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1. 发明授权

US08115141B2 Heating element 有权
标题翻译：加热元件
公开(公告)号：US08115141B2
公开(公告)日：2012-02-14
申请号：US11783580
申请日：2007-04-10
申请人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
发明人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
IPC分类号： F27D11/00 , C23C16/00
CPC分类号： H01L21/67103 , H01L21/67098 , H05B3/143 , H05B2203/003
摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10−2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4. There can be provided a heating element in which a corrosion-resistant layer whose nitrogen gas permeability, resistivity, or hardness are controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.
摘要翻译：公开了一种加热元件10，其包括：至少一个耐热底座件1; 导电层3，其具有形成在耐热基底构件上的加热器图案3a; 在导电层上形成具有绝缘性的保护层4; 以及氮气渗透率为1×10 -2 cm 2 / sec以下的耐腐蚀层4p，或由保护层4上形成的含有掺杂剂的化合物构成。可以提供一种加热元件，其中腐蚀氮气渗透性，电阻率或硬度被控制的耐热层形成在保护层上，即使在高温环境和腐蚀性气体环境下腐蚀性气体也难以透过，腐蚀性降低导电层，特别是电源端子部分，可以避免和附加地，即使当具有卡盘图案并且具有长的使用寿命并且能够在低成本。

2. 发明申请

US20070241095A1 Heating element 有权
标题翻译：加热元件
公开(公告)号：US20070241095A1
公开(公告)日：2007-10-18
申请号：US11783580
申请日：2007-04-10
申请人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
发明人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
IPC分类号： F27D11/00
CPC分类号： H01L21/67103 , H01L21/67098 , H05B3/143 , H05B2203/003
摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10−2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4. There can be provided a heating element in which a corrosion-resistant layer whose nitrogen gas permeability, resistivity, or hardness are controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.
摘要翻译：公开了一种加热元件10，其包括：至少一个耐热底座件1; 具有形成在耐热基体上的加热器图案3a的导电层3; 在导电层上形成具有绝缘性的保护层4; 以及氮气渗透率为1×10 -2 cm 2 / sec以下的耐腐蚀层4p，或者由在保护层上形成的含有掺杂剂的化合物构成第4层。可以提供一种加热元件，其中在保护层上形成氮气渗透性，电阻率或硬度的耐腐蚀层，即使在高温环境下也难以将腐蚀性气体透过并且可以避免腐蚀性气体，并且可以避免由于导电层，特别是电源端子部分的腐蚀而导致的劣化，并且另外，即使当具有卡盘图案也能够实现作为静电卡盘的高功能，并且具有使用寿命长，能够以低成本生产。

3. 发明授权

US07952054B2 Heating element 失效
标题翻译：加热元件
公开(公告)号：US07952054B2
公开(公告)日：2011-05-31
申请号：US11783581
申请日：2007-04-10
申请人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
发明人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
IPC分类号： F27D11/00 , C23C16/00
CPC分类号： H01L21/67103 , H05B3/143
摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p that is an oxide having an oxygen amount of stoichiometric ratio or less formed on the protection layer. There can be provided a heating element in which a corrosion-resistant layer whose resistivity or hardness is controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.
摘要翻译：公开了一种加热元件10，其包括：至少一个耐热底座件1; 导电层3，其具有形成在耐热基底构件上的加热器图案3a; 在导电层上形成具有绝缘性的保护层4; 以及作为在保护层上形成的具有化学计量比的氧的量的氧化物的耐腐蚀层4p。可以提供一种加热元件，其中在保护层上形成电阻率或硬度被控制的耐腐蚀层，即使在高温环境和腐蚀性气体的环境下腐蚀性气体难以透过，由此，能够避免由于导电层，特别是电源端子部分的腐蚀而导致的劣化，另外即使具有卡盘图案也能够实现作为静电卡盘的高功能，并且具有长的使用寿命并且是能够以低成本生产。

4. 发明申请

US20070241096A1 Heating element 失效
标题翻译：加热元件
公开(公告)号：US20070241096A1
公开(公告)日：2007-10-18
申请号：US11783581
申请日：2007-04-10
申请人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
发明人： Noboru Kimura , Yoshihiro Kubota , Waichi Yamamura , Shoji Kano
IPC分类号： F27D11/00
CPC分类号： H01L21/67103 , H05B3/143
摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p that is an oxide having an oxygen amount of stoichiometric ratio or less formed on the protection layer. There can be provided a heating element in which a corrosion-resistant layer whose resistivity or hardness is controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.
摘要翻译：公开了一种加热元件10，其包括：至少一个耐热底座件1; 具有形成在耐热基体上的加热器图案3a的导电层3; 在导电层上形成具有绝缘性的保护层4; 以及作为形成在保护层上的具有化学计量比的氧量的氧化物的耐腐蚀层4p。可以提供一种加热元件，其中在保护层上形成电阻率或硬度被控制的耐腐蚀层，即使在高温环境和腐蚀性气体的环境下腐蚀性气体难以透过，由此，能够避免由于导电层，特别是电源端子部分的腐蚀而导致的劣化，另外即使具有卡盘图案也能够实现作为静电卡盘的高功能，并且具有长的使用寿命，并且是能够以低成本生产。

5. 发明授权

US08829397B2 Corrosion-resistant multilayer ceramic member 有权
标题翻译：耐腐蚀多层陶瓷构件
公开(公告)号：US08829397B2
公开(公告)日：2014-09-09
申请号：US12285108
申请日：2008-09-29
申请人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
发明人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
IPC分类号： H05B3/68 , C23C16/00 , H01L21/683 , H02N13/00 , H01L21/687 , H05B3/14 , H01L21/67
CPC分类号： H01L21/6831 , H01L21/67103 , H01L21/6833 , H01L21/68757 , H02N13/00 , H05B3/143
摘要： The present invention relates to a corrosion-resistant multilayer ceramic member consisting at least of: a ceramic support substrate; an electrode layer formed on the ceramic support substrate; a power-supply member connected to the electrode layer; an insulating protection layer formed on the ceramic support substrate to cover the electrode layer; and a ceramic protection substrate of which at least a part is provided on the insulating protection layer. Thereby, there is provided a long-life corrosion-resistant multilayer ceramic member excellent in corrosion resistance even when exposed to a corrosive gas.
摘要翻译：本发明涉及一种耐腐蚀多层陶瓷构件，其至少包括：陶瓷支撑基板; 形成在所述陶瓷支撑基板上的电极层; 连接到所述电极层的电源构件; 形成在所述陶瓷支撑基板上以覆盖所述电极层的绝缘保护层; 以及陶瓷保护基板，其至少一部分设置在绝缘保护层上。由此，即使在暴露于腐蚀性气体的情况下，也能够提供耐腐蚀性优异的长寿命耐腐蚀性的多层陶瓷部件。

6. 发明申请

US20100003510A1 Corrosion-resistant multilayer ceramic member 审中-公开
标题翻译：耐腐蚀多层陶瓷构件
公开(公告)号：US20100003510A1
公开(公告)日：2010-01-07
申请号：US12457781
申请日：2009-06-22
申请人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
发明人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
IPC分类号： B32B7/00
CPC分类号： H01L21/6831 , H01L21/67103 , Y10T428/26 , Y10T428/263 , Y10T428/264 , Y10T428/265
摘要： The present invention is a corrosion-resistant multilayer ceramic member including at least: a ceramic substrate, an electrode layer formed on the ceramic substrate, a feeding member that supplies electricity to the electrode layer, and a protection layer that prevents corrosion; wherein the electrode layer is formed on one surface or both surfaces of the ceramic substrate, the feeding member is connected with the electrode layer, the protection layer is formed with a thickness of 0.02 mm or above and 10 mm or less on that surface of the ceramic substrate where the electrode layer is formed so as to cover the electrode layer, and the protection layer contains any one of silicon oxide, rare-earth oxide, aluminum nitride, and aluminum oxide as a main component. Hereby, there is provided a corrosion-resistant multilayer ceramic member that has excellent corrosion resistance and a long life duration even when exposed to a corrosive gas.
摘要翻译：本发明是一种耐腐蚀性多层陶瓷构件，至少包括：陶瓷基板，形成在陶瓷基板上的电极层，向电极层供电的进给构件和防止腐蚀的保护层; 其中所述电极层形成在所述陶瓷基板的一个表面或两个表面上，所述馈送构件与所述电极层连接，所述保护层在所述表面上形成为0.02mm以上且10mm以下的厚度陶瓷基板，其中形成电极层以覆盖电极层，并且保护层包含氧化硅，稀土氧化物，氮化铝和氧化铝中的任一种作为主要成分。因此，提供了即使暴露于腐蚀性气体时也具有优异的耐腐蚀性和长寿命的耐腐蚀性多层陶瓷构件。

7. 发明申请

US20090107635A1 Corrosion-resistant multilayer ceramic member 有权
标题翻译：耐腐蚀多层陶瓷构件
公开(公告)号：US20090107635A1
公开(公告)日：2009-04-30
申请号：US12285108
申请日：2008-09-29
申请人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
发明人： Shoji Kano , Waichi Yamamura , Yoshihiro Kubota
IPC分类号： H01L21/302 , H01L21/30
CPC分类号： H01L21/6831 , H01L21/67103 , H01L21/6833 , H01L21/68757 , H02N13/00 , H05B3/143
摘要： The present invention relates to a corrosion-resistant multilayer ceramic member consisting at least of: a ceramic support substrate; an electrode layer formed on the ceramic support substrate; a power-supply member connected to the electrode layer; an insulating protection layer formed on the ceramic support substrate to cover the electrode layer; and a ceramic protection substrate of which at least a part is provided on the insulating protection layer. Thereby, there is provided a long-life corrosion-resistant multilayer ceramic member excellent in corrosion resistance even when exposed to a corrosive gas.
摘要翻译：本发明涉及一种耐腐蚀多层陶瓷构件，其至少包括：陶瓷支撑基板; 形成在所述陶瓷支撑基板上的电极层; 连接到所述电极层的电源构件; 形成在所述陶瓷支撑基板上以覆盖所述电极层的绝缘保护层; 以及陶瓷保护基板，其至少一部分设置在绝缘保护层上。由此，即使在暴露于腐蚀性气体的情况下，也能够提供耐腐蚀性优异的长寿命耐腐蚀性的多层陶瓷部件。

8. 发明授权

US08614505B2 Semiconductor device with heat spreader 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US08614505B2
公开(公告)日：2013-12-24
申请号：US13596708
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L23/34
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

9. 发明申请

US20120322209A1 SEMICONDUCTOR DEVICE WITH HEAT SPREADER 有权
标题翻译：带散热器的半导体器件
公开(公告)号：US20120322209A1
公开(公告)日：2012-12-20
申请号：US13596758
申请日：2012-08-28
申请人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
发明人： Tomoyuki Fukuda , Yoshihiro Kubota , Hiroshi Ohtsubo , Yuichi Asano
IPC分类号： H01L21/56
CPC分类号： H01L23/4334 , H01L21/561 , H01L23/3128 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01074 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2924/00 , H01L2924/00012 , H01L2924/20752 , H01L2224/05599
摘要： A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.
摘要翻译： BGA型半导体器件包括：具有布线和电极的衬底; 设置在所述基板上的具有矩形平面形状的半导体元件和沿着所述半导体元件的每一侧设置的多个电极; 将半导体元件上的电极与基板上的电极连接的多条导线; 散热构件，设置在所述基板上，覆盖所述半导体元件，并且具有形成在与所述半导体元件的每一侧形成的所述电极连接的所述多根导线的顶点部分的区域中形成的开口; 以及用于覆盖和密封半导体元件和散热构件的密封树脂构件。

10. 发明授权

US08263478B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08263478B2
公开(公告)日：2012-09-11
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

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