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1. 发明授权

US08628174B2 Piezoelectric element, method of manufacturing the same, and ink jet head 有权
标题翻译：压电元件，其制造方法和喷墨头
公开(公告)号：US08628174B2
公开(公告)日：2014-01-14
申请号：US12717816
申请日：2010-03-04
申请人： Shuji Takahashi
发明人： Shuji Takahashi
IPC分类号： B41J2/045 , H01L41/00 , H02N2/00
CPC分类号： B41J2/1628 , B41J2/161 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , H01L41/0973 , H01L41/316 , H01L41/332
摘要： A piezoelectric element 10 includes a supporting body 12, a lower electrode 16 that is formed over the supporting body, a piezoelectric layer 20 that is formed over the lower electrode, and an upper electrode 24 that is formed over the piezoelectric layer so as to oppose the lower electrode via the piezoelectric layer. A step portion 20A is formed at a peripheral portion of the piezoelectric layer at a side of the lower electrode such that a surface of the piezoelectric layer at the side of the lower electrode is larger than a surface of the piezoelectric layer at a side of the upper electrode.
摘要翻译：压电元件10包括支撑体12，形成在支撑体上的下电极16，形成在下电极上的压电层20和形成在压电层上方的上电极24，下电极通过压电层。台阶部分20A形成在压电层的下电极一侧的周边部分处，使得压电层在下电极侧的表面大于压电层侧面的压电层的表面上电极。

2. 发明申请

US20130098888A1 METHOD FOR HEAT-TREATING WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS 审中-公开
标题翻译：用于加热处理的方法，用于生产硅波的方法，硅波和热处理装置
公开(公告)号：US20130098888A1
公开(公告)日：2013-04-25
申请号：US13807243
申请日：2011-07-15
申请人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
发明人： Koji Ebara , Tetsuya Oka , Shuji Takahashi
IPC分类号： H05B1/00
CPC分类号： H05B1/00 , C30B29/06 , C30B33/02 , H01L21/324 , H01L21/67115
摘要： The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.
摘要翻译：本发明是一种对晶片进行热处理的方法，其特征在于，通过在主表面（第一晶片的主表面）由支撑构件支撑，其中通过控制加热源进行热处理的方法是这样一种方式，使得由支撑构件支撑的第一主表面的温度变为1至25 高于与晶片的第一主表面相对的主表面（第二主表面）的温度。结果，提供了一种用于对晶片进行热处理的方法，当对硅晶片进行热处理时，可以可靠地抑制从晶片支撑位置产生的滑移位错的方法。

3. 发明申请

US20120008915A1 VIDEO DATA RECORDING DEVICE, VIDEO DATA PLAYING DEVICE, VIDEO DATA RECORDING METHOD, AND VIDEO DATA PLAYING METHOD 有权
标题翻译：视频数据记录装置，视频数据播放装置，视频数据记录方法和视频数据播放方法
公开(公告)号：US20120008915A1
公开(公告)日：2012-01-12
申请号：US13001554
申请日：2010-03-18
申请人： Shuji Takahashi , Yasuhiro Ueki
发明人： Shuji Takahashi , Yasuhiro Ueki
IPC分类号： H04N5/91 , G06K9/62
CPC分类号： H04N5/91 , G06K9/00248 , G11B27/034 , G11B27/28 , H04N5/232 , H04N5/23219 , H04N5/772 , H04N5/85 , H04N9/8205
摘要： A video data recording device for sufficiently protecting privacy even before a mask target enters into a screen. The video data recording device includes a reference information storage unit in which reference information including predetermined features is recorded; a video data acquisition unit which acquires video data and sequentially outputs the video data to a video buffer; a similarity determining unit which compares newest video data and the reference information, and extracts partial information determined to be similar to the reference information from the newest video data; a relation determining unit which compares video data output to the video buffer before the newest video data, and the partial information determined to be similar, and extracts partial information determined to be related to the partial information determined to be similar; and an imaging recording I/F unit which records the video data and the related information related to the partial information in a recording medium.
摘要翻译：一种视频数据记录装置，即使在掩模目标进入屏幕之前也能充分保护隐私。视频数据记录装置包括参考信息存储单元，其中记录了包括预定特征的参考信息; 视频数据获取单元，其获取视频数据并将视频数据顺序地输出到视频缓冲器; 相似度确定单元，对最新的视频数据和参考信息进行比较，并从最新的视频数据中提取确定为与参考信息相似的部分信息; 关系确定单元，将在最新视频数据之前的视频缓冲器输出的视频数据与确定为相似的部分信息进行比较，并且提取被确定为与被确定为相似的部分信息相关的部分信息; 以及成像记录I / F单元，其将视频数据和与部分信息相关的相关信息记录在记录介质中。

4. 发明申请

US20120007920A1 METHOD OF MANUFACTURING NOZZLE PLATE, LIQUID EJECTION HEAD AND IMAGE FORMING APPARATUS 有权
标题翻译：制造喷嘴板，液体喷射头和成像装置的方法
公开(公告)号：US20120007920A1
公开(公告)日：2012-01-12
申请号：US13238802
申请日：2011-09-21
申请人： Shuji TAKAHASHI
发明人： Shuji TAKAHASHI
IPC分类号： B41J2/14 , B05B1/00 , C23F1/02
CPC分类号： B41J2/162 , B41J2/14233 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2002/14241 , B41J2002/14459
摘要： The method of manufacturing a nozzle plate which includes a nozzle having a tapered section and a linear section includes the steps of: forming an etching stopper layer for stopping dry etching of a silicon substrate, on a first surface of the silicon substrate; forming a mask layer on a second surface of the silicon substrate reverse to the first surface; performing a first patterning process with respect to the mask layer so that an opening section is formed in the mask layer; carrying out the dry etching of the silicon substrate through the opening section in the mask layer so that the tapered section of the nozzle is formed in the silicon substrate; carrying out dry etching of the etching stopper layer through the opening section in the mask layer so that at least a part of the linear section of the nozzle is formed in the etching stopper layer; and removing the mask layer.
摘要翻译：制造包括具有锥形部分和直线部分的喷嘴的喷嘴板的方法包括以下步骤：在硅衬底的第一表面上形成用于停止硅衬底的干蚀刻的蚀刻停止层; 在所述硅衬底的与所述第一表面相反的第二表面上形成掩模层; 对掩模层进行第一图案化处理，使得在掩模层中形成开口部; 通过掩模层中的开口部进行硅衬底的干蚀刻，使得在硅衬底中形成喷嘴的锥形部分; 通过掩模层中的开口部进行蚀刻停止层的干蚀刻，使得在蚀刻停止层中形成喷嘴的直线部分的至少一部分; 并去除掩模层。

5. 发明申请

US20110247995A1 DRY ETCHING METHOD AND DRY ETCHING APPARATUS 审中-公开
标题翻译：干蚀刻方法和干蚀刻装置
公开(公告)号：US20110247995A1
公开(公告)日：2011-10-13
申请号：US13084854
申请日：2011-04-12
申请人： Shuji TAKAHASHI , Haruo SHINDO
发明人： Shuji TAKAHASHI , Haruo SHINDO
IPC分类号： C23F1/00 , C23F1/08 , H05H1/24
CPC分类号： H01L21/31122 , H01J37/32082 , H01J37/32532
摘要： A dry etching method includes the steps of: supplying process gas to an interior of a vacuum vessel and supplying high-frequency power for plasma generation to an electrode of a plasma generation unit disposed in the vacuum vessel so as to generate plasma; and applying a high-frequency bias voltage to a substrate which is a member to be etched so as to carry out etching of the substrate, wherein the etching is carried out while applying the high-frequency bias voltage in which a self-bias voltage Vdc of a substrate bias voltage is not less than 0 Volts, by adopting a composition using a high-frequency power source for bias which is transformer-coupled to the substrate and a direct current power source for bias which is connected in series to a secondary side of a transformer so as to apply the substrate bias voltage in which a high-frequency voltage and a direct current voltage are superimposed, to the substrate from these power sources via the transformer.
摘要翻译：干蚀刻方法包括以下步骤：向真空容器的内部供应处理气体，并将等离子体产生的高频电力提供给设置在真空容器中的等离子体发生单元的电极，以产生等离子体; 以及将高频偏置电压施加到要被蚀刻的部件的基板上以进行所述基板的蚀刻，其中，在施加其中自偏压Vdc的高频偏置电压的同时进行蚀刻衬底偏置电压不低于0伏，通过采用使用高频电源的组合物，该组合物用于与衬底变压耦合的偏压，以及用于与二次侧串联连接的用于偏压的直流电源的变压器，以便通过变压器将来自这些电源的叠加有高频电压和直流电压的衬底偏置电压施加到衬底。

6. 发明授权

US07854494B2 Nozzle plate, method of manufacturing nozzle plate, and image forming apparatus 有权
标题翻译：喷嘴板，喷嘴板的制造方法以及成像装置
公开(公告)号：US07854494B2
公开(公告)日：2010-12-21
申请号：US12023984
申请日：2008-01-31
申请人： Shuji Takahashi
发明人： Shuji Takahashi
IPC分类号： B41J2/14
CPC分类号： B41J2/1433 , B41J2/1606 , B41J2/162 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2/1645
摘要： The nozzle plate has a nozzle hole formed therethrough, the nozzle hole being defined in the nozzle plate with an inner surface including a first liquid-philic portion, a liquid-phobic portion and a second liquid-philic portion that are arranged in this order from a side near the nozzle mouth, the first and second liquid-philic portions having liquid-philicity, the liquid-phobic portion having liquid-phoblicity.
摘要翻译：喷嘴板具有贯穿其上形成的喷嘴孔，喷嘴孔限定在喷嘴板中，其内表面包括第一液体亲水部分，液体疏液部分和第二液体亲水部分，在喷嘴口附近的一侧，第一和第二液体亲液部分具有液体亲和性，该液体疏液部分具有液体光阑。

7. 发明申请

US20100216260A1 PLASMA ETCHING METHOD AND APPARATUS, AND METHOD OF MANUFACTURING LIQUID EJECTION HEAD 有权
标题翻译：等离子体蚀刻方法和装置，以及制造液体喷射头的方法
公开(公告)号：US20100216260A1
公开(公告)日：2010-08-26
申请号：US12712132
申请日：2010-02-24
申请人： Shuji Takahashi
发明人： Shuji Takahashi
IPC分类号： H01L21/66 , H01L21/3065 , C23F1/08
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , H01J37/32091 , H01J37/32963 , H01J2237/334 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying processing gas to the chamber, and etching a portion of the material corresponding to an opening portion in the mask pattern; a voltage measurement step of, during the etching in the etching step, measuring a voltage at the surface of the material on a side where the mask pattern is formed, through a conductive member that is placed in contact with the surface of the material on the side where the mask pattern is formed; and a control step of controlling an etching condition in the etching step in accordance with a measurement result obtained in the voltage measurement step.
摘要翻译：等离子体蚀刻方法包括：蚀刻步骤，在室中的台上放置通过保护膜在待蚀刻材料的表面上形成规定的掩模图案的基板，在腔室中产生等离子体，同时向所述室供应处理气体，并且蚀刻与所述掩模图案中的开口部分相对应的所述材料的一部分; 电压测量步骤，在蚀刻步骤的蚀刻期间，通过与所述材料的表面接触放置的导电构件测量形成有所述掩模图案的一侧上的所述材料的表面处的电压形成掩模图案的一侧; 以及根据在电压测量步骤中获得的测量结果来控制蚀刻步骤中的蚀刻条件的控制步骤。

8. 发明申请

US20090223931A1 DRY ETCHING METHOD AND APPARATUS 审中-公开
标题翻译：干蚀刻方法和装置
公开(公告)号：US20090223931A1
公开(公告)日：2009-09-10
申请号：US12396911
申请日：2009-03-03
申请人： Shuji TAKAHASHI
发明人： Shuji TAKAHASHI
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32706 , H01L41/332
摘要： The dry etching method of performing etching, includes the steps of: supplying a processing gas which is a gas mixture of a plurality of fluorochemical gases; and generating plasma under a high vacuum while supplying the processing gas and applying a low-frequency bias voltage.
摘要翻译：进行蚀刻的干蚀刻方法包括以下步骤：供给作为多种含氟气体的气体混合物的处理气体; 以及在高真空下产生等离子体，同时供应处理气体并施加低频偏置电压。

9. 发明申请

US20060115598A1 Repellency increasing structure and method of producing the same, liquid ejection head and method of producing the same, and stain-resistant film 失效
标题翻译：排斥性增加结构及其制造方法，液体喷射头及其制造方法以及耐污染膜
公开(公告)号：US20060115598A1
公开(公告)日：2006-06-01
申请号：US11290695
申请日：2005-12-01
申请人： Yasuhisa Kaneko , Shuji Takahashi , Yoshinori Hotta , Toshiaki Fukunaga
发明人： Yasuhisa Kaneko , Shuji Takahashi , Yoshinori Hotta , Toshiaki Fukunaga
IPC分类号： G11B5/64 , B05D3/10
CPC分类号： B41J2/1606 , Y10T428/24355
摘要： The repellency increasing structure includes a substrate, if a surface of the substrate is flat, a flat surface of which shows lyophilic property with respect to a liquid having a surface tension lower than that of water and multiple recesses multiple and/or projections that are formed in the surface of the substrate. Inner walls of the recesses and outer walls of the projections are substantially parallel to a thickness direction of the substrate. The structure further includes a repellent layer that covers the recesses and the projections. In the liquid ejection head, a solution ejection surface around multiple through-holes of a ejection substrate corresponds to the surface of the substrate of the repellency increasing structure in which the recesses and/or the projections are formed. In the stain-resistant film, the substrate of the repellency increasing structure is a support film.
摘要翻译：排斥性增加结构包括基材，如果基材的表面是平坦的，其平坦表面相对于表面张力低于水的表面张力的液体显示亲液性，并且多个凹陷形成多个和/或突起在基板的表面。突起的凹部和外壁的内壁基本上平行于基板的厚度方向。该结构还包括覆盖凹部和突起的驱避层。在液体喷射头中，喷射基板的多个通孔周围的溶液喷射面对应于形成凹部和/或突起的排斥性增加结构的基板的表面。在耐污染膜中，斥力增加结构的基材是支持膜。

10. 发明授权

US06179008B2 Thermoplastic elastomer composition, process for the preparation there of, hose made by using the composition, and process for the production thereof 失效
标题翻译：热塑性弹性体组合物，其制备方法，使用该组合物制成的软管及其生产方法
公开(公告)号：US06179008B2
公开(公告)日：2001-01-30
申请号：US08930205
申请日：1997-10-09
申请人： Tetsuji Kawazura , Osamu Ozawa , Yoshihiro Soeda , Katuhiro Tanaka , Takashi Satoh , Shigeru Yamauchi , Noriaki Kuroda , Shuji Takahashi , Daisuke Irii , Kazunori Ishikawa , Susumu Hatanaka
发明人： Tetsuji Kawazura , Osamu Ozawa , Yoshihiro Soeda , Katuhiro Tanaka , Takashi Satoh , Shigeru Yamauchi , Noriaki Kuroda , Shuji Takahashi , Daisuke Irii , Kazunori Ishikawa , Susumu Hatanaka
IPC分类号： F19L1108
CPC分类号： B32B25/10 , B29C47/0023 , B29C47/0064 , B29C47/021 , B29C47/023 , B29C47/061 , B29C47/065 , B29C53/58 , B29C70/086 , B29C70/088 , B29C70/222 , B29K2021/00 , B29K2101/12 , B29K2105/0827 , B29K2995/0072 , B29L2009/00 , B29L2023/005 , B32B1/08 , B32B7/12 , B32B2262/0276 , B32B2305/72 , B32B2597/00 , C08L13/00 , C08L23/02 , C08L23/08 , C08L33/06 , C08L33/08 , C08L67/00 , C08L67/02 , C08L67/025 , C08L67/04 , C08L83/00 , C08L83/04 , F16L11/085 , F16L11/086 , Y10T428/31913 , C08L33/00 , C08L2666/02 , C08L2666/08
摘要： A thermoplastic elastomer composition which, when used for the inner tube and/or outer cover of a hose, can improve the hose flexibility at an ordinary temperature and low temperature, oil resistance, and cold resistance and can reduce the production costs since it does not require a vulcanization step and a hose having said properties using this elastomer composition for its inner tube and/or outer cover and a process and apparatus for the production thereof.
摘要翻译：一种热塑性弹性体组合物，当用于软管的内管和/或外盖时，可以在常温和低温，耐油性和耐寒性方面提高软管柔性，并且可以降低生产成本，因为它不需要硫化步骤和具有使用该弹性体组合物的所述性质的软管作为其内管和/或外盖，以及用于生产它的方法和装置。

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