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1. 发明授权

US5691112A Sulfonium salt and chemically amplified positive resist composition 失效
标题翻译：锍盐和化学放大阳性抗蚀剂组成
公开(公告)号：US5691112A
公开(公告)日：1997-11-25
申请号：US762861
申请日：1996-12-10
申请人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
发明人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
IPC分类号： C07C317/22 , C07C381/12 , G03F7/004
CPC分类号： G03F7/0045 , C07C317/22 , C07C381/12
摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.
摘要翻译：三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。它们由双（对叔丁氧基苯基）亚砜制备，也是新的。含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于使用精细图案化技术。

2. 发明授权

US5633409A Tristertbutoxyphenyl sulfonium tosylate compound 失效
标题翻译：三叔丁氧基苯基锍甲苯磺酸酯化合物
公开(公告)号：US5633409A
公开(公告)日：1997-05-27
申请号：US379986
申请日：1995-01-27
申请人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
发明人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
IPC分类号： C07C317/22 , C07C381/12 , G03F7/004 , C07C319/00
CPC分类号： G03F7/0045 , C07C317/22 , C07C381/12
摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.
摘要翻译：三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。它们由双（对叔丁氧基苯基）亚砜制备，也是新的。含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于使用精细图案化技术。

3. 发明授权

US5569784A Sulfonium salt and resist composition 失效
标题翻译：锍盐和抗蚀剂组成
公开(公告)号：US5569784A
公开(公告)日：1996-10-29
申请号：US379987
申请日：1995-01-27
申请人： Satoshi Watanabe , Junji Shimada , Youichi Ohsawa , Katsuya Takemura , Toshinobu Ishihara , Kazumasa Maruyama
发明人： Satoshi Watanabe , Junji Shimada , Youichi Ohsawa , Katsuya Takemura , Toshinobu Ishihara , Kazumasa Maruyama
IPC分类号： C07C381/12 , G03F7/004 , G03F7/039 , C07C217/48
CPC分类号： C07C381/12 , G03F7/0045 , G03F7/039
摘要： A novel sulfonium salt having at least one substituted aromatic group having acid labile groups and at least one nitrogenous aromatic group is provided. A chemically amplified, positive resist composition comprising the sulfonium salt as well as an alkali soluble resin and a dissolution inhibitor in an organic solvent has solved the PED problem.
摘要翻译：提供具有至少一个具有酸不稳定基团和至少一个含氮芳族基团的取代芳族基团的新型锍盐。在有机溶剂中包含锍盐以及碱溶性树脂和溶解抑制剂的化学增幅阳性抗蚀剂组合物解决了PED问题。

4. 发明授权

US5847218A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5847218A
公开(公告)日：1998-12-08
申请号：US811530
申请日：1997-03-04
申请人： Youichi Ohsawa , Satoshi Watanabe , Junji Shimada , Katsuya Takemura , Shigehiro Nagura , Toshinobu Ishihara
发明人： Youichi Ohsawa , Satoshi Watanabe , Junji Shimada , Katsuya Takemura , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C381/12 , G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , C07C211/44
CPC分类号： C07C381/12 , G03F7/0045
摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

5. 发明授权

US5728508A Method of forming resist pattern utilizing fluorinated resin antireflective film layer 失效
标题翻译：利用氟化树脂防反射膜层形成抗蚀剂图案的方法
公开(公告)号：US5728508A
公开(公告)日：1998-03-17
申请号：US672961
申请日：1996-07-01
申请人： Katsuya Takemura , Toshinobu Ishihara , Satoshi Watanabe , Kazumasa Maruyama , Hirofumi Kishita , Kouichi Yamaguchi
发明人： Katsuya Takemura , Toshinobu Ishihara , Satoshi Watanabe , Kazumasa Maruyama , Hirofumi Kishita , Kouichi Yamaguchi
IPC分类号： G03F7/09 , G03C1/835
CPC分类号： G03F7/091
摘要： A method of forming a resist pattern comprising forming a photoresist layer on a substrate, forming a transparent anti-reflective film on said photoresist layer by applying an anti-reflective material onto said photoresist layer, said anti-reflective material comprising a fluorinated resin which is soluble in an organic hydrocarbon solvent, exposing a light to said resist layer through said transparent anti-reflective film, removing said anti-reflective film using an organic hydrocarbon solvent, and developing said photoresist layer.
摘要翻译：一种形成抗蚀剂图案的方法，包括在基材上形成光致抗蚀剂层，在所述光致抗蚀剂层上形成透明的抗反射膜，通过在所述光致抗蚀剂层上施加抗反射材料，所述抗反射材料包括氟化树脂，可溶于有机烃溶剂中，通过所述透明抗反射膜将光暴露于所述抗蚀剂层，使用有机烃溶剂除去所述抗反射膜，并显影所述光致抗蚀剂层。

6. 发明授权

US5759739A Resist composition with polymeric dissolution inhibitor and alkali soluble resin 失效
标题翻译：抗溶剂组合物与聚合溶解抑制剂和碱溶性树脂
公开(公告)号：US5759739A
公开(公告)日：1998-06-02
申请号：US635856
申请日：1996-04-22
申请人： Katsuya Takemura , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Minoru Shigemitsu , Ken'ichi Itoh
发明人： Katsuya Takemura , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Minoru Shigemitsu , Ken'ichi Itoh
IPC分类号： G03F7/00 , G03F7/004 , G03F7/039 , G03C1/73
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A resist composition comprising an alkali-soluble resin, typically a partially t-butoxycarbonylated polyhydroxystyrene, a p-butoxystyrene/t-butylacrylate copolymer or p-butoxystyrene/maleic anhydride copolymer as a dissolution inhibitor, and a iodonium or sulfonium salt as a photoacid generator is effective for forming a resist film which can be precisely and finely patterned using high energy radiation such as a KrF excimer laser.
摘要翻译：抗蚀剂组合物，其包含碱溶性树脂，通常为部分叔丁氧基羰基化的聚羟基苯乙烯，作为溶解抑制剂的对丁氧基苯乙烯/叔丁基丙烯酸酯共聚物或对丁氧基苯乙烯/马来酸酐共聚物，以及作为光酸产生剂的碘鎓盐或锍盐对于形成可以使用高能辐射如KrF准分子激光器精确和精细地图案化的抗蚀剂膜是有效的。

7. 发明授权

US6033828A Partially hydrogenated polymers and chemically amplified positive resist compositions 失效
标题翻译：部分氢化聚合物和化学增幅阳性抗蚀剂组合物
公开(公告)号：US6033828A
公开(公告)日：2000-03-07
申请号：US12583
申请日：1998-01-26
申请人： Junji Shimada , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Junji Shimada , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C08F8/04 , G03F7/004 , G03F7/039 , G03C1/492 , C08F12/08 , C08F12/24
CPC分类号： G03F7/039 , C08F8/04 , G03F7/0045
摘要： A polymer comprising recurring units of formula (1) is provided wherein some of the hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups are replaced by acid labile groups. The polymer is crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining phenolic hydroxyl groups and/or alcoholic hydroxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group and alcoholic hydroxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, letter x is 0 or a positive integer, y is a positive integer, x+y.ltoreq.5, letters p and q are positive numbers satisfying p+q=1 and 0
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基的一些氢原子被酸不稳定基团取代。聚合物在分子内和/或分子之间交联，具有由一些残留的酚羟基和/或醇羟基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团。酸不稳定基团和交联基团的用量平均为全部酚羟基和醇羟基的0摩尔％至80摩尔％以上。聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，字母x是0或正整数，y是正整数，x + y <5，字母p和q是满足p + q = 1的正数， 0

8. 发明授权

US5705702A Method for preparing triarylsulfonium salts 失效
标题翻译：三芳基锍盐的制备方法
公开(公告)号：US5705702A
公开(公告)日：1998-01-06
申请号：US713257
申请日：1996-09-12
申请人： Yoichi Osawa , Satoshi Watanabe , Junji Shimada , Toshinobu Ishihara
发明人： Yoichi Osawa , Satoshi Watanabe , Junji Shimada , Toshinobu Ishihara
IPC分类号： C07C381/12 , C07C331/00
CPC分类号： C07C381/12
摘要： By reacting an aryl Grignard reagent of the following general formula (1) with thionyl chloride and then reacting the reaction product with a triorganosilyl sulfonate or triorganohalide of the general formula (2): (R.sup.6).sub.3 SiY wherein R.sup.6, which may be the same or different, is a monovalent hydrocarbon group and Y is a substituted or unsubstituted alkylsulfonate or arylsulfonate or halogen atom, there is prepared a triarylsulfonium salt of the following general formula (3). ##STR1## In the formulae, each of R.sup.1 to R.sup.5, which may be the same or different, is a hydrogen atom or a monovalent organic group, especially alkyl, aryl, alkoxy, aryloxy, dialkylamino, dialkylaminoalkyl, alkylthio or arylthio group and X is a bromine or chlorine atom.
摘要翻译：通过使下列通式（1）的芳基格氏试剂与亚硫酰氯反应，然后使反应产物与通式（2）：（R6）3 SiY的三有机甲硅烷基磺酸酯或三有机卤化物反应，其中R6可以相同或不同的是一价烃基，Y是取代或未取代的烷基磺酸酯或芳基磺酸酯或卤素原子，制备下列通式（3）的三芳基锍盐。（1）式（3）式中，R 1〜R 5可以相同或不同，为氢原子或一价有机基团，特别是烷基，芳基，烷氧基，芳氧基，二烷基氨基，二烷基氨基烷基，烷硫基或芳硫基，X是溴或氯原子。

9. 发明授权

US6156481A Positive resist composition 有权
标题翻译：正抗蚀剂组成
公开(公告)号：US6156481A
公开(公告)日：2000-12-05
申请号：US428911
申请日：1999-10-28
申请人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
发明人： Takanobu Takeda , Osamu Watanabe , Jun Watanabe , Jun Hatakeyama , Youichi Ohsawa , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A hydroxystyrene-(meth)acrylate copolymer in which some phenolic hydroxyl groups are crosslinked with acid labile groups is blended as a base resin in a positive resist composition, which has the advantages of enhanced dissolution inhibition and an increased dissolution contrast after exposure.
摘要翻译：将一些酚羟基与酸不稳定基团交联的羟基苯乙烯 - （甲基）丙烯酸酯共聚物作为基础树脂掺入正性抗蚀剂组合物中，其具有增强的溶解抑制和暴露后溶解度增加的优点。

10. 发明授权

US08129100B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129100B2
公开(公告)日：2012-03-06
申请号：US12418090
申请日：2009-04-03
申请人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
IPC分类号： G03F7/11 , G03F7/20 , G03F7/40 , G03F7/039
CPC分类号： G03F7/0035 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
摘要翻译：通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB，并用碱性显影剂显影以形成负的抗蚀剂图案。最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

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