专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06842222B2 Method of reducing pitch on semiconductor wafer 失效
标题翻译：降低半导体晶片间距的方法
公开(公告)号：US06842222B2
公开(公告)日：2005-01-11
申请号：US10406888
申请日：2003-04-04
申请人： Gerhard Kunkel , Shahid Butt , Alan Thomas , Juergen Preuninger
发明人： Gerhard Kunkel , Shahid Butt , Alan Thomas , Juergen Preuninger
IPC分类号： G03B27/32 , G03B27/42 , G03B27/52 , G03F7/20 , G03F7/207
CPC分类号： G03F7/70141 , G03F7/70333
摘要： A projected image is formed during a material substrate. A photolithographic mask is illuminated with substantially coherent light at an oblique angle of incidence with respect to a surface of the photolithographic mask. The photolithographic mask includes a substantially transparent mask substrate and one or more lines and spaces patterns formed on the mask substrate and having a periodicity P. The mask substrate includes at least one phase shifting region. At least part of the light that is transmitted through the photolithographic mask is collected using one or more projection lenses which project the portion of the transmitted light onto the material substrate. The material substrate is disposed substantially parallel with, but at a distance from, a focal plane of the projection lens system. The phase shifting region of the mask substrate and the distance from the focal plane are selected such that a substantially focused image is projected onto the material substrate that includes the lines and spaces patterned but with a periodicity P/2.
摘要翻译：在材料基板期间形成投影图像。以相对于光刻掩模的表面的倾斜入射角的基本上相干的光照射光刻掩模。光刻掩模包括基本上透明的掩模基板和形成在掩模基板上并且具有周期P的一个或多个线和间隔图案。掩模基板包括至少一个相移区域。通过光刻掩模透射的光的至少一部分使用一个或多个将透射光的一部分投射到材料基底上的投影透镜来收集。材料基板设置成与投影透镜系统的焦平面大致平行，但距离投影透镜系统的焦平面。选择掩模基板的相移区域和与焦平面的距离，使得将基本上聚焦的图像投影到包括图案化但具有周期性P / 2的线和间隔的材料基板上。

2. 发明授权

US07135255B2 Layout impact reduction with angled phase shapes 失效
标题翻译：具有角度相位形状的布局冲击减少
公开(公告)号：US07135255B2
公开(公告)日：2006-11-14
申请号：US10249317
申请日：2003-03-31
申请人： Scott J. Bukofsky , John K. DeBrosse , Marco Hug , Lars W. Liebmann , Daniel J. Nickel , Juergen Preuninger
发明人： Scott J. Bukofsky , John K. DeBrosse , Marco Hug , Lars W. Liebmann , Daniel J. Nickel , Juergen Preuninger
IPC分类号： G01F9/00
CPC分类号： G03F1/30
摘要： A phase shift mask shape that reduces line-end shortening at the critical feature without changing layout size increases required of requisite phase shift rules. The phase feature is given an angled extension, which includes the lithographic shortening value. This allows the critical shape to be designed much closer to the reference layer then it could without the angled extension feature. Phase mask extension features beyond a given device segment are significantly reduced by lengthening the feature along an uncritical portion; moving the feature reference point to the device layer; and flattening the phase extension feature into an L-shape or T-shape along the uncritical parts of a device segment. Applying these design rules allows a draw of the gate conductor under current conditions and puts phase shapes inside without extending the gate conductor dimensions to the next feature.
摘要翻译：减少关键特征而不改变布局尺寸的线端缩短的相移掩模形状增加了所需的相移规则。相位特征给出一个有角度的延伸，其包括光刻缩短值。这允许将临界形状设计得更接近参考层，然后它可以没有成角度的延伸特征。通过沿着非临界部分延长特征，显着减少了给定装置段之外的相位掩模延伸特征; 将特征参考点移动到设备层; 并且将相延伸特征沿着装置段的非关键部分平坦化为L形或T形。应用这些设计规则允许在当前条件下绘制栅极导体，并将相位形状置于内部，而不会将栅极导体尺寸延伸到下一个特征。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式