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1. 发明授权

US07589028B1 Hydroxyl bond removal and film densification method for oxide films using microwave post treatment 有权
标题翻译：使用微波后处理的氧化膜的羟基去除和膜致密化方法
公开(公告)号：US07589028B1
公开(公告)日：2009-09-15
申请号：US11280076
申请日：2005-11-15
申请人： Seon-Mee Cho , Mike Barnes , Michelle Schulberg , George D. Papasouliotis
发明人： Seon-Mee Cho , Mike Barnes , Michelle Schulberg , George D. Papasouliotis
IPC分类号： H01L21/31 , H01L21/461
CPC分类号： H01L21/76837 , H01L21/02145 , H01L21/02214 , H01L21/0228 , H01L21/02345 , H01L21/02359 , H01L21/3105 , H01L21/31604 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： Methods of forming dielectric films with increased density and improved film properties are provided. The methods involve exposing dielectric films to microwave radiation. According to various embodiments, the methods may be used to remove hydroxyl bonds, increase film density, reduce or eliminate seams and voids, and optimize film properties such as dielectric constant, refractive index and stress for particular applications. In certain embodiments, the methods are used to form conformal films deposited by a technique such as PDL. The methods may be used in applications requiring low thermal budgets.
摘要翻译：提供了形成具有增加的密度和改进的膜性质的介电膜的方法。该方法包括将介电膜暴露于微波辐射。根据各种实施方案，可以使用这些方法去除羟基键，增加膜密度，减少或消除接缝和空隙，并且优化膜特性，例如特定用途的介电常数，折射率和应力。在某些实施方案中，所述方法用于形成通过诸如PDL的技术沉积的保形膜。该方法可用于需要低热预算的应用中。

2. 发明授权

US07892985B1 Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing 有权
标题翻译：使用低热预算微波固化的低k碳掺杂氧化硅致孔剂去除和机械强度增强方法
公开(公告)号：US07892985B1
公开(公告)日：2011-02-22
申请号：US11280113
申请日：2005-11-15
申请人： Seon-Mee Cho , George D. Papasouliotis , Mike Barnes
发明人： Seon-Mee Cho , George D. Papasouliotis , Mike Barnes
IPC分类号： H01L21/4757
CPC分类号： H01L21/76825 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02337 , H01L21/02345 , H01L2221/1047
摘要： Improved methods for preparing a low-k dielectric material on a substrate using microwave radiation are provided. The use of microwave radiation allows the preparation of low-k films to be accomplished at low temperatures. According to various embodiments, microwave radiation is used to remove porogen from a precursor film and/or to increase the strength of the resulting porous dielectric layer. In a preferred embodiment, methods involve (a) forming a precursor film that contains a porogen and a structure former on a substrate, (b) exposing the precursor film to microwave radiation to remove the porogen from the precursor film to thereby create voids within the dielectric material and form the porous low-k dielectric layer and (c) exposing the dielectric material to microwave radiation in a manner that increases the mechanical strength of the porous low-k dielectric layer.
摘要翻译：提供了使用微波辐射在衬底上制备低k电介质材料的改进方法。使用微波辐射可以使低k膜的制备在低温下完成。根据各种实施例，使用微波辐射来从前体膜去除造孔剂和/或增加所得到的多孔介电层的强度。在优选的实施方案中，方法包括（a）在基底上形成含有致孔剂和结构形成剂的前体膜，（b）将前体膜暴露于微波辐射以从前体膜去除致孔剂，从而在介电材料并形成多孔低k电介质层，和（c）以提高多孔低k电介质层的机械强度的方式将电介质材料暴露于微波辐射。

3. 发明授权

US07491653B1 Metal-free catalysts for pulsed deposition layer process for conformal silica laminates 有权
标题翻译：用于保形二氧化硅层压板的脉冲沉积层工艺的无金属催化剂
公开(公告)号：US07491653B1
公开(公告)日：2009-02-17
申请号：US11318268
申请日：2005-12-23
申请人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
发明人： George D. Papasouliotis , Seon-Mee Cho , Ron Rulkens , Mihai Buretea , Dennis M. Hausmann , Michael Barnes
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/31612 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/31625 , H01L21/31629 , H01L21/31633 , H01L21/76837
摘要： A metal- and metalloid-free nanolaminate dielectric film can be formed according to a pulsed layer deposition (PDL) process. A metal- and metalloid-free compound is used to catalyze the reaction of silica deposition by surface reaction of alkoxysilanols. Films can be grown at rates faster than 30 nm per exposure cycle. The invention can be used for the deposition of both doped (e.g., PSG) and undoped silicon oxide films. The films deposited are conformal, hence the method can accomplish void free gap-fill in high aspect ratio gaps encountered in advanced technology nodes (e.g., the 45 nm technology node and beyond), and can be used in other applications requiring conformal dielectric deposition.
摘要翻译：可以根据脉冲层沉积（PDL）工艺形成不含金属和非准金属的纳米酸盐电介质膜。使用金属和非准金属化合物催化二氧化硅沉积与烷氧基硅烷醇表面反应的反应。膜可以以每个曝光周期快30nm的速度生长。本发明可用于沉积掺杂（例如PSG）和未掺杂的氧化硅膜。沉积的膜是共形的，因此该方法可以在高级技术节点（例如，45nm技术节点及其以外）中遇到的高纵横比间隙中实现无空隙间隙填充，并可用于需要保形电介质沉积的其它应用中。

4. 发明授权

US07163899B1 Localized energy pulse rapid thermal anneal dielectric film densification method 有权
标题翻译：局部能量脉冲快速热退火电介质膜致密化方法
公开(公告)号：US07163899B1
公开(公告)日：2007-01-16
申请号：US11327668
申请日：2006-01-05
申请人： Seon-Mee Cho , George D. Papasouliotis
发明人： Seon-Mee Cho , George D. Papasouliotis
IPC分类号： H01L21/31 , H01L21/461
CPC分类号： H01L21/31612 , H01L21/02164 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76224
摘要： A densified dielectric film is formed on a substrate by a process that involves annealing a film deposited on the substrate by application of a localized energy pulse, such as a laser pulse, for example one of about 10 to 100 ns in duration from an excimer laser, that raises the temperature of the film above 1000° C. without raising the substrate temperature sufficiently to modify its properties (e.g., the substrate temperature remains below 550° C. or preferably in many applications below 400° C.). The dielectric deposition may be by any suitable process, for example CVD, SOG (spin-on glass), ALD, or catalyzed PDL. The resulting film is densified without detrimentally impacting underlying substrate layers. The invention enables dielectric gap fill and film densification at low temperature to the 45 nm technology node and beyond, while maintaining oxide film properties.
摘要翻译：通过包括通过施加诸如激光脉冲的局部能量脉冲（例如从受激准分子激光器的约10至100ns的持续时间之一）来退火沉积在基板上的膜的方法，在基板上形成致密的电介质膜，其将膜的温度提高到1000℃以上，而不会充分提高衬底温度以改变其性质（例如，衬底温度保持在550℃以下，或优选在低于400℃的许多应用中）。电介质沉积可以通过任何合适的方法，例如CVD，SOG（旋涂玻璃），ALD或催化的PDL。所得膜被致密化而不会有害地冲击下面的基底层。本发明能够在维持氧化膜性能的同时，在45纳米技术节点及其以外的低温下实现电介质间隙填充和薄膜致密化。

5. 发明申请

US20130087783A1 METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION 有权
标题翻译：用含有气体稀释剂的含硅层的方法
公开(公告)号：US20130087783A1
公开(公告)日：2013-04-11
申请号：US13630901
申请日：2012-09-28
申请人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
发明人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
IPC分类号： H01L21/316 , H01L21/31 , H01L29/786
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

6. 发明申请

US20130068161A1 GAS DELIVERY AND DISTRIBUTION FOR UNIFORM PROCESS IN LINEAR-TYPE LARGE-AREA PLASMA REACTOR 审中-公开
标题翻译：直线式大面积等离子体反应器中均匀工艺的气体输送和分配
公开(公告)号：US20130068161A1
公开(公告)日：2013-03-21
申请号：US13538389
申请日：2012-06-29
申请人： John M. White , Suhail Anwar , Jozef Kudela , Carl A. Sorensen , Tae K. Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Benjamin M. Johnston
发明人： John M. White , Suhail Anwar , Jozef Kudela , Carl A. Sorensen , Tae K. Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Benjamin M. Johnston
IPC分类号： C23C16/455 , B05B1/14
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4587 , C23C16/511 , C23C16/513 , C23C16/54
摘要： An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.
摘要翻译：一种用于将气体引入处理室的装置，包括一个或多个具有气体注入孔的气体分配管，所述气体分配管的尺寸更大，数量更多，和/或在气体导入管的部分处更靠近在一起，其中较大的气体导通通过需要喷气孔。具有较大气体注入孔的外管可围绕每个气体分配管。气体分配管可以流体连接到真空前级管线，以便于在处理循环结束时从气体分配管中除去气体。

7. 发明授权

US08043667B1 Method to improve mechanical strength of low-K dielectric film using modulated UV exposure 有权
标题翻译：使用调制紫外线曝光提高低K电介质膜的机械强度的方法
公开(公告)号：US08043667B1
公开(公告)日：2011-10-25
申请号：US12566514
申请日：2009-09-24
申请人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
发明人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
IPC分类号： B05D3/02 , B05D3/06
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
摘要翻译：提供了用于提高基板上的电介质膜的机械特性的方法和装置。在一些实施例中，电介质膜是碳掺杂氧化物（CDO）。这些方法涉及使用调制的紫外线辐射来增加机械强度，同时限制收缩并限制膜的介电常数的任何增加。方法可提高膜的硬度，模量和内聚强度，从而在随后的装置制造程序如化学机械抛光（CMP）和包装中提供更好的整合能力和改进的性能。

8. 发明授权

US07968439B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US07968439B2
公开(公告)日：2011-06-28
申请号：US12069424
申请日：2008-02-06
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

9. 发明申请

US20090197401A1 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US20090197401A1
公开(公告)日：2009-08-06
申请号：US12069424
申请日：2008-02-06
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/26
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

10. 发明申请

US20080075834A1 DOSIMETRY USING OPTICAL EMISSION SPECTROSCOPY/RESIDUAL GAS ANALYZER IN CONJUNTION WITH ION CURRENT 有权
标题翻译：使用光学排放光谱/残留气体分析仪与离子电流配合使用
公开(公告)号：US20080075834A1
公开(公告)日：2008-03-27
申请号：US11681313
申请日：2007-03-02
申请人： Kartik Ramaswamy , Seon-Mee Cho , Tsutomu Tanaka , Majeed A. Foad
发明人： Kartik Ramaswamy , Seon-Mee Cho , Tsutomu Tanaka , Majeed A. Foad
IPC分类号： C23C16/52 , C23C14/00 , B05C11/00 , H05H1/24 , C23C16/00
CPC分类号： C23C14/48 , C23C14/54 , H01J37/321 , H01J37/32412 , H01J37/32935
摘要： The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.
摘要翻译：本发明通常提供了在等离子体处理期间实时控制离子剂量的方法和装置。在一个实施方案中，离子剂量可以使用来自与来自RF探针的原位测量组合的质量分布传感器等离子体进行原位测量来控制。

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