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1. 发明授权

US08790489B2 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US08790489B2
公开(公告)日：2014-07-29
申请号：US13175096
申请日：2011-07-01
申请人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
发明人： Masanobu Honda , Kazuhiro Kubota , Yoshinobu Ooya , Masaru Nishino
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , H01L21/311 , H01J37/32 , H01L21/67 , H01J37/18 , C23C16/06 , C23C16/22
CPC分类号： H01L21/6719 , H01J37/18 , H01J37/32091 , H01J37/32633 , H01J37/32834 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： The substrate processing apparatus includes a process chamber which accommodates a wafer and performs a plasma etching process on the wafer, an exhaust chamber which communicates with the process chamber, an exhaust plate which divides the process chamber from the exhaust chamber and prevents plasma inside the process chamber from leaking into the exhaust chamber, and an upper electrode plate arranged inside the exhaust chamber, wherein the exhaust plate includes a plurality of through holes, and the upper electrode plate includes a plurality of through holes, is capable of contacting the exhaust plate in parallel, and is capable of being spaced apart from the exhaust plate.
摘要翻译：基板处理装置包括处理室，其容纳晶片并对晶片进行等离子体蚀刻处理，与处理室连通的排气室，将处理室与排气室分隔开的排气板，防止处理过程中的等离子体所述排气板包括多个通孔，所述上电极板包括多个通孔，所述多个通孔能够将所述排气板与所述排气室接触，并且能够与排气板间隔开。

2. 发明申请

US20130014895A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20130014895A1
公开(公告)日：2013-01-17
申请号：US13542818
申请日：2012-07-06
申请人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
发明人： Masaya Kawamata , Masanobu Honda , Kazuhiro Kubota
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , C23C16/4558 , H01J37/3244
摘要： A substrate processing apparatus can suppress an edge gas from being diffused toward a center region of a substrate. An upper electrode 200 serving as a gas introducing unit configured to supply one kind of gas or different kinds of gases to a center region and an edge region of the substrate includes a center gas inlet section 204 having a multiple number of gas holes 212 for a center gas; and an edge gas inlet section 206 having a multiplicity of gas holes 214 for an edge gas. By providing a gas hole formation plate 230 having gas holes 232 communicating with the gas holes 214 at a bottom surface of the edge gas inlet section 206, a vertical position of edge gas discharging openings can be adjusted.
摘要翻译：基板处理装置可以抑制边缘气体朝向基板的中心区域扩散。作为构成为将一种气体或不同种类的气体供给到基板的中心区域和边缘区域的气体导入单元的上部电极200包括具有多个气孔212的中心气体导入部204，中心气以及边缘气体入口部分206，其具有用于边缘气体的多个气体孔214。通过在边缘气体入口部206的底面设置具有与气孔214连通的气孔232的气孔形成板230，能够调整边缘气体排出口的垂直位置。

3. 发明授权

US08263499B2 Plasma processing method and computer readable storage medium 有权
标题翻译：等离子体处理方法和计算机可读存储介质
公开(公告)号：US08263499B2
公开(公告)日：2012-09-11
申请号：US12414920
申请日：2009-03-31
申请人： Masanobu Honda , Michiko Nakaya
发明人： Masanobu Honda , Michiko Nakaya
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144 , H01J37/32027 , H01J37/32091 , H01L21/0273 , H01L21/31116
摘要： A plasma etching method includes disposing first electrode and second electrodes; preparing a part in a processing chamber; supporting a substrate by the second electrode to face the first electrode; vacuum-evacuating the processing chamber; supplying a first processing gas containing an etchant gas into a processing space between the first electrode and the second electrode; generating a plasma of the first processing gas in the processing space by applying a radio frequency power to the first electrode or the second electrode; and etching a film on the substrate by using the plasma. Further, a resist modification process includes vacuum-evacuating the processing chamber; supplying a second processing gas into the processing space; generating a plasma; and applying a negative DC voltage to the part, the part being disposed away from the substrate in the processing chamber and injecting electrons discharged from the part into the resist pattern on the substrate.
摘要翻译：等离子体蚀刻方法包括：配置第一电极和第二电极; 在处理室中准备一部分; 通过所述第二电极支撑衬底以面对所述第一电极; 真空抽真空处理室; 将含有蚀刻剂气体的第一处理气体供应到第一电极和第二电极之间的处理空间中; 通过向所述第一电极或所述第二电极施加射频功率来在所述处理空间中产生所述第一处理气体的等离子体; 并通过使用等离子体在基板上蚀刻膜。此外，抗蚀剂修饰工艺包括对处理室进行真空抽真空; 将第二处理气体供应到所述处理空间中; 产生等离子体以及向所述部分施加负的DC电压，所述部分远离处理室中的衬底设置，并将从部件排出的电子注入到衬底上的抗蚀剂图案中。

4. 发明授权

US08241514B2 Plasma etching method and computer readable storage medium 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US08241514B2
公开(公告)日：2012-08-14
申请号：US12413999
申请日：2009-03-30
申请人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
发明人： Masanobu Honda , Hiroyuki Nakayama , Manabu Sato
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/32027 , H01J37/32091 , H01L21/67069
摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.
摘要翻译：等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

5. 发明授权

US08157952B2 Plasma processing chamber, potential controlling apparatus, potential controlling method, program for implementing the method, and storage medium storing the program 有权
标题翻译：等离子体处理室，电位控制装置，电位控制方法，实现该方法的程序和存储程序的存储介质
公开(公告)号：US08157952B2
公开(公告)日：2012-04-17
申请号：US11442287
申请日：2006-05-30
申请人： Masanobu Honda , Toshihiro Hayami
发明人： Masanobu Honda , Toshihiro Hayami
IPC分类号： H01J7/24
CPC分类号： H01J37/32568 , H01J37/32091
摘要： A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.
摘要翻译：一种等离子体处理室，其能够以简单的结构容易地控制附着的聚合物的量。容器11容纳半导体晶片W.基座12设置在容器11中并连接到下电极射频电源20.在等离子体处理室10中，可以在半导体晶片W上执行RIE和灰化使用从加入到容器11中的加工气体产生的等离子体。侧壁构件45设置在容器11中并暴露于等离子体。根据执行RIE和灰化的方式将侧壁构件45的电位设置为浮动电位或接地电位。

6. 发明授权

US08057603B2 Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber 有权
标题翻译：基板处理室，存储介质和基板处理室的清洗方法
公开(公告)号：US08057603B2
公开(公告)日：2011-11-15
申请号：US11671223
申请日：2007-02-05
申请人： Masanobu Honda , Yutaka Matsui
发明人： Masanobu Honda , Yutaka Matsui
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： B08B7/0035 , H01J37/32862 , Y10S438/905
摘要： A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.
摘要翻译：一种能够防止在处理室内部组件的表面上形成氧化膜的基板处理室的清洗方法。衬底处理室11中具有转移晶片W的处理空间S，并且在处理空间S中对晶片W进行反应离子蚀刻。衬底处理室11具有上电极板38，上电极板38包括硅和其下表面暴露于处理空间S.使用从引入到处理空间S中的氧气产生的氧自由基，在上电极板38上进行干洗。在上电极板上进行氧化物去除处理 38使用从引入到处理空间S中的四氟化碳气体产生的氟离子和氟自由基。

7. 发明申请

US20110240599A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20110240599A1
公开(公告)日：2011-10-06
申请号：US13076907
申请日：2011-03-31
申请人： Masanobu HONDA
发明人： Masanobu HONDA
IPC分类号： H01L21/3065
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32541 , H01J37/32568
摘要： A plasma processing apparatus for generating a plasma in a plasma processing space in a processing chamber and plasma-processing a target object includes a plasma-exciting high frequency power supply for applying a plasma-exciting high frequency power. Further, the plasma processing apparatus includes at least one of a potential-controlling high frequency power supply for applying a potential-controlling high frequency power having a frequency lower than that of the plasma-exciting high frequency power and a DC power supply for applying a DC voltage; and a mounting table for mounting thereon a target object. Furthermore, the plasma processing apparatus includes an auxiliary electrode, provided at a position outer side of the target object mounted on the mounting table while facing the mounting table, connected to at least one of the potential-controlling high frequency power supply and the DC power supply.
摘要翻译：一种用于在处理室中的等离子体处理空间中产生等离子体并等离子体处理目标物体的等离子体处理装置包括用于施加等离子体激发高频功率的等离子体激发高频电源。此外，等离子体处理装置包括用于施加频率低于等离子体激发高频功率的电位控制高频电力的电位控制高频电源和用于施加等离子体激发高频电力的直流电源中的至少一个直流电压; 以及用于在其上安装目标物体的安装台。此外，等离子体处理装置包括辅助电极，其设置在安装在安装台上的目标物体的位于外部的面对安装台的位置，与至少一个电位控制高频电源和DC电力供应。

8. 发明授权

US07883632B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07883632B2
公开(公告)日：2011-02-08
申请号：US11689065
申请日：2007-03-21
申请人： Masanobu Honda , Yutaka Matsui , Manabu Sato
发明人： Masanobu Honda , Yutaka Matsui , Manabu Sato
IPC分类号： G06F19/00 , C23C14/32 , C23C14/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/3255 , H01J37/32706 , H01J37/32862 , H01J37/32926 , H01L21/02532 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
摘要翻译：一种使聚合物能够从电绝缘电极移除的等离子体处理装置。等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。射频电源连接到基座。上电极板与基板处理室的壁和基座电绝缘。直流电源连接到上电极板。等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

9. 发明申请

US20100093178A1 Si ETCHING METHOD 有权
标题翻译： Si蚀刻方法
公开(公告)号：US20100093178A1
公开(公告)日：2010-04-15
申请号：US12576536
申请日：2009-10-09
申请人： Masanobu HONDA
发明人： Masanobu HONDA
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/3244 , H01J37/32449 , H01J2237/334
摘要： A Si etching method includes: arranging a silicon substrate or a substrate having a silicon layer in a processing chamber; generating a plasma of an etching gas in the processing chamber; and etching the silicon substrate by the plasma. The etching gas is a gaseous mixture including a Br2 gas and one of a Cl2 gas and a chloride gas. The chloride gas has a mass that is higher than that of the Cl2 gas.
摘要翻译： Si蚀刻方法包括：在处理室中布置硅衬底或具有硅层的衬底; 在所述处理室中产生蚀刻气体的等离子体; 并通过等离子体蚀刻硅衬底。蚀刻气体是包含Br 2气体和Cl 2气体和氯化物气体之一的气体混合物。氯化物气体的质量高于Cl2气体。

10. 发明申请

US20100027160A1 DISK DRIVE INCLUDING A SHROUD FOR REMOVING DEBRIS FROM A HEAD-SLIDER 有权
标题翻译：磁盘驱动器，其中包括从主机上卸下DEBRIS的SHROUD
公开(公告)号：US20100027160A1
公开(公告)日：2010-02-04
申请号：US12512923
申请日：2009-07-30
申请人： Kazuhisa Murakami , Teruyoshi Higashiya , Mitsuhiko Oguchi , Masanobu Honda
发明人： Kazuhisa Murakami , Teruyoshi Higashiya , Mitsuhiko Oguchi , Masanobu Honda
IPC分类号： G11B33/14
CPC分类号： G11B5/41
摘要： A disk drive. The disk drive includes a head-slider, an actuator, a ramp and a shroud. The head-slider is configured to fly above the disk. The actuator is configured to support the head-slider and to swing about a pivot shaft to move the head-slider in a radial direction of the disk. The actuator may also be configured to rest on the ramp in a stand-by position. The shroud includes an inner peripheral side surface and an outer peripheral side surface. The shroud is configured to control an air-stream which flows in a direction from the pivot shaft toward the head-slider. The inner peripheral side surface and the outer peripheral side surface are configured to blast the head-slider with the air-stream upon spinning the disk when the head-slider is positioned away from the disk in the stand-by position.
摘要翻译：磁盘驱动器磁盘驱动器包括磁头滑动器，致动器，斜坡和护罩。磁头滑块配置为在磁盘上方飞。致动器构造成支撑头部滑动件并围绕枢轴摆动以沿着盘的径向方向移动头部滑块。致动器还可以被配置为在待机位置上搁置在斜坡上。护罩包括内周侧表面和外周侧表面。护罩构造成控制沿着从枢轴向头部滑块的方向流动的气流。内周侧表面和外周侧表面被配置为当磁头滑动件在待机位置远离盘定位时，在旋转盘时，利用气流喷射头滑块。

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