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1. 发明授权

US06571383B1 Semiconductor device fabrication using a photomask designed using modeling and empirical testing 有权
标题翻译：使用建模和经验测试设计的光掩模的半导体器件制造
公开(公告)号：US06571383B1
公开(公告)日：2003-05-27
申请号：US09562700
申请日：2000-04-28
申请人： Shahid Butt , Henning Haffner , Beate Frankowsky
发明人： Shahid Butt , Henning Haffner , Beate Frankowsky
IPC分类号： G06F1750
CPC分类号： G03F1/68 , G03F1/36 , G03F1/44 , Y10S977/839 , Y10S977/887
摘要： A method of fabricating a semiconductor device is outlined in FIG. 3. An ideal (or desired) pattern of a layer of the semiconductor device is designed (305). A first pass corrected pattern is then derived by correcting the ideal patterns for major effects, e.g., aerial image effects (315, 320). A second pass corrected pattern is then derived by correcting the first pass corrected patterns for remaining errors (304). The second pass corrected pattern can be used to build a photomask (345). The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip (350).
摘要翻译：制造半导体器件的方法在图1中概述。设计半导体器件层的理想（或期望）图案（305）。然后通过校正主要效果（例如，空中影像效果）的理想图案（315,320）来导出第一通过校正图案。然后通过校正剩余错误的第一遍校正图案来导出第二遍校正图案（304）。第二遍校正图案可用于构建光掩模（345）。然后可以使用光掩模来制造半导体器件，诸如存储芯片或逻辑芯片（350）。

2. 发明授权

US06421820B1 Semiconductor device fabrication using a photomask with assist features 失效
标题翻译：使用具有辅助功能的光掩模的半导体器件制造
公开(公告)号：US06421820B1
公开(公告)日：2002-07-16
申请号：US09460034
申请日：1999-12-13
申请人： Scott M. Mansfield , Lars W. Liebmann , Shahid Butt , Henning Haffner
发明人： Scott M. Mansfield , Lars W. Liebmann , Shahid Butt , Henning Haffner
IPC分类号： G06F1750
CPC分类号： G03F1/36 , G03F7/70441
摘要： A semiconductor device can be fabricated using a photomask that has been modified using an assist feature design method (see e.g., FIG. 4A) based on normalized feature spacing. Before the device can be fabricated, a layout of original shapes is designed (402). For at least some of the original shapes, the width of the shape and a distance to at least one neighboring shape are measured (404). A modified shape can then be generated by moving edges of the original shape based on the width and distance measurements (406). This modification can be performed on some or all of the original shapes (408). For each of the modified shapes, a normalized space and correct number of assist features can be computed (410). The layout is then modified by adding the correct number of assist features in a space between the modified shape and the neighboring shape (412). This modified layout can then be used in producing a photomask, which can in turn be used to produce a semiconductor device.
摘要翻译：可以使用已经基于归一化特征间隔使用辅助特征设计方法（参见例如图4A）修改的光掩模来制造半导体器件。在可以制造设备之前，设计原始形状的布局（402）。对于至少一些原始形状，测量形状的宽度和至少一个相邻形状的距离（404）。然后可以通过基于宽度和距离测量来移动原始形状的边缘来生成修改的形状（406）。可以对部分或全部原始形状执行该修改（408）。对于每个修改的形状，可以计算归一化空间和正确数量的辅助特征（410）。然后通过在修改的形状和相邻形状之间的空间中添加正确数量的辅助特征来修改布局（412）。然后，该修改后的布局可用于制造光掩模，光掩模又可用于制造半导体器件。

3. 发明授权

US07056628B2 Mask for projecting a structure pattern onto a semiconductor substrate 失效
标题翻译：用于将结构图案投影到半导体衬底上的掩模
公开(公告)号：US07056628B2
公开(公告)日：2006-06-06
申请号：US10653537
申请日：2003-09-02
申请人： Shahid Butt , Henning Haffner
发明人： Shahid Butt , Henning Haffner
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A mask is configured for projecting a structure pattern onto a semiconductor substrate in an exposure unit. The exposure unit has a minimum resolution limit for projecting the structure pattern onto the semiconductor substrate. The mask has a substrate, at least one raised first structure element on the substrate which has a lateral extent which is at least the minimum lateral extent that can be attained by the exposure unit, a configuration second raised structure elements which are arranged in an area surrounding the at least one first structure element on the substrate in the form of a matrix with a row spacing and a column spacing, whose shape and size are essentially identical to one another, and which have a respective lateral extent that is less than the minimum resolution limit of the exposure unit.
摘要翻译：掩模被配置为在曝光单元中将结构图案投影到半导体衬底上。曝光单元具有用于将结构图案投影到半导体衬底上的最小分辨率限制。所述掩模具有衬底，所述衬底上至少有一个凸起的第一结构元件，其具有至少可由曝光单元获得的最小横向范围的横向范围;布置在区域中的构造的第二凸起结构元件围绕基板上的至少一个第一结构元件以矩阵的形式具有行间距和列间距，其形状和尺寸彼此基本相同，并且具有小于最小值的相应横向范围曝光单位的分辨率限制。

4. 发明申请

US20070041003A1 Focus blur measurement and control method 失效
标题翻译：聚焦模糊测量和控制方法
公开(公告)号：US20070041003A1
公开(公告)日：2007-02-22
申请号：US11206326
申请日：2005-08-18
申请人： Christopher Ausschnitt , Timothy Brunner , Shahid Butt , Daniel Corliss
发明人： Christopher Ausschnitt , Timothy Brunner , Shahid Butt , Daniel Corliss
IPC分类号： G03B27/52
CPC分类号： G03F7/70641 , G03F7/70533 , G03F7/70625
摘要： A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies.
摘要翻译：一种用于优化光刻图案成像和处理系统中的成像和工艺参数设置的方法。该方法包括将印刷在光刻抗蚀剂层中的至少一个控制图案的第一组的尺寸相关联，在对应于不同剂量，散焦和模糊灵敏度的图案之上或之内的三个或更多个位置处测量。该方法然后包括测量印刷在光刻抗蚀剂层中的随后的一组控制图案上的尺寸，位于每个图案上或每个图案上的三个或更多个位置，其中最少三个位置与在第一组中测量的位置匹配，并且确定通过将匹配位置处的尺寸与相关依赖关系进行比较来形成随后的控制模式组相关联的有效剂量，散焦和模糊值。

5. 发明申请

US20050009312A1 GATE LENGTH PROXIMITY CORRECTED DEVICE 审中-公开
标题翻译：门锁长度接近正确的设备
公开(公告)号：US20050009312A1
公开(公告)日：2005-01-13
申请号：US10604112
申请日：2003-06-26
申请人： Shahid Butt , Wayne Ellis , John Gabric
发明人： Shahid Butt , Wayne Ellis , John Gabric
IPC分类号： H01L29/423 , G06F17/50 , H01L21/3205 , H01L21/82 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L23/52 , H01L27/02 , H01L27/04 , H01L27/088 , H01L27/092 , H01L27/12 , H01L29/49 , H01L29/76
CPC分类号： H01L21/823437 , G06F17/5068 , H01L27/0207 , H01L27/1203 , H01L2924/0002 , H01L2924/00
摘要： An electronic device including: a semiconductor substrate having an array of gate conductors, each having a length and a width, comprised of dummy gate conductors and functional gate conductors extending in a widthwise direction, the gate conductors positioned substantially parallel to each other in the widthwise direction and periodically spaced apart a fixed distance in a direction substantially perpendicular to the widthwise direction.
摘要翻译：一种电子设备，包括：半导体衬底，其具有各自具有长度和宽度的栅极导体阵列，所述栅极导体阵列包括虚拟栅极导体和沿宽度方向延伸的功能栅极导体，所述栅极导体在宽度方向上基本上彼此平行并且在基本上垂直于宽度方向的方向上周期性地间隔开固定距离。

6. 发明授权

US07074529B2 Phase-shift mask 失效
标题翻译：相移掩模
公开(公告)号：US07074529B2
公开(公告)日：2006-07-11
申请号：US10787118
申请日：2004-02-27
申请人： Shahid Butt , Gerhard Kunkel
发明人： Shahid Butt , Gerhard Kunkel
IPC分类号： G01F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F7/70325
摘要： The relative surface area sizes of portions having distinct phase-shift and transmission of light of a pattern on a phase-shift mask substantially obey the condition that the product of surface area and transmission of the electrical field strength is the same for all of the portions. Then, frequency doubling occurs due to vanishing zero order diffraction orders and in the case of high-transition attenuated phase-shift masks a large first order diffraction amplitude reveals an even an improved as compared with conventional phase-shift masks. Two-dimensional matrix-like structures particularly on attenuated or halftone phase-shift masks can be arranged to image high-density patterns on a semiconductor wafer. The duty cycles of pattern matrices can be chosen being different from one in two orthogonal directions nevertheless leading to frequency doubling.
摘要翻译：在相移掩模上具有明显的相移和图案的光的透射的部分的相对表面积大小基本上遵循对于所有部分的表面积和电场强度透射率的乘积相同的条件。然后，由于零阶衍射级消失而发生倍频，并且在高转变衰减相移掩模的情况下，与常规相移掩模相比，大的一级衍射幅度显示出均匀的改善。特别是在衰减或半色调相移掩模上的二维矩阵状结构可以被布置成对半导体晶片上的高密度图案进行成像。可以选择模式矩阵的占空比不同于两个正交方向上的一个，但是导致倍频。

7. 发明授权

US06940583B2 Method and apparatus for amplitude filtering in the frequency plane of a lithographic projection system 失效
标题翻译：在光刻投影系统的频率平面中进行幅度滤波的方法和装置
公开(公告)号：US06940583B2
公开(公告)日：2005-09-06
申请号：US10604519
申请日：2003-07-28
申请人： Shahid Butt , Martin Burkhardt
发明人： Shahid Butt , Martin Burkhardt
IPC分类号： G02B27/44 , G03B27/32 , G03B27/42 , G03B27/72 , G03C5/04
CPC分类号： G03B27/72 , G03F7/70316
摘要： A method of projecting a pattern from a mask onto a substrate comprises providing an energy source, a substrate, and a mask containing a pattern of features to be projected onto the substrate, and projecting an energy beam from the energy source though the mask toward the substrate to create a projected mask pattern image. The projected mask pattern image is created by zeroth and higher orders of the energy beam. The method then includes diffracting zeroth order beams of the projected mask pattern image to an extent that prevents the zeroth order beams from reaching the substrate, while permitting higher order beams of the projected mask pattern image to reach the substrate. Preferably, the zeroth order beams of the projected mask pattern image are diffracted at an obtuse angle.
摘要翻译：将图案从掩模投影到衬底上的方法包括提供能量源，衬底和包含要投影到衬底上的特征图案的掩模，以及通过掩模将能量束投射到能量源向着基板以创建投影的掩模图案图像。投射的掩模图案图像由能量束的零级和更高级创建。然后，该方法包括将投影的掩模图案图像的第零级光束衍射到防止第零级光束到达基板的程度，同时允许投影的掩模图案图像的较高阶光束到达基板。优选地，投影的掩模图案图像的零阶光束以钝角衍射。

8. 发明授权

US06842222B2 Method of reducing pitch on semiconductor wafer 失效
标题翻译：降低半导体晶片间距的方法
公开(公告)号：US06842222B2
公开(公告)日：2005-01-11
申请号：US10406888
申请日：2003-04-04
申请人： Gerhard Kunkel , Shahid Butt , Alan Thomas , Juergen Preuninger
发明人： Gerhard Kunkel , Shahid Butt , Alan Thomas , Juergen Preuninger
IPC分类号： G03B27/32 , G03B27/42 , G03B27/52 , G03F7/20 , G03F7/207
CPC分类号： G03F7/70141 , G03F7/70333
摘要： A projected image is formed during a material substrate. A photolithographic mask is illuminated with substantially coherent light at an oblique angle of incidence with respect to a surface of the photolithographic mask. The photolithographic mask includes a substantially transparent mask substrate and one or more lines and spaces patterns formed on the mask substrate and having a periodicity P. The mask substrate includes at least one phase shifting region. At least part of the light that is transmitted through the photolithographic mask is collected using one or more projection lenses which project the portion of the transmitted light onto the material substrate. The material substrate is disposed substantially parallel with, but at a distance from, a focal plane of the projection lens system. The phase shifting region of the mask substrate and the distance from the focal plane are selected such that a substantially focused image is projected onto the material substrate that includes the lines and spaces patterned but with a periodicity P/2.
摘要翻译：在材料基板期间形成投影图像。以相对于光刻掩模的表面的倾斜入射角的基本上相干的光照射光刻掩模。光刻掩模包括基本上透明的掩模基板和形成在掩模基板上并且具有周期P的一个或多个线和间隔图案。掩模基板包括至少一个相移区域。通过光刻掩模透射的光的至少一部分使用一个或多个将透射光的一部分投射到材料基底上的投影透镜来收集。材料基板设置成与投影透镜系统的焦平面大致平行，但距离投影透镜系统的焦平面。选择掩模基板的相移区域和与焦平面的距离，使得将基本上聚焦的图像投影到包括图案化但具有周期性P / 2的线和间隔的材料基板上。

9. 发明授权

US06670646B2 Mask and method for patterning a semiconductor wafer 有权
公开(公告)号：US06670646B2
公开(公告)日：2003-12-30
申请号：US10074479
申请日：2002-02-11
申请人： Zhijian Lu , Shahid Butt , Alois Gutmann
发明人： Zhijian Lu , Shahid Butt , Alois Gutmann
IPC分类号： H01L3300
CPC分类号： G03F1/30 , G03F1/36 , G03F7/70441
摘要： A mask (118) and method for patterning a semiconductor wafer. The mask (118) includes apertures (122) and assist lines (124) disposed between apertures (122). The assist lines (124) reduce the diffraction effects of the lithographic process, resulting in improved depth of focus and resolution of patterns on a semiconductor wafer.

10. 发明授权

US06606151B2 Grating patterns and method for determination of azimuthal and radial aberration 有权
标题翻译：用于确定方位角和径向像差的光栅图案和方法
公开(公告)号：US06606151B2
公开(公告)日：2003-08-12
申请号：US09916917
申请日：2001-07-27
申请人： Gerhard Kunkel , Shahid Butt , Joseph Kirk
发明人： Gerhard Kunkel , Shahid Butt , Joseph Kirk
IPC分类号： G01B900
CPC分类号： G01M11/0242
摘要： Methods and reticles for evaluating lenses are disclosed. In one instance, a reticle which permits light to pass therethrough is provided which includes a first surface with a grating profile formed thereon. The grating profile includes a plurality of grouped stepped portions. Each group of the stepped portions includes a first step which prevents light from propagating therethrough, a second step which propagates light therethrough and a third step which propagates light therethrough at an angle 60 degrees out of phase with the light propagated through the second step.
摘要翻译：公开了用于评估透镜的方法和掩模版。在一种情况下，提供允许光通过的掩模版，其包括形成有光栅轮廓的第一表面。光栅轮廓包括多个分组的阶梯部分。每组台阶部分包括防止光从其中传播的第一步骤，传播光的第二步骤，以及第三步骤，其以与第二步骤传播的光成60度角异相传播光。

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