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1. 发明授权

US4042648A Olefin-acrylic ester copolymer-thermoplastic resin composition 失效
标题翻译：烯烃 - 丙烯酸酯共聚物 - 热塑性树脂组合物
公开(公告)号：US4042648A
公开(公告)日：1977-08-16
申请号：US357181
申请日：1973-05-04
申请人： Shuji Kitamura , Takashi Kato , Masaaki Hirooka
发明人： Shuji Kitamura , Takashi Kato , Masaaki Hirooka
IPC分类号： C08L1/00 , C08L7/00 , C08L21/00 , C08L23/00 , C08L23/08 , C08L23/10 , C08L23/12 , C08L23/22 , C08L25/00 , C08L27/00 , C08L31/04 , C08L33/00 , C08L33/02 , C08L33/04 , C08L33/08 , C08L67/00 , C08L77/00 , C08L77/02 , C08L77/06 , C08L101/00 , C08L23/14
CPC分类号： C08L95/00 , C08L101/00 , C08L23/10 , C08L23/12 , C08L25/04 , C08L27/06 , C08L33/12 , C08L77/00 , C08L77/02 , C08L77/06 , C08L23/22 , C08L33/08
摘要： An olefin-acrylic ester copolymer-thermoplastic resin composition comprising one part by weight of an olefin-acrylic ester copolymer and 0.01 to 100 parts by weight of at least one thermoplastic resin having a modulus of elasticity of 10.sup.3 to 10.sup.5 kg/cm.sup.2 at room temperature and selected from the group consisting of crystalline thermoplastic resins and non-crystalline thermoplastic resins having a second-order transition point of 10.degree. C. or higher. The said composition is excellent in impact resistance, resistance to water, and alkali resistance and has improved surface characteristics as well as improved low temperature characteristics.
摘要翻译：一种烯烃 - 丙烯酸酯共聚物 - 热塑性树脂组合物，其包含1重量份的烯烃 - 丙烯酸酯共聚物和0.01至100重量份的至少一种在室温下具有103至105kg / cm 2弹性模量的热塑性树脂选自结晶热塑性树脂和具有10℃以上的二阶转变点的非结晶性热塑性树脂。所述组合物的耐冲击性，耐水性和耐碱性优异，并且具有改善的表面特性以及改进的低温特性。

2. 发明授权

US5482557A Device for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5482557A
公开(公告)日：1996-01-09
申请号：US305285
申请日：1994-09-14
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu , Keishi Saitoh
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-ichi Hanna , Isamu Shimizu , Keishi Saitoh
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/54 , G03G5/08 , C23C16/00
CPC分类号： C23C16/45563 , C23C16/402 , C23C16/455 , C23C16/54 , G03G5/08
摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.
摘要翻译：公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

3. 发明授权

US5470389A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5470389A
公开(公告)日：1995-11-28
申请号：US212930
申请日：1994-03-15
申请人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Junichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

4. 发明授权

US4834023A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US4834023A
公开(公告)日：1989-05-30
申请号：US943437
申请日：1986-12-19
申请人： Keishi Saitoh , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/455 , C23C16/45578
摘要： An apparatus for forming a deposited film by bringing gaseous starting materials for forming deposited film contact with a gaseous halogenic oxidizing agent which exerts oxidative effect on the starting materials, comprises, in a chamber for forming the deposited film, gas discharge means comprised of a gas discharge pipe for discharging the gaseous starting materials and a gas discharge pipe for discharging the halogenic oxidizing agent and means for disposing supports on which a plurality of cylindrical supports for depositing the film thereon are arranged around the gas discharge means.
摘要翻译：通过使用于形成沉积膜的气态原料与对原材料发挥氧化作用的气态卤素氧化剂接触形成沉积膜的装置包括在用于形成沉积膜的室中，包括气体用于排出气态原料的排出管和用于排出卤素氧化剂的气体排出管以及用于设置用于沉积其上的多个圆柱形支撑件的支撑件的装置设置在气体排出装置周围。

5. 发明授权

US4824697A Method for forming a multi-layer deposited film 失效
标题翻译：形成多层沉积膜的方法
公开(公告)号：US4824697A
公开(公告)日：1989-04-25
申请号：US2217
申请日：1987-01-12
申请人： Shunichi Ishihara , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/02 , C23C16/452 , H01L21/205 , C23C16/22
CPC分类号： C23C16/02 , C23C16/452
摘要： A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.
摘要翻译：通过引入由主要原料气体（A）分解形成的活性物质（A）形成沉积膜的方法，所述主要原料气体（A）是通过目标原料气体分解形成的主流量分量和活性种类（B）（C），由化合物（C）形成的活性物质（C）彼此分离成用于在基材上形成沉积膜的成膜空间，并允许所述活性物质（A）和活性物质（B）与所述活化物质（C）进行化学反应，从而在基材上形成沉积膜包括通过改变导入成膜空间的所述活性物质（B）的量来形成多层结构膜。

6. 发明授权

US4822636A Method for forming deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4822636A
公开(公告)日：1989-04-18
申请号：US942214
申请日：1986-12-16
申请人： Keishi Saitoh , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
发明人： Keishi Saitoh , Masaaki Hirooka , Junichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/30 , C23C16/44 , C23C16/452 , C23C16/48 , C23C16/50 , G03G5/08 , G03G5/082 , H01L21/205 , H01L31/02 , H01L31/075 , H01L31/18 , H01L31/20 , B05D5/06 , B05D5/12
CPC分类号： H01L21/02532 , G03G5/08278 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02505 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.
摘要翻译：通过将用于形成沉积膜的气态原料和对所述原料具有氧化作用的气态卤素氧化剂彼此分开引入反应空间形成沉积膜形成沉积膜的方法，以形成沉积膜化学反应，其包括先前激活用于在活化空间中形成价电子控制器的气态物质（D）以形成活化物质并将所述活化物质引入反应空间以形成掺杂的沉积膜。

7. 发明授权

US4772570A Method for producing an electronic device having a multi-layer structure 失效
标题翻译：一种具有多层结构的电子装置的制造方法
公开(公告)号：US4772570A
公开(公告)日：1988-09-20
申请号：US946206
申请日：1986-12-24
申请人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
发明人： Masahiro Kanai , Masaaki Hirooka , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , H01L21/205 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/20
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/452 , H01L21/02422 , H01L21/02425 , H01L21/02505 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S438/935
摘要： A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate comprises forming at least one of said valence electron controlled semiconductor thin layers controlled according to the plasma CVD method and forming at least one of the other constituent layers according to the method comprising introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
摘要翻译：一种具有多层结构的电子器件的制造方法，该多层结构包括在基片上形成的一个或多个价电子受控半导体薄层，包括：根据等离子体CVD法控制的至少一个所述价电子受控半导体薄层，根据包括引入用于形成沉积膜的气态原料和具有将所述起始材料氧化成反应空间的气态卤素氧化剂的方法，至少一个其它构成层之间形成化学接触，由此形成多个前体，其包括处于激发态的前体，并将这些前体中的至少一种转移到与反应空间连通的成膜空间中，作为沉积膜的构成元素的进料源。

8. 发明授权

US4000958A Method for treating leather 失效
标题翻译：皮革处理方法
公开(公告)号：US4000958A
公开(公告)日：1977-01-04
申请号：US567846
申请日：1975-04-14
申请人： Masaaki Hirooka , Yoshikazu Fujii , Kazuhiko Hata
发明人： Masaaki Hirooka , Yoshikazu Fujii , Kazuhiko Hata
IPC分类号： C14C11/00 , D06P3/00 , D06P3/32 , D06P5/08 , B05D3/02
CPC分类号： C14C11/003 , D06P3/00 , D06P3/32 , D06P5/08
摘要： A method for treating a leather, characterized by treating a leather with a polymer [II] obtained by polymerizing 5 to 2,000 parts by weight of at least one member selected from the group consisting of acrylic esters and methacrylic esters in which the alcohol moiety is a hydrocarbon- or halohydrocarbon-group having 1 to 20 carbon atoms, and 500 parts by weight or less of at least one vinyl compound having the formula: ##STR1## wherein R.sup.I and R.sup.II are independently a hydrogen atom, a halogen atom, a hydrocarbon- or halohydrocarbon-group having 1 to 8 carbon atoms, or Y; Y is a group having 1 to 20 carbon atoms and having a group selected from the group consisting of a carboxyl group, acid halide groups, a hydroxyl group, ether groups, and oxygen-containing cyclic compound residues; R.sup.III is an oxygen atom or >N-R.sup.IV wherein R.sup.IV is a hydrogen atom or a hydrocarbon- or halohydrocarbon-group having 1 to 8 carbon atoms, in the presence of 100 parts by weight of a copolymer [I] comprising as essential components at least one monoethylenically unsaturated ester compound having 4 to 22 carbon atoms, at least one member selected from the group consisting of monoethylenically unsaturated hydrocarbon compounds having 2 to 20 carbon atoms and halogen-substituted derivatives thereof and, if necessary, at least one diene or polyene compound. The thus treated leather causes no color bleed, has no tackiness, and has a coating film high in strength and impact resistance.
摘要翻译：一种处理皮革的方法，其特征在于用聚合物[II]处理皮革，所述聚合物[II]通过聚合5至2,000重量份的至少一种选自丙烯酸酯和甲基丙烯酸酯的组分，其中醇部分为具有1至20个碳原子的烃基或卤代烃基，以及500重量份或更少的至少一种具有下式的乙烯基化合物：其中R 1和R 2独立地是氢原子，卤素原子，或具有1至8个碳原子的卤代烃基，或Y; Y为碳原子数为1〜20的基团，具有选自羧基，酰卤基，羟基，醚基和含氧环状化合物残基的基团。 RIII为氧原子或> N-RIV，其中RIV为氢原子或具有1至8个碳原子的烃基或卤代烃基，在100重量份的作为必要成分的共聚物[I]的存在下，至少一种具有4至22个碳原子的单烯键式不饱和酯化合物，至少一种选自具有2-20个碳原子的单烯属不饱和烃化合物和其卤素取代的衍生物，如果需要，至少一种二烯或多烯复合。这样处理的皮革不会引起颜色渗色，没有粘性，并且具有高的强度和耐冲击性的涂膜。

9. 发明授权

US5645947A Silicon-containing deposited film 失效
标题翻译：含硅沉积膜
公开(公告)号：US5645947A
公开(公告)日：1997-07-08
申请号：US477269
申请日：1995-06-07
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B32B9/00 , G03G5/04
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).
摘要翻译：通过在分解空间（B）中形成的高级卤化硅或高级卤代硅烷的气体前体与单独导入的气态活化物质（A）中的化学反应在沉积空间（A）中的基底上形成沉积膜氢，硅烷或在分解空间（C）中形成的卤代硅烷。

10. 发明授权

US5476694A Method for forming deposited film by separately introducing an active species and a silicon compound into a film-forming chamber 失效
标题翻译：通过将活性物质和硅化合物分别引入成膜室来形成沉积膜的方法
公开(公告)号：US5476694A
公开(公告)日：1995-12-19
申请号：US371610
申请日：1995-01-12
申请人： Shunichi Ishihara , Masaaki Hirooka , Shigeru Ohno
发明人： Shunichi Ishihara , Masaaki Hirooka , Shigeru Ohno
IPC分类号： C23C16/30 , C23C16/452 , H01L21/205 , B05D3/08
CPC分类号： C23C16/30 , C23C16/452 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method for forming a deposition film, comprising decomposing a first compound containing germanium and halogen in an activation chamber by applying an energy to form an active species; separately introducing, into a film-forming chamber for forming a deposition film on a substrate, a second compound containing silicon and hydrogen and the active species, which is capable of chemical interaction with the second compound containing silicon and hydrogen; and applying to a mixture of the second compound and the active species at least one excitation energy selected from optical, thermal and discharge energies to excite the second compound in the mixture, thereby facilitating the formation of a deposition film on the substrate.
摘要翻译：一种用于形成沉积膜的方法，包括通过施加能量以形成活性种分解在活化室中含有锗和卤素的第一化合物; 分别引入用于在基板上形成沉积膜的成膜室，含有硅和氢的第二化合物和能够与含有硅和氢的第二化合物发生化学相互作用的活性物质; 以及向所述第二化合物和所述活性物质的混合物施加选自光学，热能和放电能量的至少一种激发能，以激发所述混合物中的所述第二化合物，由此有助于在所述衬底上形成沉积膜。

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