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    • 3. 发明授权
    • Method of forming electrolytic contact pads including layers of copper, nickel, and gold
    • 形成包括铜,镍和金层的电解接触焊盘的方法
    • US06777314B2
    • 2004-08-17
    • US10211914
    • 2002-08-05
    • Kishor DesaiJohn P. McCormickManiam Alagaratnam
    • Kishor DesaiJohn P. McCormickManiam Alagaratnam
    • H01L21326
    • H05K3/062H01L21/2885H01L21/4853H01L24/11H01L2224/05001H01L2224/05023H01L2224/0508H01L2224/05568H01L2224/13099H01L2924/01029H01L2924/01033H01L2924/01078H01L2924/01079H01L2924/014H01L2924/14H05K3/108H05K3/243H01L2224/05644H01L2924/00014H01L2224/05147H01L2224/05155
    • A method of forming an electrical contact on a surface of a substrate. A first layer of a first electrically conductive material is formed on the surface of the substrate, where the first layer is formed in a substantially contiguous sheet across the surface of the substrate. A non electrically conductive masking layer is applied to the first layer, where the masking layer leaves exposed first portions of the first layer and covers second portions of the first layer. The substrate is immersed in a first electrolytic plating bath, and a first electrical potential is applied between the first layer and the first electrolytic plating bath, thereby causing the formation of a second layer of a second electrically conductive material on the exposed first portions of the first layer. The substrate is immersed in a second electrolytic plating bath, and a second electrical potential is applied between the first layer and the second electrolytic plating bath, thereby causing the formation of a third layer of a third electrically conductive material on the second layer. The masking layer is removed from the substrate to expose the second portions of the first layer, and the exposed second portions of the first layer are removed to form discrete contact pads from the first portions of the first layer and the overlying second layer and third layer.
    • 在基板的表面上形成电接触的方法。 在衬底的表面上形成第一导电材料第一层,其中第一层在基片的表面上形成在基本连续的片材中。 将非导电掩蔽层施加到第一层,其中掩蔽层离开第一层的暴露的第一部分并覆盖第一层的第二部分。 将衬底浸入第一电解电镀浴中,并且在第一层和第一电解镀浴之间施加第一电位,由此在第二层导电材料的暴露的第一部分上形成第二导电材料层 第一层 将衬底浸入第二电解镀浴中,并且在第一层和第二电解镀浴之间施加第二电位,从而在第二层上形成第三层第三导电材料层。 从衬底去除掩模层以暴露第一层的第二部分,并且去除第一层的暴露的第二部分以从第一层的第一部分和上覆的第二层和第三层形成分立的接触焊盘 。
    • 10. 发明授权
    • Interposer for semiconductor package assembly
    • 用于半导体封装组装的插入器
    • US06335491B1
    • 2002-01-01
    • US09499801
    • 2000-02-08
    • Maniam AlagaratnamKishor V. DesaiSunil A. Patel
    • Maniam AlagaratnamKishor V. DesaiSunil A. Patel
    • H05K116
    • H05K3/3436H01L23/49827H01L23/49833H01L2224/16225H01L2924/00014H01L2924/01078H01L2924/01322H01L2924/15311H01L2924/15312H05K3/284H05K2201/049H05K2201/10378H05K2201/10977H05K2203/041Y02P70/613Y10T29/49117Y10T29/4913Y10T29/49144Y10T29/53174H01L2224/0401
    • The present invention describes an interposer which improves the thermal performance of a semiconductor device. The interposer may be situated between a substrate and a board. The interposer is attached to two layers of solder balls. The first layer of solder balls electrically and mechanically connects the interposer to the substrate. The second layer of solder balls electrically and mechanically connects the interposer to the board. In one aspect, the coefficient of thermal expansion (CTE) of the interposer may be flexibly selected to reduce thermal strain-induced stress for either or both layers of solder balls resulting from thermal performance differences between the substrate and the interposer or the interposer and the board. In another aspect, the CTE of the interposer may be reduced to allow a lower CTE for the substrate, which in turn may reduce thermal strain-induced stress for solder balls between the substrate and a die attached to the substrate. Advantageously, the improved thermal performance of the present invention may allow larger substrates, larger dies, larger solder ball arrays, reduced solder ball pitches and pin counts well above conventional levels without compromising semiconductor device reliability.
    • 本发明描述了一种提高半导体器件的热性能的插入器。 插入器可以位于基板和板之间。 插入件连接到两层焊球。 第一层焊球将电介质和机械连接到衬底。 第二层焊球电连接和机械连接插入器到板。 在一个方面,可以灵活地选择中介层的热膨胀系数(CTE),以减小由于衬底与插入件或插入件之间的热性能差异导致的两个或两个焊球层的热应变诱发应力, 板。 在另一方面,可以减小中介层的CTE以允许衬底的较低CTE,这反过来可以降低衬底和附接到衬底的管芯之间的焊球的热应变诱发应力。 有利地,本发明的改进的热性能可以允许更大的基板,更大的管芯,较大的焊球阵列,减少的焊球间距和引脚数远远高于传统的等级,而不会影响半导体器件的可靠性。