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    • 8. 发明授权
    • System for evaluating and/or improving performance of a CMP pad dresser
    • 用于评估和/或改善CMP抛光垫修整器性能的系统
    • US09475169B2
    • 2016-10-25
    • US14223726
    • 2014-03-24
    • Chien-Min Sung
    • Chien-Min Sung
    • B24B49/00B24D18/00B24B53/02B24B1/00B24B49/18B24B53/017B24D3/28
    • B24B49/186B24B53/017B24D3/28
    • Methods and systems for evaluating and/or increasing CMP pad dresser performance are provided. In one aspect, for example, a method of identifying overly-aggressive superabrasive particles in a CMP pad dresser can include positioning a CMP pad dresser having a plurality of superabrasive particles on an indicator substrate such that at least a portion of the plurality of superabrasive particles of the CMP pad dresser contact the indicator substrate, and moving the CMP pad dresser across the indicator substrate in a first direction such that the portion of the plurality of superabrasive particles create a first marking pattern on the substrate, wherein the first marking pattern identifies a plurality of working superabrasive particles from among the plurality of superabrasive particles.
    • 提供了用于评估和/或增加CMP垫修整器性能的方法和系统。 在一个方面,例如,在CMP抛光修整器中识别过度侵蚀性超研磨颗粒的方法可以包括将具有多个超研磨颗粒的CMP抛光垫修整器定位在指示剂基底上,使得多个超研磨颗粒的至少一部分 所述CMP抛光修整器与所述指示器基板接触,并且沿着第一方向移动所述CMP抛光垫修整器穿过所述指示器基板,使得所述多个超级磨料颗粒的所述部分在所述基板上形成第一标记图案,其中所述第一标记图案标识 多个超研磨颗粒中的多个工作超研磨颗粒。
    • 10. 发明授权
    • CMP pad dresser having leveled tips and associated methods
    • 具有调平技巧和相关方法的CMP抛光垫修整器
    • US09138862B2
    • 2015-09-22
    • US13802112
    • 2013-03-13
    • Chien-Min Sung
    • Chien-Min Sung
    • B24B53/017
    • B24B53/017B24B37/044H01L21/31055H01L21/3212
    • CMP pad dressers having leveled tips and associated methods are provided. In one aspect, for example, a method can include pressing a CMP pad dresser against a CMP pad, where the dresser includes a monolayer of a plurality of superabrasive particles protruding from a matrix layer. The difference in protrusion distance between the highest protruding tip and the second highest protruding tip of the monolayer of superabrasive particles is less than or equal to about 10 microns and the difference in protrusion distance between the highest 10 protruding tips of the monolayer of superabrasive particles are within about 20 microns or less. The method can further include rotating the dresser against the CMP pad such that asperities are cut into the CMP pad having a maximum cutting depth of about 60 microns.
    • 提供具有调平尖端和相关方法的CMP抛光垫修整器。 在一个方面,例如,一种方法可以包括将CMP垫修整器压靠在CMP垫上,其中修整器包括从矩阵层突出的多个超级磨料颗粒的单层。 超级磨料颗粒单层的最高突出尖端和第二高突出尖端之间的突出距离的差异小于或等于约10微米,并且超级磨料颗粒单层的最高10个突出尖端之间的突出距离的差异为 在约20微米以内。 该方法还可以包括将修整器旋转抵靠在CMP垫上,使得粗糙度被切割成具有大约60微米的最大切割深度的CMP垫。