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1. 发明授权

US06284438B1 Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same 失效
标题翻译：用于制造限定小开口的光致抗蚀剂图案的方法和使用其制造半导体器件的方法
公开(公告)号：US06284438B1
公开(公告)日：2001-09-04
申请号：US09420555
申请日：1999-10-19
申请人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
发明人： Sang-jun Choi , Yool Kang , Si-hyeung Lee , Joo-tae Moon
IPC分类号： G03F726
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/039
摘要： A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.
摘要翻译：提供了限定具有小尺寸的开口的光致抗蚀剂图案的制造方法以及使用其的半导体装置的制造方法。可以使用光致抗蚀剂组合物形成限定开口的光致抗蚀剂图案，该光致抗蚀剂组合物包括含有聚合物A的聚合物混合物I，其中酸不稳定的二烷基丙二酸酯基团悬挂于聚合物主链，聚合物B，在低于聚合物B本身的玻璃化转变温度的温度下热分解为聚合物主链，或含有聚合物B的聚合物混合物II和包含（甲基）丙烯酸酯作为单体的聚合物C作为主要成分。然后可以通过光致抗蚀剂图案的热流动来减小开口的尺寸。可以形成限定具有小尺寸的开口的光致抗蚀剂图案，因为光致抗蚀剂组合物包含聚合物混合物，其具有诸如高对比度的有利特征，并且其中组合物在热流动时的流速可以容易地被控制。

2. 发明授权

US06803176B2 Methods for forming line patterns in semiconductor substrates 失效
标题翻译：在半导体衬底中形成线图案的方法
公开(公告)号：US06803176B2
公开(公告)日：2004-10-12
申请号：US10227067
申请日：2002-08-23
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F740
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要翻译：一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

3. 发明申请

US20050026078A1 Resist compositions including thermal crosslinking agents 审中-公开
标题翻译：抗蚀剂组合物包括热交联剂
公开(公告)号：US20050026078A1
公开(公告)日：2005-02-03
申请号：US10924484
申请日：2004-08-24
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F7/004 , C08K5/00 , C08K5/06 , C08K5/14 , C08K5/16 , C08K5/23 , C08L61/04 , G03F7/022 , G03F7/039 , G03F7/40 , H01L21/027 , G03C1/76
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
摘要翻译：一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

4. 发明授权

US06485895B1 Methods for forming line patterns in semiconductor substrates 失效
标题翻译：在半导体衬底中形成线图案的方法
公开(公告)号：US06485895B1
公开(公告)日：2002-11-26
申请号：US09533770
申请日：2000-03-23
申请人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
发明人： Sang-jun Choi , Yool Kang , Joo-tae Moon , Jeong-hee Chung , Sang-gyun Woo
IPC分类号： G03F740
CPC分类号： G03F7/40
摘要： A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs by the free radicals produced from the free radical initiator resulting in a modified photoresist pattern having at least one opening having a second width which exposes the target layer, wherein the second width is smaller than the first width.
摘要翻译：一种用于在半导体衬底中形成精细图案的方法，包括以下步骤：（a）用包含至少一种能够通过光刻工艺形成光致抗蚀剂图案的化合物的抗蚀剂组合物在半导体衬底上涂覆待蚀刻的靶层，和自由基引发剂，其中所述自由基引发剂是能够在等于或高于所述至少一种化合物的玻璃化转变温度的温度下通过热处理分解的引发剂，其中所述涂布步骤导致形成抗蚀剂化合物层，其包含抗蚀剂组合物; （b）对抗蚀剂化合物层进行光刻处理以形成具有第一宽度的至少一个开口的光致抗蚀剂图案，其中目标层通过第一宽度暴露; 和（c）将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中抗蚀剂组合物中的部分交联反应通过自由基由自由基引发剂产生的自由基导致具有至少一个具有暴露目标层的第二宽度的开口的改性光致抗蚀剂图案，其中第二宽度小于第一宽度。

5. 发明授权

US06280903B1 Chemically amplified resist composition 有权
标题翻译：化学放大抗蚀剂组合物
公开(公告)号：US06280903B1
公开(公告)日：2001-08-28
申请号：US09618142
申请日：2000-07-17
申请人： Yool Kang , Sang-Jun Choi , Dong-Won Jung , Chun-Geun Park , Young-Bum Koh
发明人： Yool Kang , Sang-Jun Choi , Dong-Won Jung , Chun-Geun Park , Young-Bum Koh
IPC分类号： G03C1492
CPC分类号： G03F7/039 , G03F7/0045
摘要： Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula: wherein R3 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof. R4 is selected from the group consisting of hydrogen and a C1 to C10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R5 is selected from the group consisting of hydrogen and methyl; R6 is selected from the group consisting of t-butyl and tetrahydropyranyl; M and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三元共聚物用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中所述脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基。 R 4选自氢和C 1至C 10脂族烃，其中所述脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基; R5选自氢和甲基; R6选自叔丁基和四氢吡喃基; M和n分别是整数; 并且其中n /（m + n）为约0.1至约0.5。

6. 发明授权

US6114084A Chemically amplified resist composition 有权
标题翻译：化学放大抗蚀剂组合物
公开(公告)号：US6114084A
公开(公告)日：2000-09-05
申请号：US165061
申请日：1998-10-02
申请人： Yool Kang , Sang-Jun Choi , Dong-Won Jung , Chun-Geun Park , Young-Bum Koh
发明人： Yool Kang , Sang-Jun Choi , Dong-Won Jung , Chun-Geun Park , Young-Bum Koh
IPC分类号： G03F7/004 , G03F7/039 , G03C1/492
CPC分类号： G03F7/039 , G03F7/0045
摘要： Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof, R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; M and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5. Also, a resist composition for use in a chemically amplified resist, which comprises a photoacid generator and a polymer having the formula: ##STR2## wherein x is selected from the group consisting of C.sub.5 to C.sub.8 cyclic or alicyclic composition, R.sub.7 is selected from the group consisting of hydrogen and methyl; R.sub.4 is selected from the group consisting of t-butyl, tetrahydropyranyl and adamantyl; m and n are each integers; and the ratio n/(m+n) ranges from about 0.1 to about 0.5.
摘要翻译：共聚物和三元共聚物用于化学增强抗蚀剂。三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中所述脂族烃含有选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R 4选自氢和C 1至C 10脂族烃，其中所述脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基，R 5选自的氢和甲基; R6选自叔丁基和四氢吡喃基; M和n分别是整数; 并且其中n /（m + n）为约0.1至约0.5。另外，用于化学放大抗蚀剂的抗蚀剂组合物，其包含光致酸发生剂和具有下式的聚合物：其中x选自C5至C8环状或脂环族组合物，R7选自由以下组成的组：氢和甲基; R4选自叔丁基，四氢吡喃基和金刚烷基; m和n分别为整数; n /（m + n）的比例为约0.1至约0.5。

7. 发明授权

US06300036B1 Photosensitive polymers and chemically amplified photoresist compositions using the same 失效
标题翻译：光敏聚合物和使用其的化学放大光致抗蚀剂组合物
公开(公告)号：US06300036B1
公开(公告)日：2001-10-09
申请号：US09203669
申请日：1998-12-01
申请人： Sang-Jun Choi , Yool Kang , Dong-Won Jung , Chun-Geun Park
发明人： Sang-Jun Choi , Yool Kang , Dong-Won Jung , Chun-Geun Park
IPC分类号： B03F7004
CPC分类号： C08F220/18 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/111 , Y10S430/115
摘要： The compounds are of a class of photosensitive polymers for use in chemically amplified photoresists. These photoresists produce sharp line patterns when exposed with an ArF excimer laser. The polymer composition includes a copolymer and the photoresist composition includes a terpolymer with a photo acid generator. The resulting chemically amplified photoresist compositions have strong resistance to dry etching, possess excellent adhesion to film material, and are capable of being developed using conventional developers.
摘要翻译：这些化合物是用于化学放大光致抗蚀剂的一类光敏聚合物。当用ArF准分子激光器曝光时，这些光致抗蚀剂产生尖锐的线条图案。聚合物组合物包括共聚物，光致抗蚀剂组合物包括具有光酸产生剂的三元共聚物。所得到的化学放大光致抗蚀剂组合物对干蚀刻具有很强的抗性，对薄膜材料具有优异的粘附性，并且能够使用常规显影剂进行显影。

8. 发明授权

US06753125B2 Photosensitive polymer having fused aromatic ring and photoresist composition containing the same 失效
标题翻译：具有稠合芳族环的光敏聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06753125B2
公开(公告)日：2004-06-22
申请号：US09888912
申请日：2001-06-25
申请人： Sang-jun Choi , Yool Kang
发明人： Sang-jun Choi , Yool Kang
IPC分类号： G03F7038
CPC分类号： G03F7/0392 , G03F7/0395 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A photosensitive polymer having a protecting group including a fused aromatic ring, and a photoresist composition including the photosensitive polymer are provided. The photosensitive polymer has an acid-labile protecting group at its polymer backbone, the acid-labile protecting group including a fused aromatic ring having formula: where R1 is hydrogen atom or alkyl group having from 1 to 4 carbon atoms; X is hydrogen atom, halogen, alkyl, or alkoxy; and y is an integer from 1 to 3, wherein the fused aromatic ring is a liner ring or branched ring with y greater than or equal to 2. A photoresist composition is also provided which includes the photosensitive polymer and a photoacid generator (PAG).
摘要翻译：提供了具有包含稠合芳环的保护基的光敏聚合物和包含该光敏聚合物的光致抗蚀剂组合物。光敏聚合物在其聚合物主链上具有酸不稳定的保护基，酸不稳定保护基包括具有下式的稠合芳环：其中R 1是氢原子或具有1至4个碳原子的烷基; X是氢原子，卤素，烷基或烷氧基; y为1〜3的整数，其中稠合芳香环为y大于或等于2的衬垫环或分支环。还提供了包含光敏聚合物和光致酸产生剂（PAG）的光致抗蚀剂组合物。

9. 发明授权

US08431331B2 Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion 有权
标题翻译：通过使用酸扩散的双重图案化工艺形成半导体器件精细图案的方法
公开(公告)号：US08431331B2
公开(公告)日：2013-04-30
申请号：US12267687
申请日：2008-11-10
申请人： Yool Kang , Suk-joo Lee , Jung-hyeon Lee , Shi-yong Yi
发明人： Yool Kang , Suk-joo Lee , Jung-hyeon Lee , Shi-yong Yi
IPC分类号： G03F7/40
CPC分类号： H01L21/027 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0338 , H01L21/32139
摘要： A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.
摘要翻译：提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。在该方法中，在基板上形成多个第一掩模图案以彼此分离。在多个第一掩模图案的每一个的侧壁和上表面上形成包括酸源的封盖膜。在封盖膜上形成第二掩模层。通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留在第一间隙中的第二掩模层的残留部分形成。

10. 发明授权

US07560768B2 Nonvolatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07560768B2
公开(公告)日：2009-07-14
申请号：US11594808
申请日：2006-11-09
申请人： Cha-Won Koh , Byung-Hong Chung , Sang-Gyun Woo , Jeong-Lim Nam , Seok-Hwan Oh , Jai-Hyuk Song , Hyun Park , Yool Kang
发明人： Cha-Won Koh , Byung-Hong Chung , Sang-Gyun Woo , Jeong-Lim Nam , Seok-Hwan Oh , Jai-Hyuk Song , Hyun Park , Yool Kang
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/115 , H01L27/11521
摘要： Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.
摘要翻译：提供一种非易失性存储器件及其制造方法。非易失性存储器件的浮置栅极可以沿着沿着控制栅电极延伸的方向截取十字形截面。浮置栅极可以具有沿着垂直于控制栅电极的有源区延伸的方向的T形截面。浮栅电极可以包括顺序地设置在栅绝缘层上的下栅极图案，中栅极图案和上栅极图案，其中中间栅极图案的宽度大于下栅极图案和上栅极图案。中间栅极图案和上部栅极图案之间的边界可以具有圆角。

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