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1. 发明授权

US06807214B2 Integrated laser and electro-absorption modulator with improved extinction 失效
公开(公告)号：US06807214B2
公开(公告)日：2004-10-19
申请号：US10211865
申请日：2002-08-01
申请人： Scott W. Corzine , David Bour
发明人： Scott W. Corzine , David Bour
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/3403 , H01S5/34306 , H01S5/34373
摘要： A modulated light emitter having a laser and modulator constructed on a common substrate. The light emitter includes an active layer having a quantum well (QW) layer sandwiched between first and second barrier layers. The active layer includes a laser region and a modulator region connected by a waveguide. The laser region emits light when a potential is applied across the active layer in the laser region. The modulator region has a first state in which the modulator region absorbs the generated light and a second state in which the modulator region transmits the generated light. The modulator region assumes either the first or second state depending on the potential across the modulator region. The QW layer in the modulator region is under a tensile strain, which provides improved light absorption in the first state.

2. 发明授权

US07656919B2 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth 失效
标题翻译：具有通过外延层过度生长制造的环形激光器的半导体系统
公开(公告)号：US07656919B2
公开(公告)日：2010-02-02
申请号：US12359326
申请日：2009-01-25
申请人： Michael Renne Ty Tan , Scott W. Corzine , David P. Bour
发明人： Michael Renne Ty Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

3. 发明授权

US06553051B1 System for optically pumping a long wavelength laser using a short wavelength laser 有权
标题翻译：使用短波长激光器对长波长激光进行光学泵浦的系统
公开(公告)号：US06553051B1
公开(公告)日：2003-04-22
申请号：US09703389
申请日：2000-10-31
申请人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
发明人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
IPC分类号： H01S3091
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/02284 , H01S5/041 , H01S5/18369 , H01S5/32366 , H01L2924/00014
摘要： An optical assembly includes an optical subassembly containing a prefabricated long wavelength laser optically coupled to a prefabricated short wavelength laser located in a housing. The optical subassembly may be removably installed in the housing in which the short wavelength laser is contained. The short wavelength laser optically pumps the long wavelength laser resulting in a long wavelength laser output. The optical subassembly allows the independent fabrication, optimization and testing of the short wavelength laser and the long wavelength laser.
摘要翻译：光学组件包括光学子组件，其包含光学耦合到位于壳体中的预制短波长激光器的预制长波长激光器。光学子组件可以可拆卸地安装在容纳短波长激光器的壳体中。短波长激光器对长波长激光器进行光泵浦，产生长波长激光输出。光学子组件允许短波长激光器和长波长激光器的独立制造，优化和测试。

4. 发明授权

US06429466B2 Integrated circuit substrate that accommodates lattice mismatch stress 有权
标题翻译：集成电路基板，适应晶格失配应力
公开(公告)号：US06429466B2
公开(公告)日：2002-08-06
申请号：US09774199
申请日：2001-01-29
申请人： Yong Chen , Scott W. Corzine , Theodore I. Kamins , Michael J. Ludowise , Pierre H. Mertz , Shih-Yuan Wang
发明人： Yong Chen , Scott W. Corzine , Theodore I. Kamins , Michael J. Ludowise , Pierre H. Mertz , Shih-Yuan Wang
IPC分类号： H01L31072
CPC分类号： H01L21/7624 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02538 , H01L21/0254 , H01L21/02658 , H01L21/26533
摘要： A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The second material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the first material by the second material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates. In the case of silicon-based substrates, the buried layer is preferably SiO2 that is sufficiently malleable at the growth temperature to allow the deformation of the isolated substrate layer.
摘要翻译：一种用于生长晶体层的方法，其包括在第二材料的晶体衬底的生长表面上的第一材料，其中第一材料和第二材料具有不同的晶格常数。在衬底中产生掩埋层，使得掩埋层将衬底的包含生长表面的衬底与衬底的其余部分隔离。然后将第二种材料在生长温度下沉积在生长表面上。衬底的隔离层的厚度小于在其上结晶第二材料时在第一材料的晶格中产生缺陷的厚度。掩埋层在生长温度下具有足够的延展性，以允许隔离层的晶格变形，而不使基底的其余部分变形。本发明可用于在硅衬底上生长III-V半导体材料层。在硅基基板的情况下，掩埋层优选是在生长温度下足够有韧性的SiO 2，以允许隔离的基底层的变形。

5. 发明授权

US07941024B2 Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 失效
标题翻译：具有通过单步MOCVD制造的集成波导光栅的埋入异质结构器件
公开(公告)号：US07941024B2
公开(公告)日：2011-05-10
申请号：US12207521
申请日：2008-09-10
申请人： David P. Bour , Scott W. Corzine
发明人： David P. Bour , Scott W. Corzine
IPC分类号： G02B6/10
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

6. 发明申请

US20090129426A1 Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth 失效
标题翻译：具有由外延层过度生长制成的环形激光器的半导体系统
公开(公告)号：US20090129426A1
公开(公告)日：2009-05-21
申请号：US12359326
申请日：2009-01-25
申请人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
发明人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

7. 发明授权

US07440666B2 Buried heterostucture device having integrated waveguide grating fabricated by single step MOCVD 失效
标题翻译：具有通过单步MOCVD制造的集成波导光栅的埋式异质结构装置
公开(公告)号：US07440666B2
公开(公告)日：2008-10-21
申请号：US11154034
申请日：2005-06-16
申请人： David P. Bour , Scott W. Corzine
发明人： David P. Bour , Scott W. Corzine
IPC分类号： G02B6/10 , H01S5/12
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

8. 发明授权

US07352788B2 Nitride semiconductor vertical cavity surface emitting laser 失效
标题翻译：氮化物半导体垂直腔表面发射激光器
公开(公告)号：US07352788B2
公开(公告)日：2008-04-01
申请号：US11203699
申请日：2005-08-15
申请人： Scott W. Corzine , David P. Bour
发明人： Scott W. Corzine , David P. Bour
IPC分类号： H01S5/00
CPC分类号： H01S5/0424 , B82Y20/00 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/20 , H01S5/34333 , H01S2304/12
摘要： In one aspect, a VCSEL includes a base region that has a vertical growth part laterally adjacent a first optical reflector and a lateral growth part that includes nitride semiconductor material vertically over at least a portion of the first optical reflector. An active region has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part of the base region and includes a first dopant of a first electrical conductivity type. A contact region includes a nitride semiconductor material laterally adjacent the active region and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector is vertically over the active region and forms with the first optical reflector a vertical optical cavity overlapping at least a portion of the at least one quantum well of the active region. A method of fabricating a VCSEL also is described.
摘要翻译：在一个方面，VCSEL包括具有垂直生长部分的横向邻近于第一光学反射器的基底区域和在第一光学反射体的至少一部分上方垂直包括氮化物半导体材料的横向生长部分。有源区域在基极区域的横向生长部分的至少一部分上垂直地具有至少一个氮化物半导体量子阱，并且包括第一导电类型的第一掺杂物。接触区域包括横向邻近有源区的氮化物半导体材料和与第一导电类型相反的第二导电类型的第二掺杂剂。第二光学反射器垂直于有源区域并且与第一光学反射器形成垂直的光学腔，其与有源区的至少一个量子阱的至少一部分重叠。还描述了制造VCSEL的方法。

9. 发明授权

US07142342B2 Electroabsorption modulator 有权
标题翻译：电吸收调制器
公开(公告)号：US07142342B2
公开(公告)日：2006-11-28
申请号：US10453376
申请日：2003-06-02
申请人： David P. Bour , Ashish Tandon , Scott W. Corzine , Chaokun Lin
发明人： David P. Bour , Ashish Tandon , Scott W. Corzine , Chaokun Lin
IPC分类号： G02F1/03 , G02F1/07
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0157
摘要： The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.
摘要翻译：电吸收调制器包括p-i-n结结构，其包括有源层，p型包层和n型包覆层，活性层夹在包层之间。电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层，当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层调制器。缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。增加的场强提高了电吸收调制器的消光比。

10. 发明授权

US07033938B2 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region 失效
标题翻译：制造长波长砷化铟镓（InGaAsN）活性区域的方法
公开(公告)号：US07033938B2
公开(公告)日：2006-04-25
申请号：US10785747
申请日：2004-02-23
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
摘要翻译：通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

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