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1. 发明授权

US4835005A Process for forming deposition film 失效
标题翻译：沉积膜成膜工艺
公开(公告)号：US4835005A
公开(公告)日：1989-05-30
申请号：US161386
申请日：1988-02-22
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
摘要翻译：用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上。

2. 发明授权

US5910342A Process for forming deposition film 失效
标题翻译：沉积膜成膜工艺
公开(公告)号：US5910342A
公开(公告)日：1999-06-08
申请号：US469676
申请日：1995-06-06
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B06D3/06 , C23C16/00
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
摘要翻译：用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上。

3. 发明授权

US5645947A Silicon-containing deposited film 失效
标题翻译：含硅沉积膜
公开(公告)号：US5645947A
公开(公告)日：1997-07-08
申请号：US477269
申请日：1995-06-07
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B32B9/00 , G03G5/04
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).
摘要翻译：通过在分解空间（B）中形成的高级卤化硅或高级卤代硅烷的气体前体与单独导入的气态活化物质（A）中的化学反应在沉积空间（A）中的基底上形成沉积膜氢，硅烷或在分解空间（C）中形成的卤代硅烷。

4. 发明授权

US4468443A Process for producing photoconductive member from gaseous silicon compounds 失效
标题翻译：从气态硅化合物制备光导体的方法
公开(公告)号：US4468443A
公开(公告)日：1984-08-28
申请号：US354898
申请日：1982-03-04
申请人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue , Junichiro Kanbe
发明人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue , Junichiro Kanbe
IPC分类号： C23C16/30 , G03G5/082 , H01L31/0392 , H01L31/20
CPC分类号： C23C16/30 , G03G5/08278 , H01L31/03921 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for producing a photoconductive member, which comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances is characterized in that said starting substances are constituted of at least one substance selected from the first group consisting of substances(O) containing oxygen atoms as constituent atom, substances(N) containing nitrogen atoms as constituent atom and substances(C) containing carbon atoms as constituent atom, and at least two compounds selected from the second group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.k (B)wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said at least two compounds selected from the second group consisting of the compounds represented by the formulas (A) and (B) to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol. % based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.
摘要翻译：一种感光体的制造方法，其特征在于，在用于形成光电导层的基板上形成光电导层，通过将在气态下形成光电导层的起始物质引入到保持在期望的减压下的沉积室中，并且激发放电所述起始物质的气体气氛的特征在于，所述起始物质由选自由含有氧原子作为构成原子的物质（O），含有氮原子作为构成原子的物质（N））构成的第一组中的至少一种物质和含有碳原子作为构成原子的物质（C）和至少两种选自下列化合物的化合物：下式化合物SinH2n + 2（A）其中n为正整数，式为SimHlXk（ B）其中m和k是正整数，l是0或正整数，l + k = 2m + 2，X表示卤素原子，n和m在下文中称为“次数”，并且所述至少两种选自由待引入所述沉积室的由式（A）和（B）表示的化合物组成的第二组中的化合物是控制量使得高级化合物的总量的比例至少为1体积％。基于最小订单化合物的总量的％，最小订单化合物是其序列号是所述至少两种化合物的订单号中最小值的化合物，高级化合物是其订货号高于最小订单复合。

5. 发明授权

US4721664A Silicon film deposition from mixture of silanes 失效
标题翻译：从硅烷混合物中沉积硅膜
公开(公告)号：US4721664A
公开(公告)日：1988-01-26
申请号：US867624
申请日：1986-05-27
申请人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
发明人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
IPC分类号： C23C16/24 , G03G5/082 , H01L31/0392 , H01L31/20 , G03G5/085
CPC分类号： H01L31/202 , C23C16/24 , G03G5/08278 , H01L31/03921 , Y02E10/50 , Y02P70/521
摘要： A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compunds selected from the group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.k (B)wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol. % based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.
摘要翻译：一种制造感光体的方法包括在用于形成光电导层的基板上形成光电导层，通过将在气态下形成光电导层的起始物质引入保持在所需减压下的沉积室中，并在气体下激发放电所述起始物质的气氛，其特征在于所述起始物质由选自下列化合物的至少两种化合物构成：下式化合物：其中n为正整数的SinH2n + 2（A）化合物和下式化合物： SimH1Xk（B）其中m和k为正整数，l为0或正整数，l + k = 2m + 2，X为卤原子，n和m在下文称为“次数”，所述起始物质被引入所述沉积室的量被控制为使得高级化合物的总量的比例为至少1体积％。基于最小订单化合物的总量的％，最小订单化合物是其序列号是所述至少两种化合物的订单号中最小值的化合物，高级化合物是其订货号高于最小订单复合。

6. 发明授权

US4450185A Process for forming amorphous silicon film 失效
标题翻译：形成非晶硅膜的工艺
公开(公告)号：US4450185A
公开(公告)日：1984-05-22
申请号：US353186
申请日：1982-03-01
申请人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
发明人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
IPC分类号： C23C16/24 , C23C16/44 , C23C16/503 , G03G5/08 , G03G5/082 , H01L31/20 , H01L45/00
CPC分类号： C23C16/503 , G03G5/08278 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a deposition film on a substrate comprising introducing a deposition film forming material in gaseous state into a deposition chamber, the inside pressure of which is reduced, and causing an electric discharge to take place in a gaseous atmosphere of said deposition film forming material, said process comprising introducing a starting material in gaseous state for preparing said deposition film forming material into a discharge reaction chamber, causing a discharge to take place in a gaseous atmosphere of said starting material to give rise to a reaction of said starting material, and introducing the resulting reaction product into said deposition chamber through a transport means connecting said discharge reaction chamber with said deposition chamber, by which the steps including from the step of preparing said deposition film forming material to the step of forming said deposition film are effected continuously.
摘要翻译：一种在基板上形成沉积膜的方法，包括将气态沉积膜形成材料引入沉积室，其内部压力降低，并且在所述沉积膜形成的气体气氛中发生放电所述方法包括引入气态原料以将所述沉积膜形成材料制备成放电反应室，使得在所述原料的气态气氛中发生放电，引起所述原料的反应，并将所得到的反应产物通过连接所述排放反应室与所述沉积室的输送装置引入所述沉积室，通过该输送装置连续地进行包括从制备所述沉积膜形成材料到形成所述沉积膜的步骤的步骤的步骤。

7. 发明授权

US4405656A Process for producing photoconductive member 失效
标题翻译：光电导体的制造方法
公开(公告)号：US4405656A
公开(公告)日：1983-09-20
申请号：US310484
申请日：1981-10-09
申请人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
发明人： Isamu Shimizu , Kyosuke Ogawa , Eiichi Inoue
IPC分类号： C23C16/24 , C23C16/30 , C23C16/50 , G03G5/08 , G03G5/082 , H01L21/205 , H01L27/146 , H01L31/0248 , H01L31/18 , H01L31/20 , H01L45/00
CPC分类号： H01L31/202 , C23C16/24 , G03G5/082 , Y02E10/50 , Y02P70/521
摘要： A process for producing photoconductive members comprises evacuating a deposition chamber possible to evacuate, to a prescribed degree of vacuum; introducing silicon hydride compound gas, halogen-containing silicon compound gas, and diluent gas in a volume flow ratio of 4-30:2-60:36-81, respectively, into said deposition chamber; forming a gas plasmic atmosphere by generating glow discharge in said surrounding gas mixture; thereby forming, on the surface of a support, for producing the photoconductive member, which has been arranged previously in said deposition chamber, a photoconductive layer constructed of an amorphous material comprising silicon atoms as matrix.
摘要翻译：制造感光体的方法包括将可能排空的沉积室抽真空至规定的真空度; 将硅氢化合物气体，含卤素的硅化合物气体和稀释气体分别以4-30：2-60：36-81的体积流量比引入所述沉积室; 通过在所述周围的气体混合物中产生辉光放电来形成气体等离子体气氛; 从而在支撑体的表面上形成用于制造预先在所述沉积室中的光电导体的由含有硅原子作为基质的非晶材料构成的光电导层。

8. 发明授权

US4797336A Light receiving member having a-Si(GE,SN) photosensitive layer and multi-layered surface layer containing reflection preventive layer and abrasion resistant layer on a support having spherical dimples with inside faces having minute irregularities 失效
标题翻译：具有a-Si（GE，SN）感光层的光接收元件和包含防反射层和耐磨层的多层表面层在具有具有微小不规则性的内表面的球形凹坑的支撑体上
公开(公告)号：US4797336A
公开(公告)日：1989-01-10
申请号：US924265
申请日：1986-10-29
申请人： Mitsuru Honda , Atsushi Koike , Kyosuke Ogawa , Keiichi Murai
发明人： Mitsuru Honda , Atsushi Koike , Kyosuke Ogawa , Keiichi Murai
IPC分类号： G03G5/08 , G03G5/082 , G03G5/10 , G03G5/14 , G03G5/147 , G03G5/085
CPC分类号： G03G5/08242 , G03G5/08235 , G03G5/10 , G03G5/14 , G03G5/14704
摘要： There is provided a light receiving member which comprises a support, a photosensitive layer composed of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and a surface layer, said surface layer being of multi-layered structure having at least an abrasion-resistant layer at the outermost side and a reflection preventive layer in the inside, and said support having a surface provided with irregularities composed of spherical dimples each of which having an inside face provided with minute irregularities. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.
摘要翻译：提供了一种光接收元件，其包括支撑体，由含有硅原子和至少锗原子或锡原子的至少一种或多种锗原子的无定形材料构成的感光层和表面层，所述多层结构的表面层至少具有磨损在最外侧的耐光层和内侧的防反射层，并且所述支撑体具有设置有由球面凹坑构成的凹凸的表面，每个凹坑具有设置有微小凹凸的内侧面。光接收部件克服了包括由非晶硅构成的光接收层的常规光接收部件中的所有问题，并且特别地有效地防止了由于干涉现象而导致形成的图像中的干涉条纹的发生从而形成可视图像即使在使用可能产生干扰的相干激光束作为光源的情况下也具有优异的质量。

9. 发明授权

US4705735A Member having substrate with protruding surface portions and light receiving layer with amorphous silicon matrix 失效
标题翻译：具有具有突出表面部分的基底和具有非晶硅基质的光接收层的构件
公开(公告)号：US4705735A
公开(公告)日：1987-11-10
申请号：US741300
申请日：1985-06-04
申请人： Keishi Saitoh , Tetsuo Sueda , Kyosuke Ogawa , Teruo Misumi , Yoshio Tsuezuki , Masahiro Kanai
发明人： Keishi Saitoh , Tetsuo Sueda , Kyosuke Ogawa , Teruo Misumi , Yoshio Tsuezuki , Masahiro Kanai
IPC分类号： G03G5/082 , G03G5/10 , G03G5/085
CPC分类号： G03G5/10 , G03G5/08214
摘要： A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms, a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity and a surface layer having reflection preventive function provided on the substrate successively from the substrate side.
摘要翻译：光接收部件包括在其表面上具有大量突出部分的基板，每个所述突出部分在预定切割位置具有包括主投影和子投影的截面形状，所述主投影和子投影各自重叠以及具有包含含有硅原子和锗原子的非晶态材料的第一层的多层结构的光接收层，包含含硅原子并具有光电导性的非晶态材料的第二层和具有反射防止功能的表面层从基板侧依次设置在基板上。

10. 发明授权

US4705734A Member having substrate with irregular surface and light receiving layer of amorphous silicon 失效
标题翻译：具有不规则表面的衬底和非晶硅的光接收层的构件
公开(公告)号：US4705734A
公开(公告)日：1987-11-10
申请号：US740714
申请日：1985-06-30
申请人： Keishi Saitoh , Tetsuo Sueda , Kyosuke Ogawa , Teruo Misumi , Yoshio Tsuezuki , Masahiro Kanai
发明人： Keishi Saitoh , Tetsuo Sueda , Kyosuke Ogawa , Teruo Misumi , Yoshio Tsuezuki , Masahiro Kanai
IPC分类号： G03G5/082 , H01L31/09 , G03G5/085
CPC分类号： H01L31/095 , G03G5/08228
摘要： A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer comprising a layer comprising an amorphous material containing silicon atoms, at least a part of the layer region of which has photosensitivity and a surface layer comprising an amorphous material containing silicon atoms and carbon atoms.
摘要翻译：光接收部件包括在其表面上具有大量突出部分的基板，每个所述突出部分在预定切割位置具有包括主投影和子投影的截面形状，所述主投影和子投影各自重叠以及包含含有硅原子的无定形材料的层的光接收层，所述层的至少一部分具有光敏性，所述表面层包含含有硅原子和碳原子的无定形材料。

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