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1. 发明授权

US06571383B1 Semiconductor device fabrication using a photomask designed using modeling and empirical testing 有权
标题翻译：使用建模和经验测试设计的光掩模的半导体器件制造
公开(公告)号：US06571383B1
公开(公告)日：2003-05-27
申请号：US09562700
申请日：2000-04-28
申请人： Shahid Butt , Henning Haffner , Beate Frankowsky
发明人： Shahid Butt , Henning Haffner , Beate Frankowsky
IPC分类号： G06F1750
CPC分类号： G03F1/68 , G03F1/36 , G03F1/44 , Y10S977/839 , Y10S977/887
摘要： A method of fabricating a semiconductor device is outlined in FIG. 3. An ideal (or desired) pattern of a layer of the semiconductor device is designed (305). A first pass corrected pattern is then derived by correcting the ideal patterns for major effects, e.g., aerial image effects (315, 320). A second pass corrected pattern is then derived by correcting the first pass corrected patterns for remaining errors (304). The second pass corrected pattern can be used to build a photomask (345). The photomask can then be used to produce a semiconductor device, such a memory chip or logic chip (350).
摘要翻译：制造半导体器件的方法在图1中概述。设计半导体器件层的理想（或期望）图案（305）。然后通过校正主要效果（例如，空中影像效果）的理想图案（315,320）来导出第一通过校正图案。然后通过校正剩余错误的第一遍校正图案来导出第二遍校正图案（304）。第二遍校正图案可用于构建光掩模（345）。然后可以使用光掩模来制造半导体器件，诸如存储芯片或逻辑芯片（350）。

2. 发明申请

US20050144583A1 Method and data-processing system for rule-based optical proximity correction with simulataneous scatter bar insertion 审中-公开
标题翻译：用于基于规则的光学邻近校正的方法和数据处理系统，具有模拟散射条插入
公开(公告)号：US20050144583A1
公开(公告)日：2005-06-30
申请号：US11032483
申请日：2005-01-10
申请人： Beate Frankowsky
发明人： Beate Frankowsky
IPC分类号： G03F1/00 , G03F1/36 , G06F17/50
CPC分类号： G03F1/36 , Y10S430/143
摘要： Lithographic fabrication of a microelectronic component is performed with the aid of OPC and a scatter bar structure. At least one scatter bar is applied on a mask in addition to a main structure for the purpose of a subsequent imaging of the main structure from the mask onto a substrate by exposure. At least one correction value for the OPC is selected in a particular manner in dependence upon a spacing between two parts of the main structure or a spacing between neighboring main structures and the presence of a scatter bar between the two parts of the main structure. The manner in which the correction value is defined is determined by so forming an auxiliary quantity for each scatter bar, that the largest auxiliary quantity that is set is less than the smallest spacing between the parts of the main structure, so that in a program for OPC the presence of a scatter bar between the two parts of the main structure is suggested. In this way, correction values for a rule-based OPC method are flexibly defined even in the presence of scatter bars.
摘要翻译：借助于OPC和散射棒结构来执行微电子部件的平版印刷制造。除了主结构之外，至少一个散射条被施加在掩模上，用于通过曝光将主结构从掩模随后成像到基板上。根据主结构的两个部分之间的间隔或相邻的主要结构之间的间隔以及主结构的两个部分之间的散射条的存在，以特定方式选择OPC的至少一个校正值。确定校正值的方式通过如下形成用于每个散射条的辅助量来确定：设定的最大辅助量小于主结构部件之间的最小间隔，使得在用于 OPC建议在主结构的两部分之间存在散射条。以这种方式，即使在存在分散条的情况下，也可以灵活地定义基于规则的OPC方法的校正值。

3. 发明授权

US06902854B2 Method for carrying out a rule-based optical proximity correction with simultaneous scatter bar insertion 失效
标题翻译：用于同时进行散射棒插入的基于规则的光学邻近校正的方法
公开(公告)号：US06902854B2
公开(公告)日：2005-06-07
申请号：US10163054
申请日：2002-06-05
申请人： Beate Frankowsky
发明人： Beate Frankowsky
IPC分类号： G03F1/00 , G03F1/36 , G03F9/00 , G03C5/00
CPC分类号： G03F1/36 , Y10S430/143
摘要： Lithographic fabrication of a microelectronic component is performed with the aid of OPC and a scatter bar structure. At least one scatter bar in applied on a mask in addition to a main structure for the purpose of a subsequent imaging of the main structure from the mask onto a substrate by exposure. At leant one correction value for the OPC is selected in a particular manner in dependence upon a spacing between two parts of the main structure or spacing between neighboring main structures and the presence of a scatter bar between the two parts of the main structure. The manner in which the correction value is defined is determined by so forming an auxiliary quantity for each scatter bar, that the largest auxiliary quantity that is set is less than the smallest spacing between the parts of the main structure, so that in a program for OPC the presence of a scatter bar between the two parts of the main structure is suggested. In this way, correction values for a rule-based OPC method are flexibly defined even in the presence of scatter bars.
摘要翻译：借助于OPC和散射棒结构来执行微电子部件的平版印刷制造。至少一个散射条除了主要结构之外还施加在掩模上，以便随后通过曝光从掩模将掩模印刷到基板上。根据主结构的两个部分之间的间隔或相邻的主要结构之间的间隔以及主结构的两个部分之间的散射条的存在，以特定方式选择OPC的一个校正值。确定校正值的方式通过如下形成用于每个散射条的辅助量来确定：设定的最大辅助量小于主结构部件之间的最小间隔，使得在用于 OPC建议在主结构的两部分之间存在散射条。以这种方式，即使在存在分散条的情况下，也可以灵活地定义基于规则的OPC方法的校正值。

4. 发明授权

US07007260B2 Method for fabricating an integrated semiconductor circuit 失效
公开(公告)号：US07007260B2
公开(公告)日：2006-02-28
申请号：US10273524
申请日：2002-10-18
申请人： Helge Altfeld , Monika Gschöderer , Michael Eisenhut , Marc Walter , Beate Frankowsky
发明人： Helge Altfeld , Monika Gschöderer , Michael Eisenhut , Marc Walter , Beate Frankowsky
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating an integrated semiconductor circuit having at least two different wiring forms realized in a same metallization plane includes drawing each of the different wiring forms on respectively different layer types. In this manner, the at least two different wiring forms can be individually and jointly analyzed.

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