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1. 发明授权

US06824932B2 Self-aligned alternating phase shift mask patterning process 有权
标题翻译：自对准交替相移掩模图案化工艺
公开(公告)号：US06824932B2
公开(公告)日：2004-11-30
申请号：US10164242
申请日：2002-06-05
申请人： Scott J. Bukofsky , Carlos A. Fonseca , Michael S. Hibbs , Lars W. Liebmann
发明人： Scott J. Bukofsky , Carlos A. Fonseca , Michael S. Hibbs , Lars W. Liebmann
IPC分类号： G03F900
CPC分类号： G03F1/30 , G03F7/0035 , G03F7/2022
摘要： A method and apparatus for making phase shift masks are provided wherein an anti-reflective coating used on an opaque pattern layer of the mask fully covers the opaque pattern layer and has not been etched in the etching process to form the phase shift mask. A two-exposure method to form the phase shift mask is used wherein a photoresist having a defined dose-to-clear level is coated on the surface of the mask and the lower surface of the mask is exposed to a blanket exposure in an energy amount less than the dose-to-clear level. The open areas of the upper surface of the mask to be etched are exposed to an energy dose in an amount less than the dose-to-clear level, with the sum of the amounts of the lower surface energy and upper surface energy being at least the dose-to-clear level. The method and apparatus minimizes and/or avoids etching of the anti-reflective coating.
摘要翻译：提供了一种用于制造相移掩模的方法和装置，其中在掩模的不透明图案层上使用的抗反射涂层完全覆盖不透明图案层，并且在蚀刻工艺中没有被蚀刻以形成相移掩模。使用形成相移掩模的双曝光方法，其中具有确定的剂量至清晰度的光致抗蚀剂被涂覆在掩模的表面上，并且掩模的下表面以能量的量曝光小于剂量到清除水平。要蚀刻的掩模的上表面的开放区域暴露于小于剂量至清除水平的量的能量剂量，其中下表面能和上表面能的量的总和至少为剂量到清晰度。该方法和装置使抗反射涂层的蚀刻最小化和/或避免。

2. 发明授权

US06901576B2 Phase-width balanced alternating phase shift mask design 失效
标题翻译：相位平衡交替相移掩模设计
公开(公告)号：US06901576B2
公开(公告)日：2005-05-31
申请号：US10300240
申请日：2002-11-20
申请人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur
发明人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur
IPC分类号： G03C5/00 , G03F1/30 , G03F9/00 , G06F9/40 , G06F17/50
CPC分类号： G03F1/30
摘要： A method is provided for designing an altPSM mask including a substrate. The method includes the following steps. Provide a circuit layout. Identify critical elements of the circuit layout. Provide a cutoff layout dimension. Identify critical segments of the circuit layout which are critical elements with a sub-cutoff dimension less than the cutoff dimension. Create basic phase shapes associated with the critical segments. Remove layout violations from the phase shapes. Determine whether the widths of phase shapes associated with a critical segment have unequal narrower and wider widths. If YES, then widen each narrower phase shape to match the width of wider phase shape associated with the critical segment and repeat the steps starting with removal of layout violations until the test answer is NO. When the test answer is NO, provide a layout pattern to an output.
摘要翻译：提供了一种用于设计包括衬底的altPSM掩模的方法。该方法包括以下步骤。提供电路布局。识别电路布局的关键要素。提供截止布局维度。识别电路布局的关键部分，这些部分是具有小于截止尺寸的子切割尺寸的关键元件。创建与关键段相关联的基本相位形状。从相位形状中删除布局违例。确定与临界段相关联的相位形状的宽度是否具有不相等的较窄和较宽的宽度。如果是，则扩大每个较窄的相位形状以匹配与关键段相关联的较宽相位形状的宽度，并重复从删除布局违规开始的步骤，直到测试答案为否。当测试答案为NO时，向输出提供布局模式。

3. 发明授权

US06609245B2 Priority coloring for VLSI designs 失效
标题翻译： VLSI设计的优先着色
公开(公告)号：US06609245B2
公开(公告)日：2003-08-19
申请号：US09997657
申请日：2001-11-29
申请人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Young O. Kim
发明人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Young O. Kim
IPC分类号： G06F1750
CPC分类号： G03F1/30
摘要： A method and computer program product is described for optimizing the design of a circuit layout that assigns binary properties to the design elements according to a hierarchy of rules. For example, the design of an alternating phase shifted mask (altPSM) is optimized first according to rules that assign phase shapes that maximize image quality for critical circuit elements, and then further optimized to minimize mask manufacturability problems without significantly increasing the complexity of the design process flow. Further optimization of the design according to additional rules can be performed in a sequentially decreasing priority order. As the priority of rules decrease, some violation of lower priority rules may be acceptable, as long as higher priority rules are not violated.
摘要翻译：描述了一种方法和计算机程序产品，用于优化根据规则层级将二进制属性分配给设计元素的电路布局的设计。例如，交替相移掩模（altPSM）的设计首先根据规定分配相位形状的规则进行优化，该相位形状使关键电路元件的图像质量最大化，然后进一步优化以最小化掩模可制造性问题，而不会显着增加设计的复杂性工艺流程。根据附加规则进一步优化设计可以按顺序降低的优先顺序执行。由于规则的优先级减少，只要优先级较高的规则不被侵犯，某些违反较低优先权规则就可以接受。

4. 发明授权

US06795961B2 Priority coloring for VLSI designs 失效
标题翻译： VLSI设计的优先着色
公开(公告)号：US06795961B2
公开(公告)日：2004-09-21
申请号：US10430148
申请日：2003-05-06
申请人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Young O. Kim
发明人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Young O. Kim
IPC分类号： G06F1750
CPC分类号： G03F1/30
摘要： A method and computer program product is described for optimizing the design of a circuit layout that assigns binary properties to the design elements according to a hierarchy of rules. For example, the design of an alternating phase shifted mask (altPSM) is optimized first according to rules that assign phase shapes that maximize image quality for critical circuit elements, and then further optimized to minimize mask manufacturability problems without significantly increasing the complexity of the design process flow. Further optimization of the design according to additional rules can be performed in a sequentially decreasing priority order. As the priority of rules decrease, some violation of lower priority rules may be acceptable, as long as higher priority rules are not violated.
摘要翻译：描述了一种方法和计算机程序产品，用于优化根据规则层级将二进制属性分配给设计元素的电路布局的设计。例如，交替相移掩模（altPSM）的设计首先根据规定分配相位形状的规则进行优化，该相位形状使关键电路元件的图像质量最大化，然后进一步优化以最小化掩模可制造性问题，而不会显着增加设计的复杂性工艺流程。根据附加规则进一步优化设计可以按顺序降低的优先顺序执行。由于规则的优先级减少，只要优先级较高的规则不被侵犯，某些违反较低优先权规则就可以接受。

5. 发明授权

US06777147B1 Method for evaluating the effects of multiple exposure processes in lithography 有权
标题翻译：用于评估光刻中多次曝光过程的影响的方法
公开(公告)号：US06777147B1
公开(公告)日：2004-08-17
申请号：US10249944
申请日：2003-05-21
申请人： Carlos A. Fonseca , Scott J. Bukofsky , Kafai Lai
发明人： Carlos A. Fonseca , Scott J. Bukofsky , Kafai Lai
IPC分类号： G03F900
CPC分类号： G03F7/705 , G03F7/70466 , G03F7/70625 , G03F7/70641
摘要： A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually and then obtaining a composite set of images by sequentially perturbing images from a first or previous exposure step by weighted images from the subsequent exposure step. Preferably, the expected images are determined by simulation in the form of normalized aerial images over a range of defocus for each exposure step, and the weighting factor used is the dose-ratio of the subsequent exposure dose to the prior step exposure dose. The resulting composite set of images may be used to evaluate multiple exposure processes, for example, to provide an estimate of yield for a given budget of dose and focus errors, or alternatively, to provide specifications for tool error budgets required to obtain a target yield.
摘要翻译：一种评估多次曝光光刻处理的处理效果的方法，其通过首先单独确定每个曝光步骤或多次曝光处理的预期图像集合，然后通过依次扰动来自第一曝光步骤或先前曝光步骤的图像来获得复合图像组通过后续曝光步骤的加权图像。优选地，通过在每个曝光步骤的散焦范围上的归一化空间图像的形式的模拟来确定预期图像，并且所使用的加权因子是随后的曝光剂量与先前阶段曝光剂量的剂量比。所得到的复合图像集合可以用于评估多个曝光过程，例如，为给定的剂量和焦点误差预算提供产量的估计，或者提供用于获得目标产量所需的工具误差预算的规格。

6. 发明授权

US06964032B2 Pitch-based subresolution assist feature design 失效
标题翻译：基于间距的分解辅助功能设计
公开(公告)号：US06964032B2
公开(公告)日：2005-11-08
申请号：US10378579
申请日：2003-02-28
申请人： Lars W. Liebmann , Allen H. Gabor , Ronald L. Gordon , Carlos A. Fonseca , Martin Burkhardt
发明人： Lars W. Liebmann , Allen H. Gabor , Ronald L. Gordon , Carlos A. Fonseca , Martin Burkhardt
IPC分类号： G03F1/00 , G06F17/50 , H01L21/027
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125 , G06F17/5068 , G06F2217/12
摘要： A method of designing a mask for imaging an integrated circuit (IC) design layout is provided to efficiently configure subresolution assist features (SRAFs) corresponding to an optimally configured annular illumination source of a lithographic projection system. A critical pitch is identified for the IC design, and optimal inner and outer radial coordinates of an annular illumination source are determined so that the resulting image projected through the mask will be optimized for the full range of pitches in the design layout. A relationship is provided for determining an optimal inner radius and outer radius for the annular illumination source. The number and placement of SRAFs are added to the mask design so that the resulting range of pitches substantially correspond to the critical pitch. The method of configuring SRAFs so that the image will have optimal characteristics, such as good contrast and good depth of focus, is fast.
摘要翻译：提供了一种设计用于对集成电路（IC）设计布局进行成像的掩模的方法，以有效地配置对应于光刻投影系统的最佳配置的环形照明源的分解辅助特征（SRAF）。确定IC设计的关键音调，并且确定环形照明光源的最佳内外径向坐标，以便通过掩模投射的所得图像将针对设计布局中的全部音高进行优化。提供了用于确定环形照明源的最佳内半径和外半径的关系。将SRAF的数量和位置添加到掩模设计中，使得所得到的间距范围基本上对应于临界间距。配置SRAF的方法是使图像具有最佳特征，如良好的对比度和良好的聚焦深度。

7. 发明授权

US06927005B2 Alternating phase shift mask design with optimized phase shapes 有权
标题翻译：交替相移掩模设计，具有优化的相位形状
公开(公告)号：US06927005B2
公开(公告)日：2005-08-09
申请号：US10801880
申请日：2004-03-16
申请人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Mark A. Lavin
发明人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Mark A. Lavin
IPC分类号： G01F9/00 , G03C5/00 , G03F1/30 , G03F9/00 , G06F17/50
CPC分类号： G03F1/30
摘要： A method is described for designing an alternating phase shifted mask (altPSM) by optimally selecting the width of phase shapes. The selection of optimal phase shape widths is achieved by providing a lithography metric that describes the relationship between phase shape width and the target image dimension such that the metric, such as process window or across chip linewidth variation (ACLV), is optimized. In a preferred embodiment, ACLV is computed by Monte Carlo simulation by providing a set of error distributions for lithographic parameters such as focus, dose, lens aberrations, and the like. Alternatively, a lookup table of optimal phase widths associated with target image dimensions may be provided. The resulting altPSM is characterized by phase shapes having widths that vary according to the widths of the target image dimensions.
摘要翻译：描述了通过最佳地选择相位宽度的宽度来设计交替相移掩模（altPSM）的方法。通过提供描绘相位形状宽度和目标图像尺寸之间的关系的光刻度量来实现最佳相位形状宽度的选择，使得诸如处理窗口或跨芯片线宽变化（ACLV）的度量被优化。在优选实施例中，通过提供一组用于光刻参数（例如焦点，剂量，透镜像差等）的误差分布，通过蒙特卡罗模拟计算ACLV。或者，可以提供与目标图像尺寸相关联的最佳相位宽度的查找表。所得到的altPSM的特征在于具有根据目标图像尺寸的宽度而变化的宽度的相位形状。

8. 发明授权

US06757886B2 Alternating phase shift mask design with optimized phase shapes 有权
标题翻译：交替相移掩模设计，具有优化的相位形状
公开(公告)号：US06757886B2
公开(公告)日：2004-06-29
申请号：US10014707
申请日：2001-11-13
申请人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Mark A. Lavin
发明人： Lars W. Liebmann , Carlos A. Fonseca , Ioana Graur , Mark A. Lavin
IPC分类号： G06F1750
CPC分类号： G03F1/30
摘要： A method is described for designing an alternating phase shifted mask (altPSM) by optimally selecting the width of phase shapes. The selection of optimal phase shape widths is achieved by providing a lithography metric that describes the relationship between phase shape width and the target image dimension such that the metric, such as process window or across chip linewidth variation (ACLV), is optimized. In a preferred embodiment, ACLV is computed by Monte Carlo simulation by providing a set of error distributions for lithographic parameters such as focus, dose, lens aberrations, and the like. Alternatively, a lookup table of optimal phase widths associated with target image dimensions may be provided. The resulting altPSM is characterized by phase shapes having widths that vary according to the widths of the target image dimensions.
摘要翻译：描述了通过最佳地选择相位宽度的宽度来设计交替相移掩模（altPSM）的方法。通过提供描绘相位形状宽度和目标图像尺寸之间的关系的光刻度量来实现最佳相位形状宽度的选择，使得诸如处理窗口或跨芯片线宽变化（ACLV）的度量被优化。在优选实施例中，通过提供一组用于光刻参数（例如焦点，剂量，透镜像差等）的误差分布，通过蒙特卡罗模拟计算ACLV。或者，可以提供与目标图像尺寸相关联的最佳相位宽度的查找表。所得到的altPSM的特征在于具有根据目标图像尺寸的宽度而变化的宽度的相位形状。

9. 发明申请

US20100075238A1 Variable Resist Protecting Groups 有权
标题翻译：可变电阻保护组
公开(公告)号：US20100075238A1
公开(公告)日：2010-03-25
申请号：US12561001
申请日：2009-09-16
申请人： Carlos A. Fonseca , Mark Somervell , Steven Scheer
发明人： Carlos A. Fonseca , Mark Somervell , Steven Scheer
IPC分类号： G03F7/20 , G03B27/54
CPC分类号： G03B27/54 , G03F7/095 , G03F7/322 , G03F7/325
摘要： A method and system for patterning a substrate using a dual-tone development process is described. The method and system comprise using a resist material having a polymer backbone with a plurality of protecting groups attached thereto to improve process latitude and critical dimension uniformity for the dual-tone development process.
摘要翻译：描述了使用双色调显影处理图案化衬底的方法和系统。该方法和系统包括使用具有聚合物主链的抗蚀剂材料，其具有连接到其上的多个保护基，以改善双音发展过程的工艺范围和临界尺寸的一致性。

10. 发明授权

US08634810B2 Pushing secure notifications to mobile computing devices 有权
标题翻译：将安全通知推送到移动计算设备
公开(公告)号：US08634810B2
公开(公告)日：2014-01-21
申请号：US13248094
申请日：2011-09-29
申请人： Eric J. Barkie , Benjamin L. Fletcher , Carlos A. Fonseca , Leslie S. Liu , Colm V. Malone , Min Wei
发明人： Eric J. Barkie , Benjamin L. Fletcher , Carlos A. Fonseca , Leslie S. Liu , Colm V. Malone , Min Wei
IPC分类号： H04M1/725
CPC分类号： H04W12/10 , H04L63/0428 , H04L67/20 , H04L67/26 , H04W12/02
摘要： A method for pushing secure notifications includes a push service platform receiving a push notification message request from an entity registered with the push service platform, processing the push notification message request to generate a secure push notification message, and sending the secure push notification message to a target mobile computing device through a native third-party push service associated with the target mobile computing device. The secure push notification message includes a message ID (identifier) that corresponds to message content associated with the push notification message request. The method further includes the push service platform receiving a pull message request from the target mobile computing device, the pull message request requesting the message content associated with the push notification message corresponding to the message ID, and sending the requested message content associated with the push notification message to the mobile computing device.
摘要翻译：用于推送安全通知的方法包括：推送服务平台，从推送服务平台注册的实体接收推送通知消息请求，处理推送通知消息请求以生成安全推送通知消息，并将安全推送通知消息发送到通过与目标移动计算设备相关联的本地第三方推送服务来定位移动计算设备。安全推送通知消息包括对应于与推送通知消息请求相关联的消息内容的消息ID（标识符）。所述方法还包括：推送服务平台从目标移动计算设备接收拉取消息请求，所述拉取消息请求请求与所述消息ID相对应的所述推送通知消息相关联的所述消息内容，以及发送与所述推送相关联的所请求的消息内容通知消息给移动计算设备。

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