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1. 发明授权

US5801427A Semiconductor device having a polycide structure 失效
标题翻译：具有多晶硅结构的半导体器件
公开(公告)号：US5801427A
公开(公告)日：1998-09-01
申请号：US873027
申请日：1997-06-11
申请人： Shigeru Shiratake , Kaoru Motonami , Satoshi Hamamoto
发明人： Shigeru Shiratake , Kaoru Motonami , Satoshi Hamamoto
IPC分类号： H01L21/027 , H01L21/28 , H01L21/336 , H01L21/768 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/94 , H01L31/062
CPC分类号： H01L29/42376 , H01L21/0276 , H01L21/28123 , H01L21/76889 , H01L29/4933 , H01L29/6659 , H01L29/7833
摘要： In a semiconductor device having a polycide structure located on a stepped portion, halation during formation of a resist pattern is prevented, and oxidation of an upper surface of a high-melting-point metal silicide layer is prevented during formation of an interlayer insulating film on the polycide structure. In this semiconductor device, an upper layer which is formed of one layer selected from the group consisting of an amorphous silicon layer, a polycrystalline silicon layer, a TiN layer and a TiW layer is formed on the high-melting-point metal silicide layer forming the polycide structure. This effectively suppresses reflection of light beams by the upper layer located at the stepped portion during exposure for forming the resist pattern on the upper layer. Thereby, formation of a notch at the resist pattern is prevented, and the resist pattern is accurately formed to have a designed pattern. The upper layer made of the amorphous silicon layer or polycrystalline silicon layer prevents formation of an oxide layer at an upper surface of the high-melting-point metal silicide layer due to oxydation by Oxygen carried to the inside of the CVD furnace from the outside during formation of an interlayer insulating film covering the polycide structure.
摘要翻译：在具有位于阶梯部分上的多晶硅结构的半导体器件中，防止形成抗蚀剂图案期间的卤化，并且在层间绝缘膜形成期间防止高熔点金属硅化物层的上表面的氧化多晶硅结构。在该半导体器件中，在高熔点金属硅化物层形成中形成由选自非晶硅层，多晶硅层，TiN层和TiW层的一层形成的上层多晶硅结构。这在上层形成抗蚀剂图案的曝光期间有效地抑制位于台阶部分的上层的光束的反射。由此，防止在抗蚀剂图案处形成切口，并且将抗蚀剂图形精确地形成为具有设计图案。由非晶硅层或多晶硅层制成的上层防止在高熔点金属硅化物层的上表面形成氧化物层，这是由于氧化从CVD外部向内部送入CVD炉内形成覆盖多晶硅化物结构的层间绝缘膜。

2. 发明授权

US6033971A Semiconductor device having an element isolating oxide film and method of manufacturing the same 有权
标题翻译：具有元件隔离氧化物膜的半导体器件及其制造方法
公开(公告)号：US6033971A
公开(公告)日：2000-03-07
申请号：US160379
申请日：1998-09-25
申请人： Kaoru Motonami , Shigeru Shiratake , Hiroshi Matsuo , Yuichi Yokoyama , Kenji Morisawa , Ritsuko Gotoda , Takaaki Murakami , Satoshi Hamamoto , Kenji Yasumura , Yasuyoshi Itoh
发明人： Kaoru Motonami , Shigeru Shiratake , Hiroshi Matsuo , Yuichi Yokoyama , Kenji Morisawa , Ritsuko Gotoda , Takaaki Murakami , Satoshi Hamamoto , Kenji Yasumura , Yasuyoshi Itoh
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762 , H01L21/8234
CPC分类号： H01L21/823475 , H01L21/76205 , H01L21/7621 , H01L21/76216
摘要： There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode. This prevents shaving of the gate insulating film and the underlying substrate surface.
摘要翻译：提供了一种半导体器件，其包括具有良好的上部平坦度的元件隔离氧化物膜及其制造方法。假设tG表示栅电极层6的厚度，从栅极绝缘膜5的上表面到元件隔离氧化膜4的最厚部分的上表面的高度tU和在上表面之间限定的锐角θi 元件隔离氧化膜4和栅极绝缘膜的表面被设置在由公式{θi，tU + 5443 0 = 0.82tG}表示的范围内。因此，未蚀刻部分不保留在用于图形化稍后形成的栅极电极层的蚀刻步骤。这防止了栅电极的短路。由于元件隔离氧化物膜具有改善的平坦度，所以在图案化栅极电极的步骤中可以减少活性区域中的过蚀刻量。这防止了栅极绝缘膜和下面的衬底表面的剃刮。

3. 发明授权

US5831323A Semiconductor device having an element isolating oxide film and method of manufacturing the same 失效
公开(公告)号：US5831323A
公开(公告)日：1998-11-03
申请号：US601662
申请日：1996-02-14
申请人： Kaoru Motonami , Shigeru Shiratake , Hiroshi Matsuo , Yuichi Yokoyama , Kenji Morisawa , Ritsuko Gotoda , Takaaki Murakami , Satoshi Hamamoto , Kenji Yasumura , Yasuyoshi Itoh
发明人： Kaoru Motonami , Shigeru Shiratake , Hiroshi Matsuo , Yuichi Yokoyama , Kenji Morisawa , Ritsuko Gotoda , Takaaki Murakami , Satoshi Hamamoto , Kenji Yasumura , Yasuyoshi Itoh
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762 , H01L21/8234 , H01L29/00
CPC分类号： H01L21/823475 , H01L21/76205 , H01L21/7621 , H01L21/76216
摘要： There are provided a semiconductor device, which includes an element isolating oxide film having a good upper flatness, and a method of manufacturing the same. Assuming that t.sub.G represents a thickness of a gate electrode layer 6, a height t.sub.U to an upper surface of a thickest portion of element isolating oxide film 4 from an upper surface of a gate insulating film 5 and an acute angle .theta.i defined between the upper surfaces of element isolating oxide film 4 and gate insulating film are set within ranges expressed by the formula of {.theta.i, t.sub.U .linevert split.0.ltoreq..theta.i.ltoreq.56.6.degree., 0.ltoreq.t.sub.U .ltoreq.0.82t.sub.G }. Thereby, an unetched portion does not remain at an etching step for patterning the gate electrode layer to be formed later. This prevents short-circuit of the gate electrode. Since the element isolating oxide film has the improved flatness, a quantity of overetching in an active region can be reduced at a step of patterning the gate electrode. This prevents shaving of the gate insulating film and the underlying substrate surface.

4. 发明授权

US06408622B1 Hydraulic drive device 有权
标题翻译：液压驱动装置
公开(公告)号：US06408622B1
公开(公告)日：2002-06-25
申请号：US09622957
申请日：2000-08-24
申请人： Yasutaka Tsuruga , Takashi Kanai , Junya Kawamoto , Satoshi Hamamoto , Yasuharu Okazaki , Yukiaki Nagao
发明人： Yasutaka Tsuruga , Takashi Kanai , Junya Kawamoto , Satoshi Hamamoto , Yasuharu Okazaki , Yukiaki Nagao
IPC分类号： F15B1306
CPC分类号： E02F9/2225 , E02F9/2207 , E02F9/2285 , E02F9/2296 , F15B11/0406 , F15B11/162 , F15B11/165 , F15B2211/20553 , F15B2211/20584 , F15B2211/255 , F15B2211/30505 , F15B2211/30535 , F15B2211/3111 , F15B2211/3144 , F15B2211/31576 , F15B2211/50527 , F15B2211/5153 , F15B2211/6054 , F15B2211/63 , F15B2211/6313 , F15B2211/6316 , F15B2211/7135
摘要： A hydraulic drive system having a swing control system, includes a pump control unit for controlling a pump delivery rate such that a pump delivery pressure is held a predetermined value higher than a maximum load pressure among a plurality of actuators. Pressure compensating valves are each constructed to set, as a target compensation differential pressure, a differential pressure between a delivery pressure of a hydraulic pump and a maximum load pressure among the actuators. A pressure compensating valve for a swing section is given such a load dependent characteristic that when the load pressure rises, the target compensation differential pressure is reduced, the load dependent characteristic being set so as to provide a flow rate characteristic simulating constant-horsepower control of a swing motor.
摘要翻译：具有摆动控制系统的液压驱动系统包括：泵控制单元，用于控制泵输送速率，使得泵输送压力保持在多个致动器中比最大负载压力高的预定值。压力补偿阀各自被构造成将作为目标补偿压差的液压泵的输送压力和致动器中的最大负载压力之间的压力设定为压力补偿阀。用于摆动部分的压力补偿阀具有这样的负载依赖特性：当负载压力升高时，目标补偿压差降低，负载相关特性被设定为提供模拟恒功率控制的流量特性摆动马达

5. 发明授权

US09252305B2 Photovoltaic device, manufacturing method thereof, and photovoltaic module 有权
标题翻译：光伏器件及其制造方法以及光伏模块
公开(公告)号：US09252305B2
公开(公告)日：2016-02-02
申请号：US13979272
申请日：2012-03-02
申请人： Satoshi Hamamoto
发明人： Satoshi Hamamoto
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/0236 , H01L31/068 , H01L31/18
CPC分类号： H01L31/03529 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.
摘要翻译：光电器件包括在一个表面侧包括杂质扩散层的第一导电类型的硅衬底; 光接收面侧电极，其包括电连接到所述杂质扩散层的多个栅电极; 以及形成在所述硅基板的另一个表面侧的背面侧电极，其中所述杂质扩散层包括第一杂质扩散层和第二杂质扩散层，并且其中所述第一杂质扩散层形成为使得垂直于栅电极的长度方向为长度方向，第一杂质扩散层与带区的面积比为50％以下。

6. 发明授权

US06082106A Hydraulic device 有权
标题翻译：液压装置
公开(公告)号：US06082106A
公开(公告)日：2000-07-04
申请号：US174842
申请日：1998-10-19
申请人： Satoshi Hamamoto
发明人： Satoshi Hamamoto
IPC分类号： E02F9/22 , F15B11/16 , F15B11/05
CPC分类号： E02F9/2267 , E02F9/2225 , E02F9/2271 , E02F9/2296 , F15B11/165 , F15B2211/20553 , F15B2211/251 , F15B2211/30505 , F15B2211/30535 , F15B2211/3055 , F15B2211/30555 , F15B2211/3111 , F15B2211/3144 , F15B2211/31529 , F15B2211/324 , F15B2211/50536 , F15B2211/513 , F15B2211/5158 , F15B2211/528 , F15B2211/55 , F15B2211/57 , F15B2211/6054 , F15B2211/7135 , F15B2211/88
摘要： A hydraulic device comprises a variable displacement pump, a plurality of hydraulic actuators, a plurality of directional valves capable of controlling the delivery oil flowing into each of the actuators, a plurality of pressure compensation valves which compensate the pressures of respective directional valves, and a delivery oil flow rate varying means capable of controlling the pump delivery. At least one of the pressure compensation valves decreases its output flow to a particular actuator according to an increase in the loaded pressure of the particular actuator. With this arrangement, if the loaded pressure of the particular actuator suddenly changes, the loaded pressure attenuates to ensure stable operation of the hydraulic device. Further, the stable operation is fee of hunting for both low-load actuators and high load actuators, regardless of an independent operation or a compound operation.
摘要翻译：液压装置包括可变排量泵，多个液压致动器，能够控制流入每个致动器的输送油的多个方向阀，补偿各个换向阀的压力的多个压力补偿阀，以及输送油流量变化装置，其能够控制泵输送。根据特定致动器的负载压力的增加，至少一个压力补偿阀将其输出流量减小到特定的致动器。通过这种布置，如果特定致动器的负载压力突然变化，则负载压力衰减以确保液压装置的稳定运行。此外，无论独立操作还是复合操作，稳定操作都是低负载致动器和高负载致动器的打猎费。

7. 发明授权

US5397713A Method of producing thin-film solar cell 失效
标题翻译：制造薄膜太阳能电池的方法
公开(公告)号：US5397713A
公开(公告)日：1995-03-14
申请号：US993021
申请日：1992-12-18
申请人： Satoshi Hamamoto , Mikio DeGuchi
发明人： Satoshi Hamamoto , Mikio DeGuchi
IPC分类号： H01L21/02 , H01L31/04 , H01L31/048 , H01L31/18
CPC分类号： H01L31/048 , H01L31/0445 , H01L31/1804 , H01L31/1872 , H01L31/1896 , Y02E10/547 , Y02P70/521 , Y10S148/135
摘要： In a method of producing a thin-film solar cell, a graphite sheet in which the breaking stress in a thickness direction is smaller than the breaking stress in a direction perpendicular to the thickness direction is adhered to a heat resistant substrate, a semiconductor thin film is formed on the graphite sheet in a high temperature process, a second substrate for supporting the semiconductor thin film is adhered to the semiconductor thin film, and the graphite sheet is broken by applying a mechanical stress to the heat resistant substrate and the second substrate. The semiconductor thin film is reliably supported by the heat resistant substrate during high temperature processing and easily removed from the heat resistant substrate by breaking the graphite sheet. In addition, since the graphite sheet has an anisotropic breaking stress, fragments of the graphite sheet remaining on the surface of the semiconductor thin film are easily removed. As a result, a high quality thin film solar cell is produced reliably at low cost.
摘要翻译：在制造薄膜太阳能电池的方法中，在厚度方向上的断裂应力小于在与厚度方向垂直的方向上的断裂应力的石墨片粘附到耐热基板上，半导体薄膜在高温工艺中形成在石墨片上，用于支撑半导体薄膜的第二基板粘附到半导体薄膜上，并且通过对耐热基板和第二基板施加机械应力来破坏石墨片。半导体薄膜在耐高温处理时被耐热基板可靠地支撑，并且通过破坏石墨片而容易地从耐热基板上去除。此外，由于石墨片具有各向异性的断裂应力，因此易于除去残留在半导体薄膜的表面上的石墨片的碎片。结果，以低成本可靠地生产高品质的薄膜太阳能电池。

8. 发明申请

US20140302629A1 MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE AND MANUFACTURING APPARATUS FOR PHOTOVOLTAIC DEVICE 有权
标题翻译：光伏器件的制造方法和光伏器件的制造设备
公开(公告)号：US20140302629A1
公开(公告)日：2014-10-09
申请号：US14364855
申请日：2012-02-01
申请人： Satoshi Hamamoto
发明人： Satoshi Hamamoto
IPC分类号： H01L31/18 , H01L21/306 , H01L21/67 , H01L21/225
CPC分类号： H01L31/18 , H01L21/223 , H01L21/225 , H01L21/30604 , H01L21/30608 , H01L21/67063 , H01L21/6708 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.
摘要翻译：一种制造方法包括通过在硅基基板的表面中扩散杂质元素来形成杂质扩散层的步骤; 以及蚀刻步骤，在所述硅基基板的第一表面侧的至少一部分中除去所述杂质扩散层，其中所述蚀刻步骤包括蚀刻液供给步骤，所述蚀刻流体供给步骤在所述第一表面侧供给从供给位置流入硅基基板的外缘部的蚀刻流体，以及与第一表面侧相反的硅基基板的第二表面侧的空气供给工序根据蚀刻流体供给步骤中的蚀刻流体的供给，沿与蚀刻流体相同的方向供给空气。

9. 发明授权

US06810912B2 Spool valve with decreased fluid force acting on spool 有权
标题翻译：阀芯上的流体力减小的阀芯
公开(公告)号：US06810912B2
公开(公告)日：2004-11-02
申请号：US10446114
申请日：2003-05-28
申请人： Yuuji Ogura , Satoshi Hamamoto , Zenzou Hamada , Satoshi Okude
发明人： Yuuji Ogura , Satoshi Hamamoto , Zenzou Hamada , Satoshi Okude
IPC分类号： F15B1304
CPC分类号： F15B13/0402 , F16K27/041 , F16K27/048 , Y10T137/8671
摘要： A spool valve comprises a slidable spool, and through displacement of the spool a supply port of the valve is allowed to communicate with one of the load ports of the valve while the other load port is allowed to communicate with a corresponding one of return ports of the valve. The spool is provided with a portion, the outside diameter of which gradually increases, at least on the other load port side from the center of a central concave portion of the spool. The outside diameter gradually increasing portion decreases fluid force which acts against an operating force of the spool when the valve is activated.
摘要翻译：滑阀包括可滑动的阀芯，并且通过阀芯的移动，允许阀的供应端口与阀的一个负载端口连通，而允许另一个负载端口与相应的一个返回端口阀门。阀芯设置有至少在从卷轴的中心凹部的中心的另一个装载口侧的外径逐渐增加的部分。外径逐渐增加的部分减小了当阀被启动时抵抗阀芯的操作力的流体力。

10. 发明授权

US09246043B2 Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device 有权
标题翻译：光伏器件制造方法及光伏器件制造装置
公开(公告)号：US09246043B2
公开(公告)日：2016-01-26
申请号：US14364855
申请日：2012-02-01
申请人： Satoshi Hamamoto
发明人： Satoshi Hamamoto
IPC分类号： H01L21/306 , H01L31/18 , H01L21/223 , H01L31/068 , H01L21/225 , H01L21/67
CPC分类号： H01L31/18 , H01L21/223 , H01L21/225 , H01L21/30604 , H01L21/30608 , H01L21/67063 , H01L21/6708 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.
摘要翻译：一种制造方法包括通过在硅基基板的表面中扩散杂质元素来形成杂质扩散层的步骤; 以及蚀刻步骤，在所述硅基基板的第一表面侧的至少一部分中除去所述杂质扩散层，其中所述蚀刻步骤包括蚀刻流体供给步骤，所述蚀刻流体供应步骤在所述第一表面侧上，从供给位置流入硅基基板的外缘部的蚀刻流体，以及与第一表面侧相反的硅基基板的第二表面侧的空气供给工序根据蚀刻流体供给步骤中的蚀刻流体的供给，沿与蚀刻流体相同的方向供给空气。

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