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1. 发明授权

US4929572A Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith 失效
标题翻译：砷的掺杂剂，其制备方法和掺杂半导体的方法
公开(公告)号：US4929572A
公开(公告)日：1990-05-29
申请号：US380616
申请日：1989-07-17
申请人： Shigeaki Saito , Toshiharu Matsueda , Yoshihiro Kubota , Masaaki Iguchi
发明人： Shigeaki Saito , Toshiharu Matsueda , Yoshihiro Kubota , Masaaki Iguchi
IPC分类号： H01L21/22 , H01L21/223
CPC分类号： H01L21/223 , H01L21/2225 , Y10S252/95
摘要： The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily prepared and has various advantages over conventional elementary arsenic powder or a shaped body of silicon arsenide alone in respect of the high mechanical strength of the dopant body and absence of the problem of environmental contamination.
摘要翻译：用于掺杂半导体衬底（例如硅晶片）的砷的掺杂剂体是包含砷化硅，二氧化硅和任选地以特定比例的氧化砷的粉末混合物的烧结体。相对于掺杂剂体的高机械强度和不存在环境污染的问题，掺杂剂体可以容易地制备并且具有优于常规的基本砷粉末或单独的砷化硅成形体的各种优点。

2. 发明授权

US5234742A Pellicle for lithography 失效
标题翻译：光刻胶片
公开(公告)号：US5234742A
公开(公告)日：1993-08-10
申请号：US902407
申请日：1992-06-19
申请人： Etsuo Hatano , Yoshihiro Kubota , Akira Yamamoto , Toyohisa Sakurada , Masaaki Iguchi
发明人： Etsuo Hatano , Yoshihiro Kubota , Akira Yamamoto , Toyohisa Sakurada , Masaaki Iguchi
IPC分类号： G03F1/62
CPC分类号： G03F1/62 , Y10T428/24777 , Y10T428/31663 , Y10T428/31678
摘要： A pellicle for lithography based on the exposure method especially adapted for lithographic lights having wave lengths of 500 nm or smaller, characterized in that the pellicle film is made of a high polymer organic silicon compound, preferably of a general molecular formula: ##STR1## where R.sup.1, R.sup.2, and R.sup.3 are the same or different alkyl groups having one to eight carbon atoms, and n is an integer between 100 and 40,000.
摘要翻译：一种基于曝光方法的用于光刻的防护薄膜组件，特别适用于波长为500nm或更小的光刻胶，其特征在于防护薄膜由高分子有机硅化合物制成，优选具有以下通式： R1，R2和R3是具有1-8个碳原子的相同或不同的烷基，n是100至40,000的整数。

3. 发明授权

US08614505B2 Semiconductor device with heat spreader 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US08614505B2
公开(公告)日：2013-12-24
申请号：US13596708
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/34
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

4. 发明申请

US20120322209A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US20120322209A1
公开(公告)日：2012-12-20
申请号：US13596758
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L21/56
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

5. 发明授权

US08263478B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08263478B2
公开(公告)日：2012-09-11
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

6. 发明授权

US08227290B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227290B2
公开(公告)日：2012-07-24
申请号：US11976026
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
发明人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/186 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.
摘要翻译：一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。

7. 发明授权

US08227289B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227289B2
公开(公告)日：2012-07-24
申请号：US11976020
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/186 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate, and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, such that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer.
摘要翻译：一种单晶硅太阳能电池的制造方法，包括以下步骤：将离子注入单晶硅衬底; 对所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底的表面中的至少一个进行表面活化处理; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作粘合表面; 对离子注入层施加冲击; 并且在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶层的分层表面硅层。

8. 发明授权

US08119903B2 Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08119903B2
公开(公告)日：2012-02-21
申请号：US11984182
申请日：2007-11-14
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , H01L31/0216 , B05D5/12
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/03921 , H01L31/056 , H01L31/0682 , H01L31/1892 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.
摘要翻译：公开了一种单晶硅太阳能电池，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

9. 发明授权

US08115141B2 Heating element 有权
标题翻译：加热元件
公开(公告)号：US08115141B2
公开(公告)日：2012-02-14
申请号：US11783580
申请日：2007-04-10
申请人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
发明人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
IPC分类号： F27D11/00 , C23C16/00
CPC分类号： H01L21/67103 , H01L21/67098 , H05B3/143 , H05B2203/003
摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10−2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4. There can be provided a heating element in which a corrosion-resistant layer whose nitrogen gas permeability, resistivity, or hardness are controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.
摘要翻译：公开了一种加热元件10，其包括：至少一个耐热底座件1; 导电层3，其具有形成在耐热基底构件上的加热器图案3a; 在导电层上形成具有绝缘性的保护层4; 以及氮气渗透率为1×10 -2 cm 2 / sec以下的耐腐蚀层4p，或由保护层4上形成的含有掺杂剂的化合物构成。可以提供一种加热元件，其中腐蚀氮气渗透性，电阻率或硬度被控制的耐热层形成在保护层上，即使在高温环境和腐蚀性气体环境下腐蚀性气体也难以透过，腐蚀性降低导电层，特别是电源端子部分，可以避免和附加地，即使当具有卡盘图案并且具有长的使用寿命并且能够在低成本。

10. 发明授权

US08106290B2 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08106290B2
公开(公告)日：2012-01-31
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

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