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1. 发明授权

US08847271B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08847271B2
公开(公告)日：2014-09-30
申请号：US13729563
申请日：2012-12-28
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/38 , H01L29/20 , H01L33/62 , H01L33/22 , H01L33/44 , H01L33/20
CPC分类号： H01L33/42 , H01L29/2003 , H01L33/0025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。第一层具有第一和第二表面。第二层设置在第一层的第二表面的一侧。发光层设置在第一和第二层之间。电介质层接触第二表面，折射率低于第一层的折射率。第一电极包括第一和第二部分。第一部分接触第二表面并邻近介电层设置。第二部分与第一半导体层与电介质层的相对侧接触。第二电极与第二层与发光层的相对侧接触。

2. 发明申请

US20140054594A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140054594A1
公开(公告)日：2014-02-27
申请号：US13729563
申请日：2012-12-28
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshihide Ito , Shinya Nunoue
IPC分类号： H01L33/62 , H01L29/20
CPC分类号： H01L33/42 , H01L29/2003 , H01L33/0025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，电介质层，第一电极，第二电极和支撑衬底。第一层具有第一和第二表面。第二层设置在第一层的第二表面的一侧。发光层设置在第一和第二层之间。电介质层接触第二表面，折射率低于第一层的折射率。第一电极包括第一和第二部分。第一部分接触第二表面并邻近介电层设置。第二部分与第一半导体层与电介质层的相对侧接触。第二电极与第二层与发光层的相对侧接触。

3. 发明授权

US09324917B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09324917B2
公开(公告)日：2016-04-26
申请号：US13601520
申请日：2012-08-31
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/40 , H01L33/20 , H01L33/58 , H01L33/38 , H01L33/44
CPC分类号： H01L33/405 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/58
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，焊盘，窄线电极和第一绝缘层。发光层设置在第一半导体层和第二半导体层之间并且与第一半导体层接触。窄线电极包括第一部分和第二部分。第一部分设置在不与发光层接触的第一半导体层的表面上，并与第一半导体层欧姆接触。第二部分设置在表面上并且位于第一部分和接合焊盘之间。窄线电极电连接到接合焊盘。第一绝缘层设置在第二部分和第一半导体层之间。

4. 发明授权

US09082931B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09082931B2
公开(公告)日：2015-07-14
申请号：US13222302
申请日：2011-08-31
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/36 , H01L33/38 , H01L33/44 , H01L33/00 , H01L33/22 , H01L33/40 , H01L33/64
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一电极，第二电极和电介质体部分。叠层结构体包括具有与第一部分并置的第一部分和第二部分的第一半导体层，设置在第二部分上的发光层，设置在发光层上的第二半导体层。第一电极包括设置在第一部分上并接触第一层的接触部分。第二电极包括设置在第二半导体层上并与第二层接触的第一部分，以及与第一部分电连接的第二部分，并且当从第一层朝向第二层时，包括与接触部分重叠的部分。电介质体部分设置在接触部分和第二部分之间。

5. 发明授权

US08859307B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08859307B2
公开(公告)日：2014-10-14
申请号：US13601120
申请日：2012-08-31
申请人： Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue , Hiroshi Katsuno
发明人： Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue , Hiroshi Katsuno
IPC分类号： H01L21/00 , B23K26/00 , B23K26/20 , B23K26/18 , H01L23/34 , H01L23/00
CPC分类号： H01L23/34 , B23K26/0006 , B23K26/009 , B23K26/18 , B23K26/20 , B23K2103/56 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/0079 , H01L2224/29099 , H01L2224/291 , H01L2224/29139 , H01L2224/29144 , H01L2224/29149 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29171 , H01L2224/29172 , H01L2224/29184 , H01L2224/32502 , H01L2224/32506 , H01L2224/75262 , H01L2224/75985 , H01L2224/83 , H01L2224/83193 , H01L2224/83224 , H01L2224/83399 , H01L2224/834 , H01L2224/83449 , H01L2224/83455 , H01L2224/83457 , H01L2224/8346 , H01L2224/83466 , H01L2224/83471 , H01L2224/83472 , H01L2224/83484 , H01L2224/83805 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01032 , H01L2924/00
摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.
摘要翻译：根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

6. 发明授权

US09105810B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09105810B2
公开(公告)日：2015-08-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/32 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。第一半导体层是第一导电类型。发光单元设置在第一半导体层上。第二半导体层设置在发光单元上并且是第二导电类型。反射电极设置在第二半导体层上并且包括Ag。氧化物层设置在反射电极上。氧化物层是绝缘的并且具有第一开口。含氧层设置在氧化物层上。含氮层是绝缘的，并且具有与第一开口连通的第二开口。

7. 发明申请

US20130087806A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
公开(公告)号：US20130087806A1
公开(公告)日：2013-04-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide ITO , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide ITO , Hiroshi Katsuno , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/60
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

8. 发明申请

US20130075374A1 MEMBER SEPARATION APPARATUS AND MEMBER SEPARATION METHOD 审中-公开
标题翻译：会员分离装置和会员分离方法
公开(公告)号：US20130075374A1
公开(公告)日：2013-03-28
申请号：US13404698
申请日：2012-02-24
申请人： Satoshi MITSUGI , Hiroshi Katsuno
发明人： Satoshi MITSUGI , Hiroshi Katsuno
IPC分类号： B23K26/00
CPC分类号： H01L33/0079 , B23K26/0613 , B23K26/361
摘要： According to one embodiment, a member separation apparatus includes a stage and a light source. The stage is configured to mount a workpiece. The workpiece includes a first member and a second member. The first member is transmissive to light in a wavelength region. The wavelength region includes a first wavelength. The second member contacts with the first member. The second member has a higher absorptance for light in the wavelength region than the first member. The light source generates laser light and irradiates the workpiece with the laser light. The laser light contains a component of the first wavelength and a component of a second wavelength. The second wavelength includes the wavelength region different from the first wavelength.
摘要翻译：根据一个实施例，构件分离装置包括平台和光源。工作台配置为安装工件。工件包括第一构件和第二构件。第一构件对波长区域中的光透射。波长区域包括第一波长。第二个成员与第一个成员接触。第二部件对波长区域的光的吸收率比第一部件高。光源产生激光并用激光照射工件。激光包含第一波长的分量和第二波长的分量。第二波长包括与第一波长不同的波长区域。

9. 发明授权

US09130127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09130127B2
公开(公告)日：2015-09-08
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/38 , H01L33/22
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

10. 发明申请

US20120235168A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120235168A1
公开(公告)日：2012-09-20
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/40
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

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