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1. 发明授权

US08043667B1 Method to improve mechanical strength of low-K dielectric film using modulated UV exposure 有权
标题翻译：使用调制紫外线曝光提高低K电介质膜的机械强度的方法
公开(公告)号：US08043667B1
公开(公告)日：2011-10-25
申请号：US12566514
申请日：2009-09-24
申请人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
发明人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
IPC分类号： B05D3/02 , B05D3/06
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
摘要翻译：提供了用于提高基板上的电介质膜的机械特性的方法和装置。在一些实施例中，电介质膜是碳掺杂氧化物（CDO）。这些方法涉及使用调制的紫外线辐射来增加机械强度，同时限制收缩并限制膜的介电常数的任何增加。方法可提高膜的硬度，模量和内聚强度，从而在随后的装置制造程序如化学机械抛光（CMP）和包装中提供更好的整合能力和改进的性能。

2. 发明授权

US08715788B1 Method to improve mechanical strength of low-K dielectric film using modulated UV exposure 有权
标题翻译：使用调制紫外线曝光提高低K电介质膜的机械强度的方法
公开(公告)号：US08715788B1
公开(公告)日：2014-05-06
申请号：US13275209
申请日：2011-10-17
申请人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
发明人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
IPC分类号： C08F2/46 , B05D3/00 , B05D3/06
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
摘要翻译：提供了用于提高基板上的电介质膜的机械特性的方法和装置。在一些实施例中，电介质膜是碳掺杂氧化物（CDO）。这些方法涉及使用调制的紫外线辐射来增加机械强度，同时限制收缩并限制膜的介电常数的任何增加。方法可提高膜的硬度，模量和内聚强度，从而在随后的装置制造程序如化学机械抛光（CMP）和包装中提供更好的整合能力和改进的性能。

3. 发明授权

US07611757B1 Method to improve mechanical strength of low-K dielectric film using modulated UV exposure 有权
标题翻译：使用调制紫外线曝光提高低K电介质膜的机械强度的方法
公开(公告)号：US07611757B1
公开(公告)日：2009-11-03
申请号：US11824049
申请日：2007-06-28
申请人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
发明人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
IPC分类号： B05D3/06 , B05D3/02 , C23C16/00
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
摘要翻译：提供了用于提高基板上的电介质膜的机械特性的方法和装置。在一些实施例中，电介质膜是碳掺杂氧化物（CDO）。这些方法涉及使用调制的紫外线辐射来增加机械强度，同时限制收缩并限制膜的介电常数的任何增加。方法可提高膜的硬度，模量和内聚强度，从而在随后的装置制造程序如化学机械抛光（CMP）和包装中提供更好的整合能力和改进的性能。

4. 发明授权

US07253125B1 Method to improve mechanical strength of low-k dielectric film using modulated UV exposure 有权
标题翻译：使用调制紫外线曝光提高低k电介质膜的机械强度的方法
公开(公告)号：US07253125B1
公开(公告)日：2007-08-07
申请号：US10825888
申请日：2004-04-16
申请人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
发明人： Ananda K. Bandyopadhyay , Seon-Mee Cho , Haiying Fu , Easwar Srinivasan , David Mordo
IPC分类号： H01L21/00
CPC分类号： H01L21/31633 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/3105 , H01L21/31695
摘要： Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.
摘要翻译：提供了用于提高基板上的电介质膜的机械特性的方法和装置。在一些实施例中，电介质膜是碳掺杂氧化物（CDO）。这些方法涉及使用调制的紫外线辐射来增加机械强度，同时限制收缩并限制膜的介电常数的任何增加。方法可提高膜的硬度，模量和内聚强度，从而在随后的装置制造程序如化学机械抛光（CMP）和包装中提供更好的整合能力和改进的性能。

5. 发明授权

US07265061B1 Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties 有权
标题翻译：用于低介电常数材料的UV曝光的方法和设备用于致孔剂去除和改进的机械性能
公开(公告)号：US07265061B1
公开(公告)日：2007-09-04
申请号：US10800377
申请日：2004-03-11
申请人： Seon-Mee Cho , Easwar Srinivasan , Brian G. Lu , David Mordo
发明人： Seon-Mee Cho , Easwar Srinivasan , Brian G. Lu , David Mordo
IPC分类号： H01L21/31
CPC分类号： C23C16/56 , C23C16/401 , H01L21/3105
摘要： Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric matrix and further exposing the dielectric matrix to ultraviolet radiation to increase the mechanical strength of the dielectric matrix. Some methods involve activating a gas to create reactive gas species that can clean a reaction chamber. One disclosed apparatus includes an array of multiple ultraviolet sources that can be controlled such that different wavelengths of light can be used to irradiate a sample at a time.
摘要翻译：提供了在基板上制备多孔低k电介质材料的方法和装置。所述方法任选地包括使用紫外线辐射与来自含致孔剂的前体膜反应并从其中除去致孔剂，留下多孔电介质基质，并进一步将电介质基质暴露于紫外线辐射以增加电介质基质的机械强度。一些方法包括激活气体以产生可以清洁反应室的反应性气体物质。一种公开的装置包括可以被控制的多个紫外光源的阵列，使得可以一次使用不同波长的光来照射样品。

6. 发明授权

US07781351B1 Methods for producing low-k carbon doped oxide films with low residual stress 有权
标题翻译：生产具有低残余应力的低k碳掺杂氧化物膜的方法
公开(公告)号：US07781351B1
公开(公告)日：2010-08-24
申请号：US10820525
申请日：2004-04-07
申请人： Qingguo Wu , Haiying Fu , Dong Niu , Ananda K. Bandyopadhyay , David Mordo
发明人： Qingguo Wu , Haiying Fu , Dong Niu , Ananda K. Bandyopadhyay , David Mordo
IPC分类号： H01L21/31
CPC分类号： H01L21/31633 , C23C16/30 , C23C16/401 , C23C16/505 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228
摘要： Methods of preparing a carbon doped oxide (CDO) layer of low dielectric constant and low residual stress involving, for instance, providing a substrate to a deposition chamber and exposing it to an organosilicon precursor containing unsaturated C—C bonds or to multiple organic precursors including at least one organosilicon and at least one unsaturated C—C bond are provided. The methods may also involve igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components with a high percentage of the low frequency component, and depositing the carbon doped dielectric layer under conditions in which the resulting dielectric layer has a residual stress of not greater than, e.g., about 50 MPa, and a dielectric constant not greater than about 3.
摘要翻译：制备低介电常数和低残余应力的碳掺杂氧化物（CDO）层的方法，涉及例如提供衬底至沉积室并将其暴露于含有不饱和C-C键的有机硅前体或多种有机前体，包括提供至少一种有机硅和至少一种不饱和C-C键。所述方法还可以包括使用具有高百分比的低频分量的高频和低频分量的射频功率在沉积室中点燃和维持等离子体，以及在所得介电层具有的条件下沉积碳掺杂介电层残余应力不大于例如约50MPa，介电常数不大于约3。

7. 发明授权

US07622400B1 Method for improving mechanical properties of low dielectric constant materials 有权
标题翻译：改善低介电常数材料力学性能的方法
公开(公告)号：US07622400B1
公开(公告)日：2009-11-24
申请号：US10849568
申请日：2004-05-18
申请人： Keith Fox , Easwar Srinivasan , David Mordo , Qingguo Wu
发明人： Keith Fox , Easwar Srinivasan , David Mordo , Qingguo Wu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76801 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/3105 , H01L21/31629 , H01L21/31633 , H01L21/76826
摘要： Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.
摘要翻译：提供了形成具有低介电常数和高机械强度的介电层的方法。所述方法包括将电介质材料的子层沉积在衬底上，随后用等离子体处理子层。重复沉积和等离子体处理子层的过程，直到达到所需的厚度。

8. 发明授权

US07799705B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups 有权
标题翻译：使用有机官能团前体制备低应力多孔低k介电材料的方法
公开(公告)号：US07799705B1
公开(公告)日：2010-09-21
申请号：US12348791
申请日：2009-01-05
申请人： Qingguo Wu , Haiying Fu , David C. Smith , David Mordo
发明人： Qingguo Wu , Haiying Fu , David C. Smith , David Mordo
IPC分类号： H01L21/31 , H01L21/469 , C23C16/40 , C23C16/56
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02348
摘要： Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.
摘要翻译：提供了在基片上制备低应力多孔低k介电材料的方法。所述方法涉及使用具有一个或多个有机官能团的结构前体前体和/或致孔剂前体。在一些情况下，结构前体具有碳 - 碳双键或三键。在其他情况下，结构前体前体和致孔剂前体中的一种或两种具有一个或多个大体积的有机基团。在其他情况下，结构前体具有碳 - 碳双键或三键，结构形成前体和致孔剂前体中的一种或两种具有一个或多个大体积的有机基团。一旦形成前体膜，去除致孔剂，留下具有高机械强度的多孔低k电介质基质。描述了不同类型的结构前体前体和致孔剂前体。所得到的低应力低k多孔膜可用作集成电路制造应用中的低k电介质膜。

9. 发明授权

US07241704B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups 失效
标题翻译：使用有机官能团前体制备低应力多孔低介电材料的方法
公开(公告)号：US07241704B1
公开(公告)日：2007-07-10
申请号：US10927777
申请日：2004-08-27
申请人： Qingguo Wu , Haiying Fu , David C. Smith , David Mordo
发明人： Qingguo Wu , Haiying Fu , David C. Smith , David Mordo
IPC分类号： H01L21/31 , H01L21/469 , C23C16/40 , C23C16/56
CPC分类号： C23C16/402 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02348 , H01L21/31695
摘要： Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.
摘要翻译：提供了在基片上制备低应力多孔低k介电材料的方法。所述方法涉及使用具有一个或多个有机官能团的结构前体前体和/或致孔剂前体。在一些情况下，结构前体具有碳 - 碳双键或三键。在其他情况下，结构前体前体和致孔剂前体中的一种或两种具有一个或多个大体积的有机基团。在其他情况下，结构前体具有碳 - 碳双键或三键，结构形成前体和致孔剂前体中的一种或两种具有一个或多个大体积的有机基团。一旦形成前体膜，去除致孔剂，留下具有高机械强度的多孔低k电介质基质。描述了不同类型的结构前体前体和致孔剂前体。所得到的低应力低k多孔膜可用作集成电路制造应用中的低k电介质膜。

10. 发明授权

US07473653B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups 有权
标题翻译：使用有机官能团前体制备低应力多孔低介电材料的方法
公开(公告)号：US07473653B1
公开(公告)日：2009-01-06
申请号：US11764750
申请日：2007-06-18
申请人： Qingguo Wu , Haiying Fu , David C. Smith , David Mordo
发明人： Qingguo Wu , Haiying Fu , David C. Smith , David Mordo
IPC分类号： H01L21/31 , H01L21/469 , C23C16/40 , C23C16/56
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02348
摘要： Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications.
摘要翻译：提供了在基片上制备低应力多孔低k介电材料的方法。所述方法涉及使用具有一个或多个有机官能团的结构前体前体和/或致孔剂前体。在一些情况下，结构前体具有碳 - 碳双键或三键。在其他情况下，结构前体前体和致孔剂前体中的一种或两种具有一个或多个大体积的有机基团。在其他情况下，结构前体具有碳 - 碳双键或三键，结构形成前体和致孔剂前体中的一种或两种具有一个或多个大体积的有机基团。一旦形成前体膜，去除致孔剂，留下具有高机械强度的多孔低k电介质基质。描述了不同类型的结构前体前体和致孔剂前体。所得到的低应力低k多孔膜可用作集成电路制造应用中的低k电介质膜。

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