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1. 发明授权

US06590347B2 Light-emitting element matrix array 失效
公开(公告)号：US06590347B2
公开(公告)日：2003-07-08
申请号：US09937041
申请日：2001-09-20
申请人： Seiji Ohno , Yukihisa Kusuda , Shunsuke Ohtsuka , Yasunao Kuroda , Takahisa Arima , Hideaki Saitou
发明人： Seiji Ohno , Yukihisa Kusuda , Shunsuke Ohtsuka , Yasunao Kuroda , Takahisa Arima , Hideaki Saitou
IPC分类号： G09G310
CPC分类号： B41J2/45 , H01L27/153 , H01L33/0016
摘要： The cost of a light-emitting element matrix array is reduced by implementing a function equivalent to a light-emitting thyristor by elements different therefrom. A plurality of combinational element are arrayed in one line. The plurality of combinational elements are divided into groups n by n. The bases of transistors included in each group are separately connected to base-selecting lines and the anodes of light-emitting diodes included in each group are commonly connected to one anode terminal every group.

2. 发明授权

US06535234B2 Method for setting quantity of light of light-emitting element array 有权
公开(公告)号：US06535234B2
公开(公告)日：2003-03-18
申请号：US09937042
申请日：2001-09-20
申请人： Seiji Ohno , Yukihisa Kusuda , Shunsuke Ohtsuka , Yasunao Kuroda , Takahisa Arima , Hideaki Saitou
发明人： Seiji Ohno , Yukihisa Kusuda , Shunsuke Ohtsuka , Yasunao Kuroda , Takahisa Arima , Hideaki Saitou
IPC分类号： B41J2385
CPC分类号： B41J2/45
摘要： A method for setting the amount of light in an array of light-emitting thyristors, each thyristor having I-L characteristic in which a luminous efficiency is decreased in a lower current field, is provided. According to the method, the amount of light emitted from a light-emitting thyristor is set so that a predetermined exposure energy may be obtained without decreasing a luminous efficiency of a light-emitting thyristor. The density D of a current to be supplied to the light-emitting thyristor to obtain a predetermined exposure energy is selected so as to satisfy the range of 3×Dth

3. 发明授权

US06831673B2 Optical write head, and method of assembling the same 有权
标题翻译：光写头，及其组装方法
公开(公告)号：US06831673B2
公开(公告)日：2004-12-14
申请号：US09825889
申请日：2001-04-05
申请人： Masahide Wakisaka , Takahisa Arima , Harunobu Yoshida , Yukihisa Kusuda , Seiji Oono , Yasunao Kuroda
发明人： Masahide Wakisaka , Takahisa Arima , Harunobu Yoshida , Yukihisa Kusuda , Seiji Oono , Yasunao Kuroda
IPC分类号： B41J245
CPC分类号： B41J2/451 , H01L27/153 , H01L33/58 , H01L2224/05553 , H01L2224/45144 , H01L2224/48137 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/12041 , H01L2924/1301 , H01L2924/00014 , H01L2924/00
摘要： In an optical write head, a rod lens array, a substrate support member for supporting a substrate, and a driver circuit board are fixedly held by a support member. The support member and the substrate support member are formed from metallic material, and a frame of the rod lens array is formed from a glass plate. Further, distance between a light-emitting section of a light-emitting device array and a light-incident end face of the rod lens array is adjusted, by means of rotating eccentric pins. Further, light-emitting device array chips are die-bonded on the substrate bonded at predetermined positions on the substrate support member while the position of the substrate support member is taken as a reference plane.
摘要翻译：在光写入头中，杆状透镜阵列，用于支撑衬底的衬底支撑构件和驱动器电路板由支撑构件固定地保持。支撑构件和基板支撑构件由金属材料形成，并且杆状透镜阵列的框架由玻璃板形成。此外，通过旋转的偏心销来调节发光元件阵列的发光部和棒状透镜阵列的入射端面之间的距离。此外，发光装置阵列芯片被芯片接合在基板支撑构件上的预定位置处的基板上，同时将基板支撑构件的位置作为基准面。

4. 发明授权

US5177405A Self-scanning, light-emitting device 失效
标题翻译：自扫描，发光装置
公开(公告)号：US5177405A
公开(公告)日：1993-01-05
申请号：US557389
申请日：1990-07-24
申请人： Yukihisa Kusuda , Kiyoshi Tone , Ken Yamashita , Shuhei Tanaka , Seiji Ohno , Yasunao Kuroda , Nobuyuki Komaba
发明人： Yukihisa Kusuda , Kiyoshi Tone , Ken Yamashita , Shuhei Tanaka , Seiji Ohno , Yasunao Kuroda , Nobuyuki Komaba
IPC分类号： G09G3/32 , H01L27/15 , H04N1/40
CPC分类号： H04N1/40031 , G09G3/32 , H01L27/15 , G09G2300/08 , Y10T307/266
摘要： A self-scanning, light-emitting device comprises an array of cells or blocks each having a self-scanning transfer element and a light-emitting element. Turn-on state of the transfer element is transferred to the subsequent transfer element in synchronism with clock pulses. Each light-emitting element is connected to the corresponding transfer element so as to emit light upon supplying current under an ON state of the transfer element. The light-emitting array generates a light image in accordance with a light emission current.

5. 发明授权

US06496973B1 Method for designing mask pattern of a self scanning light emitting device 有权
标题翻译：用于设计自扫描发光器件的掩模图案的方法
公开(公告)号：US06496973B1
公开(公告)日：2002-12-17
申请号：US09831110
申请日：2001-05-04
申请人： Yukihisa Kusuda , Shunsuke Ohtsuka , Seiji Ohno
发明人： Yukihisa Kusuda , Shunsuke Ohtsuka , Seiji Ohno
IPC分类号： G06F1750
CPC分类号： B41J2/45 , B41J2002/453 , H01L27/156
摘要： A method of designing an optimum mask pattern for forming a metal line by an etching process, the metal line also effectively serving as a light-shielding layer, is provided. In this method, assuming that a mask pattern for forming a first metal line on a transparent insulating film has a width of “L1” overlapped with a first control electrode in a direction perpendicular to an array direction of of transfer elements, “L1” is selected so as to satisfy the following relation L1>(S+dS)+a, wherein “S” is the distance of side etching of the first metal line, “dS” is the dispersion of the distance of the side etching, and “a” is the misalignment of the mask pattern.
摘要翻译：提供了通过蚀刻工艺设计用于形成金属线的最佳掩模图案的方法，还有效地用作遮光层的金属线。在该方法中，假设在透明绝缘膜上形成第一金属线的掩模图案在与传送元件的排列方向垂直的方向上与第一控制电极重叠的宽度为“L1”，“L1”为选择为满足以下关系L1>（S + dS）+ a，其中“S”是第一金属线的侧蚀刻的距离，“dS”是侧蚀刻的距离的分散，“ a“是掩模图案的未对准。

6. 发明授权

US06300224B1 Methods of dicing semiconductor wafer into chips, and structure of groove formed in dicing area 有权
标题翻译：将半导体晶片切割成芯片的方法以及在切割区域中形成的凹槽的结构
公开(公告)号：US06300224B1
公开(公告)日：2001-10-09
申请号：US09806262
申请日：2001-03-28
申请人： Takahisa Arima , Yukihisa Kusuda
发明人： Takahisa Arima , Yukihisa Kusuda
IPC分类号： H01L2146
CPC分类号： H01L21/78 , H01L2224/48463 , H01L2924/10156
摘要： A method for dicing a semiconductor wafer into chips is provided, in which the peeling-off of a hard protective film on the surface of a semiconductor substrate may be avoided. Two parallel grooves are formed at a dicing area around a chip by an etching process. Then, SiO2 film is deposited on the GaAs substrate as a protective film. At this time, a bending portion at the interface between the protective films on the inner surface of the groove and the surface of the substrate. When the part between two grooves is cut by a dicing blade, a stress to the protective film caused by the edge of the blade is concentrated to the bending portion, resulting in a crack along the bending portion.
摘要翻译：提供了一种将半导体晶片切割成芯片的方法，其中可以避免半导体衬底的表面上的硬保护膜的剥离。通过蚀刻工艺在芯片周围的切割区域形成两个平行的沟槽。然后，将SiO 2膜作为保护膜沉积在GaAs衬底上。此时，在槽的内表面上的保护膜与基板的表面之间的界面处的弯曲部分。当通过切割刀片切割两个凹槽之间的部分时，由刀片边缘引起的对保护膜的应力集中到弯曲部分，导致沿着弯曲部分的裂纹。

7. 发明授权

US06614055B1 Surface light-emitting element and self-scanning type light-emitting device 有权
标题翻译：表面发光元件和自扫描型发光元件
公开(公告)号：US06614055B1
公开(公告)日：2003-09-02
申请号：US09710246
申请日：2000-11-10
申请人： Yukihisa Kusuda , Seiij Ohno , Shunsuke Ohtsuka
发明人： Yukihisa Kusuda , Seiij Ohno , Shunsuke Ohtsuka
IPC分类号： H01L2974
CPC分类号： B41J2/45 , B41J2/451 , B41J2002/453 , H01L27/153 , H01L33/0016 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/385 , Y10S257/918
摘要： A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center is shifted to an area where there is no light shielding layer thereon. When the surface light-emitting element is a surface light-emitting thyristor of the PNPN structure, it is necessary to have such a construction that part of the injected current is prevented from flowing toward the gate electrode to improve external light emission efficiency. The self-scanning light-emitting device of this invention is accomplished by using this type of surface light-emitting element.
摘要翻译：提供具有改善的外部发光效率的表面发光元件和使用该表面发光元件的自扫描型发光装置。为了提高外部发光效率，发光中心转移到其上没有遮光层的区域。当表面发光元件是PNPN结构的表面发光晶闸管时，需要具有这样的结构，即防止部分注入电流流向栅电极以提高外部发光效率。本发明的自扫描型发光装置通过使用这种类型的表面发光元件来实现。

8. 发明授权

US06180960B2 Surface light-emitting element and self-scanning type light-emitting device 有权
标题翻译：表面发光元件和自扫描型发光元件
公开(公告)号：US06180960B2
公开(公告)日：2001-01-30
申请号：US09043106
申请日：1998-11-04
申请人： Yukihisa Kusuda , Seiij Ohno , Shunsuke Ohtsuka
发明人： Yukihisa Kusuda , Seiij Ohno , Shunsuke Ohtsuka
IPC分类号： H01L3300
CPC分类号： B41J2/45 , B41J2/451 , B41J2002/453 , H01L27/153 , H01L33/0016 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/385 , Y10S257/918
摘要： A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center is shifted to an area where there is no light shielding layer thereon. To achieve this, an insulating layer is provided on the electrode portion above which there is a light-shielding layer at a portion making contact with the semiconductor layer thereunder so as to prevent the injected current from flowing from that electrode portion. To increase the amount of light emission, the peripheral length of the electrode is increased. With an electrode of the same area, the larger the peripheral length, the larger becomes the amount of light emission because the current injected from the electrode is distributed evenly over the entire surface, causing light to emit evenly. When the surface light-emitting element is a surface light-emitting thyristor of the PNPN structure, it is necessary to have such a construction that part of the injected current is prevented from flowing toward the gate electrode to improve external light emission efficiency. The self-scanning light-emitting device of this invention is accomplished by using this type of surface light-emitting element.
摘要翻译：提供具有改善的外部发光效率的表面发光元件和使用该表面发光元件的自扫描型发光装置。为了提高外部发光效率，发光中心转移到其上没有遮光层的区域。为了实现这一点，在电极部分上设置绝缘层，在其上方，在与其下面的半导体层接触的部分处具有遮光层，以防止注入的电流从该电极部分流出。为了增加发光量，电极的周长增加。对于具有相同面积的电极，周长越长，由于从电极注入的电流均匀分布在整个表面上，导致光均匀发射，所以发光量越大。当表面发光元件是PNPN结构的表面发光晶闸管时，需要具有这样的结构，即防止部分注入电流流向栅电极以提高外部发光效率。本发明的自扫描型发光装置通过使用这种类型的表面发光元件来实现。

9. 发明授权

US5756371A Process of producing thin film transistor array 失效
标题翻译：制造薄膜晶体管阵列的工艺
公开(公告)号：US5756371A
公开(公告)日：1998-05-26
申请号：US439444
申请日：1995-05-11
申请人： Seiji Ohno , Yukihisa Kusuda
发明人： Seiji Ohno , Yukihisa Kusuda
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/28 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/00
CPC分类号： H01L21/28008 , H01L27/1214 , H01L29/66765
摘要： A process of manufacture has the steps of forming a metal film on the insulating substrate, applying photoresist on the metal film, exposing the photoresist to light to form a photoresist pattern by developing, etching the metal film with the photoresist pattern as an etching mask, forming an insulating film on the insulating substrate by making the insulating substrate with the photoresist pattern contact a liquid-phase deposition treatment liquid, and removing the photoresist pattern or the combination of the photoresist pattern and the insulating film thereon. Through these steps, the metal film for use as the metal wiring to effect contact with the electrode of the TFT is buried in the surface of the insulating substrate. Consequently, the resistance of the metal wiring can greatly be reduced. Thereby, it is produced a thin film transistor capable of rendering an large area, large capacity display possible and free from a difference in level.
摘要翻译：制造方法具有以下步骤：在绝缘基板上形成金属膜，在金属膜上施加光致抗蚀剂，通过显影，用光致抗蚀剂图案蚀刻金属膜作为蚀刻掩模，使光致抗蚀剂曝光以形成光致抗蚀剂图案，通过使具有光致抗蚀剂图案的绝缘基板与液相沉积处理液接触，以及去除光致抗蚀剂图案或其上的光致抗蚀剂图案和绝缘膜的组合，在绝缘基板上形成绝缘膜。通过这些步骤，用作与TFT的电极接触的金属布线的金属膜被埋在绝缘基板的表面中。因此，可以大大降低金属布线的电阻。由此，制造出能够呈现大面积，大容量显示成为可能而且没有电平差的薄膜晶体管。

10. 发明授权

US06919583B2 End surface light-emitting element having increased external light emission efficiency and self-scanning light-emitting element array using the same 失效
标题翻译：具有增加的外部发光效率的端面发光元件和使用其的自扫描发光元件阵列
公开(公告)号：US06919583B2
公开(公告)日：2005-07-19
申请号：US10776822
申请日：2004-02-11
申请人： Takashi Tagami , Yukihisa Kusuda , Seiji Ohno , Nobuyuki Komaba
发明人： Takashi Tagami , Yukihisa Kusuda , Seiji Ohno , Nobuyuki Komaba
IPC分类号： B41J2/45 , H01L27/15 , H01L33/00 , H01L33/14 , H01L33/38 , H01L29/74
CPC分类号： H01L27/153 , B41J2/45 , B41J2002/453 , H01L33/0016 , H01L33/145 , H01L33/20 , H01L33/38
摘要： An edge-emitting thyristor having an improved external luminous efficiency and a self-scanning light-emitting device array comprising the edge-emitting thyristor are disclosed. To improve the external luminous efficiency of an edge-emitting light-emitting thyristor, a structure where the current injected from an electrode concentrates on and near the edge of the light-emitting thyristor is adopted.
摘要翻译：公开了具有改进的外部发光效率的边缘发射晶闸管和包括边缘发射晶闸管的自扫描发光器件阵列。为了提高边缘发光发光晶闸管的外部发光效率，采用从电极注入的电流集中在发光晶闸管的边缘附近的结构。

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