-28
申请人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
发明人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
IPC分类号： C23C1600
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4 into the chamber. Preferably, WSix is deposited on a semiconductor wafer using a mixture comprising WF6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus for practicing methods of the invention includes a chamber, means for depositing a material, such as WSix, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过将SiH 4流入室中来清除残余的WF6和二氯硅烷。另外在真空处理中处理衬底的方法腔室包括通过在将衬底沉积到衬底表面之前将SiH 4流入室中来调节室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和降低的膜应力。真空处理本发明的实施方法的装置包括：室，用于在诸如WSix之间沉积材料的装置，在设置在室内的基板的表面上，以及用于用SiH 4吹扫室的装置。

6. 发明授权

US5817576A Utilization of SiH.sub.4 soak and purge in deposition processes 失效
标题翻译：在沉积过程中利用SiH4浸泡和吹扫
公开(公告)号：US5817576A
公开(公告)日：1998-10-06
申请号：US743929
申请日：1996-11-05
申请人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
发明人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
IPC分类号： C23C16/44 , C23C16/02 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过使SiH 4流入室中来清洗残留的WF 6和二氯硅烷。在真空处理室中处理衬底的另一种方法包括通过在将衬底沉积在衬底的表面上之前将SiH 4流入腔室来调节腔室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和薄膜应力减小。还提供了用于本发明的实施方法的真空处理装置，并且包括室，用于在布置在室内的基板的表面上沉积诸如WSix的材料的装置以及用SiH 4吹扫室的装置。

7. 发明授权

US5780360A Purge in silicide deposition processes dichlorosilane 失效
标题翻译：二氯硅烷在硅化物沉积工艺中的清洗
公开(公告)号：US5780360A
公开(公告)日：1998-07-14
申请号：US666976
申请日：1996-06-20
申请人： Jennifer Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Weihar Telford
发明人： Jennifer Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Weihar Telford
IPC分类号： C23C16/44 , C23C16/02 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过使SiH 4流入室中来清洗残留的WF 6和二氯硅烷。在真空处理室中处理衬底的另一种方法包括通过在将衬底沉积在衬底的表面上之前将SiH 4流入腔室来调节腔室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和薄膜应力减小。还提供了用于本发明的实施方法的真空处理装置，并且包括室，用于在布置在室内的基板的表面上沉积诸如WSix的材料的装置以及用SiH 4吹扫室的装置。

8. 发明申请

US20120156875A1 LASER BASED PROCESSING OF LAYERED MATERIALS 有权
标题翻译：层状材料的激光加工
公开(公告)号：US20120156875A1
公开(公告)日：2012-06-21
申请号：US13234751
申请日：2011-09-16
申请人： Ramanujapuram A. Srinivas , Michael Greenberg , David Gaudiosi , Michael Mielke , Tim Booth
发明人： Ramanujapuram A. Srinivas , Michael Greenberg , David Gaudiosi , Michael Mielke , Tim Booth
IPC分类号： H01L21/768 , B23K26/00
CPC分类号： B23K26/40 , B23K26/36 , B23K2103/172
摘要： Systems and methods for laser based processing of layered materials. Methods may include selectively adjusting ultrafast laser output of an ultrafast laser device based upon one or more physical attributes of a layer of the layered material, applying the ultrafast laser output of the ultrafast laser device to the layer of the layered material along a tool path to ablate the layer along the tool path, and then re-executing the steps to ablate one or more additional layers, the re-execution occurring for each distinct layer of the layered material that is to be ablated.
摘要翻译：层状材料激光加工的系统和方法。方法可以包括基于层状材料层的一个或多个物理属性来选择性地调节超快激光装置的超快激光输出，将超快激光装置的超快激光输出沿工具路径施加到分层材料层沿着刀具路径烧蚀层，然后重新执行步骤以消融一个或多个附加层，对于要被消融的层状材料的每个不同层发生重新执行。

9. 发明申请

US20120152915A1 SINGULATION OF LAYERED MATERIALS USING SELECTIVELY VARIABLE LASER OUTPUT 有权
标题翻译：使用可选择的可变激光输出对层状材料进行整理
公开(公告)号：US20120152915A1
公开(公告)日：2012-06-21
申请号：US13234795
申请日：2011-09-16
申请人： Ramanujapuram A. Srinivas , Michael Greenberg , David Gaudiosi , Michael Mielke , Tim Booth
发明人： Ramanujapuram A. Srinivas , Michael Greenberg , David Gaudiosi , Michael Mielke , Tim Booth
IPC分类号： B23K26/38
CPC分类号： B23K26/40 , B23K26/36 , B23K2103/172
摘要： Systems and methods for processing, selectively ablating, and singulating layered materials. According to some embodiments, methods for selectively ablating a layered material may include selectively varying a wavelength of at least a portion of a primary ultrafast laser beam to create a secondary ultrafast laser beam with a second wavelength, the primary ultrafast laser beam being configured to ablate a layer of the layered material, the secondary ultrafast laser beam being configured to ablate an additional layer of the layered material and applying the first and second ultrafast laser beams to the layered material to create a singulated product.
摘要翻译：用于处理，选择性地烧蚀和分层的材料的系统和方法。根据一些实施例，用于选择性地烧蚀层状材料的方法可以包括选择性地改变主要超快激光束的至少一部分的波长以产生具有第二波长的次级超快激光束，所述主超快激光束被配置为消融所述层状材料层，所述次级超快激光束被配置为消除所述分层材料的附加层，并将所述第一和第二超快激光束施加到所述分层材料以产生单一产品。

10. 发明授权

US5940733A Method of making polysilicon/tungsten silicide multilayer composite on an integrated circuit structure 失效
标题翻译：在集成电路结构上制造多晶硅/硅化钨多层复合材料的方法
公开(公告)号：US5940733A
公开(公告)日：1999-08-17
申请号：US901879
申请日：1997-07-29
申请人： Israel Beinglass , Ramanujapuram A. Srinivas
发明人： Israel Beinglass , Ramanujapuram A. Srinivas
IPC分类号： B32B9/00 , H01L21/28 , H01L21/285 , H01L21/3215 , H01L21/768 , H01L23/485 , H01L21/283
CPC分类号： H01L21/32155 , H01L21/28061 , H01L21/28518 , H01L21/76889 , H01L23/485 , H01L2924/0002 , Y10S438/908
摘要： Described is an improved polysilicon/tungsten silicide (WSi.sub.x) composite layer formed over an integrated circuit structure on a semiconductor wafer and characterized by improved step coverage and non tungsten-rich tungsten:silicon ratio of the WSi.sub.x layer, and a method of forming same. A doped layer of polysilicon is formed in a first deposition chamber over an integrated circuit structure previously formed on a semiconductor substrate and a capping layer of undoped polysilicon is then deposited in the first deposition chamber over the doped polysilicon layer. The substrate is then transferred from the first deposition chamber into a second deposition chamber without exposing the surface of the polysilicon layer to an oxidizing media. The desired tungsten silicide layer is then formed in the second deposition chamber onto undoped polysilicon capping layer, using a gaseous source of tungsten such as WF6, and dichlorosilane (DCS) as the source of silicon, without the formation of the undesirable tungsten-rich tungsten silicide layer characteristic of the prior art. The undoped polysilicon capping layer may then be doped, after the formation of the tungsten silicide layer, by subsequently heating the structure sufficiently to cause the dopant in the doped polysilicon layer to migrate into the undoped polysilicon layer thereon. Such heating may be carried out in a separate annealing step, but preferably is carried out in situ as a part of the subsequent processing of the integrated circuit structure being formed on the substrate.
摘要翻译：描述了在半导体晶片上的集成电路结构上形成的改进的多晶硅/硅化钨（WSix）复合层，其特征在于WSix层的阶跃覆盖率和非钨的钨：硅比率的改善及其形成方法。在先前形成在半导体衬底上的集成电路结构上的第一沉积室中形成掺杂多晶硅层，然后在掺杂多晶硅层上的第一沉积室中沉积未掺杂多晶硅覆盖层。然后将衬底从第一沉积室转移到第二沉积室中，而不将多晶硅层的表面暴露于氧化介质。然后将所需的硅化钨层在第二沉积室中形成于未掺杂多晶硅覆盖层上，使用诸如WF 6的钨的气态源和二氯硅烷（DCS）作为硅源，而不形成不期望的富钨钨现有技术的硅化物层特征。然后可以在形成硅化钨层之后通过随后加热该结构以使掺杂多晶硅层中的掺杂剂迁移到其中未掺杂的多晶硅层中来掺杂未掺杂的多晶硅覆盖层。这种加热可以在单独的退火步骤中进行，但是优选地作为在衬底上形成的集成电路结构的后续处理的一部分就地进行。

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