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1. 发明申请

US20030160023A1 Method of manufacturing a fluid injection device 有权
标题翻译：制造流体注射装置的方法
公开(公告)号：US20030160023A1
公开(公告)日：2003-08-28
申请号：US10373235
申请日：2003-02-24
申请人： BENO CORPORATION
发明人： In-Yao Lee , Chih-Ching Chen
IPC分类号： C03C025/68
CPC分类号： B81C1/0042 , B01L3/0241 , B41J2/16 , B41J2/1629 , B41J2/1631 , B81B2201/052 , B81B2203/0392 , B81C1/00595 , B81C2201/0136
摘要： A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.
摘要翻译：一种制造流体注射装置的方法。本发明的方法应用未蚀刻绝缘部分的补偿几何形状以增加用于蚀刻的附加补偿部分，或离子注入工艺以降低未蚀刻绝缘部分的蚀刻速率。因此，可以减少流体注入装置的隔离部分中的串扰或过冲，并且能够精确地制造流体注射装置。

2. 发明授权

US06270685B1 Method for producing a semiconductor 有权
标题翻译：半导体制造方法
公开(公告)号：US06270685B1
公开(公告)日：2001-08-07
申请号：US09436358
申请日：1999-11-09
申请人： Seiichiro Ishio , Kenichi Ao
发明人： Seiichiro Ishio , Kenichi Ao
IPC分类号： C23F100
CPC分类号： B81C1/0042 , G01P15/0802 , G01P15/123 , G01P2015/084 , H01L21/0334
摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the direction of the silicon substrate, and the other side stretches in the direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a nonetched portion corresponding to the main portion of the mask.
摘要翻译：在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。每个形状补偿部分具有长边和短边的矩形形状。此外，蚀刻掩模的长边和短边之一在硅衬底的<011>方向上延伸，另一侧在硅衬底的<0（超芯（1）} 1>方向上延伸。结果，可以将硅衬底蚀刻成预定形状，而不会在对应于掩模的主要部分的非蚀刻部分上形成大的拐角切口部分。

3. 发明授权

US10840107B2 Method for forming a cavity and a component having a cavity 有权
公开(公告)号：US10840107B2
公开(公告)日：2020-11-17
申请号：US16519404
申请日：2019-07-23
申请人： Robert Bosch GmbH
发明人： Simon Armbruster , Benjamin Steuer , Stefan Pinter , Dietmar Haberer , Jochen Tomaschko
IPC分类号： H01L21/48 , B81C1/00 , H01L21/308 , B81B1/00
CPC分类号： H01L21/4803 , B81B1/00 , B81C1/0042 , B81C1/00103 , H01L21/3083 , B81B2203/033 , B81B2203/0315 , B81B2203/0384 , B81C2201/013
摘要： A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

4. 发明授权

US06824960B2 Method of manufacturing a fluid injection device 有权
标题翻译：制造流体注射装置的方法
公开(公告)号：US06824960B2
公开(公告)日：2004-11-30
申请号：US10373235
申请日：2003-02-24
申请人： In-Yao Lee , Chih-Ching Chen
发明人： In-Yao Lee , Chih-Ching Chen
IPC分类号： G03C500
CPC分类号： B81C1/0042 , B01L3/0241 , B41J2/16 , B41J2/1629 , B41J2/1631 , B81B2201/052 , B81B2203/0392 , B81C1/00595 , B81C2201/0136
摘要： A method of manufacturing a fluid injection device. The method of the present invention applies a compensated geometric shape of the unetched isolating portions to increase the additional compensated portion for etching, or the ion implanting process to reduce the etching rate of the unetched isolating portions. Thus, crosstalk or overshoot in the isolating portions of the fluid injection device can be reduced, and the fluid injection device can be precisely manufactured in a small size.
摘要翻译：一种制造流体注射装置的方法。本发明的方法应用未蚀刻绝缘部分的补偿几何形状以增加用于蚀刻的附加补偿部分，或离子注入工艺以降低未蚀刻绝缘部分的蚀刻速率。因此，可以减少流体注入装置的隔离部分中的串扰或过冲，并且能够精确地制造流体注射装置。

5. 发明申请

US20170140943A1 METHOD FOR FORMING A CAVITY AND A COMPONENT HAVING A CAVITY 审中-公开
公开(公告)号：US20170140943A1
公开(公告)日：2017-05-18
申请号：US15318702
申请日：2015-05-29
申请人： Robert Bosch GmbH
发明人： Simon Armbruster , Benjamin Steuer , Stefan Pinter , Dietmar Haberer , Jochen Tomaschko
IPC分类号： H01L21/48 , B81B1/00 , B81C1/00
CPC分类号： H01L21/4803 , B81B1/00 , B81B2203/0315 , B81B2203/033 , B81B2203/0384 , B81C1/00103 , B81C1/0042 , B81C2201/013 , H01L21/3083
摘要： A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon substrate, and the first plane being a {111} plane of the silicon substrate, and situation of an etching mask on the surface of the silicon substrate. The etching mask has a retarding structure that protrudes into the mask opening, and a first etching projection region. All further edges of the mask opening outside the first etching projection region are situated essentially parallel to {111} planes of the silicon substrate. The method includes an anisotropic etching of the silicon substrate during a defined etching duration. An etching rate in the directions of the silicon substrate is lower than in other spatial directions, and the first retarding structure is undercut in a first undercut direction going out from the first etching projection region.

6. 发明授权

US08809200B2 Method of manufacturing a structure based on anisotropic etching, and silicon substrate with etching mask 有权
标题翻译：基于各向异性蚀刻的结构的制造方法和具有蚀刻掩模的硅衬底
公开(公告)号：US08809200B2
公开(公告)日：2014-08-19
申请号：US12271993
申请日：2008-11-17
申请人： Kazutoshi Torashima , Takahisa Kato , Takahiro Akiyama
发明人： Kazutoshi Torashima , Takahisa Kato , Takahiro Akiyama
IPC分类号： H01L21/302 , H01L21/461 , B81C1/00 , H01L21/308
CPC分类号： B81C1/0042 , B81C1/00626 , G02B26/0833 , H01L21/3086
摘要： A method of manufacturing a structure includes a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a basic etching mask corresponding to a target shape and having at least a first structure with a projecting corner and a second structure adjoining the first structure with an opening intervening therebetween, and a correction etching mask extending from the projecting corner of an etching mask of the first structure and connected to an etching mask of the second structure, and a second step of performing anisotropic etching of the monocrystal silicon substrate having the basic etching mask and the correction etching mask to form the target shape.
摘要翻译：一种制造结构的方法包括：在具有（100）表面作为主表面的单晶硅衬底上形成与目标形状对应的至少具有突出角的第一结构的基本蚀刻掩模的第一步骤，与第一结构邻接的第二结构，其间具有开口;以及校正蚀刻掩模，其从第一结构的蚀刻掩模的投影角延伸并连接到第二结构的蚀刻掩模，以及执行各向异性蚀刻的第二步骤具有基本蚀刻掩模和校正蚀刻掩模的单晶硅衬底以形成目标形状。

7. 发明授权

US6130010A Method for producing a semiconductor dynamic sensor using an anisotropic etching mask 失效
标题翻译：使用各向异性蚀刻掩模制造半导体动态传感器的方法
公开(公告)号：US6130010A
公开(公告)日：2000-10-10
申请号：US772993
申请日：1996-12-23
申请人： Seiichiro Ishio , Kenichi Ao
发明人： Seiichiro Ishio , Kenichi Ao
IPC分类号： G01L1/18 , B81C1/00 , G01P15/08 , G01P15/12 , H01L21/033 , H01L21/306 , H01L29/84 , G03F9/00
CPC分类号： B81C1/0042 , G01P15/0802 , G01P15/123 , H01L21/0334 , G01P2015/084
摘要： In a method for producing a semiconductor dynamic sensor, an anisotropic etching mask is formed on a (100) crystal orientation silicon substrate with a main portion and form-compensation portions formed at the corners of the main portion. Each of the form-compensation portions has a rectangular shape with a long side and a short side. Further, one of the long and short sides of the etching mask stretches in the [011] direction of the silicon substrate, and the other side stretches in the [011] direction of the silicon substrate. As a result, the silicon substrate can be etched into a predetermined shape without making large corner-undercut portions on a non-etched portion corresponding to the main portion of the mask.
摘要翻译：在制造半导体动态传感器的方法中，在主要部分的（100）晶体取向硅衬底上形成各向异性蚀刻掩模，并且形成在主要部分的角部处的形状补偿部分。每个形状补偿部分具有长边和短边的矩形形状。此外，蚀刻掩模的长边和短边之一在硅衬底的[011]方向上延伸，另一侧在硅衬底的[0 + E，ov1 + EE1]方向上延伸。结果，可以在对应于掩模的主要部分的未蚀刻部分上形成大的角落底切部分，将硅衬底蚀刻成预定形状。

8. 发明授权

US08343368B2 Method of fabricating a structure by anisotropic etching, and silicon substrate with an etching mask 有权
标题翻译：通过各向异性蚀刻制造结构的方法和具有蚀刻掩模的硅衬底
公开(公告)号：US08343368B2
公开(公告)日：2013-01-01
申请号：US12553015
申请日：2009-09-02
申请人： Toshiyuki Ogawa , Takahisa Kato , Kazutoshi Torashima , Takahiro Akiyama
发明人： Toshiyuki Ogawa , Takahisa Kato , Kazutoshi Torashima , Takahiro Akiyama
IPC分类号： B44C1/22
CPC分类号： B81C1/00396 , B81B2201/047 , B81B2203/0118 , B81C1/0042 , B81C1/00626 , H01L21/3083
摘要： In a fabrication method of fabricating a structure, a basic etching mask corresponding a target shape with a convex corner, and a correction etching mask with a first portion, a second portion and an opening portion are formed on a single-crystal silicon substrate, and the silicon substrate with the basic etching mask and the correction etching mask formed thereon is subjected to an anisotropic etching to form the silicon substrate having the target shape. The first portion extends in a direction, respective ends of the first portion are connected to the basic etching mask. The second portion is connected to a side of the first portion extending in the direction.
摘要翻译：在制造结构的制造方法中，在单晶硅衬底上形成对应于具有凸角的目标形状的基本蚀刻掩模和具有第一部分，第二部分和开口部分的校正蚀刻掩模，以及对其上形成有基本蚀刻掩模的硅衬底和形成在其上的校正蚀刻掩模进行各向异性蚀刻以形成具有目标形状的硅衬底。第一部分沿<110>方向延伸，第一部分的相应端部连接到基本蚀刻掩模。第二部分连接到沿<110>方向延伸的第一部分的一侧。

9. 发明申请

US20100053716A1 METHOD OF FABRICATING A STRUCTURE BY ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH AN ETCHING MASK 有权
标题翻译：通过非线性蚀刻制造结构的方法和具有蚀刻掩模的硅基板
公开(公告)号：US20100053716A1
公开(公告)日：2010-03-04
申请号：US12553015
申请日：2009-09-02
申请人： Toshiyuki Ogawa , Takahisa Kato , Kazutoshi Torashima , Takahiro Akiyama
发明人： Toshiyuki Ogawa , Takahisa Kato , Kazutoshi Torashima , Takahiro Akiyama
IPC分类号： G02B26/08 , H01L21/308 , H01L29/04
CPC分类号： B81C1/00396 , B81B2201/047 , B81B2203/0118 , B81C1/0042 , B81C1/00626 , H01L21/3083
摘要： In a fabrication method of fabricating a structure, a basic etching mask corresponding a target shape with a convex corner, and a correction etching mask with a first portion, a second portion and an opening portion are formed on a single-crystal silicon substrate with a (100) principal face, and the silicon substrate with the basic etching mask and the correction etching mask formed thereon is subjected to an anisotropic etching to form the silicon substrate having the target shape. The first portion extends in a direction, respective ends of the first portion are connected to the basic etching mask, and at least one end of the first portion is connected to the convex corner of the basic etching mask. The second portion is connected to a side of the first portion extending in the direction, the second portion includes at least one convex corner, and the opening portion extends straddling a boundary between the first portion and the second portion.
摘要翻译：在制造结构的制造方法中，将具有凸角的目标形状的基本蚀刻掩模和具有第一部分，第二部分和开口部分的校正蚀刻掩模形成在单晶硅衬底上，具有（100）主面，并且将具有基本蚀刻掩模的硅衬底和其上形成的校正蚀刻掩模进行各向异性蚀刻以形成具有目标形状的硅衬底。第一部分沿<110>方向延伸，第一部分的相应端部连接到基本蚀刻掩模，并且第一部分的至少一个端部连接到基本蚀刻掩模的凸角。第二部分连接到沿着<110>方向延伸的第一部分的一侧，第二部分包括至少一个凸形拐角，并且开口部分跨越第一部分和第二部分之间的边界延伸。

10. 发明申请

US20090130857A1 METHOD OF MANUFACTURING A STRUCTURE BASED ON ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK 有权
标题翻译：基于异相蚀刻的结构的制造方法和具有蚀刻掩模的硅基板
公开(公告)号：US20090130857A1
公开(公告)日：2009-05-21
申请号：US12271993
申请日：2008-11-17
申请人： Kazutoshi Torashima , Takahisa Kato , Takahiro Akiyama
发明人： Kazutoshi Torashima , Takahisa Kato , Takahiro Akiyama
IPC分类号： H01L21/302 , G03F1/00
CPC分类号： B81C1/0042 , B81C1/00626 , G02B26/0833 , H01L21/3086
摘要： A method of manufacturing a structure includes a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a basic etching mask corresponding to a target shape and having at least a first structure with a projecting corner and a second structure adjoining the first structure with an opening intervening therebetween, and a correction etching mask extending from the projecting corner of an etching mask of the first structure and connected to an etching mask of the second structure, and a second step of performing anisotropic etching of the monocrystal silicon substrate having the basic etching mask and the correction etching mask to form the target shape.
摘要翻译：一种制造结构的方法包括：在具有（100）表面作为主表面的单晶硅衬底上形成与目标形状对应的至少具有突出角的第一结构的基本蚀刻掩模的第一步骤，与第一结构邻接的第二结构，其间具有开口;以及校正蚀刻掩模，其从第一结构的蚀刻掩模的投影角延伸并连接到第二结构的蚀刻掩模，以及执行各向异性蚀刻的第二步骤具有基本蚀刻掩模和校正蚀刻掩模的单晶硅衬底以形成目标形状。

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