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1. 发明授权

US08129100B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129100B2
公开(公告)日：2012-03-06
申请号：US12418090
申请日：2009-04-03
申请人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Kazumi Noda , Mutsuo Nakashima , Masaki Ohashi , Toshinobu Ishihara
IPC分类号： G03F7/11 , G03F7/20 , G03F7/40 , G03F7/039
CPC分类号： G03F7/0035 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer.
摘要翻译：通过涂覆化学放大的正性抗蚀剂组合物形成双重图案，所述正性抗蚀剂组合物包含含酸不稳定基团的树脂和光致酸发生剂和预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能量辐射，PEB和显影用碱性显影剂形成正的抗蚀剂图案，将正性抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆负性抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能辐射PEB，并用碱性显影剂显影以形成负的抗蚀剂图案。最后的显影步骤包括将已被转化为可溶于显影剂的正性抗蚀图案溶解的反转移步骤。

2. 发明申请

US20100062380A1 DOUBLE PATTERNING PROCESS 有权
标题翻译：双重图案处理
公开(公告)号：US20100062380A1
公开(公告)日：2010-03-11
申请号：US12549792
申请日：2009-08-28
申请人： Katsuya Takemura , Tsunehiro Nishi , Jun Hatakeyama , Masaki Ohashi , Takeshi Kinsho
发明人： Katsuya Takemura , Tsunehiro Nishi , Jun Hatakeyama , Masaki Ohashi , Takeshi Kinsho
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/322
摘要： A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.
摘要翻译：通过将第一正性抗蚀剂组合物涂布在基材上，图案地暴露于辐射并用碱性显影剂显影以形成第一抗蚀剂图案形成双重图案; 施加热和/或辐射以使第一抗蚀剂图案不溶于第二溶剂和第二显影剂; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物，图案地暴露于辐射，并用第二显影剂显影以形成第二抗蚀剂图案。第一抗蚀剂组合物中的树脂包含式（1）的重复单元，其中R 1是H，CH 3或CF 3，m = 1或2，n = 0或1。

3. 发明授权

US08247166B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08247166B2
公开(公告)日：2012-08-21
申请号：US12549792
申请日：2009-08-28
申请人： Katsuya Takemura , Tsunehiro Nishi , Jun Hatakeyama , Masaki Ohashi , Takeshi Kinsho
发明人： Katsuya Takemura , Tsunehiro Nishi , Jun Hatakeyama , Masaki Ohashi , Takeshi Kinsho
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/322
摘要： A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.
摘要翻译：通过将第一正性抗蚀剂组合物涂布在基材上，图案地暴露于辐射并用碱性显影剂显影以形成第一抗蚀剂图案形成双重图案; 施加热和/或辐射以使第一抗蚀剂图案不溶于第二溶剂和第二显影剂; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物，图案地暴露于辐射，并用第二显影剂显影以形成第二抗蚀剂图案。第一抗蚀剂组合物中的树脂包含式（1）的重复单元，其中R 1是H，CH 3或CF 3，m = 1或2，n = 0或1。

4. 发明授权

US08722307B2 Near-infrared absorptive layer-forming composition and multilayer film comprising near-infrared absorptive layer 有权
标题翻译：近红外吸收层形成组合物和包含近红外吸收层的多层膜
公开(公告)号：US08722307B2
公开(公告)日：2014-05-13
申请号：US13118013
申请日：2011-05-27
申请人： Seiichiro Tachibana , Kazumi Noda , Masaki Ohashi , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Seiichiro Tachibana , Kazumi Noda , Masaki Ohashi , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/004 , G03F7/11
CPC分类号： G03F7/038 , G03F7/0046 , G03F7/091
摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.
摘要翻译：包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。

5. 发明申请

US20130157463A1 NEAR-INFRARED ABSORBING FILM COMPOSITION FOR LITHOGRAPHIC APPLICATION 审中-公开
标题翻译：近红外吸收膜组合物用于光刻应用
公开(公告)号：US20130157463A1
公开(公告)日：2013-06-20
申请号：US13325797
申请日：2011-12-14
申请人： Dario L. Goldfarb , Martin Glodde , Wu-Song Huang , Takeshi Kinsho , Wai-Kin Li , Kazumi Noda , Masaki Ohashi , Seiichiro Tachibana
发明人： Dario L. Goldfarb , Martin Glodde , Wu-Song Huang , Takeshi Kinsho , Wai-Kin Li , Kazumi Noda , Masaki Ohashi , Seiichiro Tachibana
IPC分类号： H01L21/302 , G03F7/207 , G02B5/22
CPC分类号： G03F7/094 , G02B5/208 , G02B5/223 , G03F7/091 , G03F7/105 , G03F9/7026
摘要： The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near-infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography.
摘要翻译：本发明涉及用于集成半导体晶片的图案化的垂直取向和校正的近红外（NIR）膜组合物和使用该组合物的图案形成方法。近红外吸收膜组合物包括具有聚甲炔阳离子和可交联阴离子的NIR吸收染料，可交联聚合物和交联剂。图案形成方法包括通过感测从包含光致抗蚀剂层的基板反射的近红外发射和由光致抗蚀剂层下的NIR吸收膜组合物形成的NIR吸收层来对准和聚焦光致抗蚀剂层的焦平面位置。近红外吸收膜组合物和图案形成方法对于在具有复杂掩埋形貌的半导体衬底上形成材料图案特别有用。

6. 发明授权

US08323536B2 Near-infrared absorbing dye, near-infrared absorptive film-forming composition, and near-infrared absorptive film 有权
标题翻译：近红外吸收染料，近红外吸收膜形成组合物和近红外吸收膜
公开(公告)号：US08323536B2
公开(公告)日：2012-12-04
申请号：US13108534
申请日：2011-05-16
申请人： Masaki Ohashi , Takeshi Kinsho , Kazumi Noda , Seiichiro Tachibana
发明人： Masaki Ohashi , Takeshi Kinsho , Kazumi Noda , Seiichiro Tachibana
IPC分类号： F21V9/04 , F21V9/06 , G02B5/22 , G02B5/26 , G03C1/00 , G03F7/00
CPC分类号： C07D403/06 , C07D209/08 , C07D209/90 , C07D403/08 , C09B23/0008 , C09B23/0016 , C09B23/0025 , C09B23/0033 , C09B23/0041 , C09B23/086 , G02B5/223
摘要： A near-infrared absorbing dye has an anion of formula (1) wherein A1 is H or CF3, R0 is OH or —OC(═O)—R′, and R′ is a monovalent hydrocarbon group. The dye has excellent solvent solubility as well as good optical properties and heat resistance, offering the advantages of easy coating and effective working during film formation. The dye free of heavy metal in its structure is advantageously used in the process of fabricating semiconductor devices.
摘要翻译：近红外吸收染料具有式（1）的阴离子，其中A1是H或CF3，R0是OH或-OC（= O）-R'，R'是一价烃基。该染料具有优异的溶剂溶解性以及良好的光学性能和耐热性，提供了容易涂布和成膜期间有效加工的优点。在其结构中不含重金属的染料有利地用于制造半导体器件的工艺中。

7. 发明申请

US20110262863A1 NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM 审中-公开
标题翻译：近红外吸收层形成组合物和多层膜
公开(公告)号：US20110262863A1
公开(公告)日：2011-10-27
申请号：US13091290
申请日：2011-04-21
申请人： Seiichiro TACHIBANA , Masaki Ohashi , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Seiichiro TACHIBANA , Masaki Ohashi , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/004 , F21V9/04
CPC分类号： G03F7/091
摘要： A near-infrared absorptive layer is formed from a composition comprising (A) an acenaphthylene polymer, (B) a near-infrared absorbing dye, and (C) a solvent. When a multilayer film comprising the near-infrared absorptive layer and a photoresist layer is used in optical lithography, the detection accuracy of optical auto-focusing is improved, allowing the optical lithography to produce a definite projection image with an improved contrast and succeeding in forming a better photoresist pattern.
摘要翻译：由（A）苊烯聚合物，（B）近红外吸收染料和（C）溶剂组成的组合物形成近红外吸收层。当在光学光刻中使用包含近红外吸收层和光致抗蚀剂层的多层膜时，光学自动聚焦的检测精度得到改善，允许光学光刻产生具有改善的对比度并成功地形成的确定的投影图像更好的光刻胶图案。

8. 发明授权

US09069245B2 Near-infrared absorptive layer-forming composition and multilayer film 有权
标题翻译：近红外吸收层形成组合物和多层膜
公开(公告)号：US09069245B2
公开(公告)日：2015-06-30
申请号：US13091287
申请日：2011-04-21
申请人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
发明人： Masaki Ohashi , Seiichiro Tachibana , Kazumi Noda , Shozo Shirai , Takeshi Kinsho , Wu-Song Huang , Dario L. Goldfarb , Wai-Kin Li , Martin Glodde
IPC分类号： G03F7/09 , G03F7/11 , G03F7/004 , G02B5/20 , G02B5/22
CPC分类号： G03F7/0045 , G02B5/208 , G02B5/22 , G03F7/091 , G03F7/11
摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.
摘要翻译：包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。

9. 发明授权

US08507175B2 Patterning process and resist composition 有权
标题翻译：图案化过程和抗蚀剂组成
公开(公告)号：US08507175B2
公开(公告)日：2013-08-13
申请号：US12905426
申请日：2010-10-15
申请人： Jun Hatakeyama , Masaki Ohashi , Youichi Ohsawa , Kazuhiro Katayama
发明人： Jun Hatakeyama , Masaki Ohashi , Youichi Ohsawa , Kazuhiro Katayama
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/095
摘要： The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.
摘要翻译：该方法通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，烘烤，曝光，曝光后烘烤和显影来形成图案。抗蚀剂组合物包含聚合物，其包含具有酸不稳定基团并且基本上不溶于碱性显影剂的重复单元，PAG，能够产生氨基的PBG，用于中和PAG酸失活的猝灭剂和有机溶剂。来自猝灭剂和PBG的氨基的总量大于来自PAG的酸的量。未曝光区域和过度曝光区域不溶解在显影剂中，而只有中间曝光剂量区域溶解在显影剂中。通过单次曝光和开发将单线分成两组，分辨率翻了一番。

10. 发明授权

US08105748B2 Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process 有权
标题翻译：可聚合阴离子的锍盐和聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08105748B2
公开(公告)日：2012-01-31
申请号：US12580953
申请日：2009-10-16
申请人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Jun Hatakeyama , Seiichiro Tachibana
发明人： Masaki Ohashi , Youichi Ohsawa , Takeshi Kinsho , Jun Hatakeyama , Seiichiro Tachibana
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C07D307/77 , C07C309/12 , C07C381/12 , C08F2220/303 , C08F2220/382 , G03F7/0045 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R1 is H, F, methyl or trifluoromethyl, R2, R3 and R4 are C1-C10 alkyl, alkenyl or oxoalkyl or C6-C18 aryl, aralkyl or aryloxoalkyl, or two of R2, R3 and R4 may bond together to form a ring with S, A is a C2-C20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.
摘要翻译：提供了具有式（1）的可聚合阴离子的锍盐，其中R 1是H，F，甲基或三氟甲基，R 2，R 3和R 4是C 1 -C 10烷基，烯基或氧代烷基或C 6 -C 18芳基，芳烷基或芳氧基烷基，或 R 2，R 3和R 4中的两个可以键合在一起形成具有S的环，A是具有环状结构的C 2 -C 20烃基，n是0或1.锍盐在暴露于高温下时产生非常强的磺酸，能量辐射。还提供了包含衍生自锍盐的聚合物的抗蚀剂组合物。

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