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1. 发明授权

US08912559B2 Group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体发光器件
公开(公告)号：US08912559B2
公开(公告)日：2014-12-16
申请号：US13426534
申请日：2012-03-21
申请人： Shingo Totani , Masashi Deguchi , Naoki Nakajo
发明人： Shingo Totani , Masashi Deguchi , Naoki Nakajo
IPC分类号： H01L33/00 , H01L29/06 , H01L31/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L33/38 , H01L33/46
CPC分类号： H01L33/46 , H01L33/0025 , H01L33/06 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L2933/0025
摘要： A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.
摘要翻译： III族氮化物半导体发光器件包括从p型层的顶表面延伸到n型层的深度的凹槽设置在与布线部分重叠（在平面图中）与 n电极或p电极的配线部分。设置绝缘膜，以连续地覆盖凹槽的侧表面和底表面，p型层和ITO电极。绝缘膜在n电极正下方的区域和p电极（蓝宝石衬底的侧面）上包含反射膜。 n电极的配线部正下方的区域和p电极的配线部的反射膜的位置比发光层低。 n电极和p电极被另外的绝缘膜覆盖。

2. 发明授权

US08247823B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08247823B2
公开(公告)日：2012-08-21
申请号：US12923384
申请日：2010-09-17
申请人： Kosuke Yahata , Naoki Nakajo , Masao Kamiya
发明人： Kosuke Yahata , Naoki Nakajo , Masao Kamiya
IPC分类号： H01L27/15 , H01L27/148 , H01L21/00
CPC分类号： H01L33/382 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction.
摘要翻译：发光元件包括：半导体层叠结构，包括第一半导体层，发光层和第二半导体层，设置在半导体层叠结构上的绝缘层，第一布线，包括第一垂直导电部分和第一平面导电部分并且电连接到第一半导体层，第一垂直导电部分在垂直方向上在绝缘层，发光层和第二半导体层的内部延伸，并且第一平面导电部分在绝缘层内部延伸平面方向，第二布线包括第二垂直导电部分和第二平面导电部分，并且电连接到第二半导体层，第二垂直导电部分在垂直方向上延伸在绝缘层内部，第二平面导电部分延伸里面 e绝缘层在平面方向上。

3. 发明申请

US20090039374A1 Flip chip type light-emitting element 有权
标题翻译：倒装芯片型发光元件
公开(公告)号：US20090039374A1
公开(公告)日：2009-02-12
申请号：US12222366
申请日：2008-08-07
申请人： Kosuke Yahata , Naoki Nakajo
发明人： Kosuke Yahata , Naoki Nakajo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/44 , H01L33/46
摘要： In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.
摘要翻译：在本发明的倒装型发光元件中，n型接触电极14形成在以梳齿形状露出的n层11上，在整个表面上形成由ITO制成的透光电极15 在透光电极15上以规定的间隔形成p层13的上表面和20个焊盘电极16.焊盘电极16的平面形状具有从圆形中心部16a以十字形突出的四个分支16b 以及通过分支16b彼此连接的相邻的焊盘电极16。

4. 发明申请

US20070165278A1 Printer 审中-公开
标题翻译：打印机
公开(公告)号：US20070165278A1
公开(公告)日：2007-07-19
申请号：US11654969
申请日：2007-01-17
申请人： Naoki Nakajo
发明人： Naoki Nakajo
IPC分类号： G06K15/00
CPC分类号： B41J3/4071
摘要： A printing apparatus is operable to read out data from a first recording medium and to execute printing based on the read-out data. A command receiver is adapted to receive, from an operator, a command for executing backup of the data in the first recording medium on a second recording medium. A message provider is operable to provide a message for prompting the operator to execute printing on a surface of the second recording medium when the command receiver receives the command.
摘要翻译：打印装置可操作以从第一记录介质读出数据，并根据读出的数据执行打印。命令接收器适于从操作者接收用于在第二记录介质上执行第一记录介质中的数据备份的命令。当命令接收器接收到命令时，消息提供者可操作地提供用于提示操作者在第二记录介质的表面上执行打印的消息。

5. 发明授权

US07096873B2 Method for manufacturing a group III nitride compound semiconductor device 有权
标题翻译： III族氮化物半导体器件的制造方法
公开(公告)号：US07096873B2
公开(公告)日：2006-08-29
申请号：US09935699
申请日：2001-08-24
申请人： Toshiya Uemura , Naoki Nakajo
发明人： Toshiya Uemura , Naoki Nakajo
IPC分类号： B08B5/00
CPC分类号： H01L21/02046 , B08B7/0057 , H01L21/0273 , H01L21/3081 , H01L21/3086 , H01L33/0095 , Y10S438/906
摘要： A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.
摘要翻译：制造III族氮化物化合物半导体器件的方法包括用紫外线照射晶片的表面，从而从晶片的表面清洁抗蚀剂残留物，该表面包括III族氮化物化合物半导体。紫外线引起氧分子的反应，形成在表面具有强氧化能力的受激氧原子。

6. 发明授权

US08793590B2 Information processing apparatus, information processing method, and program 有权
标题翻译：信息处理装置，信息处理方法和程序
公开(公告)号：US08793590B2
公开(公告)日：2014-07-29
申请号：US13437255
申请日：2012-04-02
申请人： Naoki Nakajo
发明人： Naoki Nakajo
IPC分类号： G06F3/048 , G06Q10/10
CPC分类号： G06F3/048 , G06F21/6227 , G06Q10/109 , G06Q10/1093 , Y10S715/963
摘要： An event setting section sets calendars or accounts based on operation contents from an operation input receiving unit, and stores a list of the set calendars or accounts in a schedule database. In addition, the event setting section sets events in a calendar based on operation contents from the operation input receiving unit, and stores a list of the set events in the schedule database. An image correlation section stores image data supplied from an image input unit in an image database, and correlates (shares) the image data with the event list stored in the schedule database based on photographing information (photographing time, camera ID, and the like) accompanied by the image data.
摘要翻译：事件设置部分基于来自操作输入接收单元的操作内容设置日历或帐户，并将所设置的日历或帐户的列表存储在日程表数据库中。此外，事件设置部分基于来自操作输入接收单元的操作内容来设置日历中的事件，并将所设置的事件的列表存储在调度数据库中。图像相关部分将从图像输入单元提供的图像数据存储在图像数据库中，并且基于拍摄信息（拍摄时间，相机ID等）将图像数据与存储在调度数据库中的事件列表相关联（共享）伴随着图像数据。

7. 发明申请

US20120254785A1 INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM 有权
标题翻译：信息处理设备，信息处理方法和程序
公开(公告)号：US20120254785A1
公开(公告)日：2012-10-04
申请号：US13437255
申请日：2012-04-02
申请人： Naoki Nakajo
发明人： Naoki Nakajo
IPC分类号： G06F3/048
CPC分类号： G06F3/048 , G06F21/6227 , G06Q10/109 , G06Q10/1093 , Y10S715/963
摘要： An event setting section sets calendars or accounts based on operation contents from an operation input receiving unit, and stores a list of the set calendars or accounts in a schedule database. In addition, the event setting section sets events in a calendar based on operation contents from the operation input receiving unit, and stores a list of the set events in the schedule database. An image correlation section stores image data supplied from an image input unit in an image database, and correlates (shares) the image data with the event list stored in the schedule database based on photographing information (photographing time, camera ID, and the like) accompanied by the image data.
摘要翻译：事件设置部分基于来自操作输入接收单元的操作内容设置日历或帐户，并将所设置的日历或帐户的列表存储在日程表数据库中。此外，事件设置部分基于来自操作输入接收单元的操作内容来设置日历中的事件，并将所设置的事件的列表存储在调度数据库中。图像相关部分将从图像输入单元提供的图像数据存储在图像数据库中，并且基于拍摄信息（拍摄时间，相机ID等）将图像数据与存储在调度数据库中的事件列表相关联（共享）伴随着图像数据。

8. 发明授权

US08148736B2 Flip chip type light-emitting element 有权
标题翻译：倒装芯片型发光元件
公开(公告)号：US08148736B2
公开(公告)日：2012-04-03
申请号：US12222366
申请日：2008-08-07
申请人： Kosuke Yahata , Naoki Nakajo
发明人： Kosuke Yahata , Naoki Nakajo
IPC分类号： H01L27/15
CPC分类号： H01L33/387 , H01L33/44 , H01L33/46
摘要： In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.
摘要翻译：在本发明的倒装型发光元件中，n型接触电极14形成在以梳齿形状露出的n层11上，在整个表面上形成由ITO制成的透光电极15 在透光电极15上以规定的间隔形成p层13的上表面和20个焊盘电极16.焊盘电极16的平面形状具有从圆形中心部16a以十字形突出的四个分支16b 以及通过分支16b彼此连接的相邻的焊盘电极16。

9. 发明申请

US20060139410A1 Liquid discharge recording head and ink jet recording apparatus 失效
公开(公告)号：US20060139410A1
公开(公告)日：2006-06-29
申请号：US11358203
申请日：2006-02-22
申请人： Shogo Kawamura , Toshihiro Mori , Hisashi Fukai , Naoki Nakajo
发明人： Shogo Kawamura , Toshihiro Mori , Hisashi Fukai , Naoki Nakajo
IPC分类号： B41J2/05
CPC分类号： H05K3/361 , B41J2/14024 , B41J2/14072 , H05K3/328 , H05K2201/0367 , H05K2201/0397 , H05K2201/10977
摘要： A liquid discharge recording head includes a recording element with a discharge port for discharging liquid and an electrically connecting portion arranged adjacent to the discharge port and receiving an electric signal for controlling the discharge of the discharge port. The liquid discharge recording head further includes a flexible wiring substrate for covering at least a portion of the recording element. The flexible wiring substrate includes each of a device hole for exposing the discharge port and a bonding hole arranged facing the electrically connecting portion independently. The liquid discharge recording head further includes a sealing agent for covering at least a portion of the electrically connecting portion and filled to at least a portion of the bonding hole. Thus, a liquid discharge recording head that enhances recording performance and that has superior productivity while maintaining reliability of the recording performance is provided.

10. 发明授权

US08936950B2 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08936950B2
公开(公告)日：2015-01-20
申请号：US13636392
申请日：2011-03-14
申请人： Naoki Nakajo , Masao Kamiya , Akihiro Honma
发明人： Naoki Nakajo , Masao Kamiya , Akihiro Honma
IPC分类号： H01L21/00 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： To improve light emission efficiency and reliability.A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.
摘要翻译：提高发光效率和可靠性。在第二半导体层108的整个顶表面上形成透明导电膜10，并且在其上施加光刻胶。当去除与第一半导体层104的电极形成部分16对应的上表面上的光致抗蚀剂时，除去光致抗蚀剂以在要去除的部分的边界处逐渐变薄。使用剩余的光致抗蚀剂作为掩模对透明导电膜进行湿式蚀刻，以暴露第二半导体层的一部分。使用剩余的光致抗蚀剂和透明导电膜作为掩模进行干法蚀刻，以暴露形成第一半导体层的一部分的电极。在使用剩余光刻胶作为掩模的干蚀刻中曝光的透明导电膜的一部分被湿式蚀刻。剩下的光刻胶被消除。

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