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1. 发明申请

US20110303635A1 DRY ETCHING APPARATUS AND METHOD OF DRY ETCHING 审中-公开
标题翻译：干蚀刻设备和干蚀刻方法
公开(公告)号：US20110303635A1
公开(公告)日：2011-12-15
申请号：US13157470
申请日：2011-06-10
申请人： Shuji TAKAHASHI
发明人： Shuji TAKAHASHI
IPC分类号： H01L41/24 , C23F1/08
CPC分类号： H01J37/32972 , H01J37/32082 , H01J37/32165 , H01J37/32174 , H01J37/32183 , H01J37/3299
摘要： A dry etching apparatus includes: a vacuum chamber which includes therein a stage on which a member to be etched is mounted; a process gas supply device which supplies a process gas into the vacuum chamber; a plasma generating device which includes an electrode for generating a plasma in the vacuum chamber; a plasma generating power source which supplies high-frequency power for plasma generation to the electrode of the plasma generating device; a bias power source which is a single bias power source for controlling a self-bias potential of the stage and from which output frequency is variable; a matching box which is a single matching box connected electrically between the stage and the bias power source and which matches impedances between a load of the bias power source and the bias power source; a frequency setting device which sets an output frequency of the bias power source; and a control device which controls an impedance of the matching box according to the set output frequency of the bias power source.
摘要翻译：干蚀刻装置包括：真空室，其中包括安装待蚀刻部件的台阶; 处理气体供给装置，其将处理气体供给到真空室中; 等离子体产生装置，其包括用于在真空室中产生等离子体的电极; 等离子体发生电源，其将等离子体产生的高频电力提供给等离子体发生装置的电极; 偏置电源，其是用于控制级的自偏置电位并且输出频率可变的单个偏置电源; 匹配箱，其是在所述级和所述偏置电源之间电连接并匹配所述偏置电源的负载与所述偏置电源之间的阻抗的单个匹配盒; 频率设定装置，其设定偏置电源的输出频率; 以及控制装置，其根据偏置电源的设定输出频率来控制匹配盒的阻抗。

2. 发明申请

US20110250763A1 PLASMA OXIDATION METHOD AND PLASMA OXIDATION APPARATUS 有权
标题翻译：等离子体氧化方法和等离子体氧化装置
公开(公告)号：US20110250763A1
公开(公告)日：2011-10-13
申请号：US13085215
申请日：2011-04-12
申请人： Shuji TAKAHASHI , Haruo SHINDO
发明人： Shuji TAKAHASHI , Haruo SHINDO
IPC分类号： H01L21/316 , C23C16/50
CPC分类号： H01L21/02164 , H01L21/02238
摘要： A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin
摘要翻译：等离子体氧化法包括以下步骤：用含有氧气的工艺气体产生含氧等离子体; 对放置在台架上的基板施加偏置电压; 并且将含氧等离子体中的正离子和负离子放射到衬底上，以便在以如下方式控制衬底的等离子体氧化的同时控制衬底的偏置电位：偏压的最大值Vmax和最小值Vmin 电位和等离子体电位Vp满足以下关系：Vmin

3. 发明申请

US20090301998A1 METHOD OF FORMING NOZZLE HOLE AND METHOD OF MANUFACTURING INKJET RECORDING HEAD 审中-公开
标题翻译：形成喷嘴孔的方法和制造喷墨记录头的方法
公开(公告)号：US20090301998A1
公开(公告)日：2009-12-10
申请号：US12478134
申请日：2009-06-04
申请人： Hiroki UCHIYAMA , Shuji TAKAHASHI , Shinya SUGIMOTO
发明人： Hiroki UCHIYAMA , Shuji TAKAHASHI , Shinya SUGIMOTO
IPC分类号： B44C1/22
CPC分类号： B41J2/162 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1646
摘要： A first substrate 10 having a channel 12 which passes through the inside thereof and an opening 14a or 14b of the channel which is formed on at least one side thereof, and a second substrate 20 for forming a nozzle hole communicating with the channel are prepared. The second substrate is bonded to the one side of the first substrate where the channel opening 14b is formed so that the opening is blocked by the second substrate. The second substrate is etched with a mixed etching fluid, which contains a high-pressure fluid and an etching solution, fed thereto via the channel of the first substrate, thereby forming the nozzle hole 22 communicating with the channel.
摘要翻译：准备具有通过其内部的通道12和形成在其至少一侧上的通道的开口14a或14b的第一基板10和用于形成与通道连通的喷嘴孔的第二基板20。第二基板被结合到第一基板的形成有通道开口14b的一侧，使得开口被第二基板阻挡。用混合蚀刻流体蚀刻第二衬底，该混合蚀刻流体包含通过第一衬底的沟道馈送到其中的高压流体和蚀刻溶液，从而形成与沟道连通的喷嘴孔22。

4. 发明申请

US20090236933A1 PIEZOELECTRIC DEVICE AND METHOD OF PRODUCTION THEREOF 有权
标题翻译：压电元件及其制造方法
公开(公告)号：US20090236933A1
公开(公告)日：2009-09-24
申请号：US12405714
申请日：2009-03-17
申请人： Shuji TAKAHASHI , Fumihiko MOCHIZUKI
发明人： Shuji TAKAHASHI , Fumihiko MOCHIZUKI
IPC分类号： H01L41/053
CPC分类号： H01L41/332 , H01L41/0477 , H01L41/0533 , H01L41/0805 , H01L41/23 , Y10T29/42
摘要： A piezoelectric device includes a lower electrode, a piezoelectric film and an upper electrode laminated in this order on a support. An oxide film containing a material that forms a lower electrode is formed on a side surface of the piezoelectric film. The piezoelectric device is produced such that an upper electrode and a piezoelectric film are patterned by dry-etching through a mask formed on a side of the upper electrode of the piezoelectric device member and thereafter a side surface of the patterned piezoelectric film (a film adhered to a side wall) is oxidized to form an oxide film.
摘要翻译：压电装置包括依次层叠在支撑体上的下电极，压电膜和上电极。包含形成下电极的材料的氧化物膜形成在压电膜的侧表面上。制造压电器件，使得通过干法蚀刻来形成上电极和压电膜，通过形成在压电器件元件的上电极一侧的掩模，然后将图案化的压电膜的侧表面到侧壁）被氧化以形成氧化膜。

5. 发明申请

US20120007920A1 METHOD OF MANUFACTURING NOZZLE PLATE, LIQUID EJECTION HEAD AND IMAGE FORMING APPARATUS 有权
标题翻译：制造喷嘴板，液体喷射头和成像装置的方法
公开(公告)号：US20120007920A1
公开(公告)日：2012-01-12
申请号：US13238802
申请日：2011-09-21
申请人： Shuji TAKAHASHI
发明人： Shuji TAKAHASHI
IPC分类号： B41J2/14 , B05B1/00 , C23F1/02
CPC分类号： B41J2/162 , B41J2/14233 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2002/14241 , B41J2002/14459
摘要： The method of manufacturing a nozzle plate which includes a nozzle having a tapered section and a linear section includes the steps of: forming an etching stopper layer for stopping dry etching of a silicon substrate, on a first surface of the silicon substrate; forming a mask layer on a second surface of the silicon substrate reverse to the first surface; performing a first patterning process with respect to the mask layer so that an opening section is formed in the mask layer; carrying out the dry etching of the silicon substrate through the opening section in the mask layer so that the tapered section of the nozzle is formed in the silicon substrate; carrying out dry etching of the etching stopper layer through the opening section in the mask layer so that at least a part of the linear section of the nozzle is formed in the etching stopper layer; and removing the mask layer.
摘要翻译：制造包括具有锥形部分和直线部分的喷嘴的喷嘴板的方法包括以下步骤：在硅衬底的第一表面上形成用于停止硅衬底的干蚀刻的蚀刻停止层; 在所述硅衬底的与所述第一表面相反的第二表面上形成掩模层; 对掩模层进行第一图案化处理，使得在掩模层中形成开口部; 通过掩模层中的开口部进行硅衬底的干蚀刻，使得在硅衬底中形成喷嘴的锥形部分; 通过掩模层中的开口部进行蚀刻停止层的干蚀刻，使得在蚀刻停止层中形成喷嘴的直线部分的至少一部分; 并去除掩模层。

6. 发明申请

US20110247995A1 DRY ETCHING METHOD AND DRY ETCHING APPARATUS 审中-公开
标题翻译：干蚀刻方法和干蚀刻装置
公开(公告)号：US20110247995A1
公开(公告)日：2011-10-13
申请号：US13084854
申请日：2011-04-12
申请人： Shuji TAKAHASHI , Haruo SHINDO
发明人： Shuji TAKAHASHI , Haruo SHINDO
IPC分类号： C23F1/00 , C23F1/08 , H05H1/24
CPC分类号： H01L21/31122 , H01J37/32082 , H01J37/32532
摘要： A dry etching method includes the steps of: supplying process gas to an interior of a vacuum vessel and supplying high-frequency power for plasma generation to an electrode of a plasma generation unit disposed in the vacuum vessel so as to generate plasma; and applying a high-frequency bias voltage to a substrate which is a member to be etched so as to carry out etching of the substrate, wherein the etching is carried out while applying the high-frequency bias voltage in which a self-bias voltage Vdc of a substrate bias voltage is not less than 0 Volts, by adopting a composition using a high-frequency power source for bias which is transformer-coupled to the substrate and a direct current power source for bias which is connected in series to a secondary side of a transformer so as to apply the substrate bias voltage in which a high-frequency voltage and a direct current voltage are superimposed, to the substrate from these power sources via the transformer.
摘要翻译：干蚀刻方法包括以下步骤：向真空容器的内部供应处理气体，并将等离子体产生的高频电力提供给设置在真空容器中的等离子体发生单元的电极，以产生等离子体; 以及将高频偏置电压施加到要被蚀刻的部件的基板上以进行所述基板的蚀刻，其中，在施加其中自偏压Vdc的高频偏置电压的同时进行蚀刻衬底偏置电压不低于0伏，通过采用使用高频电源的组合物，该组合物用于与衬底变压耦合的偏压，以及用于与二次侧串联连接的用于偏压的直流电源的变压器，以便通过变压器将来自这些电源的叠加有高频电压和直流电压的衬底偏置电压施加到衬底。

7. 发明申请

US20090223931A1 DRY ETCHING METHOD AND APPARATUS 审中-公开
标题翻译：干蚀刻方法和装置
公开(公告)号：US20090223931A1
公开(公告)日：2009-09-10
申请号：US12396911
申请日：2009-03-03
申请人： Shuji TAKAHASHI
发明人： Shuji TAKAHASHI
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32706 , H01L41/332
摘要： The dry etching method of performing etching, includes the steps of: supplying a processing gas which is a gas mixture of a plurality of fluorochemical gases; and generating plasma under a high vacuum while supplying the processing gas and applying a low-frequency bias voltage.
摘要翻译：进行蚀刻的干蚀刻方法包括以下步骤：供给作为多种含氟气体的气体混合物的处理气体; 以及在高真空下产生等离子体，同时供应处理气体并施加低频偏置电压。

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