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1. 发明申请

US20100227062A1 METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM 有权
标题翻译：形成Ti基膜和储存介质的方法
公开(公告)号：US20100227062A1
公开(公告)日：2010-09-09
申请号：US12280044
申请日：2007-02-21
申请人： Kensaku Narushima , Satoshi Wakabayashi , Kunihiro Tada
发明人： Kensaku Narushima , Satoshi Wakabayashi , Kunihiro Tada
IPC分类号： C23C16/22
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译：在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗，气体进入腔室31。

2. 发明申请

US20070292598A1 Substrate Processing Method and Substrate Processing Apparatus 失效
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070292598A1
公开(公告)日：2007-12-20
申请号：US11667945
申请日：2006-04-04
申请人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
发明人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
IPC分类号： C23C16/46 , H01L21/02 , H01L21/285
CPC分类号： C23C16/46 , C23C16/52 , H01L21/67248 , H01L22/10
摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.
摘要翻译：公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

3. 发明申请

US20070257372A1 Method for Forming Ti Film and Tin Film, Contact Structure, Computer Readable Storing Medium and Computer Program 失效
标题翻译：形成Ti膜和锡膜的方法，接触结构，计算机可读存储介质和计算机程序
公开(公告)号：US20070257372A1
公开(公告)日：2007-11-08
申请号：US11547977
申请日：2005-04-08
申请人： Kunihiro Tada , Kensaku Narushima , Satoshi Wakabayashi
发明人： Kunihiro Tada , Kensaku Narushima , Satoshi Wakabayashi
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76846 , C23C16/0281 , C23C16/34 , H01J37/321 , H01L21/02063 , H01L21/28556 , H01L21/32051 , H01L21/76814 , H01L21/76856 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
摘要翻译：在作为底层的硅化镍膜的表面上进行清洁处理。然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。然后，将Ti膜氮化。然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。

4. 发明申请

US20050233093A1 Film formation method and apparatus utilizing plasma CVD 审中-公开
标题翻译：利用等离子体CVD的成膜方法和装置
公开(公告)号：US20050233093A1
公开(公告)日：2005-10-20
申请号：US11143718
申请日：2005-06-03
申请人： Kunihiro Tada , Hiroaki Yokoi , Satoshi Wakabayashi , Kensaku Narushima
发明人： Kunihiro Tada , Hiroaki Yokoi , Satoshi Wakabayashi , Kensaku Narushima
IPC分类号： C23C16/14 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/50 , H01L21/28 , H01L21/285 , H05H1/24 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译：在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。

5. 发明授权

US06537621B1 Method of forming a titanium film and a barrier film on a surface of a substrate through lamination 有权
标题翻译：通过层压在基板的表面上形成钛膜和阻挡膜的方法
公开(公告)号：US06537621B1
公开(公告)日：2003-03-25
申请号：US09473715
申请日：1999-12-29
申请人： Yasuo Kobayashi , Kunihiro Tada , Hideki Yoshikawa
发明人： Yasuo Kobayashi , Kunihiro Tada , Hideki Yoshikawa
IPC分类号： C23C1634
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28562 , H01L21/28568 , H01L21/76855 , H01L21/76856 , H01L21/76879
摘要： A method for forming a titanium film and a titanium nitride film on a surface of a substrate by lamination, by which contamination of the substrate due to the by-product is suppressed and the contact resistance of the titanium film is reduced. The method comprises the steps of forming a titanium film on the surface of the substrate using a first process gas containing TiCl4 and a reducing gas, subjecting the substrate to a plasma process using a second process gas containing N2 gas and a reducing gas, thereby decreasing Cl in the titanium film and nitriding the surface of the titanium film to form a nitride layer, and forming a barrier metal (e.g., a titanium nitride film) on the titanium film having the nitride layer. Thus, the titanium film and the titanium nitride film are formed on the substrate by lamination. The second process gas contains N2 gas in a ratio of 0.5 or lower with respect to the reducing gas.
摘要翻译：通过层叠在基板的表面上形成钛膜和氮化钛膜的方法，由此抑制由副产物引起的基板的污染并降低钛膜的接触电阻。该方法包括以下步骤：使用包含TiCl 4和还原气体的第一工艺气体在衬底的表面上形成钛膜，使用含有N 2气体和还原气体的第二工艺气体对衬底进行等离子体处理，从而减少 Cl并使钛膜的表面氮化以形成氮化物层，并在具有氮化物层的钛膜上形成阻挡金属（例如，氮化钛膜）。因此，通过层压在基板上形成钛膜和氮化钛膜。第二处理气体相对于还原气体含有0.5以下的N 2气体。

6. 发明授权

US06197674B1 CVD-Ti film forming method 失效
标题翻译： CVD-Ti成膜方法
公开(公告)号：US06197674B1
公开(公告)日：2001-03-06
申请号：US09112640
申请日：1998-07-09
申请人： Hideki Yoshikawa , Yasuo Kobayashi , Kunihiro Tada
发明人： Hideki Yoshikawa , Yasuo Kobayashi , Kunihiro Tada
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , C23C16/08 , H01L21/28568
摘要： A method of forming a CVD-Ti film includes the steps of loading a Si wafer into a chamber, setting an interior of the chamber at a predetermined reduced-pressure atmosphere, introducing TiCl4 gas, H2 gas, and Ar gas into the chamber, and generating a plasma of the introduced gas in the chamber to form a Ti film in a hole formed in an SiO2 film on the wafer. A wafer temperature is set to 400° to 800°, a supplied power is set to 100 W to 300 W, an internal chamber pressure is set to 0.5 Torr to 3.0 Torr, a flow rate ratio of TiCl4 gas to a sum of H2 gas and Ar gas is 1:100 to 1:300, and a flow rate ratio of H2 gas to Ar gas is 1:1 to 2:1.
摘要翻译：形成CVD-Ti膜的方法包括以下步骤：将Si晶片装载到腔室中，将腔室的内部设置在预定的减压气氛下，将TiCl 4气体，H 2气体和Ar气体引入室中;以及在室中产生引入气体的等离子体，以在晶片上的SiO 2膜形成的孔中形成Ti膜。将晶片温度设定为400°〜800°，供给功率设定为100W〜300W，内部室压设定为0.5Torr〜3.0Torr，TiCl4气体与H2气体的流量比 Ar气体为1：100〜1：300，H2气体与Ar气体的流量比为1：1〜2：1。

7. 发明授权

US08124168B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08124168B2
公开(公告)日：2012-02-28
申请号：US11667945
申请日：2006-04-04
申请人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
发明人： Kunihiro Tada , Hiroyuki Miyashita , Isao Gunji
IPC分类号： C23C16/46
CPC分类号： C23C16/46 , C23C16/52 , H01L21/67248 , H01L22/10
摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.
摘要翻译：公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

8. 发明授权

US06841203B2 Method of forming titanium film by CVD 失效
标题翻译：通过CVD形成钛膜的方法
公开(公告)号：US06841203B2
公开(公告)日：2005-01-11
申请号：US10216398
申请日：2002-08-12
申请人： Kunihiro Tada , Hayashi Otsuki
发明人： Kunihiro Tada , Hayashi Otsuki
IPC分类号： C23C16/04 , C23C16/08 , H01L21/768 , H05H1/24
CPC分类号： H01L21/76843 , C23C16/045 , C23C16/08 , H01L21/76855
摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.
摘要翻译：通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积Ti膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

9. 发明授权

US08106335B2 Processing apparatus and heater unit 失效
标题翻译：加工设备和加热器单元
公开(公告)号：US08106335B2
公开(公告)日：2012-01-31
申请号：US11631485
申请日：2005-07-01
申请人： Seishi Murakami , Kunihiro Tada
发明人： Seishi Murakami , Kunihiro Tada
IPC分类号： H05B3/68
CPC分类号： C23C16/46 , C23C16/4586 , H01L21/67109 , H05B3/143
摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).
摘要翻译：处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。

10. 发明申请

US20100240216A1 FILM FORMATION METHOD AND APPARATUS UTILIZING PLASMA CVD 审中-公开
标题翻译：电影形成方法和使用等离子体CVD的装置
公开(公告)号：US20100240216A1
公开(公告)日：2010-09-23
申请号：US12789516
申请日：2010-05-28
申请人： Kunihiro TADA , Hiroaki Yokoi , Satoshi Wakabayashi , Kensaku Narushima
发明人： Kunihiro TADA , Hiroaki Yokoi , Satoshi Wakabayashi , Kensaku Narushima
IPC分类号： H01L21/3205
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译：在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。

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