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    • 2. 发明授权
    • Method of depositing metallic film by plasma CVD and storage medium
    • 通过等离子体CVD和存储介质沉积金属膜的方法
    • US08906471B2
    • 2014-12-09
    • US12934420
    • 2009-03-25
    • Shinya Okabe
    • Shinya Okabe
    • C23C16/00C23C16/44C23C16/50
    • C23C16/4404C23C16/4405C23C16/50
    • For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.
    • 为了沉积金属膜,重复进行以下步骤:在室内形成预涂膜的步骤; 将待处理的两个或更多个基板在其上沉积金属膜的步骤,将每个基板引入预涂室中,将基板放置在载物台上,在加热基板的同时供给处理气体以产生等离子体 处理气体,并通过等离子体CVD在基板上沉积金属膜; 以及在基板上的膜沉积完成之后,将清洁气体引入到室中以进行干洗的步骤。 在其中要处理的两个或更多个待处理衬底在其上沉积金属膜的步骤中,在该步骤的过程中在该阶段上形成导电膜一次或多次。
    • 3. 发明申请
    • METHOD OF DEPOSITING METALLIC FILM AND MEMORY MEDIUM
    • 沉积金属膜和记忆介质的方法
    • US20110086184A1
    • 2011-04-14
    • US12934420
    • 2009-03-25
    • Shinya Okabe
    • Shinya Okabe
    • C23C16/06C23C16/50
    • C23C16/4404C23C16/4405C23C16/50
    • For depositing a metallic film, the following steps are repeatedly conducted: a step in which a precoat film is formed on the inside of a chamber; a step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon by introducing each substrate into the precoated chamber, placing the substrate on the stage, feeding a treating gas while heating the substrate to generate a plasma of the treating gas, and depositing a metallic film on the substrate by plasma CVD; and a step in which after the film deposition on the substrates has been completed, a cleaning gas is introduced into the chamber to conduct dry cleaning. In the step in which two or more substrates to be treated are subjected to the deposition of a metallic film thereon, a conductive film is formed on the stage one or more times in the course of the step.
    • 为了沉积金属膜,重复进行以下步骤:在室内形成预涂膜的步骤; 将待处理的两个或更多个基板在其上沉积金属膜的步骤,将每个基板引入预涂室中,将基板放置在载物台上,在加热基板的同时供给处理气体以产生等离子体 处理气体,并通过等离子体CVD在基板上沉积金属膜; 以及在基板上的膜沉积完成之后,将清洁气体引入到室中以进行干洗的步骤。 在其中要处理的两个或更多个待处理衬底在其上沉积金属膜的步骤中,在该步骤的过程中在该阶段上形成导电膜一次或多次。