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1. 发明授权

US6125859A Method for improved cleaning of substrate processing systems 失效
标题翻译：改善基材处理系统清洗的方法
公开(公告)号：US6125859A
公开(公告)日：2000-10-03
申请号：US893922
申请日：1997-07-11
申请人： Chien-Teh Kao , Karl Anthony Littau , Anand Vasudev , Dong Won Koo
发明人： Chien-Teh Kao , Karl Anthony Littau , Anand Vasudev , Dong Won Koo
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , C23C16/511 , C23C16/52 , H01J9/38 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/00
CPC分类号： H01J37/32862 , C23C16/511 , C23C16/52 , H01J37/32192 , H01J37/32357 , H01J9/38 , Y10S156/916 , Y10S438/905
摘要： A method for a multiple-stage microwave plasma cleaning technique for efficiently cleaning a substrate processing chamber. In a specific embodiment, a two-stage cleaning process is described. The first stage begins by flowing a reactive gas from a gas source into a processing chamber where microwaves ignite and maintain a plasma from the reactive gas. Reactive radicals generated which react with residues on the interior surfaces of the processing chamber. In the second stage, an inert gas is flowed into the processing chamber in addition to the reactive gas. Microwaves then ignite and maintain a plasma from the reactive gas and optionally, the inert gas as well. Optionally, an inert gas can be flowed into the processing chamber prior to the first stage to remove loose particles from the processing chamber. The reactive gas in such embodiments is preferably NF.sub.3, but other fluorine-containing gases such as carbon tetrafluoride (CF.sub.4) or sulfur hexafluoride (SF.sub.6) may also be used. Moreover, chlorine- or other halogen-containing gases may also be used as the reactive gas in other embodiments in place of fluorine-containing gases.
摘要翻译：一种用于高效清洗基板处理室的多级微波等离子体清洗技术的方法。在具体实施例中，描述了两阶段清洁过程。第一阶段开始于将反应气体从气体源流入处理室，其中微波点燃并维持来自反应气体的等离子体。所产生的反应性基团与处理室内表面上的残留物反应。在第二阶段中，除了反应性气体之外，惰性气体也流入处理室。微波然后点燃和维持来自反应气体的等离子体以及任选的惰性气体。任选地，惰性气体可以在第一阶段之前流入处理室以从处理室去除松散的颗粒。在这些实施方案中，反应性气体优选为NF 3，但也可以使用其它含氟气体如四氟化碳（CF 4）或六氟化硫（SF 6）。此外，在其它实施方案中，也可以使用氯或其它含卤素的气体作为反应气体来代替含氟气体。

2. 发明授权

US06242347B1 Method for cleaning a process chamber 有权
标题翻译：清洁处理室的方法
公开(公告)号：US06242347B1
公开(公告)日：2001-06-05
申请号：US09163711
申请日：1998-09-30
申请人： Anand Vasudev , Toshio Itoh , Ramanujapuram A. Srinivas , Frederick Wu , Li Wu , Brian Boyle , Mei Chang
发明人： Anand Vasudev , Toshio Itoh , Ramanujapuram A. Srinivas , Frederick Wu , Li Wu , Brian Boyle , Mei Chang
IPC分类号： H01L2144
CPC分类号： H01L21/67028 , Y10S438/905 , Y10S438/906
摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.
摘要翻译：一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空在引入下一个晶圆之前。晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。在一个优选实施例中，在利用该腔室以沉积这种材料之前，在室的内表面上沉积薄的钛保护膜。在每次两级清洁之后补充保护层。

3. 发明授权

US08075789B1 Remote plasma cleaning source having reduced reactivity with a substrate processing chamber 失效
标题翻译：远程等离子体清洁源具有降低的与基板处理室的反应性
公开(公告)号：US08075789B1
公开(公告)日：2011-12-13
申请号：US08893917
申请日：1997-07-11
申请人： Karl A. Littau , Chiliang L. Chen , Anand Vasudev
发明人： Karl A. Littau , Chiliang L. Chen , Anand Vasudev
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00 , B44C1/22 , C03C15/00 , C03C25/68 , C23F3/00
CPC分类号： H01J37/32862 , C23C16/4405 , C23C16/452
摘要： A method and apparatus for cleaning a chamber in a substrate processing system having less reactivity with the chamber walls and the components contained therein. The method includes mixing a diluent gas with a flow of radicals produced by a plasma remotely disposed with respect to the chamber, at a point located between a plasma applicator and the chamber. The apparatus includes a fluid manifold having multiple inlets and an outlet with the outlet being coupled to an intake port of the chamber. One of the inlets are in fluid communication with the plasma applicator, with the remaining inlets being in fluid communication with a supply of the diluent gas. In this fashion, the diluent gas flow and the flow of reactive radicals mix when traveling between the inlets and the outlet to form a gas-radical mixture egressing from the outlet and traversing through the intake port.
摘要翻译：一种用于清洁基板处理系统中的室的方法和装置，其具有对室壁及其中所含的部件的反应性较小。该方法包括在位于等离子体施加器和腔室之间的点处将稀释气体与由相对于腔室远程设置的等离子体产生的自由基流混合。该装置包括具有多个入口的流体歧管和具有出口连接到腔室的进气口的出口。一个入口与等离子体施加器流体连通，其余入口与稀释气体的供应流体连通。以这种方式，当在入口和出口之间行进时，稀释气体流和反应性自由基的流动混合以形成从出口排出并穿过进气口的气 - 自由基混合物。

4. 发明授权

US08183132B2 Methods for fabricating group III nitride structures with a cluster tool 有权
标题翻译：使用簇工具制备III族氮化物结构的方法
公开(公告)号：US08183132B2
公开(公告)日：2012-05-22
申请号：US12751692
申请日：2010-03-31
申请人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

5. 发明授权

US06482746B2 Computer readable medium for controlling a method of cleaning a process chamber 有权
标题翻译：用于控制清洁处理室的方法的计算机可读介质
公开(公告)号：US06482746B2
公开(公告)日：2002-11-19
申请号：US09874882
申请日：2001-06-05
申请人： Anand Vasudev , Toshio Itoh , Ramamujapuram A. Srinivas , Frederick Wu , Li Wu , Brian Boyle , Mei Chang
发明人： Anand Vasudev , Toshio Itoh , Ramamujapuram A. Srinivas , Frederick Wu , Li Wu , Brian Boyle , Mei Chang
IPC分类号： H01L21302
CPC分类号： H01L21/67028 , Y10S438/905 , Y10S438/906
摘要： A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.
摘要翻译：一种半导体沉积室的原位清洗方法，用于沉积诸如钛或氮化钛的半导体材料，包括在晶片之间，在升高的温度下将氯气引入室中，用惰性气体吹扫室，并排空在引入下一个晶圆之前。晶片清洗过程之间的两阶段是通过在升高的温度下将氯引入室中，之后启动等离子体而不去除氯，用惰性气体吹扫室并在引入下一个晶片之前对其进行排空。在一个优选实施例中，在使用该室以沉积这种材料之前，将薄的钛保护膜沉积在室的内侧。在每次两级清洁之后补充保护层。

6. 发明申请

US20100261340A1 CLUSTER TOOL FOR LEDS 有权
标题翻译： LED集群工具
公开(公告)号：US20100261340A1
公开(公告)日：2010-10-14
申请号：US12751692
申请日：2010-03-31
申请人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/205
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

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