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1. 发明授权

US12148923B2 Method for preparing silicon by using gas-phase electroreduction 有权
公开(公告)号：US12148923B2
公开(公告)日：2024-11-19
申请号：US18558536
申请日：2022-05-30
申请人： BEILab corp.
发明人： Jihyun Seo
IPC分类号： H01M4/38 , C01B33/03 , C23C16/24 , C23C16/44 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M10/0525 , H01M4/02 , H01M4/86
CPC分类号： H01M4/386 , C01B33/03 , C23C16/24 , C23C16/4414 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/362 , H01M4/364 , H01M10/0525 , C01P2006/40 , H01M2004/027 , H01M2004/8684
摘要： The present invention relates to a method for preparing silicon by using gas-phase electroreduction and, more specifically, to a method in which a silicon-based compound is gas-phase supplied, without a liquid medium, onto the surface of a base metal having a potential applied thereto, and thus silicon is reduced and applied onto the surface of the base metal.

2. 发明授权

US3847653A Method and apparatus for fabricating composite ceramic members 失效
标题翻译：制备复合陶瓷成员的方法和装置
公开(公告)号：US3847653A
公开(公告)日：1974-11-12
申请号：US30141172
申请日：1972-10-27
申请人： ATOMIC ENERGY COMMISSION
发明人： ROY P , SIMPSON J , AITKEN E
IPC分类号： C04B35/486 , C04B41/50 , C04B41/87 , C23C16/00 , C23C16/04 , C23C16/40 , C23C16/44 , G01N27/406 , G01N27/407 , H01M8/12 , C23C11/08
CPC分类号： G01N27/4073 , C04B35/486 , C04B41/009 , C04B41/5025 , C04B41/87 , C23C16/045 , C23C16/40 , C23C16/4414 , G01N27/4067 , H01M8/1246 , H01M2300/0094 , Y02E60/525 , Y02P70/56 , C04B41/4529 , C04B41/455 , C04B35/48
摘要： Method and apparatus for fabrication of composite ceramic members having particular application for measuring oxygen activities in liquid sodium. The method involves the simultaneous deposition of ThO2: 15 percent Y2O3 on a sintered stabilized zirconia member by decomposition of gaseous ThCl4 and YCl3 and by reacting with oxygen gas.
摘要翻译：具有特别用于测量液态钠中的氧活性的复合陶瓷构件的制造方法和装置。该方法包括通过气态ThCl4和YCl3的分解以及与氧气反应，同时在烧结的稳定的氧化锆构件上沉积ThO 2：15％的Y 2 O 3。

3. 发明申请

US20140287150A1 CONDENSATION ON SURFACES 审中-公开
标题翻译：表面粗糙度
公开(公告)号：US20140287150A1
公开(公告)日：2014-09-25
申请号：US14220094
申请日：2014-03-19
申请人： President and Fellows of Harvard College , Massachusetts Institute of Technology
发明人： Nenad MILJKOVIC , Daniel John PRESTON , Ryan ENRIGHT , Evelyn N. WANG
IPC分类号： C23C16/44
CPC分类号： C23C16/4414 , B01D5/0042
摘要： A uniform external field can enhance condensation on a superhydrophobic surface. Jumping droplets on superhydrophobic surfaces accumulate a positive charge which promises the manipulation and control of jumping behavior using external electric fields.
摘要翻译：均匀的外界可以增强超疏水表面的冷凝。在超疏水表面上跳跃的液滴积累了正电荷，这使得能够使用外部电场来操纵和控制跳跃行为。

4. 发明授权

US06093297A Method for depositing solid electrolyte layer 失效
标题翻译：固体电解质层的沉积方法
公开(公告)号：US06093297A
公开(公告)日：2000-07-25
申请号：US162536
申请日：1998-09-29
申请人： Keiji Tomura , Tohru Shiomitsu , Takashi Ogawa , Yasuhiko Manabe , Yotaro Ohno
发明人： Keiji Tomura , Tohru Shiomitsu , Takashi Ogawa , Yasuhiko Manabe , Yotaro Ohno
IPC分类号： C08F2/58 , C23C16/40 , C23C16/44 , C23C28/00 , C25D13/02 , H01M8/02 , H01M8/12 , C23F17/00 , C25D13/00 , C25D15/00
CPC分类号： H01M8/1253 , C23C16/405 , C23C16/4414 , C25D13/02 , H01M8/1213 , Y02E60/525 , Y02P70/56
摘要： A method for depositing solid electrolyte layer includes the steps of depositing a solid electrolyte layer on an electrode substrate by an electrophoretic deposition process, firing the solid electrolyte layer at a temperature of 1,300.degree. C. or less, and depositing another electrolyte layer on the fired solid electrolyte layer by a CVD-EVD process. In accordance with the method, thin and sufficiently dense solid electrolyte layers which are suitable for solid electrolyte fuel cells can be easily produced.
摘要翻译：固体电解质层的沉积方法包括以下步骤：通过电泳沉积工艺在电极基板上沉积固体电解质层，在1300℃或更低的温度下煅烧固体电解质层，并在烧制后沉积另一个电解质层固体电解质层通过CVD-EVD工艺。根据该方法，可以容易地制造适合于固体电解质燃料电池的薄且充分致密的固体电解质层。

5. 发明授权

US5989634A Process of manufacturing solid oxygen ion conducting oxide layers 失效
标题翻译：制造固体氧离子传导氧化物层的工艺
公开(公告)号：US5989634A
公开(公告)日：1999-11-23
申请号：US882579
申请日：1997-06-25
申请人： Arnold O. Isenberg
发明人： Arnold O. Isenberg
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4414 , C23C16/40 , C23C16/4412
摘要： Electrochemical vapor deposition (EVD) of oxygen ion conducting and mixed conducting, oxygen-ionic/electronic, oxide layers is achieved at near atmospheric pressure process conditions by employing metals and metal compounds for removal and/or recovery of the free halogen byproduct of the EVD reaction. The metals and metal compounds are employed as solids, vapors, and as oxides in intimate mixture with carbon directly within the deposition zone together with the substrates to be coated. The process leads to significant cost reduction, for instance, in the fabrication of thin layers of solid oxygen ion conducting electrolytes, for fuel cells, gas separators, and gas sensors, when compared to state-of-the-art EVD processes which are conducted under vacuum conditions.
摘要翻译：通过使用金属和金属化合物去除和/或回收EVD的游离卤素副产物，在接近大气压工艺条件下实现氧离子传导和混合导电氧离子/电子氧化物层的电化学气相沉积（EVD）反应。金属和金属化合物作为固体，蒸气和作为氧化物与碳直接与沉积区域内的碳直接与待涂覆的基底一起使用。该过程导致显着的成本降低，例如在制造薄层的固体氧离子传导电解质，用于燃料电池，气体分离器和气体传感器时，与进行的现有技术的EVD工艺相比在真空条件下。

6. 发明授权

US4831965A Fabrication of solid oxide fuel cell by electrochemical vapor deposition 失效
标题翻译：通过电化学气相沉积制备固体氧化物燃料电池
公开(公告)号：US4831965A
公开(公告)日：1989-05-23
申请号：US184476
申请日：1988-04-21
申请人： Riley Brian , Bernard E. Szreders
发明人： Riley Brian , Bernard E. Szreders
IPC分类号： C23C16/44 , H01M8/12
CPC分类号： C23C16/4414 , H01M8/12
摘要： In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.
摘要翻译：在高温固体氧化物燃料电池（SOFC）中，将诸如镁掺杂的亚铬酸镧的导电互连材料的不渗透性高密度薄层和诸如氧化钇稳定的氧化锆的电解质材料沉积到多孔载体上 /空气电极基板表面通过电化学气相沉积的方法在高温（约1100〜-1300℃）下进行。在这个过程中，所涉及的特定金属的混合氯化物以水蒸汽在气态下反应，导致在支撑管/空气电极基底上沉积厚度在20-50微米之间的不透水薄氧化物层。诸如热管的内部加热器被放置在支撑管/空气电极基板内并且在其中引起均匀的温度分布，从而在特别适用于大规模，商业制造的布置中提供精确和均匀的氧化物沉积动力学的SOFCs。

7. 发明公开

US20240229235A9 Electrolyte and Method for Cobalt Electrodeposition 审中-公开
公开(公告)号：US20240229235A9
公开(公告)日：2024-07-11
申请号：US18277695
申请日：2022-02-08
申请人： AVENI
发明人： Hermine Marie Berthon , Mikailou Thiam , Dominique Suhr , Yeeseul Kim , Céline Pascale Doussot
IPC分类号： C23C16/44 , C23C16/04 , C23C16/14
CPC分类号： C23C16/4414 , C23C16/045 , C23C16/14
摘要： The present invention relates to a method for fabricating cobalt interconnects and an electrolyte enabling it to be implemented. The electrolyte of pH less than 4.0 comprises cobalt ions, chloride ions and organic additives, including an alpha-hydroxy carboxylic acid and an amine chosen from polyethyleneimine or benzotriazole.

8. 发明公开

US20240052490A1 MONOALKOXYSILANES AND DIALKOXYSILANES AND DENSE ORGANOSILICA FILMS MADE THEREFROM 审中-公开
公开(公告)号：US20240052490A1
公开(公告)日：2024-02-15
申请号：US17641792
申请日：2020-09-11
申请人： VERSUM MATERIALS US, LLC
发明人： MANCHAO XIAO , WILLIAM ROBERT ENTLEY , DANIEL P. SPENCE , RAYMOND NICHOLAS VRTIS , JENNIFER LYNN ANNE ACHTYL , ROBERT GORDON RIDGEWAY , XINJIAN LEI
IPC分类号： C23C16/50 , C23C16/44 , C23C16/40 , B05D1/00
CPC分类号： C23C16/50 , C23C16/4414 , C23C16/402 , B05D1/62
摘要： A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono- or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

9. 发明申请

US20140335215A1 BLANK FOR NANOIMPRINT MOLD, NANOIMPRINT MOLD, AND METHODS FOR PRODUCING SAID BLANK AND SAID NANOIMPRINT MOLD 审中-公开
标题翻译： NANOIMPRINT模具用空白，NANOIMPRINT模具，以及生产上述空白和制作NANOIMPRINT模具的方法
公开(公告)号：US20140335215A1
公开(公告)日：2014-11-13
申请号：US14338825
申请日：2014-07-23
申请人： ASAHI GLASS COMPANY, LIMITED
发明人： Kazuyuki Hayashi , Kazunobu Maeshige , Yasutomi Iwahashi
IPC分类号： B29C59/00 , C23C16/34 , C23C16/503 , B29C33/38 , C23C16/44
CPC分类号： B29C59/002 , B29C33/3842 , B29C33/424 , B82Y10/00 , B82Y40/00 , C03C17/225 , C03C2217/281 , C03C2218/33 , C23C14/0641 , C23C16/34 , C23C16/4414 , C23C16/503 , G03F7/0002 , Y10T428/265
摘要： The present invention relates to a blank for a nanoimprint mold, comprising a glass substrate and a hard mask layer formed on the glass substrate, wherein the hard mask layer contains chromium (Cr) and nitrogen (N) and has a Cr content of 45 to 95 at %, an N content of 5 to 55 at % and a total content of Cr and N of 95 at % or more and the thickness of the hard mask layer is 1.5 nm or more and less than 5 nm.
摘要翻译：本发明涉及一种用于纳米压印模具的坯料，其包括玻璃基板和形成在玻璃基板上的硬掩模层，其中硬掩模层含有铬（Cr）和氮（N），并且Cr含量为45至 95原子％，N含量为5〜55原子％，Cr和N的总含量为95原子％以上，硬掩模层的厚度为1.5nm以上且小于5nm。

10. 发明申请

US20130243975A1 METHOD FOR PRODUCING SURFACE-TREATED METALLIC MATERIAL 有权
标题翻译：生产表面处理金属材料的方法
公开(公告)号：US20130243975A1
公开(公告)日：2013-09-19
申请号：US13988848
申请日：2011-11-24
申请人： Masayasu Nagoshi , Kaoru Sato , Seiichi Watanabe , Souki Yoshida
发明人： Masayasu Nagoshi , Kaoru Sato , Seiichi Watanabe , Souki Yoshida
IPC分类号： C23C16/44
CPC分类号： C23C16/4414 , C23C26/00 , C25C7/00 , C25D9/08 , C25D9/10 , C25D11/026 , C25D11/34
摘要： There is provided a method for producing a surface-treated metallic material, by use of which a metallic material having a stable and excellent sliding characteristic can be produced with a low environmental load without covering the metallic material surface with an oxide film. The method for producing a surface-treated metallic material includes immersing an anode and a cathode in an electrolyte solution, placing a metallic material used as a material to be treated above the surface of the electrolyte solution, and applying a voltage between the anode and the cathode to treat the metallic material surface, the voltage being equal to or higher than a voltage for causing a complete plasma state.
摘要翻译：提供一种表面处理金属材料的制造方法，通过使用具有稳定且优异的滑动特性的金属材料，能够以低的环境负荷生产而不用氧化膜覆盖金属材料表面。表面处理金属材料的制造方法包括将阳极和阴极浸渍在电解液中，将用作待处理材料的金属材料放置在电解质溶液的表面之上，并在阳极和阳极之间施加电压阴极，以处理金属材料表面，电压等于或高于用于引起完全等离子体状态的电压。

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