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1. 发明授权

US08859039B2 Method of forming lubricative plated layer on viscous liquid feed nozzle and viscous liquid feed nozzle 有权
标题翻译：在粘性液体进料喷嘴和粘性液体进料喷嘴上形成润滑镀层的方法
公开(公告)号：US08859039B2
公开(公告)日：2014-10-14
申请号：US13300337
申请日：2011-11-18
申请人： Shinpei Kakiuchi , Eijiro Furuta , Takashi Ando
发明人： Shinpei Kakiuchi , Eijiro Furuta , Takashi Ando
IPC分类号： C23C18/16 , C23C18/34 , B05B1/30 , C23C18/32
CPC分类号： B05B1/30 , C23C18/1655 , C23C18/1662 , C23C18/1664 , C23C18/32
摘要： In a viscous liquid feed nozzle having a nozzle body provided with a thin and long hole with a front end serving as a feed port, a lubricative plated layer is provided by immersing the liquid feed nozzle in a plating tank containing a lubricative plating solution and forming, by electroless plating, the lubricative plated layer at least on the inside and outside of the feed port.
摘要翻译：在具有设置有前端作为进料口的薄孔长孔的喷嘴体的粘性液体进料喷嘴中，通过将液体进料喷嘴浸入包含润滑电镀液的镀槽中并形成润滑电镀层，通过化学镀，至少在进料口的内部和外部的润滑镀层。

2. 发明申请

US20120164325A1 METHOD OF FORMING LUBRICATIVE PLATED LAYER ON VISCOUS LIQUID FEED NOZZLE AND VISCOUS LIQUID FEED NOZZLE 有权
标题翻译：粘稠液体进料喷嘴和粘稠液体进料喷嘴形成润滑层的方法
公开(公告)号：US20120164325A1
公开(公告)日：2012-06-28
申请号：US13300337
申请日：2011-11-18
申请人： Shinpei Kakiuchi , Eijiro Furuta , Takashi Ando
发明人： Shinpei Kakiuchi , Eijiro Furuta , Takashi Ando
IPC分类号： B05D1/18 , B05D7/22
CPC分类号： B05B1/30 , C23C18/1655 , C23C18/1662 , C23C18/1664 , C23C18/32
摘要： In a viscous liquid feed nozzle having a nozzle body provided with a thin and long hole with a front end serving as a feed port, a lubricative plated layer is provided by immersing the liquid feed nozzle in a plating tank containing a lubricative plating solution and forming, by electroless plating, the lubricative plated layer at least on the inside and outside of the feed port.
摘要翻译：在具有设置有前端作为进料口的薄孔长孔的喷嘴体的粘性液体进料喷嘴中，通过将液体进料喷嘴浸入包含润滑电镀液的镀槽中并形成润滑电镀层，通过化学镀，至少在进料口的内部和外部的润滑镀层。

3. 发明授权

US08893646B2 Liquid application apparatus 有权
标题翻译：液体施用装置
公开(公告)号：US08893646B2
公开(公告)日：2014-11-25
申请号：US12881803
申请日：2010-09-14
申请人： Takashi Ando , Eijiro Furuta , Shinpei Kakiuchi
发明人： Takashi Ando , Eijiro Furuta , Shinpei Kakiuchi
IPC分类号： B05C5/02
CPC分类号： B05C5/0216 , B05C5/0204 , B05C5/0254 , B05C5/027 , Y10S118/02
摘要： A liquid application apparatus applies a liquid to an objective region. The apparatus includes a trap having an opening from which the liquid linearly appears, a feeder to feed the liquid to the trap, and an operation unit to position the trap on the objective region and bring the linearly appeared liquid at the trap into contact with the objective region, thereby linearly applying the liquid to the objective region. The apparatus is capable of linearly applying the liquid in a uniform thickness to the objective region.
摘要翻译：液体施加装置将液体施加到目标区域。该装置包括具有液体线性出现的开口的捕集器，用于将液体输送到捕集器的进料器和用于将捕集器定位在物镜区域上的操作单元，并使捕获器中的线性出现的液体与从而将液体线性地施加到目标区域。该装置能够将均匀厚度的液体线性地施加到物镜区域。

4. 发明授权

US08662009B2 Adhesive application apparatus 有权
标题翻译：粘合剂涂布装置
公开(公告)号：US08662009B2
公开(公告)日：2014-03-04
申请号：US12881710
申请日：2010-09-14
申请人： Takashi Ando , Eijiro Furuta , Akira Honma
发明人： Takashi Ando , Eijiro Furuta , Akira Honma
IPC分类号： B05C5/00 , B05D7/24 , B05D7/00 , B05D1/26 , B05D1/00
CPC分类号： B05C17/00573 , B05B12/084 , B05B13/0431 , B05B15/80
摘要： An adhesive application apparatus for applying a liquid adhesive to an object includes a regular application stage against which the object is placed for a regular application of the liquid adhesive to the object, a trial application stage to which a trial application of the liquid adhesive is carried out, an application unit relatively movable with respect to the regular application stage and trial application stage to carry out the regular application and trial application of the liquid adhesive, and a suction unit carrying out a suction operation of the liquid adhesive used in the trial application. The adhesive application apparatus smoothly carries out the trial application of the liquid adhesive without bothering the operation of an adhesive application line.
摘要翻译：用于将液体粘合剂施加到物体上的粘合剂施加装置包括常规施加阶段，用于将物体定期施加到物体上的物体被放置在其上，用于粘贴液体粘合剂的试用阶段可以相对于常规应用阶段和试用阶段相对移动的应用单元来执行液体粘合剂的定期应用和试用;以及抽吸单元，其用于试用中使用的液体粘合剂的抽吸操作。粘合剂涂布装置平滑地进行液体粘合剂的试验，而不会影响粘合剂施加线的操作。

5. 发明申请

US20110061589A1 LIQUID APPLICATION APPARATUS 有权
标题翻译：液体应用装置
公开(公告)号：US20110061589A1
公开(公告)日：2011-03-17
申请号：US12881803
申请日：2010-09-14
申请人： Takashi Ando , Eijiro Furuta
发明人： Takashi Ando , Eijiro Furuta
IPC分类号： B05C1/00
CPC分类号： B05C5/0216 , B05C5/0204 , B05C5/0254 , B05C5/027 , Y10S118/02
摘要： A liquid application apparatus applies a liquid to an objective region. The apparatus includes a trap having an opening from which the liquid linearly appears, a feeder to feed the liquid to the trap, and an operation unit to position the trap on the objective region and bring the linearly appeared liquid at the trap into contact with the objective region, thereby linearly applying the liquid to the objective region. The apparatus is capable of linearly applying the liquid in a uniform thickness to the objective region.
摘要翻译：液体施加装置将液体施加到目标区域。该装置包括具有液体线性出现的开口的捕集器，用于将液体输送到捕集器的进料器和用于将捕集器定位在物镜区域上的操作单元，并使捕获器中的线性出现的液体与从而将液体线性地施加到目标区域。该装置能够将均匀厚度的液体线性地施加到物镜区域。

6. 发明授权

US08853413B2 Process for producing pyripyropene derivatives 有权
公开(公告)号：US08853413B2
公开(公告)日：2014-10-07
申请号：US13266671
申请日：2010-05-12
申请人： Yoshimasa Fukuda , Takashi Ando , Kimihiko Goto , Nozomu Nakanishi , Takashi Watanabe , Kenichi Kurihara , Nobuto Minowa , Masaaki Mitomi
发明人： Yoshimasa Fukuda , Takashi Ando , Kimihiko Goto , Nozomu Nakanishi , Takashi Watanabe , Kenichi Kurihara , Nobuto Minowa , Masaaki Mitomi
IPC分类号： C07D401/04
CPC分类号： C07D493/04
摘要： Disclosed is a process for efficiently producing pyripyropene derivatives having acyloxy at the 1-position and 11-position and hydroxyl at the 7-position. The process comprises selectively acylating hydroxyl at the 1-position and 11-position of a compound represented by formula B1 through one to three steps with an acylating agent in the presence or absence of a base.

7. 发明授权

US08786030B2 Gate-last fabrication of quarter-gap MGHK FET 失效
标题翻译：最后制造四分之一MGHK FET
公开(公告)号：US08786030B2
公开(公告)日：2014-07-22
申请号：US13570388
申请日：2012-08-09
申请人： Takashi Ando , Kisik Choi , Vijay Narayanan , Tenko Yamashita , Junli Wang
发明人： Takashi Ando , Kisik Choi , Vijay Narayanan , Tenko Yamashita , Junli Wang
IPC分类号： H01L21/02
CPC分类号： H01L29/517 , H01L21/28079 , H01L21/28088 , H01L29/4958 , H01L29/4966 , H01L29/66545
摘要： A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a gate metal layer located over the high-k dielectric layer, the gate metal layer including titanium nitride and having a thickness of about 20 angstroms; and a metal contact formed over the gate stack. A quarter-gap n-type field effect transistor (NFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a first gate metal layer located over the high-k dielectric layer, the first gate metal layer including titanium nitride; and a metal contact formed over the gate stack.
摘要翻译：通过栅极最终制造形成的四分之一间隙p型场效应晶体管（PFET）包括形成在硅衬底上的栅极堆叠，所述栅极堆叠包括：位于硅衬底上的高k电介质层; 以及位于高k电介质层上方的栅极金属层，所述栅极金属层包括氮化钛并且具有约20埃的厚度; 以及形成在栅极堆叠上的金属接触。通过栅极最后制造形成的四分之一间隙n型场效应晶体管（NFET）包括形成在硅衬底上的栅极堆叠，该栅极堆叠包括：位于硅衬底上的高k电介质层; 以及位于所述高k电介质层上方的第一栅极金属层，所述第一栅极金属层包括氮化钛; 以及形成在栅极堆叠上的金属接触。

8. 发明授权

US08740506B2 Positioning apparatus 有权
标题翻译：定位装置
公开(公告)号：US08740506B2
公开(公告)日：2014-06-03
申请号：US13033253
申请日：2011-02-23
申请人： Shogo Ogaki , Takashi Ando , Masaru Inoue , Takeshi Shimoda
发明人： Shogo Ogaki , Takashi Ando , Masaru Inoue , Takeshi Shimoda
IPC分类号： B65G51/20
CPC分类号： B65G51/03 , B65G47/525 , H01L41/25
摘要： A positioning apparatus includes a stage on which a piezoelectric element is set, a stop unit having a stop face to which the piezoelectric element set on the stage is pushed so that the piezoelectric element is positioned at a target position corresponding to an attaching part of, for example, a head suspension to which the piezoelectric element is attached, and a pushing unit to push the piezoelectric element toward the stop face, the pushing unit blowing a gas to push the piezoelectric element. The positioning apparatus is capable of correctly positioning the piezoelectric element to the target position without damaging the piezoelectric element.
摘要翻译：一种定位装置，包括设置有压电元件的台，具有止动面的停止单元，所述停止面被压入到设置在所述台上的所述压电元件，使得所述压电元件位于对应于所述平台的安装部的目标位置，例如，安装有压电元件的磁头悬架以及将压电元件朝向止动面推压的推压单元，推压单元吹出气体来推压压电元件。定位装置能够将压电元件正确地定位到目标位置而不损坏压电元件。

9. 发明授权

US08647972B1 Multi-layer work function metal replacement gate 有权
标题翻译：多层功能金属更换门
公开(公告)号：US08647972B1
公开(公告)日：2014-02-11
申请号：US13618255
申请日：2012-09-14
申请人： Takashi Ando , Aritra Dasgupta , Unoh Kwon , Sean M. Polvino
发明人： Takashi Ando , Aritra Dasgupta , Unoh Kwon , Sean M. Polvino
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/66795
摘要： Embodiments relate to a field-effect transistor (FET) replacement gate apparatus. The apparatus includes one or more of a substrate and insulator including a base and side walls defining a trench. A high-dielectric constant (high-k) layer is formed on the base and side walls of the trench. The high-k layer has an upper surface conforming to a shape of the trench. A first layer is formed on the high-k layer and conforms to the shape of the trench. The first layer includes an aluminum-free metal nitride. A second layer is formed on the first layer and conforms to the shape of the trench. The second layer includes aluminum and at least one other metal. A third layer is formed on the second layer and conforms to the shape of the trench. The third layer includes aluminum-free metal nitride.
摘要翻译：实施例涉及场效应晶体管（FET）替换门装置。该装置包括一个或多个衬底和绝缘体，其包括限定沟槽的基底和侧壁。在沟槽的底壁和侧壁上形成高介电常数（高k）层。高k层具有与沟槽形状一致的上表面。第一层形成在高k层上并符合沟槽的形状。第一层包括无铝的金属氮化物。在第一层上形成第二层并符合沟槽的形状。第二层包括铝和至少一种其他金属。第三层形成在第二层上并符合沟槽的形状。第三层包括无铝金属氮化物。

10. 发明申请

US20140008986A1 INVERTER SYSTEM 审中-公开
标题翻译：逆变器系统
公开(公告)号：US20140008986A1
公开(公告)日：2014-01-09
申请号：US14006905
申请日：2012-03-16
申请人： Taku Miyauchi , Takashi Ando
发明人： Taku Miyauchi , Takashi Ando
IPC分类号： H02J1/10
CPC分类号： H02J1/102 , H02J3/383 , H02M3/1584 , H02M2001/007 , Y02E10/563 , Y10T307/707
摘要： In the present invention, first boosting circuits (41a to 41d) are interposed upon each of direct current power lines (La to Ld). The boosting ratios of the first boosting circuits (41a to 41d), for each iteration of a first cycle, are variably controlled during a first period so that the generated power of the corresponding solar cell strings (1a to 1d) is maximized, and the boosting ratios during a second period are controlled so as to be maintained at a uniform value. The total amount of time of the first period and the second period is made to correspond to the first cycle.
摘要翻译：在本发明中，第一升压电路（41a〜41d）被插入到每条直流电力线（La〜Ld）上。对于第一周期的每次迭代，第一升压电路（41a至41d）的升压比在第一时段期间被可变地控制，使得对应的太阳能电池串（1a至1d）的发电功率最大化，并且控制第二期间的升压比，以保持均匀的值。第一周期和第二周期的总时间量对应于第一周期。

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