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1. 发明授权

US08859307B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08859307B2
公开(公告)日：2014-10-14
申请号：US13601120
申请日：2012-08-31
申请人： Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue , Hiroshi Katsuno
发明人： Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue , Hiroshi Katsuno
IPC分类号： H01L21/00 , B23K26/00 , B23K26/20 , B23K26/18 , H01L23/34 , H01L23/00
CPC分类号： H01L23/34 , B23K26/0006 , B23K26/009 , B23K26/18 , B23K26/20 , B23K2103/56 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/0079 , H01L2224/29099 , H01L2224/291 , H01L2224/29139 , H01L2224/29144 , H01L2224/29149 , H01L2224/29155 , H01L2224/29157 , H01L2224/2916 , H01L2224/29166 , H01L2224/29171 , H01L2224/29172 , H01L2224/29184 , H01L2224/32502 , H01L2224/32506 , H01L2224/75262 , H01L2224/75985 , H01L2224/83 , H01L2224/83193 , H01L2224/83224 , H01L2224/83399 , H01L2224/834 , H01L2224/83449 , H01L2224/83455 , H01L2224/83457 , H01L2224/8346 , H01L2224/83466 , H01L2224/83471 , H01L2224/83472 , H01L2224/83484 , H01L2224/83805 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00014 , H01L2924/01006 , H01L2924/01014 , H01L2924/01032 , H01L2924/00
摘要： According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light.
摘要翻译：根据实施例，半导体器件的制造方法包括放置步骤和接合步骤。放置步骤经由设置在半导体有源部分和支撑衬底部分之间的接合部分朝向支撑衬底部分面向半导体有源部分。接合部包括接合层和光吸收层，激光用光吸收层的吸收率高于或等于激光接合层的吸收率。接合步骤通过用激光照射光吸收层并通过支撑基板部分粘合半导体活性部分和支撑基板部分，并且通过由激光加热的光吸收层进行热传导来熔化接合层。

2. 发明授权

US09082931B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09082931B2
公开(公告)日：2015-07-14
申请号：US13222302
申请日：2011-08-31
申请人： Hiroshi Katsuno , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
发明人： Hiroshi Katsuno , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/36 , H01L33/38 , H01L33/44 , H01L33/00 , H01L33/22 , H01L33/40 , H01L33/64
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一电极，第二电极和电介质体部分。叠层结构体包括具有与第一部分并置的第一部分和第二部分的第一半导体层，设置在第二部分上的发光层，设置在发光层上的第二半导体层。第一电极包括设置在第一部分上并接触第一层的接触部分。第二电极包括设置在第二半导体层上并与第二层接触的第一部分，以及与第一部分电连接的第二部分，并且当从第一层朝向第二层时，包括与接触部分重叠的部分。电介质体部分设置在接触部分和第二部分之间。

3. 发明申请

US20120292631A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120292631A1
公开(公告)日：2012-11-22
申请号：US13222302
申请日：2011-08-31
申请人： Hiroshi KATSUNO , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
发明人： Hiroshi KATSUNO , Satoshi Mitsugi , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一电极，第二电极和电介质体部分。叠层结构体包括具有与第一部分并置的第一部分和第二部分的第一半导体层，设置在第二部分上的发光层，设置在发光层上的第二半导体层。第一电极包括设置在第一部分上并接触第一层的接触部分。第二电极包括设置在第二半导体层上并与第二层接触的第一部分，以及与第一部分电连接的第二部分，并且当从第一层朝向第二层时，包括与接触部分重叠的部分。电介质体部分设置在接触部分和第二部分之间。

4. 发明授权

US08643044B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08643044B2
公开(公告)日：2014-02-04
申请号：US13222912
申请日：2011-08-31
申请人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Koichi Tachibana , Shigeya Kimura , Toshiki Hikosaka , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.
摘要翻译：根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。第一半导体层具有第一和第二部分。发光层设置在第二部分上。第二半导体层设置在发光层上。第一电极设置在第一部分上。第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。焊盘层连接到第二电极。焊盘层的透射率低于第二电极的透射率。第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

5. 发明授权

US08314437B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08314437B2
公开(公告)日：2012-11-20
申请号：US12874425
申请日：2010-09-02
申请人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro Zaima , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L21/18 , H01L33/04 , H01L33/22 , H01L33/24
摘要： Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.
摘要翻译：某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中形成n电极。

6. 发明授权

US08148890B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08148890B2
公开(公告)日：2012-04-03
申请号：US12195536
申请日：2008-08-21
申请人： Saori Abe , Toshiyuki Oka , Shinya Nunoue
发明人： Saori Abe , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L27/15 , H01L33/00 , H01L33/02 , H01L33/04
CPC分类号： G02B6/107 , B82Y20/00 , G02B3/0037 , G02B6/132 , G02B6/4207 , H01L33/20 , H01L33/42 , H01L33/44 , H01L2933/0083
摘要： A light-emitting device includes a support substrate which includes a light-emitting layer and a light extraction surface, and a light transmission layer, formed on the light extraction surface of the support substrate, having a periodic refractive index distribution structure in an in-plane direction and a thickness direction, the light transmission layer including a plurality of projections formed of a having a refractive index lower than that of the support substrate.
摘要翻译：发光装置包括：支撑基板，其包括发光层和光提取表面;以及透光层，形成在支撑基板的光提取表面上，具有周期性的折射率分布结构，平面方向和厚度方向，所述光透射层包括由折射率低于所述支撑基板的折射率形成的多个突起。

7. 发明申请

US20120056154A1 METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件和半导体发光器件的方法
公开(公告)号：US20120056154A1
公开(公告)日：2012-03-08
申请号：US13037687
申请日：2011-03-01
申请人： Kotaro ZAIMA , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
发明人： Kotaro ZAIMA , Toru Gotoda , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/06
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/22
摘要： A method of fabricating semiconductor light emitting device forms a laminated film by laminating an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer in order on a uneven main surface of a first substrate, forms a plurality of first electrodes, on an upper surface of the p-type nitride semiconductor layer, forms a first metal layer to cover surfaces of the plurality of first electrodes and the p-type nitride semiconductor layer, forms a second metal layer on an upper surface of the second substrate, joins the first and second metal layers by facing the first and second substrates, cuts the first substrate or forming a groove on the first substrate along a border of the light emitting element from a surface side opposite to the first metal layer on the first substrate, and irradiates a laser toward areas of the light emitting devices from a surface side opposite to the first metal layer on the first substrate to peel off the first substrate.
摘要翻译：通过在第一衬底的不平坦的主表面上依次层叠n型氮化物半导体层，有源层和p型氮化物半导体层，制造半导体发光器件的方法形成层压膜，形成多个第一电极在p型氮化物半导体层的上表面上形成第一金属层以覆盖多个第一电极和p型氮化物半导体层的表面，在第二金属层的上表面上形成第二金属层基板，通过面对第一和第二基板连接第一和第二金属层，切割第一基板或沿着发光元件的边界在第一基板上从第一金属层的与第一金属层的第一金属层相反的表面侧形成凹槽并且从与第一基板上的第一金属层相反的表面侧将激光照射到发光器件的区域，以剥离第一基板。

8. 发明申请

US20110220935A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20110220935A1
公开(公告)日：2011-09-15
申请号：US12874625
申请日：2010-09-02
申请人： Toru GOTODA , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
发明人： Toru GOTODA , Toshiyuki Oka , Shinya Nunoue , Kotaro Zaima
IPC分类号： H01L33/32 , H01L21/268
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
摘要翻译：半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。发光元件在基板上具有基于氮化物的III-V族化合物半导体。发光元件具有光提取面。光提取面上的第一电极层。第二电极层设置在与发光元件的光提取面相反的表面上。种子电极层构造成覆盖第二电极层的整个表面。电镀层设置在种子电极层上。发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。发光元件具有按照第二导电类型半导体层，发光层和第一导电类型半导体层的顺序逐渐变窄的宽度的正锥形形状。

9. 发明申请

US20110215370A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110215370A1
公开(公告)日：2011-09-08
申请号：US12873753
申请日：2010-09-01
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
IPC分类号： H01L33/26
CPC分类号： H01L33/20 , H01L33/46
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.
摘要翻译：根据一个实施例，提供了具有高光提取效率的半导体发光器件。半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

10. 发明申请

US20110215351A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110215351A1
公开(公告)日：2011-09-08
申请号：US12875822
申请日：2010-09-03
申请人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
发明人： Shigeya Kimura , Hajime Nago , Toshiyuki Oka , Koichi Tachibana , Toshiki Hikosaka , Shinya Nunoue
IPC分类号： H01L33/32 , H01L33/30
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3216 , H01S5/34333
摘要： According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness tb of the barrier layer is 10 nanometers or less.
摘要翻译：根据一个实施例，半导体发光器件包括包括氮化物半导体的n型半导体层，包括氮化物半导体的p型半导体层，发光部分和层叠体。发光部分设置在n型和p型半导体层之间，并且包括阻挡层和阱层。阱层与阻挡层堆叠。所述层叠体设置在所述发光部和所述n型半导体层之间，并且包括第一层和第二层。第二层与第一层堆叠。平均层叠体的组成比高于发光部的平均In组成比的0.4倍。阻挡层的层厚度tb为10纳米以下。

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