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1. 发明授权

US06448624B1 Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US06448624B1
公开(公告)日：2002-09-10
申请号：US08908939
申请日：1997-08-08
申请人： Seiichiro Ishio , Kenichi Ao , Minoru Murata , Yasuki Shimoyama , Tomohito Kunda , Norio Kitao
发明人： Seiichiro Ishio , Kenichi Ao , Minoru Murata , Yasuki Shimoyama , Tomohito Kunda , Norio Kitao
IPC分类号： H01L2982
CPC分类号： G01P15/123 , G01P1/006 , G01P15/0802 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.
摘要翻译：半导体传感器芯片具有通过光束支撑在框架中的重量部分，由此通过利用形成在梁上的电阻元件的压阻效应可以检测到大致±1G的加速度。半导体传感器芯片由具有与半导体传感器芯片的热膨胀系数相当的热膨胀系数经由框架支撑。框架和座椅通过与作为间隔件起作用的多个树脂珠混合的柔性粘合剂彼此粘合，并且在粘合状态下，通过将重量部分的空气阻力设定在重量部分和座椅到7到15毫米的范围。

2. 发明授权

US06270685B1 Method for producing a semiconductor 有权
标题翻译：半导体制造方法
公开(公告)号：US06270685B1
公开(公告)日：2001-08-07
申请号：US09436358
申请日：1999-11-09
申请人： Seiichiro Ishio , Kenichi Ao
发明人： Seiichiro Ishio , Kenichi Ao
IPC分类号： C23F100
CPC分类号： B81C1/0042 , G01P15/0802 , G01P15/123 , G01P2015/084 , H01L21/0334
摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the direction of the silicon substrate, and the other side stretches in the direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a nonetched portion corresponding to the main portion of the mask.
摘要翻译：在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。每个形状补偿部分具有长边和短边的矩形形状。此外，蚀刻掩模的长边和短边之一在硅衬底的<011>方向上延伸，另一侧在硅衬底的<0（超芯（1）} 1>方向上延伸。结果，可以将硅衬底蚀刻成预定形状，而不会在对应于掩模的主要部分的非蚀刻部分上形成大的拐角切口部分。

3. 发明授权

US6143584A Method for fabrication of a semiconductor sensor 失效
标题翻译：半导体传感器的制造方法
公开(公告)号：US6143584A
公开(公告)日：2000-11-07
申请号：US121893
申请日：1998-07-24
申请人： Tsuyoshi Fukada , Masakazu Kanosue , Kenichi Ao , Minoru Murata , Seiichiro Ishio
发明人： Tsuyoshi Fukada , Masakazu Kanosue , Kenichi Ao , Minoru Murata , Seiichiro Ishio
IPC分类号： G01P15/12 , H01L21/00
CPC分类号： G01P15/123 , G01P15/124
摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.
摘要翻译：半导体传感器具有量规电阻。量规电阻器通过接触孔与铝电极连接，形成桥接电路。在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。然后，测量电阻的电阻或桥接电路的输出。基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

4. 发明授权

US6130010A Method for producing a semiconductor dynamic sensor using an anisotropic etching mask 失效
标题翻译：使用各向异性蚀刻掩模制造半导体动态传感器的方法
公开(公告)号：US6130010A
公开(公告)日：2000-10-10
申请号：US772993
申请日：1996-12-23
申请人： Seiichiro Ishio , Kenichi Ao
发明人： Seiichiro Ishio , Kenichi Ao
IPC分类号： G01L1/18 , B81C1/00 , G01P15/08 , G01P15/12 , H01L21/033 , H01L21/306 , H01L29/84 , G03F9/00
CPC分类号： B81C1/0042 , G01P15/0802 , G01P15/123 , H01L21/0334 , G01P2015/084
摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.
摘要翻译：在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。每个形状补偿部分具有长边和短边的矩形形状。此外，蚀刻掩模的长边和短边之一在硅衬底的[011]方向上延伸，另一侧在硅衬底的[0 + E，ov1 + EE1]方向上延伸。结果，可以在对应于掩模的主要部分的未蚀刻部分上形成大的角落底切部分，将硅衬底蚀刻成预定形状。

5. 发明授权

US6065341A Semiconductor physical quantity sensor with stopper portion 有权
标题翻译：具有止动部分的半导体物理量传感器
公开(公告)号：US6065341A
公开(公告)日：2000-05-23
申请号：US209414
申请日：1998-12-11
申请人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
发明人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125
CPC分类号： B81B3/0051 , G01P15/0802 , G01P15/125 , B81B2201/0235 , G01P2015/0814
摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.
摘要翻译：可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。止动部分通过锚定部电连接到梁部分。因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

6. 发明授权

US5869876A Semiconductor strain sensor 失效
标题翻译：半导体应变传感器
公开(公告)号：US5869876A
公开(公告)日：1999-02-09
申请号：US788169
申请日：1997-01-24
申请人： Seiichiro Ishio , Kenichi Ao , Hiroshige Sugito
发明人： Seiichiro Ishio , Kenichi Ao , Hiroshige Sugito
IPC分类号： G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82 , H01L27/20
CPC分类号： G01P15/0802 , G01P15/124 , H01L29/84 , G01P2015/0814
摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.
摘要翻译：半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽，每个都具有相对较多数量的缺陷。因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。

7. 发明授权

US07141966B2 Rotation detecting apparatus 有权
公开(公告)号：US07141966B2
公开(公告)日：2006-11-28
申请号：US11167265
申请日：2005-06-28
申请人： Kazuyoshi Sumiya , Seiichiro Ishio
发明人： Kazuyoshi Sumiya , Seiichiro Ishio
IPC分类号： G01B7/30 , G01P15/08 , G01P15/105 , G01R33/038 , G01R33/09
CPC分类号： G01D5/147
摘要： Rotation detecting apparatus for detecting rotation of a magnetic rotor includes: a sensor chip having a magnetoresistive device; and a bias magnet. The magnetoresistive device is capable of detecting change of a magnetic vector near the sensor chip so that the rotation detecting apparatus detects the rotation of the magnetic rotor. The change of the magnetic vector is generated by the bias magnetic field and the rotation of the magnetic rotor. The bias magnet is disposed around the sensor chip so that a deflection angle of the magnetic vector is controllable.

8. 发明授权

US06789431B2 Diaphragm-type semiconductor pressure sensor 有权
标题翻译：隔膜型半导体压力传感器
公开(公告)号：US06789431B2
公开(公告)日：2004-09-14
申请号：US10428133
申请日：2003-05-02
申请人： Seiichiro Ishio
发明人： Seiichiro Ishio
IPC分类号： G01L900
CPC分类号： G01L9/0054
摘要： A diaphragm-type semiconductor pressure sensor includes a substantially rectangular (110) semiconductor substrate, which has four sides, an active surface of (110) crystallographic face orientation, and a back surface, which is opposite to the active surface, of (110) crystallographic face orientation. Each of the surfaces is surrounded by the four sides. Each of the four sides is at an angle of substantially 45 degrees with a crystallographic axis of orientation that is substantially parallel to the active surface. The substrate includes a diaphragm in the active surface. The diaphragm has been formed by forming a recess in the back surface. The diaphragm includes a gauge resistor. A pressure is detected on the basis of the variation in the resistance of the gauge resistor.
摘要翻译：一种隔膜式半导体压力传感器，包括：（110）具有四边的（110）结晶面取向的有源面和与该有源面相反的背面的大致矩形（110）半导体衬底，晶体面取向。每个表面都被四面包围。四个边中的每一个都是基本上平行于活性表面的大致45度的晶体轴<110>取向的角度。基板包括活动表面中的隔膜。隔膜通过在后表面形成凹部而形成。隔膜包括量规电阻。基于量规电阻器的电阻的变化来检测压力。

9. 发明授权

US06694814B2 Dynamic sensor having capacitance varying according to dynamic force applied thereto 有权
标题翻译：具有根据施加到其上的动态力而变化的电容的动态传感器
公开(公告)号：US06694814B2
公开(公告)日：2004-02-24
申请号：US10029025
申请日：2001-12-28
申请人： Seiichiro Ishio
发明人： Seiichiro Ishio
IPC分类号： G01P15125
CPC分类号： B81B3/0008 , B81B2201/0235 , G01P15/125 , G01P2015/0814
摘要： A dynamic sensor includes stationary electrodes and movable electrodes facing each other and forming a capacitance therebetween. The capacitance changes in accordance with a dynamic force such as acceleration imposed on the sensor. Plural projections are formed on the stationary electrodes to avoid or suppress electrode sticking between the movable electrodes and the stationary electrodes due to an excessive impact imposed on the sensor. The projections are formed to have various heights so that higher projections first hit the movable electrodes and thereby protect lower projections. Even after the higher projections are destroyed by the excessive impact, the lower projections remain intact and serve to prevent the electrode sticking by the excessive impact which may occur later.
摘要翻译：动态传感器包括固定电极和彼此面对并在其间形成电容的可动电极。电容根据传感器施加的加速度等动力而变化。在固定电极上形成多个突起，以避免或抑制由于施加在传感器上的过度冲击而导致的可动电极和固定电极之间的电极粘附。突起形成为具有各种高度，使得较高的突起首先撞击可动电极，从而保护较低的突起。即使在较高的投影被过度的冲击破坏之后，较低的投影仍然保持不变，并且用于防止由于稍后可能发生的过度的冲击而导致的电极粘附。

10. 发明申请

US20060284611A1 Current sensor having hall element 有权
标题翻译：电流传感器具有霍尔元件
公开(公告)号：US20060284611A1
公开(公告)日：2006-12-21
申请号：US11448810
申请日：2006-06-08
申请人： Seiichiro Ishio
发明人： Seiichiro Ishio
IPC分类号： G01R33/07
CPC分类号： G01R15/202
摘要： A current sensor includes: a current path; a semiconductor substrate; and a Hall element on the substrate. The Hall element detects a magnetic flux in a magnetic field caused by a detection object current. The Hall element generates a Hall voltage corresponding to the magnetic flux when a driving current flowing in a direction perpendicular to the semiconductor substrate is supplied to the Hall element, and when the magnetic flux having a component parallel to the semiconductor substrate affects the Hall element. The current path is disposed on the semiconductor substrate. The current path is electrically isolated from the Hall element.
摘要翻译：电流传感器包括：电流路径; 半导体衬底; 和基板上的霍尔元件。霍尔元件检测由检测对象电流引起的磁场中的磁通量。当向垂直于半导体衬底的方向流动的驱动电流被提供给霍尔元件时，霍尔元件产生与磁通相对应的霍尔电压，并且当具有与半导体衬底平行的分量的磁通量会影响霍尔元件。电流路径设置在半导体衬底上。电流路径与霍尔元件电隔离。

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