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    • 8. 发明授权
    • Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)
    • 通过快速表面催化气相沉积(RVD)制备的二氧化硅薄膜中的磷酸铝掺入
    • US07129189B1
    • 2006-10-31
    • US10874808
    • 2004-06-22
    • Dennis M. HausmannAdrianne K. TiptonBunsen NieGeorge D. PapasouliotisRon RulkensRaihan M. Tarafdar
    • Dennis M. HausmannAdrianne K. TiptonBunsen NieGeorge D. PapasouliotisRon RulkensRaihan M. Tarafdar
    • H01L21/31H01L21/469
    • C23C16/45553C23C16/40C23C16/45531C23C16/45534H01L21/314H01L21/3142H01L21/31608
    • An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.
    • 使用原子层沉积(ALD)和快速气相沉积(RVD)技术的方法在基片表面的小特征上共同沉积介电材料。 所得到的电介质膜使用原子层沉积(ALD)和快速表面催化气相沉积(RVD)来施加磷酸盐掺杂的硅酸盐膜。 该方法包括以下四个主要操作:将衬底表面暴露于含铝前体气体,以在衬底表面上形成基本上饱和的含铝前体层; 将衬底表面暴露于含磷酸盐的前体气体以在衬底表面上形成磷酸铝; 将衬底表面暴露于含铝前体气体,以在衬底表面上形成第二基本饱和的含铝前体层; 并将衬底表面暴露于含硅前体气体以形成电介质膜。 通常,在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料,直到达到所需的介电厚度。