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1. 发明授权

US5084355A Laminar structure comprising organic material and inorganic material 失效
标题翻译：包含有机材料和无机材料的层压结构
公开(公告)号：US5084355A
公开(公告)日：1992-01-28
申请号：US336788
申请日：1989-04-13
申请人： Shigeru Takahashi , Takuya Fukuda , Toshiya Satoh , Seikichi Tanno , Michio Ohue , Naohiro Momma , Yutaka Misawa
发明人： Shigeru Takahashi , Takuya Fukuda , Toshiya Satoh , Seikichi Tanno , Michio Ohue , Naohiro Momma , Yutaka Misawa
IPC分类号： G11B7/243 , G11B7/244 , G11B7/253 , G11B7/2533 , G11B7/254 , G11B7/257 , G11B7/2578 , G11B7/26 , H01L23/14 , H01L23/498 , H05K3/38
CPC分类号： H05K3/388 , G11B7/2533 , G11B7/257 , G11B7/26 , H01L23/145 , H01L23/49866 , G11B2007/24306 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B7/2578 , H01L2924/0002 , Y10S428/90 , Y10S428/901 , Y10T428/31678
摘要： A laminar structure comprising an organic material and an inorganic material; for example, a coating structure on an organic substrate comprising an organic material on which an inorganic film must be formed and a method of producing the structure, a structure which is suitable for increasing the reliability of an optical disk and a method of producing this, a wiring structure on an organic substrate comprising the organic material on which electric wiring must be formed and a method of producing this, and a structure suitable for increasing the reliability of a semiconductor integrated circuit device and a method of producing this. In order to provide a laminar structure which exhibits a high degree of reliability with respect to prevention of cracks or separation and which comprises an organic material and an inorganic material and a method of producing this structure and a device which utilizes this structure, the present invention provides a laminar structure on an organic substrate comprising the organic substrate comprising an organic material and a thin film which is caused to adhere to the surface of the organic substrate and which comprises an inorganic material a second element which produces a metal bonding or covalent bonding with the first element that forms the thin film being contained in the organic substrate in the vicinity of the surface thereof.

2. 发明授权

US5433788A Apparatus for plasma treatment using electron cyclotron resonance 失效
标题翻译：使用电子回旋共振等离子体处理的装置
公开(公告)号：US5433788A
公开(公告)日：1995-07-18
申请号：US131519
申请日：1993-10-04
申请人： Yasuhiro Mochizuki , Naohiro Momma , Shigeru Takahashi , Takuya Fukuda , Noboru Suzuki , Tadasi Sonobe , Kiyoshi Chiba , Kazuo Suzuki
发明人： Yasuhiro Mochizuki , Naohiro Momma , Shigeru Takahashi , Takuya Fukuda , Noboru Suzuki , Tadasi Sonobe , Kiyoshi Chiba , Kazuo Suzuki
IPC分类号： C23C16/511 , H01J37/32 , H05H1/46 , C23C16/50
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678 , H05H1/46
摘要： A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.
摘要翻译：用于在真空容器中的基板上形成薄膜的等离子体处理装置包括可位于真空容器内部或外部的磁场发生器和微波源。磁场强度是可控制的，使得在衬底附近限定电子回旋共振（ECR）区域。磁场发生器可以布置成等离子体和反应性气体引入口位于ECR区域的微波引入侧，衬底位于ECR区域的相对侧。或者，可以将气体引入口定位成使得反应气体被引入到ECR区域或衬底上。

3. 发明授权

US4876983A Plasma operation apparatus 失效
标题翻译：等离子体操作装置
公开(公告)号：US4876983A
公开(公告)日：1989-10-31
申请号：US145371
申请日：1988-01-19
申请人： Takuya Fukuda , Yasuhiro Mochizuki , Naohiro Momma , Shigeru Takahashi , Noboru Suzuki , Tadasi Sonobe , Kiyosi Chiba , Kazuo Suzuki
发明人： Takuya Fukuda , Yasuhiro Mochizuki , Naohiro Momma , Shigeru Takahashi , Noboru Suzuki , Tadasi Sonobe , Kiyosi Chiba , Kazuo Suzuki
IPC分类号： C23C16/511 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

4. 发明授权

US4794445A Semiconductor device 失效
公开(公告)号：US4794445A
公开(公告)日：1988-12-27
申请号：US78999
申请日：1987-07-29
申请人： Hideo Homma , Yutaka Misawa , Naohiro Momma
发明人： Hideo Homma , Yutaka Misawa , Naohiro Momma
IPC分类号： H01L29/73 , H01L21/20 , H01L21/331 , H01L21/74 , H01L21/762 , H01L29/732 , H01L23/08 , H01L23/54
CPC分类号： H01L21/2007 , H01L21/74 , H01L21/76264 , H01L21/76297 , H01L29/7325 , H01L21/76275 , H01L21/76281
摘要： A semiconductor device has a structure in which two semiconductor substrates are coupled to each other through a semiconductor oxide film and a metal silicide film, and a semiconductor element, for example, a bi-polar transistor is formed in the semiconductor substrate on the metal silicide film side, whereby a metal silicide layer having a high melting point is provided beneath one region of the bi-polar transistor for example, an n.sup.+ buried collector layer and in ohmic contact with the n.sup.+ buried collector layer. An electrical isolation between the adjacent semiconductor elements is made by an insulating layer.

5. 发明授权

US4735916A Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors 失效
标题翻译：制造具有掺杂多晶硅导体的双极晶体管和绝缘栅场效应晶体管的方法
公开(公告)号：US4735916A
公开(公告)日：1988-04-05
申请号：US13252
申请日：1987-02-10
申请人： Hideo Homma , Yutaka Misawa , Naohiro Momma
发明人： Hideo Homma , Yutaka Misawa , Naohiro Momma
IPC分类号： H01L27/06 , H01L21/033 , H01L21/3213 , H01L21/331 , H01L21/336 , H01L21/8234 , H01L21/8249 , H01L29/73 , H01L29/732 , H01L29/78 , H01L21/385
CPC分类号： H01L29/66272 , H01L21/0337 , H01L21/32137 , H01L21/8249 , H01L29/41783 , H01L29/6659 , H01L29/78 , H01L29/66545
摘要： A method of fabricating a semiconductor device includes the steps of: forming at least one first semiconductor region of a first conductivity type and at least one second semiconductor region of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film, an intermediate layer which is a silicon nitride film, and a top layer which is a polycrystalline silicon film doped with one of arsenic and phosphorus; forming a first insulating layer on the side wall of the three-layer film; forming a second polycrystalline silicon film on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystalline silicon film into the second polycrystalline silicon film; selectively etching off the first polycrystalline silicon film and that portion of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer at least on the surface of the portion of the second polycrystalline silicon film which exists on the second semiconductor region; removing the silicon nitride film and the conductive film which exist on the second semiconductor region, while using the second insulating layer as a mask, to form an aperture; and forming a third polycrystalline silicone film so that the aperture is covered by the third polycrystalline silicon film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在第一导电类型的半导体层的主表面中形成第一导电类型的至少一个第一半导体区域和第二导电类型的至少一个第二半导体区域; 在第一和第二半导体区域中的每一个上形成具有期望形状的三层膜，该三层膜由作为导电膜的底层，作为氮化硅膜的中间层和顶层，其是掺杂有砷和磷之一的多晶硅膜; 在三层膜的侧壁上形成第一绝缘层; 在整个表面上形成第二多晶硅膜，并将砷和磷中的一种从第一多晶硅膜扩散到第二多晶硅膜中; 选择性地蚀刻出第一多晶硅膜和其中砷和磷之一已经扩散的第二多晶硅膜的那部分; 至少在所述第二半导体区域上存在的所述第二多晶硅膜的所述部分的表面上形成第二绝缘层; 在使用第二绝缘层作为掩模的同时，除去存在于第二半导体区域上的氮化硅膜和导电膜，以形成孔径; 以及形成第三多晶硅膜，使得所述孔被所述第三多晶硅膜覆盖。

6. 发明申请

US20050132814A1 Semiconductor pressure sensor and pressure sensing device 审中-公开
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US20050132814A1
公开(公告)日：2005-06-23
申请号：US11049872
申请日：2005-02-04
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, there by sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film. This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供了一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过密封蚀刻通道，通过CVD技术等沉积氧化硅膜。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

7. 再颁专利

USRE34158E Complementary semiconductor device 失效
公开(公告)号：USRE34158E
公开(公告)日：1993-01-12
申请号：US744514
申请日：1991-08-13
申请人： Atsuo Watanabe , Takahiro Nagano , Takahide Ikeda , Naohiro Momma , Ryuichi Saito
发明人： Atsuo Watanabe , Takahiro Nagano , Takahide Ikeda , Naohiro Momma , Ryuichi Saito
IPC分类号： H01L21/762 , H01L21/763 , H01L21/8238 , H01L27/06 , H01L27/092
CPC分类号： H01L27/0928 , H01L21/76224 , H01L21/763 , H01L21/823892 , H01L27/0623
摘要： A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the wall from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.

8. 发明授权

US4879041A Process for producing ultra-pure water and process for using said ultra-pure water 失效
标题翻译：制造超纯水的方法和使用所述超纯水的方法
公开(公告)号：US4879041A
公开(公告)日：1989-11-07
申请号：US172583
申请日：1988-03-24
申请人： Hideaki Kurokawa , Akira Yamada , Yasuo Koseki , Harumi Matsuzaki , Katsuya Ebara , Sankichi Takahashi , Hiroaki Yoda , Nobuatsu Hayashi , Isao Okouchi , Yukio Hishinuma , Naohiro Momma
发明人： Hideaki Kurokawa , Akira Yamada , Yasuo Koseki , Harumi Matsuzaki , Katsuya Ebara , Sankichi Takahashi , Hiroaki Yoda , Nobuatsu Hayashi , Isao Okouchi , Yukio Hishinuma , Naohiro Momma
IPC分类号： B01D3/06 , C02F1/04
CPC分类号： B01D61/364 , B01D3/06 , C02F1/045 , Y10S210/90
摘要： The present invention relates to a process for producing ultra-pure water, an apparatus for producing said ultra-pure water and a process for using the ultra-pure water produced according to said process. More particularly, the present invention relates to a process for producing ultra-pure water which comprises boiling a raw water to vaporize off the volatile components from the raw water, subsequently generating steam from the water, contacting the steam with a hydrophobic, porous, gas-permeable and liquid-impermeable membrane to make the steam permeate the membrane, and then condensing the steam, as well as to an apparatus for producing said ultra-pure water and a process for using said ultra-pure water.

9. 发明授权

US4862240A Complementary semiconductor device 失效
标题翻译：互补半导体器件
公开(公告)号：US4862240A
公开(公告)日：1989-08-29
申请号：US85260
申请日：1987-08-12
申请人： Atsuo Watanabe , Takahiro Nagano , Takahide Ikeda , Naohiro Momma , Ryuichi Saito
发明人： Atsuo Watanabe , Takahiro Nagano , Takahide Ikeda , Naohiro Momma , Ryuichi Saito
IPC分类号： H01L29/78 , H01L21/74 , H01L21/762 , H01L21/763 , H01L21/8238 , H01L27/06 , H01L27/092
CPC分类号： H01L21/76224 , H01L21/74 , H01L21/76205 , H01L21/763 , H01L21/823892 , H01L27/092 , H01L27/0623
摘要： A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried region which is located at the bottom of the well region and separates an active region in the well from the substrate region. The isolation region is deeper than the buried region. The well-to-well isolation is enhanced by the combination of the buried region and the deep dielectric isolation region. Packing density and the high speed operation can also be improved.
摘要翻译：一种单片互补半导体器件，包括由从表面延伸到衬底区域的电介质隔离区隔开的n型和p型阱区。阱区域包括高度掺杂的掩埋区域，其位于阱区域的底部并且将阱中的有源区域与衬底区域分离。隔离区域比掩埋区域深。通过掩埋区域和深介电隔离区域的组合增强了井对阱隔离。包装密度和高速运转也可以提高。

10. 发明授权

US5883403A Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US5883403A
公开(公告)日：1999-03-16
申请号：US720017
申请日：1996-09-27
申请人： Katsumi Ishikawa , Katsuaki Saito , Yutaka Sato , Atsuo Watanabe , Shuji Katoh , Naohiro Momma
发明人： Katsumi Ishikawa , Katsuaki Saito , Yutaka Sato , Atsuo Watanabe , Shuji Katoh , Naohiro Momma
IPC分类号： H01L29/32 , H01L29/74 , H01L31/111
CPC分类号： H01L29/74 , H01L29/32 , H01L29/861 , Y10S257/913
摘要： In a semiconductor device, such as a diode and thyristor, having at least one pn junction between a pair of main surfaces, a first main electrode formed on the surface of one of the main surfaces and a second main electrode formed on the surface of the other one of the main surfaces, a semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of the carrier density in the conduction state can be flattened, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.
摘要翻译：在诸如二极管和晶闸管之类的半导体器件中，在一对主表面之间具有至少一个pn结，形成在一个主表面的表面上的第一主电极和形成在主表面上的第二主电极主表面中的另一个，形成半导体晶格缺陷，使得其晶格缺陷密度在从第一主电极到第二主电极的方向上逐渐增加。由于载流子密度在导通状态下的分布可以变平，所以可以大大降低反向恢复电荷，而不会导致导通状态电压增加。

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