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    • 7. 发明授权
    • Methods of manufacturing semiconductor devices
    • 制造半导体器件的方法
    • US08148235B2
    • 2012-04-03
    • US12618567
    • 2009-11-13
    • Markus NaujokHermann WendtAlois GutmannMuhammed Shafi Pallachalil
    • Markus NaujokHermann WendtAlois GutmannMuhammed Shafi Pallachalil
    • H01L21/76
    • H01L23/5222H01L21/7682H01L2924/0002H01L2924/00
    • Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insulating material. Conductive lines are formed in the first and second insulating layers. The second insulating material is treated to remove the sacrificial portion, and at least a portion of the first insulating material is removed, forming air gaps between the conductive lines. The second insulating material is impermeable as deposited and permeable after treating it to remove the sacrificial portion. A first region of the workpiece may be masked during the treatment, so that the second insulating material becomes permeable in a second region of the workpiece yet remains impermeable in the first region, thus allowing the formation of the air gaps in the second region, but not the first region.
    • 公开了在集成电路的互连和其结构之间形成气隙的方法。 第一绝缘材料沉积在工件上,并且具有牺牲部分的第二绝缘材料沉积在第一绝缘材料上。 导电线形成在第一和第二绝缘层中。 处理第二绝缘材料以去除牺牲部分,并且去除第一绝缘材料的至少一部分,在导线之间形成气隙。 第二绝缘材料在处理它以去除牺牲部分之后是不可渗透的并且是可渗透的。 工件的第一区域可以在处理期间被掩蔽,使得第二绝缘材料在工件的第二区域变得可渗透,但在第一区域中仍然不可渗透,从而允许在第二区域中形成气隙,但是 不是第一个地区。