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1. 发明授权

US5723877A Photoelectric conversion apparatus 失效
公开(公告)号：US5723877A
公开(公告)日：1998-03-03
申请号：US476030
申请日：1995-06-07
申请人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
发明人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
IPC分类号： H01L27/146 , H01L29/06 , H01L31/075 , H01L31/105 , H01L31/107 , H01L39/00 , H01L29/165 , H01L29/04 , H01L31/07
CPC分类号： H01L31/1075 , H01L27/14609 , H01L27/14681 , H01L31/035245
摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.

2. 发明授权

US5414275A Photoelectric converting device and image processing apparatus utilizing the same 失效
标题翻译：光电转换装置及利用其的图像处理装置
公开(公告)号：US5414275A
公开(公告)日：1995-05-09
申请号：US161441
申请日：1993-12-06
申请人： Shigetoshi Sugawa , Ihachiro Gofuku
发明人： Shigetoshi Sugawa , Ihachiro Gofuku
IPC分类号： H01L27/146 , H01L31/0376 , H01L31/10 , H01L31/105 , H01L31/20 , H01L27/14
CPC分类号： H01L31/03762 , H01L27/14681 , H01L31/1055 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous P- or N-semiconductor layer in contact with the I-type layer and an amorphous P- or N-semiconductor layer containing microcrystalline structure.
摘要翻译：具有PIN结构的光电转换装置包括非晶I型半导体层和定位成夹着I型层的电荷注入阻挡层。电荷注入阻挡层中的至少一个包括与I型层接触的无定形P-或N-半导体层和含有微晶结构的无定形P-或N-半导体层。

3. 发明授权

US6127692A Photoelectric conversion apparatus 失效
标题翻译：光电转换装置
公开(公告)号：US6127692A
公开(公告)日：2000-10-03
申请号：US141723
申请日：1993-10-26
申请人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
发明人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
IPC分类号： H01L27/146 , H01L29/06 , H01L31/075 , H01L31/105 , H01L31/107 , H01L39/00
CPC分类号： H01L31/1075 , H01L27/14609 , H01L27/14681 , H01L31/035245
摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.
摘要翻译：本发明的光电转换装置具有高灵敏度和低噪声，并且可以形成为在相对低的温度下具有大的面积，因为它具有由非单晶材料形成的吸光层（310），用于吸收光和产生光载流子，以及用于乘以由光吸收层产生的光载流子的乘法层（301,303,305,307,309）。

4. 发明授权

US5245201A Photoelectric converting device and image processing apparatus utilizing the same 失效
标题翻译：光电转换装置和图像处理装置
公开(公告)号：US5245201A
公开(公告)日：1993-09-14
申请号：US815029
申请日：1991-12-31
申请人： Hiraku Kozuka , Shigetoshi Sugawa , Ihachiro Gofuku
发明人： Hiraku Kozuka , Shigetoshi Sugawa , Ihachiro Gofuku
IPC分类号： H01L27/146 , H01L31/10 , H04N1/028
CPC分类号： H01L27/14681
摘要： A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.

5. 发明授权

US06190911B1 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06190911B1
公开(公告)日：2001-02-20
申请号：US08670148
申请日：1996-06-27
申请人： Ihachiro Gofuku
发明人： Ihachiro Gofuku
IPC分类号： H01L21265
CPC分类号： H01L29/66954 , H01L21/28525 , H01L21/31155 , H01L29/66272
摘要： A method for fabricating a semiconductor device having a wiring part connected via an opening portion formed in an insulting film on a semiconductor region to the semiconductor region. The wiring part includes a polycrystalline semiconductor layer and a metal or metal silicide on the semiconductor layer. A polycrystalline semiconductor layer is deposited over the opening portion of the semiconductor region. First and second impurities are respectively ion injected into the polycrystalline semiconductor layer, wherein the ion injecting range of the first impurities is longer than that of the second impurities, thereby forming a high concentration region at least on a surface side of the polycrystalline semiconductor layer. Following the ion injection of the first and second impurities, a heat treatment is conducted to grow crystals of the polycrystalline semiconductor layer. After the heat treatment, a metal or a metal silicide is deposited on the polycrystalline layer using a low melting point method.
摘要翻译：一种半导体器件的制造方法，其具有通过形成在半导体区域上的绝缘膜上的开口部连接到半导体区域的布线部。布线部分包括半导体层上的多晶半导体层和金属或金属硅化物。多晶半导体层沉积在半导体区域的开口部分上。第一和第二杂质分别离子注入多晶半导体层，其中第一杂质的离子注入范围比第二杂质的离子注入范围长，从而至少在多晶半导体层的表面侧形成高浓度区域。在离子注入第一和第二杂质之后，进行热处理以生长多晶半导体层的晶体。在热处理之后，使用低熔点法在多晶层上沉积金属或金属硅化物。

6. 发明授权

US5666217A Liquid crystal device 失效
标题翻译：液晶装置
公开(公告)号：US5666217A
公开(公告)日：1997-09-09
申请号：US509929
申请日：1995-08-01
申请人： Shuzo Kaneko , Ihachiro Gofuku , Etsur o Kishi , Makoto Kojima , Katsutoshi Nakamura
发明人： Shuzo Kaneko , Ihachiro Gofuku , Etsur o Kishi , Makoto Kojima , Katsutoshi Nakamura
IPC分类号： G02F1/1333 , G02F1/1337 , G02F1/141
CPC分类号： G02F1/1337 , G02F1/133711 , G02F1/133719 , G02F1/133723 , G02F1/141 , G02F2001/133397
摘要： A liquid crystal device is constituted by a pair of oppositely disposed substrates including a first substrate having a uniaxial alignment characteristic and a second substrate having a non-uniaxial alignment characteristic and a liquid crystal disposed between the first and second substrates. The first and second substrates are controlled to have surface potentials providing a difference therebetween of less than 50 mV in terms of an absolute value at their liquid crystal-contacting surfaces. As a result, the liquid crystal device is provided with an improved symmetry of switching threshold while retaining a good liquid crystal alignment characteristic.
摘要翻译：液晶装置由一对相对设置的基板构成，该基板包括具有单轴取向特性的第一基板和具有非单轴取向特性的第二基板和设置在第一和第二基板之间的液晶。控制第一和第二衬底以使表面电位在它们的液晶接触表面处具有小于50mV的绝对值。结果，液晶装置在保持良好的液晶取向特性的同时具有改善的开关阈值对称性。

7. 发明授权

US4916304A Image recording device having a conductive layer formed below a light receiving window 失效
标题翻译：具有形成在光接收窗口下方的导电层的图像记录装置
公开(公告)号：US4916304A
公开(公告)日：1990-04-10
申请号：US290805
申请日：1988-12-23
申请人： Satoshi Itabashi , Toshihiro Saika , Ihachiro Gofuku
发明人： Satoshi Itabashi , Toshihiro Saika , Ihachiro Gofuku
IPC分类号： H01L27/14 , H01L31/0216 , H01L31/09 , H04N1/031
CPC分类号： H04N1/0315 , H01L31/02164 , H01L31/09 , H01L31/095 , H04N1/0313 , H04N1/0316 , H04N1/0318 , H04N3/1512 , H04N3/1581 , H04N2201/02497 , H04N2201/03112
摘要： A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; an insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.
摘要翻译：具有电绝缘，透光性基板的光电传感器; 形成在所述基板上的不透明导电层; 形成在导电层上的绝缘层，以及形成在绝缘层上的用于接收光并提供与其对应的电流的半导体层。一对电极形成为与半导体层接触并在其间限定光接收窗口。电极形成为基本上不覆盖导电层。在光传感器的非读取期间，向导电层提供对应于极性的偏置电压和限定半导体层的电流的载流子的量和绝对值小的电压Va。

8. 发明授权

US07301269B2 Image display apparatus provided with an ion pump assembly arranged within an external container 失效
标题翻译：具有布置在外部容器内的离子泵组件的图像显示装置
公开(公告)号：US07301269B2
公开(公告)日：2007-11-27
申请号：US11210766
申请日：2005-08-25
申请人： Ihachiro Gofuku , Masaru Kamio , Hisanori Tsuda , Yasue Sato , Yoshiyuki Shimada , Hiromasa Mitani , Kazuyuki Seino , Takashi Nishimura
发明人： Ihachiro Gofuku , Masaru Kamio , Hisanori Tsuda , Yasue Sato , Yoshiyuki Shimada , Hiromasa Mitani , Kazuyuki Seino , Takashi Nishimura
IPC分类号： H01J17/24 , H01J19/70 , H01J61/26
CPC分类号： H01J7/18 , H01J7/14 , H01J9/385 , H01J29/845 , H01J29/94 , H01J31/127 , H01J41/12 , H01J2329/943
摘要： Provided is an image display apparatus, including: a vacuum container which includes an electron source and an anode electrode opposed to the electron source; and an ion pump arranged so as to communicate through the vacuum container, in which: an ion pump container is composed of a non-electroconductive material; and an electroconductive film is formed on an external surface of the vacuum container on a side on which the ion pump container is mounted or on an internal surface of the ion pump container. The image display apparatus achieves: a reduction in weight of the ion pump; an improvement in compatibility to the vacuum container; and the prevention of an adverse effect of discharge inside the ion pump on image display.
摘要翻译：提供一种图像显示装置，包括：真空容器，其包括电子源和与电子源相对的阳极电极; 以及离子泵，其配置成通过真空容器连通，其中：离子泵容器由非导电材料构成; 并且在真空容器的安装有离子泵容器的一侧的外表面上或离子泵容器的内表面上形成导电膜。图像显示装置实现：离子泵的重量减少; 改善与真空容器的相容性; 并防止离子泵内的放电的不良影响对图像显示。

9. 发明授权

US07091662B2 Image display device and method of manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07091662B2
公开(公告)日：2006-08-15
申请号：US10624637
申请日：2003-07-23
申请人： Mitsutoshi Hasegawa , Ihachiro Gofuku , Masaki Tokioka , Kazuya Shigeoka , Tokutaka Miura
发明人： Mitsutoshi Hasegawa , Ihachiro Gofuku , Masaki Tokioka , Kazuya Shigeoka , Tokutaka Miura
IPC分类号： H01J19/70
CPC分类号： H01J9/385 , H01J29/94 , H01J2209/385
摘要： In an image display device having in an airtight container an electron source and an image display member that receives electrons from the electron source, an evaporating getter and a non-evaporating getter are stacked in the airtight container. This makes it possible to maintain the vacuum level in the airtight container. The image display device thus obtains a prolonged life and a stable display operation.
摘要翻译：在气密容器中具有从电子源接收电子的电子源和图像显示部件的图像显示装置中，将蒸发吸气剂和非蒸发吸气剂堆叠在气密容器中。这使得可以在气密容器中保持真空度。因此，图像显示装置获得延长的使用寿命和稳定的显示操作。

10. 发明授权

US5453629A Photoelectric conversion device having at least one step-back layer 失效
标题翻译：具有至少一个后退层的光电转换装置
公开(公告)号：US5453629A
公开(公告)日：1995-09-26
申请号：US150983
申请日：1993-11-12
申请人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
发明人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
IPC分类号： H01L27/146 , H01L31/107 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/3745 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14681 , H01L31/1075 , Y10S438/90 , Y10S438/936
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.
摘要翻译：光电转换装置包括多个光电转换单元和信号输出单元。信号输出单元具有至少一个用于存储由光电转换装置产生的电信号的存储装置。扫描装置扫描由电转换单元产生的电信号，并且读取装置读出由光电转换单元产生的电信号。每个光电转换单元包括光吸收层和倍增层。乘法层包括至少一个后乘结构，其乘以由吸收光产生的载流子，其中禁带宽度从最小到最大宽度连续变化。

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