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1. 发明授权

US5558910A Uniform tungsten silicide films produced by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造的均匀的硅化钨膜
公开(公告)号：US5558910A
公开(公告)日：1996-09-24
申请号：US477836
申请日：1995-06-07
申请人： Susan G. Telford , Meng C. Tseng , Michio Aruga , Moshe Eizenberg
发明人： Susan G. Telford , Meng C. Tseng , Michio Aruga , Moshe Eizenberg
IPC分类号： C23C16/42 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/42 , C23C16/4405 , C23C16/45512 , C23C16/45561 , Y10S148/019 , Y10S148/027
摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
摘要翻译：从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。可以在工艺气体中加入接种气体。

2. 发明授权

US06193813B1 Utilization of SiH4 soak and purge in deposition processes 失效
标题翻译：在沉积过程中利用SiH4浸泡和吹扫
公开(公告)号：US06193813B1
公开(公告)日：2001-02-27
申请号：US09162336
申请日：1998-09-28
申请人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
发明人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
IPC分类号： C23C1600
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH4 into the chamber. Preferably, WSix is deposited on a semiconductor wafer using a mixture comprising WF6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF6 and dichlorosilane by flowing SiH4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus for practicing methods of the invention includes a chamber, means for depositing a material, such as WSix, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过将SiH 4流入室中来清除残余的WF6和二氯硅烷。另外在真空处理中处理衬底的方法腔室包括通过在将衬底沉积到衬底表面之前将SiH 4流入室中来调节室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和降低的膜应力。真空处理本发明的实施方法的装置包括：室，用于在诸如WSix之间沉积材料的装置，在设置在室内的基板的表面上，以及用于用SiH 4吹扫室的装置。

3. 发明授权

US06410460B1 Technology for thermodynamically stable contacts for binary wide band gap semiconductors 失效
标题翻译：二元宽带隙半导体的热力学稳定接触技术
公开(公告)号：US06410460B1
公开(公告)日：2002-06-25
申请号：US09570812
申请日：2000-05-15
申请人： Ilan Shalish , Yoram Shapira , Moshe Eizenberg
发明人： Ilan Shalish , Yoram Shapira , Moshe Eizenberg
IPC分类号： H01L2131
CPC分类号： H01L29/47 , H01L21/048 , H01L21/0485 , H01L21/0495 , H01L21/28575 , H01L21/28581 , H01L29/1608 , H01L29/20 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/475
摘要： A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
摘要翻译：用于二元氧化物，氮化物，碳化物或磷化物半导体的热力学稳定的金属接触及其制备方法在与二元半导体衬底的金属双层的真空中的高温反应中形成接触。通过适当选择两个金属层，每个金属形成仅具有二进制半导体元件中的一个的单相。所得相在热力学稳定的序列中形成不同的层。

4. 发明授权

US4980751A Electrical multilayer contact for microelectronic structure 失效
标题翻译：微电子结构的电气多层接触
公开(公告)号：US4980751A
公开(公告)日：1990-12-25
申请号：US383224
申请日：1989-07-19
申请人： Moshe Eizenberg , King-Ning Tu
发明人： Moshe Eizenberg , King-Ning Tu
IPC分类号： H01L23/532 , H01L29/45
CPC分类号： H01L29/456 , H01L23/53223 , H01L24/05 , H01L2924/01322 , H01L2924/12032 , H01L2924/14
摘要： An electrical contact between two film members that is stable over all conditions encountered in processing and over the device lifetime. The contact has a central multi-element diffusion barrier alloy layer having at least one elemental ingredient that does not react with either film member and at least one other elemental ingredient that reacts with the adjacent film member to form an intermediate layer between the diffusion barrier layer and each film member. A contact between aluminum wiring and silicon devices on an integrated circuit chip is provided with a diffusion barrier layer of for example, WPd with an intermediate layer on both sides, one side being PdSi next to the silicon and the other being AlPd.sub.3 next to the aluminum.
摘要翻译：两个膜构件之间的电接触在处理中遇到的所有条件下以及器件寿命都是稳定的。接触件具有中心多元件扩散阻挡合金层，其具有至少一种元素成分，其不与膜构件和至少一种其它元素成分反应，所述至少一种元素成分与相邻的膜构件反应以在扩散阻挡层和每个电影成员。在集成电路芯片上的铝布线和硅器件之间的接触件设置有例如WPd的扩散阻挡层，WPd的两侧具有中间层，一侧为硅的旁边的PdSi，而另一侧为与铝相邻的AlPd3 。

5. 发明授权

US5817576A Utilization of SiH.sub.4 soak and purge in deposition processes 失效
标题翻译：在沉积过程中利用SiH4浸泡和吹扫
公开(公告)号：US5817576A
公开(公告)日：1998-10-06
申请号：US743929
申请日：1996-11-05
申请人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
发明人： Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Telford
IPC分类号： C23C16/44 , C23C16/02 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过使SiH 4流入室中来清洗残留的WF 6和二氯硅烷。在真空处理室中处理衬底的另一种方法包括通过在将衬底沉积在衬底的表面上之前将SiH 4流入腔室来调节腔室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和薄膜应力减小。还提供了用于本发明的实施方法的真空处理装置，并且包括室，用于在布置在室内的基板的表面上沉积诸如WSix的材料的装置以及用SiH 4吹扫室的装置。

6. 发明授权

US5780360A Purge in silicide deposition processes dichlorosilane 失效
标题翻译：二氯硅烷在硅化物沉积工艺中的清洗
公开(公告)号：US5780360A
公开(公告)日：1998-07-14
申请号：US666976
申请日：1996-06-20
申请人： Jennifer Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Weihar Telford
发明人： Jennifer Meng Chu Tseng , Mei Chang , Ramanujapuram A. Srinivas , Klaus-Dieter Rinnen , Moshe Eizenberg , Susan Weihar Telford
IPC分类号： C23C16/44 , C23C16/02 , C23C16/42 , C23C16/56 , H01L21/205 , H01L21/28 , H01L21/285
CPC分类号： C23C16/4408 , C23C16/0218 , C23C16/42 , C23C16/56 , H01L21/28518 , Y10S438/905
摘要： A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.
摘要翻译：在真空处理室中处理诸如半导体晶片的衬底的方法包括以下步骤：使用气体混合物将材料沉积在衬底的表面上，并且通过使SiH 4流入腔室来清洗残留气体室。优选地，使用包含WF 6，二氯硅烷和惰性气体的混合物将WSix沉积在半导体晶片上，随后通过使SiH 4流入室中来清洗残留的WF 6和二氯硅烷。在真空处理室中处理衬底的另一种方法包括通过在将衬底沉积在衬底的表面上之前将SiH 4流入腔室来调节腔室的步骤。根据本发明方法处理的半导体晶片的特征在于更均匀的薄层电阻值和薄膜应力减小。还提供了用于本发明的实施方法的真空处理装置，并且包括室，用于在布置在室内的基板的表面上沉积诸如WSix的材料的装置以及用SiH 4吹扫室的装置。

7. 发明授权

US5643633A Uniform tungsten silicide films produced by chemical vapor depostiton 失效
标题翻译：通过化学气相沉积法生产的均匀的硅化钨膜
公开(公告)号：US5643633A
公开(公告)日：1997-07-01
申请号：US485925
申请日：1995-06-07
申请人： Susan G. Telford , Meng Chu Tseng , Michio Aruga , Moshe Eizenberg
发明人： Susan G. Telford , Meng Chu Tseng , Michio Aruga , Moshe Eizenberg
IPC分类号： C23C16/42 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/42 , C23C16/4405 , C23C16/45512 , C23C16/45561 , Y10S148/019 , Y10S148/027
摘要： A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
摘要翻译：从WF 6和SiCl 2 H 2将硅化钨膜沉积到基板上，使得通过WSix膜的厚度，钨与硅的比例基本上是均匀的，并且WSix膜基本上不含氟。可以通过腔室中的压力变化的多阶段过程或通过等离子体清洁的沉积室中的高温高压沉积工艺来沉积膜。优选地，SiCl 2 H 2和WF 6混合在沉积室的上游。可以在工艺气体中加入接种气体。

8. 发明授权

US4502209A Forming low-resistance contact to silicon 失效
标题翻译：与硅形成低电阻接触
公开(公告)号：US4502209A
公开(公告)日：1985-03-05
申请号：US528074
申请日：1983-08-31
申请人： Moshe Eizenberg , Shyam P. Murarka
发明人： Moshe Eizenberg , Shyam P. Murarka
IPC分类号： H01L29/78 , H01L21/28 , H01L21/285 , H01L21/768 , H01L23/532 , H01L29/45 , H01L23/48
CPC分类号： H01L21/76843 , H01L21/28518 , H01L23/53223 , H01L29/456 , H01L2924/0002
摘要： Annealing a titanium-rich carbide film deposited on silicon produces, in a single processing step, both a stable titanium silicide contact and a titanium carbide diffusion barrier between the silicide and a subsequently formed overlying layer of aluminum. Reliable low-resistance contacts to VLSI devices are thereby provided in a cost-effective fabrication sequence.Other metallization systems, comprising a silicide and a diffusion barrier to aluminum formed in a single processing step, are also described.
摘要翻译：退火沉积在硅上的富含钛的碳化物膜在单个处理步骤中产生在硅化物和随后形成的铝覆盖层之间的稳定的硅化钛接触和碳化钛扩散阻挡层。因此，以成本有效的制造顺序提供了对VLSI器件的可靠的低电阻触点。还描述了在单个处理步骤中形成的包括硅化物和对铝的扩散阻挡层的其它金属化系统。

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