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1. 发明授权

US09099627B2 Method for producing group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US09099627B2
公开(公告)日：2015-08-04
申请号：US13824286
申请日：2011-07-12
申请人： Shingo Totani , Masashi Deguchi , Miki Moriyama
发明人： Shingo Totani , Masashi Deguchi , Miki Moriyama
IPC分类号： H01L33/60 , H01L33/44 , H01L33/46 , H01L33/38
CPC分类号： H01L33/60 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2933/0025
摘要： Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 Å to 30 Å, Ag/Al where Al has a thickness of 20 Å, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 Å, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.
摘要翻译：通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜和反射膜来制造样品A. 样品B通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜，反射膜和SiO 2的第二绝缘膜来制造。在样品A和B中，在热处理前后在450nm的波长下测量反射膜的反射率。在600℃下进行热处理3分钟。如图所示。如图1所示，在Al / Ag / Al中，其中Al具有厚度为的厚度为的Al / Ag / Al，Al的厚度为Al，Al / Ag / Al / Ag / Al，其中Al的厚度为反射率为95％以上，即使在热处理后也等于或高于Ag。

2. 发明申请

US20130203194A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：生产III族氮化物半导体发光器件的方法
公开(公告)号：US20130203194A1
公开(公告)日：2013-08-08
申请号：US13824286
申请日：2011-06-12
申请人： Shingo Totani , Masashi Deguchi , Miki Moriyama
发明人： Shingo Totani , Masashi Deguchi , Miki Moriyama
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2933/0025
摘要： Sample A is produced by sequentially forming a first insulating film of SiO2 and a reflective film on a sapphire substrate. Sample B is produced by sequentially forming a first insulating film of SiO2, a reflective film, and a second insulating film of SiO2 on a sapphire substrate. In both samples A and B, the reflectance of the reflective film was measured at a wavelength of 450 nm before and after heat treatment. Heat treatment was performed at 600° C. for three minutes. As shown in FIG. 1, in Al/Ag/Al where Al has a thickness of 1 Å to 30 Å, Ag/Al where Al has a thickness of 20 Å, and Al/Ag/Al/Ag/Al where Al has a thickness of 20 Å, the reflectance was 95% or more, which is equivalent to or higher than that of Ag even after the heat treatment.
摘要翻译：通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜和反射膜来制造样品A. 样品B通过在蓝宝石衬底上依次形成SiO 2的第一绝缘膜，反射膜和SiO 2的第二绝缘膜来制造。在样品A和B中，在热处理前后在450nm的波长下测量反射膜的反射率。在600℃下进行热处理3分钟。如图所示。如图1所示，在Al / Ag / Al中，其中Al具有厚度为的厚度为的Al / Ag / Al，Al的厚度为Al，Al / Ag / Al / Ag / Al，其中Al的厚度为反射率为95％以上，即使在热处理后也等于或高于Ag。

3. 发明授权

US08912559B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08912559B2
公开(公告)日：2014-12-16
申请号：US13426534
申请日：2012-03-21
申请人： Shingo Totani , Masashi Deguchi , Naoki Nakajo
发明人： Shingo Totani , Masashi Deguchi , Naoki Nakajo
IPC分类号： H01L33/00 , H01L29/06 , H01L31/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L33/38 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0025 , H01L33/06 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L2933/0025
摘要： A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.
摘要翻译： III族氮化物半导体发光器件包括从p型层的顶表面延伸到n型层的深度的凹槽设置在与布线部分重叠（在平面图中）与 n电极或p电极的配线部分。设置绝缘膜，以连续地覆盖凹槽的侧表面和底表面，p型层和ITO电极。绝缘膜在n电极正下方的区域和p电极（蓝宝石衬底的侧面）上包含反射膜。 n电极的配线部正下方的区域和p电极的配线部的反射膜的位置比发光层低。 n电极和p电极被另外的绝缘膜覆盖。

4. 发明授权

US08673677B2 Method for producing group III nitride semiconductor light emitting element 有权
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US08673677B2
公开(公告)日：2014-03-18
申请号：US13421717
申请日：2012-03-15
申请人： Shingo Totani , Masashi Deguchi
发明人： Shingo Totani , Masashi Deguchi
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L33/38 , H01L33/60 , H01L2933/0016 , H01L2933/0058
摘要： A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film.
摘要翻译：将包含Ag合金的Ag的反射膜图案化均匀，而不会降低反射率。通过溅射，真空蒸镀等在第一绝缘膜的整个表面上形成反射膜，通过剥离法在反射膜上形成具有给定图案的阻挡金属膜。使用银蚀刻液对反射膜进行湿式蚀刻。阻挡金属膜不被银蚀刻液湿法蚀刻，因此用作掩模，并且形成有阻挡金属膜的区域中的反射膜未被蚀刻。结果，具有所需图案的反射膜可以均匀地形成在第一绝缘膜上。

5. 发明授权

US08552447B2 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US08552447B2
公开(公告)日：2013-10-08
申请号：US12929796
申请日：2011-02-16
申请人： Kosuke Yahata , Takashi Mizobuchi , Takahiro Mori , Masashi Deguchi , Shingo Totani
发明人： Kosuke Yahata , Takashi Mizobuchi , Takahiro Mori , Masashi Deguchi , Shingo Totani
IPC分类号： H01L33/42
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light-emitting element includes a semiconductor laminated structure including a light-emitting layer sandwiched between first and second conductivity type layers for extracting an emitted light from the light-emitting layer on a side of the second conductivity type layer, a transparent electrode in ohmic contact with the second conductivity type layer, an insulation layer formed on the transparent electrode, an upper electrode for wire bonding formed on the insulation layer, a lower electrode that penetrates the insulation layer, is in ohmic contact with the transparent electrode and the electrode for wire bonding, and has an area smaller than that of the upper electrode in top view, and a reflective portion for reflecting at least a portion of light transmitted through a region of the transparent electrode not in contact with the lower electrode.
摘要翻译：半导体发光元件包括半导体层叠结构，该半导体层叠结构包括夹在第一和第二导电类型层之间的发光层，用于从第二导电类型层侧的发光层提取发射光，将透明电极与第二导电型层欧姆接触，形成在透明电极上的绝缘层，形成在绝缘层上的引线接合用上电极，穿透绝缘层的下电极与透明电极和电极欧姆接触用于引线接合，并且具有比顶视图中的上电极的面积小的面积;以及反射部分，用于反射透射通过透明电极的区域的光的至少一部分而不与下电极接触。

6. 发明申请

US20120244653A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：生产III族氮化物半导体发光元件的方法
公开(公告)号：US20120244653A1
公开(公告)日：2012-09-27
申请号：US13421717
申请日：2012-03-15
申请人： Shingo TOTANI , Masashi Deguchi
发明人： Shingo TOTANI , Masashi Deguchi
IPC分类号： H01L33/60
CPC分类号： H01L33/007 , H01L33/38 , H01L33/60 , H01L2933/0016 , H01L2933/0058
摘要： A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film.
摘要翻译：将包含Ag合金的Ag的反射膜图案化均匀，而不会降低反射率。通过溅射，真空蒸镀等在第一绝缘膜的整个表面上形成反射膜，通过剥离法在反射膜上形成具有给定图案的阻挡金属膜。使用银蚀刻液对反射膜进行湿式蚀刻。阻挡金属膜不被银蚀刻液湿法蚀刻，因此用作掩模，并且形成有阻挡金属膜的区域中的反射膜未被蚀刻。结果，具有所需图案的反射膜可以均匀地形成在第一绝缘膜上。

7. 发明申请

US20110198641A1 Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US20110198641A1
公开(公告)日：2011-08-18
申请号：US12929796
申请日：2011-02-16
申请人： Kosuke Yahata , Takashi Mizobuchi , Takahiro Mori , Masashi Deguchi , Shingo Totani
发明人： Kosuke Yahata , Takashi Mizobuchi , Takahiro Mori , Masashi Deguchi , Shingo Totani
IPC分类号： H01L33/42
CPC分类号： H01L33/46 , H01L33/20 , H01L33/38 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light-emitting element includes a semiconductor laminated structure including a light-emitting layer sandwiched between first and second conductivity type layers for extracting an emitted light from the light-emitting layer on a side of the second conductivity type layer, a transparent electrode in ohmic contact with the second conductivity type layer, an insulation layer formed on the transparent electrode, an upper electrode for wire bonding formed on the insulation layer, a lower electrode that penetrates the insulation layer, is in ohmic contact with the transparent electrode and the electrode for wire bonding, and has an area smaller than that of the upper electrode in top view, and a reflective portion for reflecting at least a portion of light transmitted through a region of the transparent electrode not in contact with the lower electrode.
摘要翻译：半导体发光元件包括半导体层叠结构，该半导体层叠结构包括夹在第一和第二导电类型层之间的发光层，用于从第二导电类型层侧的发光层提取发射光，将透明电极与第二导电型层欧姆接触，形成在透明电极上的绝缘层，形成在绝缘层上的引线接合用上电极，穿透绝缘层的下电极与透明电极和电极欧姆接触用于引线接合，并且具有比顶视图中的上电极的面积小的面积;以及反射部分，用于反射透射通过透明电极的区域的光的至少一部分而不与下电极接触。

8. 发明授权

US08716732B2 Light emitting element 有权
标题翻译：发光元件
公开(公告)号：US08716732B2
公开(公告)日：2014-05-06
申请号：US13137540
申请日：2011-08-24
申请人： Masao Kamiya , Masashi Deguchi
发明人： Masao Kamiya , Masashi Deguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/20 , H01L33/382 , H01L33/46 , H01L33/60 , H01L2924/0002 , H01L2933/0025 , H01L2924/00
摘要： A light emitting element includes a semiconductor laminate structure including a first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of a second conductivity type different from the first conductivity type, a part of the second semiconductor layer and the light emitting layer being removed to expose a part of the first semiconductor layer, a first reflecting layer on the semiconductor laminate structure and including an opening, the opening being formed in the exposed part of the first semiconductor layer, a transparent wiring electrode for carrier injection into the first semiconductor layer or the second semiconductor layer through the opening, a second reflecting layer formed on the transparent wiring electrode and covering a part of the opening so as to reflect light emitted from the light emitting layer and passing through the opening back to the first semiconductor layer.
摘要翻译：发光元件包括半导体层叠结构，其包括第一导电类型的第一半导体层，发光层和不同于第一导电类型的第二导电类型的第二半导体层，第二半导体层的一部分和去除所述发光层以暴露所述第一半导体层的一部分，所述半导体层叠结构上的第一反射层，并且包括开口，所述开口形成在所述第一半导体层的暴露部分中，用于载体的透明布线电极通过所述开口注入到所述第一半导体层或所述第二半导体层中的第二反射层，形成在所述透明布线电极上并覆盖所述开口的一部分的第二反射层，以便反射从所述发光层发射的光并通过所述开口返回到第一半导体层。

9. 发明授权

US06253305B1 Microprocessor for supporting reduction of program codes in size 有权
标题翻译：支持缩小程序代码的微处理器
公开(公告)号：US06253305B1
公开(公告)日：2001-06-26
申请号：US09226791
申请日：1999-01-07
申请人： Toshimichi Matsuzaki , Masashi Deguchi , Toshifumi Hamaguchi , Yutaka Tanase , Masahiko Matsumoto
发明人： Toshimichi Matsuzaki , Masashi Deguchi , Toshifumi Hamaguchi , Yutaka Tanase , Masahiko Matsumoto
IPC分类号： G06F922
CPC分类号： G06F9/3814 , G06F9/30149 , G06F9/30156 , G06F9/30167 , G06F9/30178 , G06F9/3802 , G06F9/3816 , G06F9/383
摘要： A microprocessor is provided for supporting reduction of codes in size, wherein instructions are extended in units of 0.5 word from a basic one word code. A word of instruction, fetched from an external memory, is transferred to a decoding register via instruction buffers and a selector both operate in units of half words, then is decoded by a decoder. A storage unit stores a state of an instruction stored in an instruction buffer. A controlling unit controls the selector so that the instructions are transferred from instruction buffers to the decoding register in units of half words based on a direction from the decoder and the states stored in the storage unit.
摘要翻译：提供了一种微处理器，用于支持尺寸减小的代码，其中指令以基本一字代码的0.5字为单位进行扩展。从外部存储器取出的指令字通过指令缓冲器传送到解码寄存器，选择器以半字为单位进行操作，然后由解码器解码。存储单元存储存储在指令缓冲器中的指令的状态。控制单元控制选择器，使得指令基于来自解码器的方向和存储在存储单元中的状态，以半字为单位从指令缓冲器传送到解码寄存器。

10. 发明授权

US09117973B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09117973B2
公开(公告)日：2015-08-25
申请号：US13317692
申请日：2011-10-26
申请人： Masashi Deguchi
发明人： Masashi Deguchi
IPC分类号： H01L33/00 , H01L33/42 , H01L33/38 , H01L33/46 , H01L33/32
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/46
摘要： A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, a first transparent electrode formed on the second conductive type layer, a reflecting layer formed on the first transparent electrode, and including a smaller area than the first transparent electrode, a second transparent electrode formed on the first transparent electrode so as to cover the reflecting layer, and a pad electrode formed on the second transparent electrode and in a region above the reflecting layer.
摘要翻译：半导体发光元件包括半导体多层结构，其包括第一导电类型层，第二导电类型层和夹在第一导电类型层和第二导电类型层之间的发光层，形成在第二导电类型层上的第一透明电极形成在第一透明电极上并具有比第一透明电极小的区域的反射层，形成在第一透明电极上以覆盖反射层的第二透明电极和形成在第二透明电极上的第二透明电极的焊盘电极透明电极和反射层上方的区域。

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