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1. 发明授权

US08614505B2 Semiconductor device with heat spreader 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US08614505B2
公开(公告)日：2013-12-24
申请号：US13596708
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/34
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

2. 发明申请

US20120322209A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US20120322209A1
公开(公告)日：2012-12-20
申请号：US13596758
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L21/56
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

3. 发明申请

US20100024222A1 BLADE MEMBER 有权
标题翻译：叶子会员
公开(公告)号：US20100024222A1
公开(公告)日：2010-02-04
申请号：US12449508
申请日：2008-03-27
申请人： Koichiro Akari , Hiroshi Ohtsubo
发明人： Koichiro Akari , Hiroshi Ohtsubo
IPC分类号： B26B21/60 , B26B9/00
CPC分类号： B26B21/60
摘要： In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr is formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N is formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer is formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer including the non-nitrided layer and the nitrided layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.
摘要翻译：在剃刀刀片的切削刃中，含有Ti，Al和Cr的非氮化层形成在作为涂层的一部分的基板的相对表面上。作为涂层的氮化层的一部分，在非氮化层的相对表面上形成含有Ti，Al，Cr和N的剩余层。作为涂层的氮化层的一部分，在剩余层的相对面上形成含有Ti，Al，Cr和N的表面层。在表层的相对表面上形成有含有Cr和Al的结合层的氟树脂层。包括非氮化层和氮化层的涂层进一步改善了切割边缘，提高了切割刃的切割性能，并且保持了提高的切割性能以提高切割刃的耐久性。

4. 发明授权

US5613849A Dental care material and manufacturing method 失效
标题翻译：牙科护理材料及制造方法
公开(公告)号：US5613849A
公开(公告)日：1997-03-25
申请号：US378450
申请日：1995-01-25
申请人： Naoki Tanaka , Hiroshi Ohtsubo , Michio Ito
发明人： Naoki Tanaka , Hiroshi Ohtsubo , Michio Ito
IPC分类号： A61C7/14 , A61C7/00 , A61C7/28 , A61C8/00 , A61F2/00 , A61K6/04 , A61L27/06 , B22F3/22 , C22C1/04 , C22C5/02 , A61K6/00
CPC分类号： B22F3/225 , A61L27/06 , B22F3/22 , C22C1/0458 , A61C7/14 , A61F2310/00023 , B22F2998/00 , Y10S75/955
摘要： A dental care material comprising a titanium sintered body has no harmful effects on the human body and easily produces products with complicated shapes having a high level of strength. A mixture of titanium powder and an organic binder is injection molded and subjected to binder removal and sintering processes to form a bracket for orthodontic or dental implant materials. Pure titanium powder, with an average granule diameter of no more than 40 .mu.m, a carbon content by weight of no more than 0.3%, and an oxygen content by weight of no more than 0.6%, preferably is used to produce a titanium sintered body of combined carbon and oxygen content by weight of no more than 1.0%. Colored layers can be formed on the surface of the titanium sintered body using various methods as needed.
摘要翻译：包含钛烧结体的牙科保养材料对人体没有有害影响，容易产生具有高水平强度的复杂形状的产品。将钛粉末和有机粘合剂的混合物注射成型并进行粘合剂去除和烧结工艺以形成用于正牙或牙科植入材料的支架。纯钛粉末，平均颗粒直径不超过40μm，碳含量不超过0.3％，氧含量不超过0.6％，优选用于制备钛烧结组合碳和氧含量不超过1.0％。可以根据需要使用各种方法在钛烧结体的表面上形成有色层。

5. 发明授权

US4964907A Sintered bodies and production process thereof 失效
标题翻译：烧结体及其制造方法
公开(公告)号：US4964907A
公开(公告)日：1990-10-23
申请号：US393765
申请日：1989-08-14
申请人： Yoshisato Kiyota , Junichi Ohta , Hiroshi Ohtsubo , Shigeaki Takajo
发明人： Yoshisato Kiyota , Junichi Ohta , Hiroshi Ohtsubo , Shigeaki Takajo
IPC分类号： B22F3/10 , B22F3/22 , H01F1/22
CPC分类号： B22F3/225 , B22F3/101 , B22F3/22 , H01F1/22 , A61F2002/30968 , B22F2998/00
摘要： A process is provided for the production of a sintered body. The process includes the following consecutive steps: (i) mixing and kneading one or more metal powders and/or one or more alloy powder with a binder into a compound, said metal and alloy powders having an average particle size not greater than 30 .mu.m, (ii) injection-molding the compound into a green body; (iii) debinding the green body to form a debound body; and (iv) subjecting the debound body to first-stage sintering at 1,050.degree.-1,250.degree. C. in a reducing or reduced-pressure atmosphere and then to second-stage sintering at a temperature in a range of 1,100.degree.-1,400.degree. C. which is higher than that of the first-stage sintering. This process can provide sintered Ti bodies and sintered magnetic bodies of the Fe-Si type, which have a density ratio of at least 95%.

6. 发明授权

US08621757B2 Coated cutting edge of a blade member 有权
标题翻译：叶片构件的涂覆刀刃
公开(公告)号：US08621757B2
公开(公告)日：2014-01-07
申请号：US12449508
申请日：2008-03-27
申请人： Koichiro Akari , Hiroshi Ohtsubo
发明人： Koichiro Akari , Hiroshi Ohtsubo
IPC分类号： B26B21/54 , B21K11/00 , G11B5/64 , B32B9/00 , B32B19/00
CPC分类号： B26B21/60
摘要： In a cutting edge of a razor blade, a non-nitrided layer containing Ti, Al, and Cr formed on opposite surfaces of a base plate as a portion of a coating layer. A remaining layer containing Ti, Al, Cr, and N formed on opposite surfaces of the non-nitrided layer as a portion of a nitrided layer of the coating layer. A surface layer containing Ti, Al, Cr, and N formed on opposite surfaces of the remaining layer as a portion of the nitrided layer of the coating layer. A fluororesin layer formed on opposite surfaces of the surface layer with a bonding layer containing Cr and Al in between. The coating layer further improves the cutting edge, enhances cutting performance of the cutting edge, and maintains the enhanced cutting performance to improve the durability of the cutting edge.
摘要翻译：在剃刀刀片的切割边缘中，包含Ti，Al和Cr的非氮化层形成在作为涂层的一部分的基板的相对表面上。形成在作为涂层的氮化层的一部分的非氮化层的相对表面上的含有Ti，Al，Cr和N的剩余层。形成在作为涂层的氮化层的一部分的剩余层的相对表面上的Ti，Al，Cr和N的表面层。在表面层的相对表面上形成有含有Cr和Al的结合层的氟树脂层。涂层进一步改善切割刃，提高切割刃的切割性能，并且保持提高的切割性能以提高切割刃的耐久性。

7. 发明授权

US08614119B2 Semiconductor device with heat spreader 有权
公开(公告)号：US08614119B2
公开(公告)日：2013-12-24
申请号：US13596758
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L21/00
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

8. 发明申请

US20110316131A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US20110316131A1
公开(公告)日：2011-12-29
申请号：US13023962
申请日：2011-02-09
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/495
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

9. 发明授权

US07781259B2 Method of manufacturing a semiconductor using a rigid substrate 有权
标题翻译：使用刚性基板制造半导体的方法
公开(公告)号：US07781259B2
公开(公告)日：2010-08-24
申请号：US11516584
申请日：2006-09-07
申请人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
发明人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
摘要翻译：在制造本发明的半导体器件的方法中，在树脂封装时，在衬底的表面上支撑一个或多个半导体元件并被夹持在封装模具的上模具和下模具之间的刚性衬底是使得与封装模具的通气端相对应的基板的通气端边缘部分的厚度小于基板的其它部分的厚度。将基板设置在封装模具中，并将树脂注入到上模和基板之间的空腔中，以用树脂封装半导体元件。

10. 发明申请

US20070010046A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070010046A1
公开(公告)日：2007-01-11
申请号：US11516584
申请日：2006-09-07
申请人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
发明人： Youhei Nagahama , Katsunori Wako , Yuichi Asano , Masanori Takahashi , Haruo Kojima , Masamichi Fujimoto , Hiroshi Ohtsubo , Yuki Yasuda
IPC分类号： H01L21/00
CPC分类号： H01L21/565 , H01L2924/0002 , H01L2924/00
摘要： In a method of manufacturing a semiconductor device of the invention, a rigid substrate which supports one or more semiconductor elements on a surface of the substrate and is clamped between an upper mold and a lower mold of an encapsulation mold at a time of resin encapsulation is provided, so that a vent-end edge portion of the substrate corresponding to a vent end of the encapsulation mold has a thickness smaller than a thickness of other portions of the substrate. The substrate is disposed in the encapsulation mold, and resin is injected into a cavity between the upper mold and the substrate to encapsulate the semiconductor elements with the resin.
摘要翻译：在制造本发明的半导体器件的方法中，在树脂封装时，在衬底的表面上支撑一个或多个半导体元件并被夹持在封装模具的上模具和下模具之间的刚性衬底是使得与封装模具的通气端相对应的衬底的通气端边缘部分的厚度小于衬底的其它部分的厚度。将基板设置在封装模具中，并将树脂注入到上模和基板之间的空腔中，以用树脂封装半导体元件。

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