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1. 发明授权

US4982257A Vertical bipolar transistor with collector and base extensions 失效
标题翻译：具有集电极和基极延伸的垂直双极晶体管
公开(公告)号：US4982257A
公开(公告)日：1991-01-01
申请号：US452450
申请日：1989-12-19
申请人： Shah Akbar , Patricia L. Kroesen , Seiki Ogura , Nivo Rovedo
发明人： Shah Akbar , Patricia L. Kroesen , Seiki Ogura , Nivo Rovedo
IPC分类号： H01L21/331 , H01L29/08 , H01L29/10 , H01L29/732
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/1004 , H01L29/732
摘要： A compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer; a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with an extending laterally from another side of the base layer. The structure further includes a base contact interconnect disposed on a surface of the base contact extension layer and; a collector contact extension layer formed from doped semiconductor material with the same conductivity type as the collector layer, with the collector contact extension layer being in contact with the collector layer and extending laterally from or below the one side thereof; and a collector contact interconnect disposed on a surface of the collector contact extension layer and separated from said emitter layer by only one or more insulating layers.
摘要翻译：压缩的垂直双极晶体管配置，消除了标准对称基极接触的一侧，同时也消除了对集电极触点的要求。双极晶体管包括：集电极层; 设置在所述集电极层上的基层; 设置在所述基底层上的发射极层; 邻近并与发射极层，基极层和集电极层的至少一部分接触的第一侧壁绝缘层; 第二侧壁绝缘层，邻近并与发射极层的另一侧接触并且与基底层的至少一部分接触; 以及由与所述基底层相同导电类型的重掺杂半导体材料形成的基底接触延伸层，所述基底接触延伸层与从所述基底层的另一侧横向延伸接触。所述结构还包括设置在所述基部接触延伸层的表面上的基极接触互连; 集电极接触延伸层，其由与所述集电体层相同的导电类型的掺杂半导体材料形成，所述集电极接触延伸层与所述集电极层接触并从其一侧或下方延伸; 以及集电极触点互连，其设置在集电极接触延伸层的表面上，并且仅通过一个或多个绝缘层与所述发射极层分离。

2. 发明授权

US4957875A Vertical bipolar transistor 失效
标题翻译：垂直双极晶体管
公开(公告)号：US4957875A
公开(公告)日：1990-09-18
申请号：US226738
申请日：1988-08-01
申请人： Shah Akbar , Patricia L. Kroesen , Seiki Ogura , Nivo Rovedo
发明人： Shah Akbar , Patricia L. Kroesen , Seiki Ogura , Nivo Rovedo
IPC分类号： H01L29/73 , G03C3/00 , H01L21/331 , H01L29/08 , H01L29/10 , H01L29/732 , H01L29/737
CPC分类号： H01L29/66272 , H01L29/0821 , H01L29/1004 , H01L29/732 , Y10S148/009 , Y10S148/011
摘要： A compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer; a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposeed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer. The structure further includes a base contact interconnect disposed on a surface of the base contact extension layer and; a collector contact extension layer formed from doped semiconductor material with the same conductivity type as the collector layer, with the collector contact extension layer being in contact with the collector layer and extending laterally from or below the one side thereof; and a collector contact interconnect disposed on a surface of the collector contact extension layer and separated from said emitter layer by only one or more insulating layers.

3. 发明授权

US4729006A Sidewall spacers for CMOS circuit stress relief/isolation and method for making 失效
标题翻译：用于CMOS电路应力释放/隔离的侧壁间隔件和制造方法
公开(公告)号：US4729006A
公开(公告)日：1988-03-01
申请号：US840180
申请日：1986-03-17
申请人： Anthony J. Dally , Seiki Ogura , Jacob Riseman , Nivo Rovedo
发明人： Anthony J. Dally , Seiki Ogura , Jacob Riseman , Nivo Rovedo
IPC分类号： H01L21/76 , H01L21/762 , H01L27/02 , H01L29/06 , H01L29/34 , H01L29/78
CPC分类号： H01L21/76224
摘要： A method for forming fully recessed (planar) isolation regions on a semiconductor for the manufacture of CMOS integrated circuits, and the resulting semiconductor structure, comprising in a P doped silicon substrate with mesas formed therein, forming low viscosity sidewall spacers of borosilicate glass in contact with the sidewalls of those mesas designated to have N-channel devices formed therein; then filling the trenches in the substrate adjacent to the mesas with TEOS; and heating the structure until the boron in the sidewall spacers diffuses into the sidewalls of the designated mesas to form channel stops. These sidewall spacers reduce the occurrence of cracks in the TEOS by relieving internal mechanical stress therein and permit the formation of channel stops via diffusion, thereby permitting mesa walls to be substantially vertical.
摘要翻译：一种用于在用于制造CMOS集成电路的半导体上形成完全凹陷（平面）隔离区域的方法，所得到的半导体结构包括在其中形成有台面的P掺杂硅衬底中，形成接触的硼硅酸盐玻璃的低粘度侧壁间隔物其中所述台面的侧壁被指定为在其中形成有N沟道器件; 然后用TEOS填充与台面相邻的基板中的沟槽; 并加热该结构直到侧壁间隔物中的硼扩散到指定台面的侧壁中以形成通道停止点。这些侧壁间隔件通过减轻TEOS中的内部机械应力来减少TEOS中的裂纹的发生，并允许通过扩散形成通道停止，从而允许台面壁基本上垂直。

4. 发明授权

US4671851A Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique 失效
标题翻译：使用化学机械抛光技术在半导体晶片的表面去除突起的方法
公开(公告)号：US4671851A
公开(公告)日：1987-06-09
申请号：US791861
申请日：1985-10-28
申请人： Klaus D. Beyer , James S. Makris , Eric Mendel , Karen A. Nummy , Seiki Ogura , Jacob Riseman , Nivo Rovedo
发明人： Klaus D. Beyer , James S. Makris , Eric Mendel , Karen A. Nummy , Seiki Ogura , Jacob Riseman , Nivo Rovedo
IPC分类号： H01L21/76 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3105 , H01L21/74 , H01L21/762 , H01L21/763
CPC分类号： H01L21/763 , H01L21/31053 , H01L21/743 , H01L21/76202
摘要： A chemical-mechanical (chem-mech) method for removing SiO.sub.2 protuberances at the surface of a silicon chip, such protuberances including "bird's heads". A thin etch stop layer of Si.sub.3 N.sub.4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO.sub.2 water based slurry. The Si.sub.3 N.sub.4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si.sub.3 N.sub.4 layer located on the top and at the sidewalls of the "bird's heads" and the underlying SiO.sub.2 protuberances are removed to provide a substantially planar integrated structure.
摘要翻译：用于去除硅片表面的SiO 2突起的化学机械（化学机械）方法，包括“鸟头”的突起。将Si 3 N 4的薄的蚀刻停止层沉积在晶片表面上，然后用SiO 2水基浆料进行化学研磨。 Si 3 N 4仅在晶片表面的平面部分上用作抛光或蚀刻阻挡层。位于“鸟头”顶部和侧壁处的Si 3 N 4层的部分和下面的SiO 2突起被去除以提供基本平坦的整体结构。

5. 发明授权

US5892257A Packing density for flash memories 失效
标题翻译：闪存的包装密度
公开(公告)号：US5892257A
公开(公告)日：1999-04-06
申请号：US708432
申请日：1996-09-05
申请人： Joyce Elizabeth Acocella , Carol Galli , Louis Lu-Chen Hsu , Seiki Ogura , Nivo Rovedo , Joseph Francis Shepard
发明人： Joyce Elizabeth Acocella , Carol Galli , Louis Lu-Chen Hsu , Seiki Ogura , Nivo Rovedo , Joseph Francis Shepard
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11526 , H01L27/115 , H01L27/11546 , Y10S148/117 , Y10S438/981
摘要： Improved packing density as well as improved performance and manufacturing yield is achieved in an electrically programmable memory by confining floating gate structures between isolation structures covered with a thin nitride layer. The confinement of the floating gate is achieved by planarization, preferably with a self-limiting chemical/mechanical polishing process, to the surface of the nitride layer covering the isolation structures. Gate oxide and control electrode connections can then be formed on a substantially planar surface without compromising the quality of the gate oxide or breakdown voltage the device must withstand for programming. Since severe topology is avoided over which these connections are formed, improved formation of low resistance connections, possibly including metal connections, are possible and allow scaling of transistors of the memory cells to be scaled to sizes not previously possible.
摘要翻译：通过将浮置栅极结构限制在被薄氮化物层覆盖的隔离结构之间，可在电可编程存储器中实现提高的封装密度以及改进的性能和制造产量。浮栅的限制是通过平面化，优选采用自限制化学/机械抛光工艺，覆盖覆盖隔离结构的氮化物层的表面来实现的。然后可以在基本平坦的表面上形成栅极氧化物和控制电极连接，而不会损害器件必须承受编程的栅极氧化物的质量或击穿电压。由于避免了形成这些连接的严格的拓扑结构，所以可能包括可能包括金属连接的低电阻连接的形成得到改进，并且允许将存储器单元的晶体管缩放到先前不可能的尺寸。

6. 发明授权

US5369049A DRAM cell having raised source, drain and isolation 失效
标题翻译： DRAM电池具有升高的源极，漏极和隔离
公开(公告)号：US5369049A
公开(公告)日：1994-11-29
申请号：US169873
申请日：1993-12-17
申请人： Joyce E. Acocella , Louis L. Hsu , Seiki Ogura , Nivo Rovedo , Joseph F. Shepard
发明人： Joyce E. Acocella , Louis L. Hsu , Seiki Ogura , Nivo Rovedo , Joseph F. Shepard
IPC分类号： H01L27/108 , H01L27/00 , H01L21/70
CPC分类号： H01L27/10829
摘要： A method of forming a MOS DRAM cell having a trench capacitor in which the strap connection to the trench capacitor, the source, drain, and isolation are all raised above the surface of the single crystal silicon includes the steps of forming the trench capacitors, depositing a blanket gate stack including the gate oxide and a set of gate layers, and then depositing isolation members in apertures etched in the gate stack using the gate oxide as an etch stop. The same sidewalls that are used to form an LDD source and drain form a self-aligned aperture for a surface strap that insulates the strap from misaligned portions of the gate stack.
摘要翻译：一种形成具有沟槽电容器的MOS DRAM单元的方法，其中与沟槽电容器的带连接，源极，漏极和隔离都在单晶硅的表面上方升高，包括以下步骤：形成沟槽电容器，包括栅极氧化物和一组栅极层的覆盖栅极堆叠，然后使用栅极氧化物作为蚀刻停止层，在隔离栅堆叠中蚀刻的孔中沉积隔离元件。用于形成LDD源和漏极的相同侧壁形成用于将带与栅堆叠的未对准部分绝缘的表面带的自对准孔。

7. 发明授权

US5541130A Process for making and programming a flash memory array 失效
标题翻译：制作和编程闪存阵列的过程
公开(公告)号：US5541130A
公开(公告)日：1996-07-30
申请号：US477791
申请日：1995-06-07
申请人： Seiki Ogura , Nivo Rovedo , Robert C. Wong
发明人： Seiki Ogura , Nivo Rovedo , Robert C. Wong
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115 , Y10S438/972
摘要： A process for fabricating a high density memory array. N-type impurities are implanted in a p-type substrate to form continuous rails of diffusion that have a substantially flat contour. Each rail of diffusion defines a corresponding bit line. Each rail defines the source and drain region of each pair of adjacent memory array cells associated with the bit line. In one embodiment, multiple layers of polysilicon are utilized to form a control gate, a floating gate, a source and a drain. In another embodiment, multiple layers of polysilicon are utilized to form an auxiliary gate, a floating gate, a source and a drain. In both embodiments, the polysilicon layers self-aligned to substantially reduce polysilicon layer-overlap so as to minimize parasitic capacitances. Domino and Skippy Domino schemes are used to program and read the memory array cells. Programming may be implemented with channel hot-electron tunneling using relatively low programming voltages thereby realizing faster programming time and closer bit-line spacing.
摘要翻译：一种用于制造高密度存储器阵列的方法。将N型杂质注入p型衬底中以形成具有基本平坦轮廓的连续扩散轨道。每个扩散轨定义相应的位线。每个轨道限定与位线相关联的每对相邻存储器阵列单元的源极和漏极区域。在一个实施例中，利用多层多晶硅来形成控制栅极，浮置栅极，源极和漏极。在另一实施例中，利用多层多晶硅来形成辅助栅极，浮栅，源极和漏极。在两个实施例中，多晶硅层自对准以显着减少多晶硅层重叠，从而使寄生电容最小化。 Domino和Skippy Domino方案用于对内存阵列单元进行编程和读取。通过使用相对较低的编程电压的通道热电子隧穿可以实现编程，从而实现更快的编程时间和更靠近的位线间隔。

8. 依法登记的发明

USH986H Field effect-transistor with asymmetrical structure 失效
公开(公告)号：USH986H
公开(公告)日：1991-11-05
申请号：US363747
申请日：1989-06-09
申请人： Christopher F. Codella , Nivo Rovedo , Seiki Ogura
发明人： Christopher F. Codella , Nivo Rovedo , Seiki Ogura
IPC分类号： H01L21/28 , H01L21/336 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66659 , H01L21/28132 , H01L29/1033 , H01L29/1045 , H01L29/1083 , H01L29/7835
摘要： A field effect transistor of asymmetrical structure comprises: a semiconductor substrate of first conductivity type; source and drain regions of second conductivity type disposed in a surface of the substrate and spaced apart by a channel region; and a single, lightly doped extension of the drain region into the channel, the extension being of the second conductivity type and of a lower dopant concentration than the drain region. The transistor can further beneficially comprise a halo region of the first conductivity type in the substrate generally surrounding only the source region.

9. 发明授权

US4868135A Method for manufacturing a Bi-CMOS device 失效
标题翻译： Bi-CMOS器件的制造方法
公开(公告)号：US4868135A
公开(公告)日：1989-09-19
申请号：US287945
申请日：1988-12-21
申请人： Seiki Ogura , Nivo Rovedo
发明人： Seiki Ogura , Nivo Rovedo
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L27/07
CPC分类号： H01L21/8249 , H01L27/0623 , H01L27/0711
摘要： A method for fabricating a Bi-CMOS device is disclosed herein, which device can include both vertical PNP and NPN components. The process steps include forming the reach-through N+ subcollector to the bipolar device without extra processing steps; combining into one mask the threshold adjust/well implants with self-aligned isolation leakage protection implants by using a self-aligned, removable oxide mask prior to field isolation; using a resist etch-back scheme to protect against emitter-to-base punch-through while self-aligning the pedestal and base; and also providing for the removal of the gate oxide at the emitter while maintaining it at the FET, without extra masks.The device incorporates similar structural featues between the bi-polar and FET devices. The NPN and pFET can share the same well and a P+ diffusion (the p+ extrinsic base is the same as the p+ source). Also, the pnp and nFET can share the same well and an n+ diffusion.

10. 发明授权

US4648937A Method of preventing asymmetric etching of lines in sub-micrometer range sidewall images transfer 失效
标题翻译：防止亚微米范围侧壁图像传输线路的不对称蚀刻的方法
公开(公告)号：US4648937A
公开(公告)日：1987-03-10
申请号：US792931
申请日：1985-10-30
申请人： Seiki Ogura , Jacob Riseman , Nivo Rovedo , Ronald N. Schulz
发明人： Seiki Ogura , Jacob Riseman , Nivo Rovedo , Ronald N. Schulz
IPC分类号： G03F1/00 , G03F1/08 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22
CPC分类号： H01L21/0337 , H01L21/0332 , H01L21/31116 , Y10S438/945 , Y10S438/951
摘要： In the process of sidewall image transfer, a vertical step is etched in some material and then a conformal layer of some other material is deposited over the step. By reactive ion etching the conformal material can be anisotropically etched which results in a sidewall spacer of the second material on the vertical surfaces of the step material. By removing the step material, the free standing spacer can then be used as a mask. One area in which improvement is desired is in the selectivity of the etch of the spacer to the material immediately below it. Because of the limited number of materials and reactive ion etching gases it is difficult to avoid an etch in the underlying layer as the sidewall spacer is formed. A suitable etch stop is employed beneath the step material to avoid the problem. Because of the usual technology, the spacer material is plasma deposited silicon nitride and the step material is photoresist. Polysilicon, aluminum or similar metal is employed as an etch stop, since it is not by a CF.sub.4 based gas which is used to form the spacer.
摘要翻译：在侧壁图像转印的过程中，在一些材料中蚀刻垂直台阶，然后在该台阶上沉积一些其它材料的共形层。通过反应离子蚀刻，共形材料可被各向异性地蚀刻，这导致第二材料的侧壁间隔物在台阶材料的垂直表面上。通过除去台阶材料，可以将自立式间隔物用作掩模。需要改进的一个领域是间隔物的蚀刻对其正下方的材料的选择性。由于材料数量和反应离子蚀刻气体的数量有限，所以当形成侧壁间隔物时难以避免下层蚀刻。在步骤材料之下采用合适的蚀刻停止件以避免该问题。由于通常的技术，间隔材料是等离子体沉积氮化硅，步骤材料是光致抗蚀剂。使用多晶硅，铝或类似金属作为蚀刻阻挡层，因为它不是通过用于形成间隔物的基于CF 4的气体。

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