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1. 发明授权

US07142342B2 Electroabsorption modulator 有权
标题翻译：电吸收调制器
公开(公告)号：US07142342B2
公开(公告)日：2006-11-28
申请号：US10453376
申请日：2003-06-02
申请人： David P. Bour , Ashish Tandon , Scott W. Corzine , Chaokun Lin
发明人： David P. Bour , Ashish Tandon , Scott W. Corzine , Chaokun Lin
IPC分类号： G02F1/03 , G02F1/07
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0157
摘要： The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.
摘要翻译：电吸收调制器包括p-i-n结结构，其包括有源层，p型包层和n型包覆层，活性层夹在包层之间。电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层，当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层调制器。缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。增加的场强提高了电吸收调制器的消光比。

2. 发明授权

US06730944B1 InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
标题翻译：基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层
公开(公告)号：US06730944B1
公开(公告)日：2004-05-04
申请号：US10354276
申请日：2003-01-30
申请人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
发明人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/3434 , H01S5/3436 , H01S2302/00
摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
摘要翻译：本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。激光器结构包括InAsP的量子阱层。量子阱层夹在第一阻挡层和第二阻挡层之间。每个阻挡层表现出比量子阱层更高的带隙能量。此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

3. 发明授权

US07033938B2 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region 失效
标题翻译：制造长波长砷化铟镓（InGaAsN）活性区域的方法
公开(公告)号：US07033938B2
公开(公告)日：2006-04-25
申请号：US10785747
申请日：2004-02-23
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
摘要翻译：通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

4. 发明授权

US07656919B2 Semiconductor system having a ring laser fabricated by epitaxial layer overgrowth 失效
标题翻译：具有通过外延层过度生长制造的环形激光器的半导体系统
公开(公告)号：US07656919B2
公开(公告)日：2010-02-02
申请号：US12359326
申请日：2009-01-25
申请人： Michael Renne Ty Tan , Scott W. Corzine , David P. Bour
发明人： Michael Renne Ty Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

5. 发明授权

US07638810B2 GaN laser with refractory metal ELOG masks for intracavity contact 失效
$GaN laser with refractory metal ELOG masks for intracavity contact$
标题翻译：具有难熔金属的GaN激光器用于腔内接触的ELOG掩模
公开(公告)号：US07638810B2
公开(公告)日：2009-12-29
申请号：US11223622
申请日：2005-09-09
申请人： David P. Bour , Scott W Corzine
发明人： David P. Bour , Scott W Corzine
IPC分类号： H01L29/207
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0425 , H01S5/18308 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2009 , H01S5/22 , H01S2304/12
摘要： Refractory metal ELOG mask are used for GaN based VCSELs and edge emitter structures to serve as intracavity contacts. In these structures the refractory metal ELOG masks serve both as ohmic contact metals as well as masks for ELOG.
摘要翻译：耐火金属ELOG掩模用于GaN基VCSEL和边缘发射器结构，用作腔内接触。在这些结构中，难熔金属ELOG掩模既用作欧姆接触金属，也用作ELOG的掩模。

6. 发明授权

US07502405B2 Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth 失效
标题翻译：具有通过外延层过度生长制造的环形激光器的半导体系统
公开(公告)号：US07502405B2
公开(公告)日：2009-03-10
申请号：US11209994
申请日：2005-08-22
申请人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
发明人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083 , H01S5/00 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

7. 发明授权

US07274719B2 Buried heterostructure quantum cascade laser 失效
标题翻译：埋入异质结量子级联激光器
公开(公告)号：US07274719B2
公开(公告)日：2007-09-25
申请号：US11076599
申请日：2005-03-09
申请人： David P. Bour , Scott W Corzine
发明人： David P. Bour , Scott W Corzine
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2226 , H01S5/3402
摘要： A buried heterostructure quantum cascade laser structure uses reverse biased junction to achieve current blocking. Doping and ridge width of the structure may be adjusted to provide effective mode discrimination.
摘要翻译：掩埋异质结量子级联激光器结构使用反向偏置结实现电流阻塞。可以调整结构的掺杂和脊宽以提供有效的模式鉴别。

8. 发明申请

US20090068778A1 Buried Heterostructure Device Having Integrated Waveguide Grating Fabricated By Single Step MOCVD 失效
标题翻译：具有通过单步MOCVD制造的集成波导光栅的掩埋异质结构器件
公开(公告)号：US20090068778A1
公开(公告)日：2009-03-12
申请号：US12207521
申请日：2008-09-10
申请人： David P. Bour , Scott W. Corzine
发明人： David P. Bour , Scott W. Corzine
IPC分类号： H01L21/00
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window having a periodic grating profile. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并且限定具有周期性光栅轮廓的细长生长窗口。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

9. 发明授权

US07502401B2 VCSEL system with transverse P/N junction 失效
标题翻译：具有横向P / N结的VCSEL系统
公开(公告)号：US07502401B2
公开(公告)日：2009-03-10
申请号：US11187477
申请日：2005-07-22
申请人： Jeffrey N. Miller , Scott W. Corzine , David P. Bour
发明人： Jeffrey N. Miller , Scott W. Corzine , David P. Bour
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/2203 , H01S5/341 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a VCSEL system comprising forming a first mirror, forming a vertical cavity on the first mirror, the vertical cavity including integrated multiple gain regions and forming a transverse p/n junction laterally to the integrated multiple gain regions, wherein forward biasing the transverse p/n junction causes photon emission in the integrated multiple gain regions.
摘要翻译：本发明提供了一种VCSEL系统，包括形成第一反射镜，在第一反射镜上形成垂直空腔，垂直空腔包括集成的多增益区域，并横向形成横向p / n接合到集成的多增益区域，其中向前偏置横向p / n结在整合的多增益区域中引起光子发射。

10. 发明授权

US07184640B2 Buried heterostructure device fabricated by single step MOCVD 失效
标题翻译：通过单步MOCVD制造的埋置异质结构器件
公开(公告)号：US07184640B2
公开(公告)日：2007-02-27
申请号：US10787349
申请日：2004-02-25
申请人： David P. Bour , Scott W. Corzine
发明人： David P. Bour , Scott W. Corzine
IPC分类号： G02B6/10
CPC分类号： B82Y20/00 , G02B6/131 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.
摘要翻译：该器件是包括生长表面，生长掩模，光波导核心台面和包层的光电器件或透明波导器件。生长掩模位于半导体表面上并限定细长的生长窗。光波导核心台面位于生长窗口中，具有梯形横截面形状。包覆层覆盖光波导芯体台面并在生长掩模的至少一部分上延伸。这样的器件通过提供包括生长表面的晶片来制造，通过在第一生长温度下的微选择性区域生长在生长表面上生长光波导核心台面并且在第二生长温度下覆盖包含材料的光波导芯台面，低于第一生长温度。

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