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1. 发明授权

US08075733B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08075733B2
公开(公告)日：2011-12-13
申请号：US12240293
申请日：2008-09-29
申请人： Seiichi Watanabe , Naoki Yasui , Susumu Tauchi , Yasuhiro Nishimori
发明人： Seiichi Watanabe , Naoki Yasui , Susumu Tauchi , Yasuhiro Nishimori
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32229 , H01J37/32449 , H01J2237/2001
摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.
摘要翻译：等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给房间。

2. 发明授权

US07807581B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07807581B2
公开(公告)日：2010-10-05
申请号：US11683014
申请日：2007-03-07
申请人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
发明人： Susumu Tauchi , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , G03F1/80 , H01J37/32522 , H01L21/67017 , H01L21/67109 , H01L21/6831
摘要： The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要翻译：本发明提供等离子体处理装置或等离子体处理方法，其可以以高精度和高效率蚀刻用于构成栅极结构的多层膜结构。一种等离子体处理方法，在对减压排出室117中的样品台112上的样品进行处理时，蚀刻0.1Pa以下的多层膜（包括高k和金属栅极），并且在样品台112中，通过使用用于压力调节并连接到处理室的压力计133和用于耗尽的主泵130进行调节。

3. 发明申请

US20080217295A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080217295A1
公开(公告)日：2008-09-11
申请号：US11683014
申请日：2007-03-07
申请人： SUSUMU TAUCHI , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
发明人： SUSUMU TAUCHI , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G03F1/80 , H01J37/32522 , H01L21/67017 , H01L21/67109 , H01L21/6831
摘要： The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要翻译：本发明提供等离子体处理装置或等离子体处理方法，其可以以高精度和高效率蚀刻用于构成栅极结构的多层膜结构。一种等离子体处理方法，在对减压排出室117中的样品台112上的样品进行处理时，蚀刻0.1Pa以下的多层膜（包括高k和金属栅极），并且在样品台112中，通过使用用于压力调节并连接到处理室的压力计133和用于耗尽的主泵130进行调节。

4. 发明申请

US20090194506A1 Plasma Processing Apparatus And Plasma Processing Method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090194506A1
公开(公告)日：2009-08-06
申请号：US12420370
申请日：2009-04-08
申请人： Hitoshi Tamura , Naoki Yasui , Seiichi Watanabe
发明人： Hitoshi Tamura , Naoki Yasui , Seiichi Watanabe
IPC分类号： B44C1/22
CPC分类号： H01L21/6833 , H01J37/32706
摘要： The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.
摘要翻译：本发明提供一种能够高精度地控制处理基板的电压的等离子体处理装置和等离子体处理方法，能够进行高精度的等离子体处理。根据本发明，使用具有预先制备的电压探针的处理基板来测量处理基板的电压，并且基于提供给静电卡盘机构的偏置电压和流过静电卡盘机构的偏置电流，数字地计算作为表示静电卡盘机构的电特性的阻抗的分量。然后，基于预定表达式，使用待测量的处理基板的偏置电压，流过静电卡盘机构的偏置电流和预先获取的阻抗的电容分量来估计处理基板的电压。

5. 发明授权

US07029594B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07029594B2
公开(公告)日：2006-04-18
申请号：US10658398
申请日：2003-09-10
申请人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
发明人： Naoki Yasui , Masahiro Sumiya , Hitoshi Tamura , Seiichi Watanabe
IPC分类号： G01R31/00 , H01L21/00
CPC分类号： H01J37/32174 , H01J37/32082
摘要： A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
摘要翻译：一种等离子体处理方法，用于对处理气体供给装置将处理气体进入真空处理室的真空处理室内的待处理物体进行等离子体处理，将晶片电极置于真空处理室内，以安装物体为了进行处理，晶片偏置功率发生器对晶片电极施加自偏压，等离子体发生器在真空处理室内产生等离子体。等离子体处理方法使在任意电压下对物体产生的高频电压的电压波形的正侧电压或负侧电压平坦化。

6. 发明申请

US20050155711A1 Plasma processing apparatus and method with controlled biasing functions 审中-公开
标题翻译：具有受控偏置功能的等离子体处理装置和方法
公开(公告)号：US20050155711A1
公开(公告)日：2005-07-21
申请号：US11053236
申请日：2005-02-09
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , C23F1/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Accordingly, current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
摘要翻译：使用等离子体处理诸如半导体器件的样品表面的处理技术。施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

7. 发明授权

US06875366B2 Plasma processing apparatus and method with controlled biasing functions 失效
标题翻译：具有受控偏置功能的等离子体处理装置和方法
公开(公告)号：US06875366B2
公开(公告)日：2005-04-05
申请号：US09946491
申请日：2001-09-06
申请人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
发明人： Masahiro Sumiya , Naoki Yasui , Seiichi Watanabe
IPC分类号： C23C16/44 , C23C16/50 , C23C16/509 , H01L21/00
CPC分类号： C23C16/5096 , C23C16/4401 , H01J37/32165
摘要： Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed thereto are controlled to be opposite to each other so that either one of the electrodes is forced to always function as ground. Therefore, the current flowing to cross the magnetic field for controlling the plasma is decreased, and the potential distribution difference in the surface of the sample to be processed is reduced, so that the charging damage can be suppressed. Energy of ions incident to the sample to be processed can be controlled to perform high-precision etching. The plasma potential can also be controlled so that the strength of the ion impact to the inner wall of the chamber can be reduced, thereby reducing particles detached from the inner wall of the processing apparatus to improve the throughput.
摘要翻译：使用等离子体处理诸如半导体器件的样品表面的处理技术。施加到与其相对的基板电极和天线电极的RF偏置电压的相位被控制为彼此相反，使得电极中的任一个被强制地始终用作接地。因此，流过用于控制等离子体的磁场的电流减少，并且待处理样品的表面的电位分布差减小，从而可以抑制充电损伤。可以控制入射到待处理样品的离子的能量，以进行高精度蚀刻。也可以控制等离子体电位，使离子冲击室内壁的强度降低，从而减少从处理装置的内壁脱离的颗粒，以提高生产量。

8. 发明授权

US09390941B2 Sample processing apparatus, sample processing system, and method for processing sample 有权
标题翻译：样品处理装置，样品处理系统和样品处理方法
公开(公告)号：US09390941B2
公开(公告)日：2016-07-12
申请号：US13510296
申请日：2010-11-16
申请人： Seiichi Watanabe , Yutaka Kozuma , Tooru Aramaki , Naoki Yasui , Norihiko Ikeda , Hiroaki Takikawa
发明人： Seiichi Watanabe , Yutaka Kozuma , Tooru Aramaki , Naoki Yasui , Norihiko Ikeda , Hiroaki Takikawa
IPC分类号： H01L21/306 , C23F1/00 , H01L21/3213 , G03F7/40 , H01J37/32 , H01L21/027 , H01L21/28
CPC分类号： H01L21/32139 , G03F7/40 , H01J37/32357 , H01J37/32807 , H01J37/32816 , H01J37/32871 , H01L21/0273 , H01L21/28035
摘要： There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.
摘要翻译：提供了一种能够以优异的再现性将真空紫外光施加到晶片的整个表面的VUV光处理装置，并且可以以优异的再现性以VUV（真空紫外线）光处理晶片。 VUV光处理装置包括：与气体供给装置和排气装置连接的室，所述室能够减小所述室内的压力; 等离子体光源，其产生包括200nm以下的波长的VUV光，所述等离子体光源包括在所述室中产生等离子体的等离子体发生单元; VUV透射滤光器，其设置在放置有待处理样品的台和样品之间，VUV透射滤光器透射包含200nm以下的波长的VUV光，不透射电子，离子和基团在等离子体中，VUV透射滤光器的外径尺寸大于样品的尺寸。

9. 发明授权

US07615132B2 Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method 失效
标题翻译：等离子体处理装置具有具有下垂补偿功能的高频电源和等离子体处理方法
公开(公告)号：US07615132B2
公开(公告)日：2009-11-10
申请号：US10795353
申请日：2004-03-09
申请人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
发明人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266 , H01J37/32706
摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.
摘要翻译：提供了适用于高速和高清晰刻蚀的等离子体处理装置。通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压，结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

10. 发明申请

US20050081999A1 Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method 失效
标题翻译：等离子体处理装置具有具有下垂补偿功能的高频电源和等离子体处理方法
公开(公告)号：US20050081999A1
公开(公告)日：2005-04-21
申请号：US10795353
申请日：2004-03-09
申请人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
发明人： Naoki Yasui , Seiichi Watanabe , Masahiro Sumiya , Hitoshi Tamura
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/3266 , H01J37/32706
摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.
摘要翻译：提供了适用于高速和高清晰刻蚀的等离子体处理装置。通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压，结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

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