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1. 发明授权

US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/00 , H01L21/02 , H01L33/20 , H01L33/44 , H01L33/08 , H01L33/40 , H01L33/42
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

2. 发明申请

US20130234178A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20130234178A1
公开(公告)日：2013-09-12
申请号：US13601015
申请日：2012-08-31
申请人： Satoshi Mitsugi , Naoharu Sugiyama , Taisuke Sato , Shinya Nunoue
发明人： Satoshi Mitsugi , Naoharu Sugiyama , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/12 , H01L33/20
摘要： According to one embodiment, a semiconductor light emitting device includes a silicon substrate, a buffer layer, a foundation semiconductor layer, a first semiconductor layer, a light emitting unit and a second semiconductor layer. The buffer layer is provided on a part of a major surface of the silicon substrate. The foundation semiconductor layer is crystal-grown from an upper surface of the buffer layer, covers a non-formed region of the major surface where the buffer layer is not provided, and is spaced apart from the non-formed region. The first semiconductor layer is provided on the foundation semiconductor layer and has a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and has a second conductivity type.
摘要翻译：根据一个实施例，半导体发光器件包括硅衬底，缓冲层，基底半导体层，第一半导体层，发光单元和第二半导体层。缓冲层设置在硅衬底的主表面的一部分上。基底半导体层从缓冲层的上表面晶体生长，覆盖没有设置缓冲层的主表面的非形成区域，并与非形成区域间隔开。第一半导体层设置在基底半导体层上并且具有第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并具有第二导电类型。

3. 发明申请

US20120292649A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER 有权
标题翻译：半导体发光器件，波形和制造氮化物半导体晶体层的方法
公开(公告)号：US20120292649A1
公开(公告)日：2012-11-22
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
IPC分类号： H01L33/22 , H01L29/00 , H01L21/20
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。第一半导体层具有与第一主表面相对的第一主表面和第二主表面。发光层具有设置在第二主表面上的有源层。第二半导体层设置在发光层上。低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

4. 发明申请

US20130328055A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20130328055A1
公开(公告)日：2013-12-12
申请号：US13724007
申请日：2012-12-21
申请人： Jumpei TAJIMA , Kotaro Zaima , Shigeya Kimura , Hiroshi Ono , Shinji Yamada , Satoshi Mitsugi , Naoharu Sugiyama , Shinya Nunoue
发明人： Jumpei TAJIMA , Kotaro Zaima , Shigeya Kimura , Hiroshi Ono , Shinji Yamada , Satoshi Mitsugi , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/40
CPC分类号： H01L33/40 , H01L33/14 , H01L33/22 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一和第二电极，第一，第二和第三半导体层以及发光层。第一导电类型的第一半导体层设置在第一电极上。发光层设置在第一半导体层上。第二导电类型的第二半导体层设置在发光层上。具有低杂质浓度的第三半导体层设置在第二半导体层的一部分上。第二电极包括焊盘部分和窄线部分。焊盘部设置在第三半导体层上。窄线部分从焊盘部分延伸出并且包括沿垂直于堆叠方向的平面延伸的延伸部分。窄线部分与第二半导体层接触。

5. 发明申请

US20130234182A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
公开(公告)号：US20130234182A1
公开(公告)日：2013-09-12
申请号：US13601520
申请日：2012-08-31
申请人： Hiroshi KATSUNO , Satoshi Mitsugi , Shinya Nunoue
发明人： Hiroshi KATSUNO , Satoshi Mitsugi , Shinya Nunoue
IPC分类号： H01L33/20 , H01L33/58
CPC分类号： H01L33/405 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/58
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.

6. 发明授权

US09324917B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09324917B2
公开(公告)日：2016-04-26
申请号：US13601520
申请日：2012-08-31
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/40 , H01L33/20 , H01L33/58 , H01L33/38 , H01L33/44
CPC分类号： H01L33/405 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/58
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，焊盘，窄线电极和第一绝缘层。发光层设置在第一半导体层和第二半导体层之间并且与第一半导体层接触。窄线电极包括第一部分和第二部分。第一部分设置在不与发光层接触的第一半导体层的表面上，并与第一半导体层欧姆接触。第二部分设置在表面上并且位于第一部分和接合焊盘之间。窄线电极电连接到接合焊盘。第一绝缘层设置在第二部分和第一半导体层之间。

7. 发明授权

US09082931B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09082931B2
公开(公告)日：2015-07-14
申请号：US13222302
申请日：2011-08-31
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/36 , H01L33/38 , H01L33/44 , H01L33/00 , H01L33/22 , H01L33/40 , H01L33/64
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一电极，第二电极和电介质体部分。叠层结构体包括具有与第一部分并置的第一部分和第二部分的第一半导体层，设置在第二部分上的发光层，设置在发光层上的第二半导体层。第一电极包括设置在第一部分上并接触第一层的接触部分。第二电极包括设置在第二半导体层上并与第二层接触的第一部分，以及与第一部分电连接的第二部分，并且当从第一层朝向第二层时，包括与接触部分重叠的部分。电介质体部分设置在接触部分和第二部分之间。

8. 发明授权

US08859307B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08859307B2
公开(公告)日：2014-10-14
申请号：US13601120
申请日：2012-08-31
申请人： Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue , Hiroshi Katsuno
发明人： Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue , Hiroshi Katsuno
IPC分类号： H01L21/00 , B23K26/00 , B23K26/20 , B23K26/18 , H01L23/34 , H01L23/00
CPC分类号： H01L23/34 , B23K26/0006 , B23K26/009 , B23K26/18 , B23K26/20 , B23K2103/56 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/0079 , H01L2224/29099 , H01L2224/291 , H01L2224/29139 , H01L2224/29144 , H01L2224/29149 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29171 , H01L2224/29172 , H01L2224/29184 , H01L2224/32502 , H01L2224/32506 , H01L2224/75262 , H01L2224/75985 , H01L2224/83 , H01L2224/83193 , H01L2224/83224 , H01L2224/83399 , H01L2224/834 , H01L2224/83449 , H01L2224/83455 , H01L2224/83457 , H01L2224/8346 , H01L2224/83466 , H01L2224/83471 , H01L2224/83472 , H01L2224/83484 , H01L2224/83805 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01032 , H01L2924/00
摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.
摘要翻译：根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

9. 发明授权

US08847271B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08847271B2
公开(公告)日：2014-09-30
申请号：US13729563
申请日：2012-12-28
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/38 , H01L29/20 , H01L33/62 , H01L33/22 , H01L33/44 , H01L33/20
CPC分类号： H01L33/42 , H01L29/2003 , H01L33/0025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。第一层具有第一和第二表面。第二层设置在第一层的第二表面的一侧。发光层设置在第一和第二层之间。电介质层接触第二表面，折射率低于第一层的折射率。第一电极包括第一和第二部分。第一部分接触第二表面并邻近介电层设置。第二部分与第一半导体层与电介质层的相对侧接触。第二电极与第二层与发光层的相对侧接触。

10. 发明申请

US20140054594A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140054594A1
公开(公告)日：2014-02-27
申请号：US13729563
申请日：2012-12-28
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/62 , H01L29/20
CPC分类号： H01L33/42 , H01L29/2003 , H01L33/0025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。第一层具有第一和第二表面。第二层设置在第一层的第二表面的一侧。发光层设置在第一和第二层之间。电介质层接触第二表面，折射率低于第一层的折射率。第一电极包括第一和第二部分。第一部分接触第二表面并邻近介电层设置。第二部分与第一半导体层与电介质层的相对侧接触。第二电极与第二层与发光层的相对侧接触。

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