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1. 发明授权

US5276386A Microwave plasma generating method and apparatus 失效
标题翻译：微波等离子体生成方法和装置
公开(公告)号：US5276386A
公开(公告)日：1994-01-04
申请号：US669512
申请日：1991-03-14
申请人： Seiichi Watanabe , Makoto Nawata , Ryooji Fukuyama , Yutaka Kakehi , Saburo Kanai , Yoshinao Kawasaki
发明人： Seiichi Watanabe , Makoto Nawata , Ryooji Fukuyama , Yutaka Kakehi , Saburo Kanai , Yoshinao Kawasaki
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32266 , H01J37/32192
摘要： In a microwave plasma generating method and apparatus according to the present invention, a slow wave structure is disposed in the propagation region of microwaves, and the microwaves are introduced at a delayed phase velocity into a discharge chamber so that treating gases are transformed into plasma. Thus, the phase velocity of the microwaves is adjusted to a relatively low velocity, at which charged particles are distributed most densely in the plasma, so that the energy may be efficiently transformed to many more charged particles in the plasma. Thus, the plasma of high density is generated to improve a plasma treating rate.
摘要翻译：在根据本发明的微波等离子体产生方法和装置中，在微波的传播区域中设置慢波结构，并且将微波以延迟的相速度引入放电室，从而将处理气体转化为等离子体。因此，微波的相速度被调节到相对较低的速度，在该速度下，带电粒子最密集地分布在等离子体中，使得能量可以有效地转换成等离子体中的更多带电粒子。因此，产生高密度的等离子体以提高等离子体处理速率。

2. 发明授权

US4971651A Microwave plasma processing method and apparatus 失效
标题翻译：微波等离子体处理方法及装置
公开(公告)号：US4971651A
公开(公告)日：1990-11-20
申请号：US475266
申请日：1990-02-05
申请人： Seiichi Watanabe , Makoto Nawata , Ryooji Fukuyama , Yutaka Kakehi , Saburo Kanai , Keiji Ueyama
发明人： Seiichi Watanabe , Makoto Nawata , Ryooji Fukuyama , Yutaka Kakehi , Saburo Kanai , Keiji Ueyama
IPC分类号： H01J37/32
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32275
摘要： This invention relates to a microwave plasma processing method and apparatus.An electromagnetic field intensity distribution of a microwave, which is incident into a plasma generation chamber and is again incident due to irregular reflection, is made uniform by uniforming means fixed inside a waveguide, a processing gas is converted to plasma by use of the microwave having the uniformed electromagnetic field intensity distribution, and a sample is plasma-processed by the resulting plasma. Accordingly, the electro-magnetic field of the microwave, which is incident, and is again incident, into the plasma generation region and locally increases a plasma density, is absorbed, attenuated or diffused by the uniforming means so that the distribution of the plasma density is made uniform and uniform processing can be effected.
摘要翻译：本发明涉及微波等离子体处理方法和装置。入射到等离子体产生室中并且由于不规则反射再次入射的微波的电磁场强度分布通过固定在波导内部的均匀装置而被均匀化，处理气体通过使用具有均匀的电磁场强度分布和样品由所得等离子体进行等离子体处理。因此，入射并再次入射到等离子体产生区域中并局部增加等离子体密度的微波的电磁场被均匀化装置吸收，衰减或扩散，使得等离子体密度的分布制成均匀且均匀的加工。

3. 发明授权

US5914051A Microwave plasma processing method and apparatus 失效
标题翻译：微波等离子体处理方法及装置
公开(公告)号：US5914051A
公开(公告)日：1999-06-22
申请号：US443438
申请日：1995-05-18
申请人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata
发明人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata
IPC分类号： H01J37/32 , H01L21/302 , B65D6/34 , C23F1/02
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238 , H01J37/32266
摘要： A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio.
摘要翻译：一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于对诸如半导体装置基板，蚀刻工艺，成膜工艺等。微波仅与其行进方向相对应地被引入放电装置，由此等离子体密度分布的均匀性对应于待处理的表面样品可以急剧增强，使得通过利用这种等离子体处理的样品可以在待处理的表面内获得增强的处理均匀性。控制放电块的温度以减少沉积在放电块上的等离子聚合物的量，增加存在于等离子体中的量并增加沉积在样品上的量以提高选择比。

4. 发明授权

US5804033A Microwave plasma processing method and apparatus 失效
标题翻译：微波等离子体处理方法及装置
公开(公告)号：US5804033A
公开(公告)日：1998-09-08
申请号：US29241
申请日：1993-03-10
申请人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata , Muneo Furuse , Tetsunori Kaji
发明人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata , Muneo Furuse , Tetsunori Kaji
IPC分类号： H01L21/205 , H01L21/302 , H01L21/31
CPC分类号： H01J37/32229 , H01J37/32238 , H01J37/32266
摘要： The present invention relates to a microwave plasma processing method and apparatus. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to be processed. In addition, homogeneity and stability of the plasma are improved by inserting a cavity resonator between the microwave generator and plasma processing (plasma generating) chamber, and coupling the cavity resonator and plasma processing chamber such that microwaves substantially only of a desired mode (e.g., TE.sub.11) pass into the plasma processing chamber. Such coupling to provide microwaves substantially only of circular TE.sub.11 mode can be achieved by providing the coupling such that a ratio of diameter of the discharge block, where the plasma is generated, to the diameter of the cavity resonator, is 0.345.
摘要翻译：本发明涉及一种微波等离子体处理方法和装置。根据本发明，微波仅与其行进方向相对应地被引入到放电装置中，从而可以显着提高对应于样品待处理表面的等离子体密度分布的均匀性，使得通过利用这种等离子体处理的样品可以在被处理表面内获得增强的处理均匀性。此外，通过在微波发生器和等离子体处理（等离子体产生）室之间插入空腔谐振器，并耦合空腔谐振器和等离子体处理室，使得微波基本上仅仅是期望的模式（例如， TE11）进入等离子体处理室。通过提供耦合使得产生等离子体的放电块的直径与腔谐振器的直径的比率为0.345，可以实现基本上仅提供圆形TE11模式的微波的这种耦合。

5. 发明授权

US5785807A Microwave plasma processing method and apparatus 失效
标题翻译：微波等离子体处理方法及装置
公开(公告)号：US5785807A
公开(公告)日：1998-07-28
申请号：US765834
申请日：1991-09-26
申请人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata
发明人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata
IPC分类号： H01J37/32 , H01L21/302
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238 , H01J37/32266
摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.
摘要翻译：本发明涉及一种微波等离子体处理方法和装置。更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于样品，例如半导体器件衬底，蚀刻工艺，成膜工艺等。根据本发明，微波仅与其行进方向相对应地被引入放电装置，从而使等离子体密度可以大大提高与样品表面对应的分布，使得利用这种等离子体处理的样品能够在待处理的表面内获得增强的加工均匀性。

6. 发明授权

US5520771A Microwave plasma processing apparatus 失效
标题翻译：微波等离子体处理装置
公开(公告)号：US5520771A
公开(公告)日：1996-05-28
申请号：US443437
申请日：1995-05-18
申请人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata
发明人： Saburo Kanai , Yoshinao Kawasaki , Kazuaki Ichihashi , Seiichi Watanabe , Makoto Nawata
IPC分类号： H01J37/32 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32229 , H01J37/32192 , H01J37/32238 , H01J37/32266
摘要： The present invention relates to a microwave plasma processing method and apparatus. More particularly, it relates to a microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc.According to the present invention, the microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed.
摘要翻译：本发明涉及一种微波等离子体处理方法和装置。更具体地说，本发明涉及一种微波等离子体处理方法和装置，其中波导部分包括从波导隔离用于微波传播并在其中具有等离子体产生区域的放电装置，该方法和装置非常适合于样品，例如半导体器件衬底，蚀刻工艺，成膜工艺等。根据本发明，微波仅与其行进方向相对应地被引入放电装置，从而使等离子体密度可以大大提高与样品表面对应的分布，使得利用这种等离子体处理的样品能够在待处理的表面内获得增强的加工均匀性。

7. 发明授权

US5433789A Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves 失效
标题翻译：用于产生等离子体的方法和装置以及使用模式限制性微波的半导体处理方法
公开(公告)号：US5433789A
公开(公告)日：1995-07-18
申请号：US010051
申请日：1993-01-28
申请人： Yutaka Kakehi , Yoshinao Kawasaki , Keizo Suzuki , Kazuo Nojiri , Hiromichi Enami , Tetsunori Kaji , Seiichi Watanabe , Yoshifumi Ogawa
发明人： Yutaka Kakehi , Yoshinao Kawasaki , Keizo Suzuki , Kazuo Nojiri , Hiromichi Enami , Tetsunori Kaji , Seiichi Watanabe , Yoshifumi Ogawa
IPC分类号： C23C16/511 , H01J37/32 , C23C16/30 , H05H1/46
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192 , H01J37/32266 , H01J37/32284
摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.
摘要翻译：等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。波导具有大的横截面面积，以实现等离子体的大区域。等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导轨阵列。

8. 发明授权

US5646489A Plasma generator with mode restricting means 失效
标题翻译：具有模式限制装置的等离子发生器
公开(公告)号：US5646489A
公开(公告)日：1997-07-08
申请号：US432861
申请日：1995-05-02
申请人： Yutaka Kakehi , Yoshinao Kawasaki , Keizo Suzuki , Kazuo Nojiri , Hiromichi Enami , Tetsunori Kaji , Seiichi Watanabe , Yoshifumi Ogawa
发明人： Yutaka Kakehi , Yoshinao Kawasaki , Keizo Suzuki , Kazuo Nojiri , Hiromichi Enami , Tetsunori Kaji , Seiichi Watanabe , Yoshifumi Ogawa
IPC分类号： C23C16/511 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192 , H01J37/32266 , H01J37/32284
摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.
摘要翻译：等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。波导具有大的横截面面积，以实现等离子体的大区域。等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导子阵列。

9. 发明授权

US09034148B2 Method for producing electrically-conducting material with modified surface 有权
标题翻译：具有改性表面的导电材料的制造方法
公开(公告)号：US09034148B2
公开(公告)日：2015-05-19
申请号：US13819121
申请日：2011-08-26
申请人： Masayasu Nagoshi , Kaoru Sato , Seiichi Watanabe , Souki Yoshida
发明人： Masayasu Nagoshi , Kaoru Sato , Seiichi Watanabe , Souki Yoshida
IPC分类号： C25D5/10 , C25D5/16 , C23C26/00 , C25F1/00 , C25F3/00
CPC分类号： C25D5/16 , C23C26/00 , C25F1/00 , C25F3/00
摘要： A method to inexpensively and efficiently produce conductive materials on the surface of which a nano-level fine structure is formed includes surface modification including immersing a stable anode electrode and a workpiece as a cathode electrode, the workpiece including a conductive material with a work surface, in an electrolytic solution, then applying a voltage not less than a first voltage and less than a second voltage between the stable anode electrode and the workpiece as the cathode electrode immersed in the electrolytic solution, thereby modifying the work surface, the first voltage being a voltage corresponding to a current value that is ½ of the sum of a first maximum current value appearing first in a positive voltage region and a first minimum current value appearing first in the positive voltage region with respect to voltage-current characteristics of a surface modification treatment system, the second voltage exhibiting a complete-state plasma.
摘要翻译：在其上形成纳米级精细结构的表面上廉价有效地制造导电材料的方法包括表面改性，包括浸渍稳定的阳极电极和工件作为阴极，工件包括具有工作表面的导电材料，在电解液中，在浸渍在电解液中的阴极电极之间施加稳定的阳极和工件之间的不小于第一电压和小于第二电压的电压，从而改变工作表面，第一电压为对应于相对于表面改性处理的电压 - 电流特性，正电压区域中首先出现的第一最大电流值和正电压区域中首先出现的第一最小电流值之和的电流值的1/2的电压系统，第二电压呈现完全状态的等离子体。

10. 发明申请

US20130243975A1 METHOD FOR PRODUCING SURFACE-TREATED METALLIC MATERIAL 有权
标题翻译：生产表面处理金属材料的方法
公开(公告)号：US20130243975A1
公开(公告)日：2013-09-19
申请号：US13988848
申请日：2011-11-24
申请人： Masayasu Nagoshi , Kaoru Sato , Seiichi Watanabe , Souki Yoshida
发明人： Masayasu Nagoshi , Kaoru Sato , Seiichi Watanabe , Souki Yoshida
IPC分类号： C23C16/44
CPC分类号： C23C16/4414 , C23C26/00 , C25C7/00 , C25D9/08 , C25D9/10 , C25D11/026 , C25D11/34
摘要： There is provided a method for producing a surface-treated metallic material, by use of which a metallic material having a stable and excellent sliding characteristic can be produced with a low environmental load without covering the metallic material surface with an oxide film. The method for producing a surface-treated metallic material includes immersing an anode and a cathode in an electrolyte solution, placing a metallic material used as a material to be treated above the surface of the electrolyte solution, and applying a voltage between the anode and the cathode to treat the metallic material surface, the voltage being equal to or higher than a voltage for causing a complete plasma state.
摘要翻译：提供一种表面处理金属材料的制造方法，通过使用具有稳定且优异的滑动特性的金属材料，能够以低的环境负荷生产而不用氧化膜覆盖金属材料表面。表面处理金属材料的制造方法包括将阳极和阴极浸渍在电解液中，将用作待处理材料的金属材料放置在电解质溶液的表面之上，并在阳极和阳极之间施加电压阴极，以处理金属材料表面，电压等于或高于用于引起完全等离子体状态的电压。

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